The Deposition Rate of Ti Film by Plasma

2011 ◽  
Vol 328-330 ◽  
pp. 1220-1223
Author(s):  
Shuang Hua Huang ◽  
Qi Lai
Keyword(s):  
Deposition Rate ◽  
Negative Bias ◽  
Titanium Film ◽  
Preparation Time ◽  
Deposition Rates ◽  
Deposition Power ◽  
Bias Range ◽  
Film Change ◽  
Ti Films

Ti film on AISI 201 was prepared by plasma. The film was characterized by SEM. Their deposition rates were measured by measure the mess of Ti film(m) and the preparation time(t). SEM show that the more time is, the thicker Ti films is. The stronger power is, the thicker Ti films is. And the far the distance is, the more thin Ti films is. It was found that the deposition rates range from 0.02 mg.min-1 to 0.025 mg.min-1 at the area of 6.25cm2. The deposition rate of titanium film change with the deposition power range from 0.021 mg.min-1 to 0.163 mg.min-1. The deposition rate of titanium film change with the deposition power range from 0.096 mg.min-1 to 0.130 mg.min-1. The deposition rate of titanium film change with the deposition negative bias range from 0.008 mg.min-1 to 0.02mg.min-1 at the area of 6.25cm2.

The Effect of Preparation Conditions to Crystall of Ti Film

2011 ◽  
Vol 328-330 ◽  
pp. 1339-1342 ◽  
Author(s):  
Qi Lai ◽  
Shuang Hua Huang
Keyword(s):  
Negative Bias ◽  
Preparation Conditions ◽  
Diffraction Peaks ◽  
Ti Films

Ti film on AISI 201 was prepared by plasma. The film was characterized and analyzed by using XRD. it was found that of Ti film has a different microstructure in different condition. With negative bias increased from 15V to 260V, the diffraction peaks of Ti films changed from planes (111) to planes (200). With power increased from 8W to 145W, the diffraction peaks of Ti films decrease at planes (002), the diffraction peaks of Ti films decrease at planes (102) and (103). The result suggests that negative bias and power contributed to form an different phase throughout the films. The vacuum, distance and time have no effect to crystal of Ti film.

Impact of Deposition Rate on the Structural and Magnetic Properties of Sputtered Ni/Cu Multilayer Thin Films

2017 ◽  
Vol 73 (1) ◽  
pp. 85-90 ◽  
Author(s):  
Ali Karpuz ◽  
Salih Colmekci ◽  
Hakan Kockar ◽  
Hilal Kuru ◽  
Mehmet Uckun
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Deposition Rate ◽  
High Rate ◽  
Cubic Phase ◽  
High Deposition Rate ◽  
Multilayer Thin Films ◽  
Face Centered Cubic ◽  
Deposition Rates ◽  
Cu Films

AbstractThe structural and corresponding magnetic properties of Ni/Cu films sputtered at low and high deposition rates were investigated as there is a limited number of related studies in this field. 5[Ni(10 nm)/Cu(30 nm)] multilayer thin films were deposited using two DC sputtering sources at low (0.02 nm/s) and high (0.10 nm/s) deposition rates of Ni layers. A face centered cubic phase was detected for both films. The surface of the film sputtered at the low deposition rate has a lot of micro-grains distributed uniformly and with sizes from 0.1 to 0.4 μm. Also, it has a vertical acicular morphology. At high deposition rate, the number of micro-grains considerably decreased, and some of their sizes increased up to 1 μm. The surface of the Ni/Cu multilayer deposited at the low rate has a relatively more grainy and rugged structure, whereas the surface of the film deposited at the high rate has a relatively larger lateral size of surface grains with a relatively fine morphology. Saturation magnetisation, Ms, values were 90 and 138 emu/cm3 for deposition rates of 0.02 and 0.10 nm/s, respectively. Remanence, Mr, values were also found to be 48 and 71 emu/cm3 for the low and high deposition rates, respectively. The coercivity, Hc, values were 46 and 65 Oe for the low and high Ni deposition rates, respectively. The changes in the film surfaces provoked the changes in the Hc values. The Ms, Mr, and Hc values of the 5[Ni(10 nm)/Cu(30 nm)] films can be adjusted considering the surface morphologies and film contents caused by the different Ni deposition rates.

