scholarly journals Influence of magnetron sputtering modes on the parameters of ZnO:Ga films

2021 ◽  
Vol 2086 (1) ◽  
pp. 012009
Author(s):  
A A Geldash ◽  
E Yu Gusev ◽  
V N Dzhuplin ◽  
O A Ageev
Keyword(s):  
Surface Roughness ◽  
Grain Size ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Film Surface ◽  
Charge Carriers ◽  
Technological Parameters ◽  
Dc Power ◽  
Mobility Of Charge Carriers ◽  
Photoelectric Converters

Abstract The aim of this work is to study the effect of magnetron sputtering modes - its technological parameters (pressure, substrate temperature and DC power source) on the morphology and electrophysical parameters of nanocrystalline ZnO:Ga films, which can be used as contact layers to nanostructures of photovoltaic converters. It was found that with an increase in the substrate temperature, the grain size decreases from 80 to 30 nm and the film surface roughness, as well as the resistivity from 1.68⋅10−1 to 1.2⋅10−2 Ω⋅cm and the mobility of charge carriers with 18.12 to 5.59 cm2/(V⋅s). In this case, the concentration of charge carriers increases from 5.59⋅1018 to 3.31 ⋅ 1020 cm−3. With an increase in the power of the DC source, the grain size increases from 35 to 90 nm and the surface roughness of the ZnO:Ga films, as well as the concentration of charge carriers from 5.91⋅1018 to 3.35⋅1020 cm−3. In this case, the resistivity decreases from 1.42⋅10−2 to 1.3⋅10−2 Ω⋅cm, and the mobility of charge carriers from 6.74 to 3.22 cm2/(V⋅s). The results obtained can be used in the development of technological processes for the manufacture of highly efficient photoelectric converters.

The Influence of Substrate Temperature on the Morphological and Optical Properties of ZnTiO3 Thin Films Prepared by Magnetron Sputtering

2013 ◽  
Vol 804 ◽  
pp. 3-7
Author(s):  
Chao Zhan ◽  
Wen Jian Ke ◽  
Xin Ming Li ◽  
Wan Li Du ◽  
Li Juan Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Refractive Index ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Dispersion Model ◽  
Film Surface ◽  
Cubic Phase ◽  
Different Temperatures

Cubic ZnTiO3thin films have been prepared by radio frequency magnetron sputtering on n-type (100) Si substrate at different temperatures. The morphological and optical properties of ZnTiO3films in relation to substrate temperatures are investigated by spectroscopic ellipsometry (SE) and AFM as well as SEM in detail. X-ray diffraction (XRD) measurement shows that all the films have a cubic phase structure and the optimum substrate temperature to form crystalline ZnTiO3thin film is 250 °C. Through SEM and AFM, the particle size in thin films and film surface roughness increase with increasing the substrate temperature. Based on a parameterized TaucLorentz dispersion model, the optical constants and surface roughness of ZnTiO3films related to the substrate temperature are systematically extracted by SE measurement. The surface roughness of the film measured from AFM agrees well with result extracted from SE, which proved that the established SE model is reasonable. With increasing substrate temperature, the refractive index decreases and the main factor in determining the refractive index was deduced to be the surface roughness related to the film packing density. The extinction coefficient of the samples is close to zero, but increases slightly with the increase of the substrate temperature, which is due to the enhancement of scattering effect in the crystalline ZnTiO3film.

Microstructure and Electrical Properties of ITO Films Deposited Using Various ITO Targets by Magnetron Sputtering

2007 ◽  
Vol 124-126 ◽  
pp. 431-434
Author(s):  
Joon Hong Park ◽  
Sang Chul Lee ◽  
Jin Ho Lee ◽  
Pung Keun Song
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Target Surface ◽  
Flow Ratio ◽  
Dc Power ◽  
Alkali Glass ◽  
Oxygen Ratio ◽  
Ito Films

Indium Tin Oxide (ITO) films were deposited on non-alkali glass substrate by magnetron sputtering using commercial ITO target (target A) and improved ITO target (target B). Depositions were carried out at total gas pressure (Ptot) of 0.5 Pa, substrate temperature (Ts) of RT ~ 300 °C, oxygen flow ratio [O2/(O2+Ar)] of 0 ~ 1.0% and dc power of 100W. Target B showed relatively higher stability in film resistivity with increasing sputtering time, i.e., erosion ratio of target surface. Optimum oxygen ratio to obtain the lowest resistivity was decreased with increasing substrate temperature. The lowest resistivity was 1.06x10-4 6cm for the film deposited using target B at O2/(O2+Ar) ratio of 0.05% and at Ts =300 °C.

Investigation on the Effect of the Substrate Temperature on the Photoelectric Properties of the Ga Doped ZnO Film

2016 ◽  
Vol 852 ◽  
pp. 1066-1069 ◽  
Author(s):  
Hong Tao Zhao ◽  
Yi Qiao Shi ◽  
Min Tian
Keyword(s):  
Crystal Structure ◽  
Grain Size ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Hall Mobility ◽  
Silica Glass ◽  
Visible Region ◽  
Zno Film ◽  
Photoelectric Properties ◽  
Doped Zno

The Ga doped ZnO film (GZO) was fabricated via magnetron sputtering on the substrate of silica glass. The effect of substrate temperature on the photoelectric properties of GZO film, such as morphology, grain size, crystal structure and transparency was studied. The results showed us that the crystallinity of GZO film was improved by increasing the substrate temperature . The GZO film exhibited high transmittance (above 80% in the visible region) at the substrate temperature higher than 200°C. The lowest resistivity of 4.45×10-4Ω·cm and highest hall mobility of 11.7 cm2 v-1s-1 were obtained when the substrate temperature was 300°C.

