Effect of Al-Induced Crystallization on Structure of CdZnTe Thin Films Deposited by Radio Frequency Magnetron Sputtering

2014 ◽  
Vol 941-944 ◽  
pp. 1288-1292
Author(s):  
Dong Mei Zeng ◽  
Yin Yin Mu ◽  
Wan Liu ◽  
Hai Zhou ◽  
Fei Chen
Keyword(s):  
Surface Roughness ◽  
Grain Size ◽  
Substrate Temperature ◽  
Room Temperature ◽  
Uv Spectrophotometry ◽  
Radio Frequency Magnetron Sputtering ◽  
High Quality ◽  
Crystallization Method ◽  
Lower Temperature ◽  
Induced Crystallization

Different substrate temperature of CdZnTe films and one with Al-induced crystallization have been investigated by XRD, AFM and UV-spectrophotometry. It was shown that, as the substrate temperature varied from room temperature to 400 °C, improving the substrate temperature helps to enhance the grain size of CdZnTe film, and favours the preferential orientation (111). Moreover, Al-induced crystallization method can effectively reduce the crystallization temperature of the CdZnTe film so that the film can be for high-quality oriented crystallization in a lower temperature. In addition, Al-induced crystallization can make the surface roughness of the film at a small value that facilitates the later application of the film.

scholarly journals Influence of magnetron sputtering modes on the parameters of ZnO:Ga films

2021 ◽  
Vol 2086 (1) ◽  
pp. 012009
Author(s):  
A A Geldash ◽  
E Yu Gusev ◽  
V N Dzhuplin ◽  
O A Ageev
Keyword(s):  
Surface Roughness ◽  
Grain Size ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Film Surface ◽  
Charge Carriers ◽  
Technological Parameters ◽  
Dc Power ◽  
Mobility Of Charge Carriers ◽  
Photoelectric Converters

Abstract The aim of this work is to study the effect of magnetron sputtering modes - its technological parameters (pressure, substrate temperature and DC power source) on the morphology and electrophysical parameters of nanocrystalline ZnO:Ga films, which can be used as contact layers to nanostructures of photovoltaic converters. It was found that with an increase in the substrate temperature, the grain size decreases from 80 to 30 nm and the film surface roughness, as well as the resistivity from 1.68⋅10−1 to 1.2⋅10−2 Ω⋅cm and the mobility of charge carriers with 18.12 to 5.59 cm2/(V⋅s). In this case, the concentration of charge carriers increases from 5.59⋅1018 to 3.31 ⋅ 1020 cm−3. With an increase in the power of the DC source, the grain size increases from 35 to 90 nm and the surface roughness of the ZnO:Ga films, as well as the concentration of charge carriers from 5.91⋅1018 to 3.35⋅1020 cm−3. In this case, the resistivity decreases from 1.42⋅10−2 to 1.3⋅10−2 Ω⋅cm, and the mobility of charge carriers from 6.74 to 3.22 cm2/(V⋅s). The results obtained can be used in the development of technological processes for the manufacture of highly efficient photoelectric converters.

scholarly journals Investigation of the Structural, Optical and Electrical Properties of AgInSe2 Thin Films

2018 ◽  
Vol 31 (1) ◽  
pp. 37 ◽  
Author(s):  
Iman Hameed Khudayer ◽  
Bushra Hashem Hussein Ali ◽  
Mohammed Hamid Mustafa ◽  
Ayser Jumah Ibrahim
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Grain Size ◽  
Electrical Properties ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Optical And Electrical Properties ◽  
X Ray ◽  
20 Nm

