The Effect on Physical, Electrical and Structural Parameters of RF Sputtered Molybdenum Thin Film

2011 ◽  
Vol 403-408 ◽  
pp. 5092-5096 ◽  
Author(s):  
Mukter Zaman ◽  
Gunawan Witjaksono ◽  
Teh Aun Shih ◽  
Shabiul Islam ◽  
Masuri Othman ◽  
...  
Keyword(s):  
Thin Film ◽  
Deposition Rate ◽  
Rate Increase ◽  
Structural Parameters ◽  
Rf Sputtering ◽  
Xrd Analysis ◽  
Device Fabrication ◽  
Structural Parameter ◽  
Rf Power ◽  
Deposition Parameters

In this study, the physical, electrical, and structural parameter on radio frequency (RF) sputtered molybdenum thin film is investigated as a function of two deposition parameters: rf power, and argon (Ar) pressure. Films are sputtered onto the substrates nominally held in room temperature in a RF sputtering system at partial argon (Ar) pressure. A number of 10 films are deposited at 8 sccm of Ar pressure while varying the rf power from 90 to 360 watt. Besides, another set of 7 films are deposited at 240 watt RF power while varying the Ar pressure from 8 to 32 watts. All the films are characterized using FESEM, AFM, XRD, and four points probe. The analysis results substantiate that, to fabricate a low resistive thin layer of molybdenum (Mo) both sputtering power, and deposition time Ar pressure plays significant rules. It is found that, with the increase of the RF power (90 to 280 watt) the deposition rate increase from 1.2 A0/sec to 4.4 A0/sec. But at a RF power higher than 280 watt the deposition rate saturated and it does not increase as linear as before. Also resistivity continuously decreases as the RF power increases from 90 watt up to 270 watt, after that the resistivity remain almost same regardless the RF power increased. Besides, by varying the Ar pressure it is found that with the increase of the Ar pressure the deposition rate increase until 20 sccm (up to 2.4 A0/sec). With further increase of the Ar pressure deposition rate start reducing and reached 2.1 A0/sec at 32 sccm. Based on the above investigation and analysis optimized film is deposited and further analyzed. The surface roughness is analyzed using AFM characterization tool and found 27.4519 nm. The FESEM and XRD analysis along with the resistivity of the film is used to measure the strain of the deposited film and found a strain of less than 0.01% on the optimized film, which is essential for MEMS/NEMS device fabrication and energy harvesting applications.

Sputter-Deposited Cr as an Alternative to Electroplated Cr

2006 ◽  
Vol 510-511 ◽  
pp. 674-677 ◽  
Author(s):  
Chong Mu Lee ◽  
Kyung Ha Kim ◽  
Jong Min Lim
Keyword(s):  
Substrate Temperature ◽  
Adhesion Strength ◽  
Deposition Rate ◽  
Xrd Analysis ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Chromium Film ◽  
Chromium Electroplating ◽  
Sputter Deposited ◽  
Cr Film

Since the hexavalent chromium used in chromium electroplating was found to cause cancer in human body, alternative deposition techniques have been widely investigated. Sputter deposition of chromium (Cr) as a deposition technique for replacing electroplating was studied. Effects of RF-power, substrate temperature on the deposition rate, corrosion-resistance, hardness and adhesion strength were investigated. X-ray diffraction (XRD) analysis was performed to determine the structure and the compositions of the films. The hardnesses of the films were measured by using a nanoindenter. The microstructures of the films were observed using scanning electron microscopy. The deposition rate and hardness of the sputter-deposited Cr film tend to increase with the increasing RF-power and substrate temperature of the sputtering process. Both the hardness and adhesion strength of the sputter-deposited chromium film was found to be higher than those of the electroplated chromium film.

Fabrication of Amorphous Carbon Thin Film from CH4 Using PEVCD

2019 ◽  
Vol 966 ◽  
pp. 95-99
Author(s):  
Budhi Priyanto ◽  
Muh Saleh ◽  
Sarayut Tunmee ◽  
Chanan Euaruksakul ◽  
Yoyok Cahyono ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Amorphous Carbon ◽  
Carbon Film ◽  
Chemical Vapor ◽  
Gas Flows ◽  
Rf Power ◽  
Methane Gas ◽  
Deposition Parameters ◽  
Frequency Plasma

Thin films of amorphous carbon have successfully been fabricated by radio frequency-plasma enhanced chemical vapor deposition (RF-PECVD). Carbon film fabrication with a methane gas (CH4) source has been fabricated with deposition parameters: 15 Watt of RF power, 13.5 MHz of frequency, 100 °C of substrate temperature, 450 m Torr of pressure and 120 minutes of deposition time. Methane gas flows were 40, 60, 80 sccm, respectively. Thin film can be in the form of DLC, Graphite or Amorphous Carbon depending on the ratio of hybridized orbitals of sp3, sp2 and sp. The X-ray diffractrometry (XRD) show the amorphous phase of the thin film has been formed. Further analysis using Fourier transform infrared (FTIR) combined with synchrotron photoemission spectroscopy (PES) showed that the sp3 hybridization was more dominant than sp2. This gives an indication that as fabricated thin films are tetrahedrally amorphous carbon (ta-C). Keywords: Amorphous carbon, methane gas, thin film.