Structure, morphology and mechanical properties of AlCrN coatings obtained by the method of cathodic arc evaporation

2018 ◽  
Vol 23 (2) ◽  
pp. 61-69
Author(s):  
Adam Gilewicz ◽  
Roman Jędrzejewski ◽  
Piotr Myśliński ◽  
Bogdan Warcholiński
Keyword(s):  
Deposition Rate ◽  
Bias Voltage ◽  
Roughness Parameter ◽  
Nitrogen Pressure ◽  
Negative Bias ◽  
Negative Bias Voltage ◽  
Substrate Bias Voltage ◽  
Cathodic Arc Evaporation ◽  
Arc Evaporation ◽  
Cathodic Arc

CrAlN coatings have been formed on steel substrates (HS6-5-2) using cathodic arc evaporation. The influence of nitrogen pres-sure and substrate bias voltage on the properties of CrAlN coatings formed from Al80Cr20 cathode, such as: chemical and phase composition of the coatings, their surface morphology, deposition rate, hardness and adhesion to the substrate have been investigated. It has been determined that the rate of the deposition of coatings in the nitrogen atmosphere with the pressure of 3 Pa is the highest and that with the increase of the negative bias voltage of the substrate the deposition rate decreases. The roughness parameter Ra of the coating surface decreases as the nitrogen pressure increases during their formation. Presumably, this is related to the reduction of the amount of macroparticles on the surface of the coating. The hardness of the coatings (taking into account the measurement uncertainty) is independent of the nitrogen pressure, but it increases with the increase of the negative bias voltage of the substrate. The adhesion of the coating increases with the increase of the nitrogen pressure to 3–4 Pa, and then it decreases. The increase in the negative bias voltage of the substrate during the formation of the coating deteriorates its adhesion to the substrate.

Relation between Growth Precursors and Film Properties for Plasma Deposition of a-Si:H at Rates up to 100 Å/s

2000 ◽  
Vol 609 ◽  
Author(s):  
W.M.M. Kessels ◽  
A.H.M. Smets ◽  
J.P.M. Hoefnagels ◽  
M.G.H. Boogaarts ◽  
D.C. Schram ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Deposition Rate ◽  
Surface Reaction ◽  
Film Growth ◽  
Plasma Deposition ◽  
Reaction Probability ◽  
Film Properties ◽  
Deposition Rates ◽  
Minor Contribution ◽  
A Minor

ABSTRACTFrom investigations on the SiH3 and SiH radical density and the surface reaction probability in a remote Ar-H2-SiH4 plasma, it is unambiguously demonstrated that the a-Si:H film quality improves significantly with increasing contribution of SiH3 and decreasing contribution of very reactive (poly)silane radicals. Device quality a-Si:H is obtained at deposition rates up to 100 Å/s for conditions where film growth is governed by SiH3 (contribution ∼90%) and where SiH has only a minor contribution (∼2%). Furthermore, for SiH3 dominated film growth the effect of the deposition rate on the a-Si:H film properties with respect to the substrate temperature is discussed.

Protein Deposition Rate of Hybrid Boars and its Measurement

1993 ◽  
Vol 1993 ◽  
pp. 10-10
Author(s):  
T.A. Van Lunen ◽  
D.J.A. Cole
Keyword(s):  
Deposition Rate ◽  
Nitrogen Balance ◽  
Carcass Composition ◽  
High Protein ◽  
Full Potential ◽  
Nutrient Requirements ◽  
Deposition Rates ◽  
Protein Deposition ◽  
Nutritional Strategies

The development of genotypes with high protein deposition rates (PDR) has brought into question previously accepted theories concerning growth, protein deposition and nutrient requirements of pigs. It is clear that the full potential for lean deposition of these new genotypes can only be realized if we adopt appropriate nutritional strategies. As a first step the work reported here was conducted to determine the protein deposition rate of highly selected hybrid boars and to evaluate nitrogen balance and carcass composition techniques for estimating PDR.

Effect of Ce on Palladium Deposition by Electroless Plating

2014 ◽  
Vol 912-914 ◽  
pp. 107-110
Author(s):  
Hai Zhao ◽  
Jun Qing Liu
Keyword(s):  
Rare Earth ◽  
Deposition Rate ◽  
Rare Earth Element ◽  
Electroless Plating ◽  
Earth Element ◽  
Composite Membranes ◽  
Permeation Flux ◽  
Sulfur Resistance ◽  
Deposition Rates ◽  
Plating Solution

Palladium composite membranes have been prepared using an electroless plating technique with rare earth element of Ce was added into the plating solution. The effects of the rare earth element on the Pd deposition rate, plating temperature and H2 permeation flux were studied. The experimental results show that the additions of mixed rare earth element of Ce into the plating solution can increase Pd deposition rates by 15%. The resistance to sulfidation was examined and the membrane sulfur resistance was confirmed by exposure to a combined gas of H2 and H2S. Keywords: hydrogen utilized; electroless plating; inorganic membrance; Cerium

scholarly journals Exploration of the deposition limits of microcrystalline silicon

2005 ◽  
Vol 77 (2) ◽  
pp. 379-389 ◽  
Author(s):  
D. Mataras
Keyword(s):  
Deposition Rate ◽  
Process Parameters ◽  
Microcrystalline Silicon ◽  
Optimum Pressure ◽  
Deposition Rates ◽  
Electron Population ◽  
Hydrogenated Silicon ◽  
Radical Generation ◽  
Deposition Substrate ◽  
Crystalline Growth