  The Silver1Indium1Selenide (AgInSe2) (AIS) thin1films of (3001±20) nm thickness  have been1prepared2from the compound alloys2using thermal evaporation2 technique onto the glass2substrate at room temperature, with a deposition rate2(3±0.1) nm2sec-1. The2structural, optical and electrical3properties have been studied3at different annealing3temperatures (Ta=450, 550 and 650) K. The amount3or (concentration) of the elements3(Ag, In, Se) in the  prepared alloy3was verified using  an energy dispersive3x-ray spectrometer (EDS)3technology. X-ray diffraction3analysis shows that AIS alloy  prepared as (powder) and the thin films3are polycrystalline  of tetragonal3structure with preferential orientation3(112). The crystalline3size increases  as a function3of annealing temperature. The atomic force3microscope (AFM) technique  was used to examine3the  topography  and  estimate3the surface roughness, also the  average grain3size of the films. The results show3that the grain size increases3with annealing3temperature.   The optical4band gap of the films lies4in the range 1.6-1.9 eV. The films4appear to be4n-type indicating that the electrons4as a dominant charge4carrier. The electrical conductivity4increases  with a corresponding4increase in annealing4temperature.  

scholarly journals Room-temperature liquid diffused separation induced crystallization for high-quality perovskite single crystals

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Fang Yao ◽  
Jiali Peng ◽  
Ruiming Li ◽  
Wenjing Li ◽  
Pengbin Gui ◽  
...  
Keyword(s):  
Single Crystals ◽  
Room Temperature ◽  
High Quality ◽  
Temperature Liquid ◽  
Induced Crystallization

Effect of Grain Size in Silica Blasting Processes on the Surface Roughness of Medical Grade SS 316L

2020 ◽  
Vol 867 ◽  
pp. 134-139
Author(s):  
Teguh Dwi Widodo ◽  
Rudianto Raharjo ◽  
Redi Bintarto ◽  
Fikrul Akbar Alamsyah
Keyword(s):  
Surface Roughness ◽  
Grain Size ◽  
Room Temperature ◽  
Mesh Size ◽  
Silica Sand ◽  
Surface Character ◽  
Nozzle Pressure ◽  
Medical Grade

The paper presents the effect of size and repetition process on silica blasting on the surface character of Medical Grade SS316L. In this study, topography and surface roughness of SS316L will be evaluated both using optical and stylus methods. Medical Grade SS316L was blasted using silica sand with a mesh size of 10-30 (then called K), mesh 40-60 (then called S), and mesh 70-90 (then called H). Silica blasting processes was carried out on the surface of Medical Grade SS316L at room temperature, 90° of nozzle direction, and 7 bar of nozzle pressure. The silica blasting process was carried out by varying the treatments of K, S, H, KH, and SH for 10 minutes each. The results show that roughness increases with the size of silica sand, moreover the repetition of the H process on the K and S (KH and SH process) will refine the surface roughness of the results of S and K processes but when compared to H is relatively coarse.

Relationship between the microstructure and nanoindentation hardness of thermally evaporated and magnetron-sputtered electrochromic tungsten oxide films

2001 ◽  
Vol 16 (6) ◽  
pp. 1541-1548 ◽  
Author(s):  
C. W. Ong ◽  
H. Y. Wong ◽  
G. K. H. Pang ◽  
K. Z. Baba-Kishi ◽  
C. L. Choy
Keyword(s):  
Grain Size ◽  
Substrate Temperature ◽  
Tungsten Oxide ◽  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Ambient Pressure ◽  
Contact Point ◽  
Film Structure ◽  
X Ray ◽  
Nanoindentation Hardness

Tungsten oxide (WOx) films were fabricated by (i) reactive thermal evaporation (RTE) at room temperature with oxygen ambient pressurePO2as a parameter, and (ii) reactive magnetron sputtering (RMS) with substrate temperatureTsas a parameter. The film structure revealed by x-ray photoelectron spectroscopy, x-ray diffraction, density measurements, infrared absorption, and atomic force microscopy was correlated with the nanoindentation hardnessH. The RTE WOxfilms deposited at highPo2were amorphous and porous, whileHdepended appreciably on normalized penetration depthhD(indentation depth/film thickness) due to the closing of the pores at the point of indentation. Decrease inPo2from 10 to 2 × 10−3mtorr led to smaller porosity, weakerhDdependence ofH, and higher averageH(measured athD≈ 0.2 to 0.3, for example). The RMS WOxfilm deposited at room temperature was amorphous and denser than all RTE films. The rise in substrate temperatureTsfirst densified the film structure (up to 110 °C) and then induced crystallization with larger grain size forTs≥ 300 °C. Correspondingly, thehDdependence ofHbecame weaker. In particular,Hof the RMS sample deposited at 110 °C showed a peak athDslightly above 1 owing to pileup at the contact point of indentation. For higherTs, pileup occurred at shallowerhDand the averageH(measured athD≈ 0.2 to 0.3, for example) rose, accompanied by the increase of grain size.