Structural and Texture Studies of PbS Thin Film

2010 ◽  
Vol 442 ◽  
pp. 123-129 ◽  
Author(s):  
S.K. Mehmood ◽  
S. Zaman ◽  
K. Ahmed ◽  
M.M. Asim
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Thermal Treatment ◽  
Hydrazine Hydrate ◽  
Structural Parameters ◽  
Glass Substrates ◽  
Deposition Parameters ◽  
Cubic Structure ◽  
Post Deposition

In this study, we report on the structural parameters and texture development which occurred during deposition and annealing of PbS films and their effect on optical properties. The films under study were deposited on glass substrates through chemical bath method. The reactive substances used to obtain the PbS layers were lead accetae trihydrated, thiourea and hydrazine hydrate. The films were prepared with one molar bath concentration and for various deposition times. The data showed that as-prepared and annealed thin films are polycrystalline with cubic structure and predominantly textured along 100. Results showed that thinner films are more prone to post deposition heat treatments as compared to thicker ones. Deposition parameters and thermal treatment strongly influence the optical properties of PbS films.

Microstructure and Magnetic Properties of CoFeHfO Rich Nanocrystalline Thin Films Application for High Frequency

2007 ◽  
Vol 558-559 ◽  
pp. 975-978
Author(s):  
L.V. Tho ◽  
K.E. Lee ◽  
Cheol Gi Kim ◽  
Chong Oh Kim ◽  
W.S. Cho
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Rf Sputtering ◽  
Xrd Analysis ◽  
X Ray Diffraction ◽  
Soft Magnetic ◽  
Electrical And Magnetic Properties ◽  
Transmission Electron ◽  
Nanocrystalline Thin Films

Nanocrystalline CoFeHfO thin films have been fabricated by RF sputtering method. Co52Fe23Hf10O15 thin film is observed, exhibit good magnetic properties with magnetic coercivity (Hc) of 0.18 Oe; anisotropy fild (Hk) of 49 Oe; saturation magnetization (4лMs) of 21 kG, and electrical resistivity (ρ) of 300 01cm. The frequency response of permeability of the film is excellent. The effect of microstructure on the electrical and magnetic properties of thin film was studied using X-ray diffraction (XRD) analysis and conventional transmission electron microscopy (TEM). The results showed that excellent soft magnetic properties were associated with granular nannoscale grains of α-CoFe and α-Co(Fe) phases.

Effects of Deposition Parameters and Annealing Temperatures on the Characteristics of the Sr0.6Ba0.4Nb2O6 Thin Films

2011 ◽  
Vol 415-417 ◽  
pp. 1867-1870 ◽  
Author(s):  
Chao Chin Chan ◽  
Yuan Tai Hsieh ◽  
Cheng Yi Chen ◽  
Wen Cheng Tzou ◽  
Chia Ching Wu ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxygen Concentration ◽  
Rf Sputtering ◽  
Chamber Pressure ◽  
Rf Power ◽  
Electrical Field ◽  
Si Substrates ◽  
Deposition Parameters ◽  
Capacitance Voltage ◽  
Rapid Temperature

Sr0.6Ba0.4Nb2O6 (SBN) thin films were prepared by radio frequency (RF) sputtering onto the SiO2/Si/Al and Pt/Ti/Si substrates to form the MFIS and MFM structures. Their deposition rates increased with decreasing oxygen concentration and with increasing RF power. Their optimal deposition parameters were the substrate temperature of 500°C, chamber pressure of 10 mTorr, oxygen concentration of 40%, and RF power of 120W, respectively. The rapid temperature annealing (RTA) process had large effects on the grain growth of the SBN thin films. The effects of different RTA temperatures on the leakage current density - electrical field curves and the capacitance - voltage curves of the SBN thin films were also investigated.

The Influence of Electrodes Deposition on the Interface and Dielectric Characteristics of Polymer Gate for Thin Films Transistors

2017 ◽  
Vol 1143 ◽  
pp. 227-232
Author(s):  
Elena Emanuela Herbei ◽  
Michael P.M. Jank ◽  
Susanne Oertel ◽  
Laurentiu Frangu ◽  
Viorica Mușat
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Deposition Rate ◽  
Physical Vapor Deposition ◽  
Metal Electrode ◽  
Electrical Performance ◽  
Pmma Film ◽  
Pmma Layer ◽  
Deposition Parameters ◽  
Dielectric Performance