The effect of various process parameters on the deposition rate of microcrystalline hydrogenated silicon is presented. The various pathways leading to high deposition rates involve the optimization of a combination of parameters, while maintaining the crystalline character of the film and avoiding the presence of particles. The deposition rate increases in conditions that enhance and at the same time “cool down” the electron population. Such conditions are: moderately higher frequencies, higher pressures, and the presence of larger molecules (like disilane) even in small quantities. There is an optimum pressure, determined by primary dissociation, for a certain silane fraction. In addition, silane fraction and power density must also increase up to the limit of transition to amorphous growth and before attachment becomes too important. In all of these cases, there is a need for optimizing the distance of the deposition substrate to the source of radical generation, especially at higher pressures, to further increase the already important contribution of higher silicon radicals. It is shown that similar deposition rates can be obtained via radical fluxes with very different compositions. In every case, there is a need for sufficient H atom fluxes to ensure crystalline growth.

Blower-door estimates of PM2.5 deposition rates and penetration factors in an idealized room

2020 ◽  
pp. 1420326X2094442 ◽  
Author(s):  
Yonghang Lai ◽  
Ian Ridley ◽  
Peter Brimblecombe
Keyword(s):  
Deposition Rate ◽  
Coefficient Of Variation ◽  
Particle Deposition ◽  
Experimental Methods ◽  
Test Cell ◽  
Deposition Rates ◽  
Penetration Factor ◽  
Surface Materials ◽  
Novel Method ◽  
Indoor And Outdoor

Particle deposition and penetration in buildings has been widely studied, but the effect of indoor characteristics merits further investigation, so improved experimental methods may be needed. The present study measured indoor and outdoor concentrations of PM2.5 and estimated PM2.5 deposition rates and penetration factors under a variety of different indoor situations, with a novel method (blower-door method). The blower-door method is compared with the standard decay and rebound method for an idealized room (a portable building test cell; 6.08 m [Formula: see text] 2.40 m [Formula: see text] 2.60 m) under eight testing scenarios (empty, cardboard boxes in three arrangements, terry cloth wall covering, and three sets of window holes); run three times to establish the coefficient of variation representing precision. Results show that higher induced indoor–outdoor pressure differences cause a larger variation of estimated effective deposition rate on different indoor surfaces. The deposition rate and penetration factor may be influenced by indoor surface materials. The blower-door method gives higher precision for the estimates, and detects subtle differences in penetration factors, which may be difficult using the decay and rebound method.

Rapid Growth of Ceramic Films by Particle-Vapor Codeposition

1991 ◽  
Vol 250 ◽  
Author(s):  
Robert H. Hurt ◽  
Mark D. Allendorf
Keyword(s):  
Mathematical Model ◽  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Rapid Growth ◽  
Chemical Vapor ◽  
Deposition Rates ◽  
Ceramic Films

AbstractParticle-enhanced chemical vapor deposition (PECVD) is capable of producing ceramic films at high deposition rates. A mathematical model of the particle-vapor codeposition process has been developed and has been applied to PECVD processes to predict deposition rate enhancements and deposit properties.

Electronic transport study of high deposition rate HWCVD a-Si:H by the microwavephotomixing technique

2001 ◽  
Vol 664 ◽  
Author(s):  
S.R. Sheng ◽  
R. Braunstein ◽  
B.P. Nelson ◽  
Y. Xu
Keyword(s):  
Substrate Temperature ◽  
Deposition Rate ◽  
Flow Rate ◽  
Electronic Transport ◽  
High Deposition Rate ◽  
Deposition Pressure ◽  
Film Properties ◽  
High Quality ◽  
Deposition Rates ◽  
Potential Fluctuations

ABSTRACTThe electronic transport properties of high deposition rate a-Si:H films prepared by HWCVD have been investigated in detail by employing the microwave photomixing technique. The high deposition rates (up to 1 µm/min.) were achieved by adding a second filament, increasing deposition pressure, silane flow rate, and decreasing filament-to-substrate distance. The effect of the deposition rate on the resultant film properties with respect to the substrate temperature, deposition pressure and silane flow rate was studied. It was found that the film transport properties do not change monotonically with increasing deposition rate. The photoconductivity peaks at ∼70-90 Å/s, where both the drift mobility and lifetime peak, consistent with the deposition rate dependence of the range and depth of the potential fluctuations. High quality, such as a photoconductivity-to-dark-conductivity ratio of ∼105 and nearly constant low charged defect density, can be maintained at deposition rates up to ∼150 Å/s, beyond which the film properties deteriorate rapidly as a result of an enhanced effect of the long-range potential fluctuations due to a considerable increase in the concentration of the charged defects. Our present results indicate that medium silane flow rate, low pressure, and higher substrate temperature are generally required to maintain high quality films at high deposition rates.

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