scholarly journals MORPHOLOGY, PHASE AND PHOTOLUMINESCENCE OF ZnS MICROSTRUCTURES GROWN BY THERMAL DEPOSITION AT DIFFERENT TEMPERATURE OF SUBSTRATES

2017 ◽  
Vol 33 (4) ◽  
Author(s):  
Nghia Nguyen Van
Keyword(s):  
Substrate Temperature ◽  
Atmospheric Pressure ◽  
Room Temperature ◽  
Blue Emission ◽  
X Ray Diffraction ◽  
X Ray ◽  
Uv Emission ◽  
Lower Temperature ◽  
Ar Gas ◽  
Substrate Temperatures

In this paper, we present about influent of temperature at the possitions where we puted the silica substrates on morphology, phase and photoluminescence of ZnS microstructures by thermal evaporation of ZnS powder in Ar gas ambient at atmospheric pressure. From X-ray diffraction pattern (XRD), the prepared microstructures have wurtzite (hexagonal) structures for ZnS phase and appear ZnO phase at lower temperature areas. The morphology of the microstructures change depending on substrate temperatures. The photoluminescence spectrum (PL) at room temperature shows that the shift from ultraviolet (UV) emission at high substrate temperature to strong blue emission at lower substrate temperature. The reasons of these peaks will be discussed in detail.

High thermal conductivity of pure dense SiC ceramics prepared via HTPVT

2019 ◽  
Vol 12 (03) ◽  
pp. 1950032 ◽  
Author(s):  
Yuchen Deng ◽  
Yaming Zhang ◽  
Nanlong Zhang ◽  
Qiang Zhi ◽  
Bo Wang ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Silicon Carbide ◽  
Grain Size ◽  
Phase Composition ◽  
Room Temperature ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Growth Substrate ◽  
Sic Ceramics ◽  
Evolution Of Microstructure

Pure dense silicon carbide (SiC) ceramics were obtained via the high-temperature physical vapor transport (HTPVT) method using graphite paper as the growth substrate. The phase composition, the evolution of microstructure, the thermal diffusivity and thermal conductivity at RT to 200∘C were investigated. The obtained samples had a relative density of higher than 98.7% and a large grain size of 1[Formula: see text]mm, the samples also had a room-temperature thermal conductivity of [Formula: see text] and with the temperature increased to 200∘C, the thermal conductivity still maintained at [Formula: see text].

scholarly journals Practical Synthesis of 2-Iodosobenzoic Acid (IBA) without Contamination by Hazardous 2-Iodoxybenzoic Acid (IBX) under Mild Conditions

Molecules ◽  
2021 ◽  
Vol 26 (7) ◽  
pp. 1897
Author(s):  
Hideyasu China ◽  
Nami Kageyama ◽  
Hotaka Yatabe ◽  
Naoko Takenaga ◽  
Toshifumi Dohi
Keyword(s):  
Aqueous Solution ◽  
Room Temperature ◽  
Practical Method ◽  
Hypervalent Iodine ◽  
Mild Conditions ◽  
Sequential Procedures ◽  
Iodine Compounds ◽  
Practical Synthesis ◽  
Iodosobenzoic Acid ◽  
Lower Temperature

We report a convenient and practical method for the preparation of nonexplosive cyclic hypervalent iodine(III) oxidants as efficient organocatalysts and reagents for various reactions using Oxone® in aqueous solution under mild conditions at room temperature. The thus obtained 2-iodosobenzoic acids (IBAs) could be used as precursors of other cyclic organoiodine(III) derivatives by the solvolytic derivatization of the hydroxy group under mild conditions of 80 °C or lower temperature. These sequential procedures are highly reliable to selectively afford cyclic hypervalent iodine compounds in excellent yields without contamination by hazardous pentavalent iodine(III) compound.

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