The paper presents some results on the effect of the metal electrode deposition on the electrical performance of amorphous polymthylmetacrylate (PMMA) thin films, measured in a MIM structure consisting of metal (Al)-insulator (PMMA)-metal (Ta). Aluminium (Al) electrode was deposited by physical vapor deposition method (PVD) on the top of PMMA film with the deposition rate of 5 and 10Å/s. The effect of aluminium deposition rate and post deposition annealing temperature on the morphology of the interface between Al electrode (100 or 300 nm thick) and PMMA thin film (40 or 70 nm thick) has been investigated by cross-section scanning electron microscopy (SEM). Based on SEM data, I-V characteristic measurements and dielectric constant values of insulating films, the deposition parameters of Al top-electrode was optimised. Our results showed that when the deposition of the Al electrode take place at a rate of 10 Å/s, no inter-diffusion or interfacial reaction at the interface between Al electrode and PMMA films were observed and the best delectric parameters of PMMA thin film were measured, which led to the best dielectric performance of PMMA layer in TFT configuration.

Influence of RF Power in the Growth of Aluminium Zinc Oxide (AZO) Thin Films by RF Sputtering

2014 ◽  
Vol 925 ◽  
pp. 295-299 ◽  
Author(s):  
Mohammed Mannir Aliyu ◽  
Muhammed Aminul Islam ◽  
Qamar Huda ◽  
Sajedur Rahman ◽  
Nowshad Amin
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Transparent Conducting Oxide ◽  
Rf Sputtering ◽  
Hall Effect Measurement ◽  
Film Material ◽  
Rf Power ◽  
Smart Windows ◽  
Measurement Tools

Aluminium doped zinc oxide (AZO) is fast becoming an important thin film material for applications as transparent conducting oxide (TCO) in several thin film solar cells, smart windows and many devices using touch screen displays. This is due to its good electrical and optical characteristics as well as lower cost and good abundance. Although sputtering is the general method for industrial fabrication of this material, but film characteristics depend strongly on fabrication processes. Thus, optimal films are obtained by optimization of the deposition conditions. In this work, we investigated the effects of RF deposition power on AZO thin films. Samples of similar thicknesses were grown under similar conditions in an RF sputtering chamber at different RF powers. The samples were then characterized using FESEM, AFM, UV-Vis, XRD and Hall effect measurement tools. Results indicate that the surface morphology is slightly affected with larger grain sizes obtained at higher RF powers. Also the surface roughness, average transmittance, conductivity and deposition rate all increase with the RF power. The lowest as-deposited resistivity of 15.3x10-3 Ω/cm was obtained, at the highest RF power of 100 W. This film also have the highest values of carrier concentration, mobility and figure of merit of 4.24x1020 cm-3, 0.96 cm2/V and 0.27x10-3 Ω respectively. This work highlights the significance of RF power in the fabrication of good quality AZO thin films.

scholarly journals Effect of sputtering power on optical Properties of RF sputtering deposited Ti6Al4V Thin Films

2019 ◽  
Vol 15 (33) ◽  
pp. 71-77
Author(s):  
Mohammed K. Khalaf
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Refractive Index ◽  
Optical Properties ◽  
Glass Substrate ◽  
Rf Sputtering ◽  
Rf Power ◽  
Sputtering Power

Ti6Al4V thin film was prepared on glass substrate by RFsputtering method. The effect of RF power on the optical propertiesof the thin films has been investigated using UV-visibleSpectrophotometer. It's found that the absorbance and the extinctioncoefficient (k) for deposited thin films increase with increasingapplied power, while another parameters such as dielectric constantand refractive index decrease with increasing RF power.

An Inverter Woven from Flat Component Fibers for e-Textile Applications

2003 ◽  
Vol 769 ◽  
Author(s):  
Eitan Bonderover ◽  
Sigurd Wagner ◽  
Zhigang Suo
Keyword(s):  
Thin Film ◽  
Electrical Contact ◽  
Electrical Characterization ◽  
Device Fabrication ◽  
Radius Of Curvature ◽  
Fabrication Technology ◽  
Deposition Parameters ◽  
Weaving Pattern ◽  
Circuit Function

AbstractIn the most fundamental approach, e-Textile circuits will be made by weaving component fibers into circuits. The weaving pattern will determine the circuit function. A key requirement of such e-Textile circuits is reliable electrical contact between fibers. Contacts which rely only on the pressure between fibers are preferred since they preserve the drapability of real fabrics. Since thin-film device fabrication technology is planar, the component fibers, made by the slit-film technique, are flat. Thus a slight edge-to-edge curvature (with a radius of curvature as large as 500mm) can either prevent or promote electrical contact. Using fibers with thin-film transistors of amorphous silicon, we study the processes that produce the desired fiber curvature. A layer of stressed silicon nitride is used to create the curvature. The stress in this layer can be controlled by the deposition parameters. We present successful fabrication of curved fibers with vastly improved electrical contact. We also present electrical characterization of woven transistor circuits

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