Influence of Process Parameters on the Properties of TiO2 Films Deposited by a D.C. Magnetron Sputtering System on Glass Support

2015 ◽  
Vol 660 ◽  
pp. 86-92 ◽  
Author(s):  
Stefan Lucian Toma ◽  
Costica Bejinariu ◽  
Eva Lucian ◽  
Ioan Gabriel Sandu ◽  
Bogdan Florin Toma
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Process Parameters ◽  
Sem Analysis ◽  
Technological Parameters ◽  
Average Roughness ◽  
Working Pressure ◽  
Influence Of Process Parameters ◽  
Deposited Films ◽  
Sputtering System

In this paper it has been deposited films of titanium oxide (TiO2), on a support of glass, by a D.C. magnetron sputtering system, by varying the working pressure (p = 2∙10-3 - 6.5∙10-3mbar) of the substrate temperature on three levels. The obtained layers were investigated and characterized by optical microscopy, Scanning Electron Microscopy SEM, X-ray diffraction and Atomic Force Microscopy. It was observed that, by modifying technological parameters of the process (working pressure and substrate temperature) it is changing the initial orientation of the compounds ((100) turns into (101) or (002)). The AFM analysis has allowed the observation of the fact that the average roughness of deposited films, expressed as RMS, has increased over 98% at the increasing of sputtering pressure from 2 10-3mbar to 6.5 10-3mbar. SEM analysis showed that the density of the deposit increases with substrate temperature. The granulation of the films obtained, presents an increasing trend with the variation of process parameters.

AFM STUDIES OF VARIOUS NIOBIUM AND ALUMINIUM THIN FILMS FOR THEIR USE IN JOSEPHSON JUNCTIONS

2001 ◽  
Vol 08 (06) ◽  
pp. 689-692
Author(s):  
SHAHZAD NASEEM
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Magnetron Sputtering ◽  
Atomic Force Microscope ◽  
Josephson Junctions ◽  
Smooth Surface ◽  
Film Surface ◽  
Rf Magnetron Sputtering ◽  
Atomic Force ◽  
Sputter Deposited

Nb thin films have been prepared with e-beam evaporation under UHV conditions, and by RF magnetron sputtering. Al thin films were deposited by resistive heating in the UHV chamber. The preparation of these films and the trilayers of Nb/AlO x /Nb are intended for their use in Josephson junctions. Surface studies of these films are undertaken by using an atomic force microscope in the noncontact mode. These studies have revealed that the sputter-deposited Nb film surface is smoother than that of the UHV e-beam evaporated with R rms values of 3.5 and 4.0 nm respectively. Al thin films have a very smooth surface, with an R rms value of only 0.9 nm. Consequently, UHV-evaporated Nb thin films deposited on top of Al thin films are smoother, with a surface roughness of 1.8 nm.

Technological Parameters and Electrical Properties of Ti/TiN Multilayer Films Prepared by Magnetron Sputtering

2010 ◽  
Vol 654-656 ◽  
pp. 1752-1755
Author(s):  
Min Hu ◽  
Ying Liu ◽  
Zhen Quan Lai
Keyword(s):  
Electrical Resistivity ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Sheet Resistance ◽  
Current Density ◽  
Multilayer Films ◽  
Technological Parameters ◽  
Modulation Period ◽  
Number Of Cycles

A series of Ti/TiN multilayer films was deposited on Si substrates by DC reactive magnetron sputtering process. The influence of sputtering current density and substrate temperature on cycle membrane structure and its electrical properties was investigated in this study. The results show that: when the current density is 0.4A, the sheet resistance and electrical resistivity of the film are of the minimum value. The sheet resistance and electrical resistivity of the film decrease with an increase of substrate temperature. Therefore, sputtering current density should be controlled between 0.3-0.4A, while the substrate temperature should be above 400°C. For a given modulation period and modulation ratio, with the change of number of cycles the films can present a unique set of colours, and its electrical resistivity decreases with an increase in the number of cycles. When the number of cycles is greater than 4, the sheet resistance is significantly reduced, and when the number is greater than 15, the prepared films come off. To keep the number of cycles at five and change the modulation period, it is shown that a minimum electrical resistivity exists.

scholarly journals Investigation of Morphology of Aluminum Co-Doped Scandium Stabilized Zirconia (ScAlSZ) Thin Films

Coatings ◽  
2021 ◽  
Vol 12 (1) ◽  
pp. 31
Author(s):  
Arvaidas Galdikas ◽  
Mantas Sriubas ◽  
Gediminas Kairaitis ◽  
Darius Virbukas ◽  
Kristina Bockute ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Surface Roughness ◽  
Substrate Temperature ◽  
Deposition Rate ◽  
Deposition Temperature ◽  
Film Surface ◽  
Lateral Size ◽  
Stabilized Zirconia ◽  
Co Doped

The morphology of aluminum co-doped scandium stabilized zirconia (ScAlSZ) thin films formed by e-beam deposition system was investigated experimentally and theoretically. The dependencies of surface roughness, and the films’ structure on deposition temperature and deposition rate were analyzed. It was shown experimentally that the dependence of the surface roughness on deposition temperature and deposition rate was not monotonic. Those dependencies were analyzed by mathematical modeling. The mathematical model includes the processes of phase separation, adsorption and diffusion process due to the film surface curvature. The impacts of substrate temperature, growth rate on surface roughness of thin films and lateral nanoparticle sizes are shown by the modeling results. Modeling showed that the roughness of the surface of grown films became higher in most cases as the substrate’s temperature rose, but the higher deposition rate resulted in lower surface roughness in most cases. The results obtained by simulations were compared to the relevant experimental data. The non-linear relationships between surface roughness of grown films and lateral size of nanoparticles were also shown by our modeling results, which suggested that the variation in the surface roughness depending on the substrate temperature and growth rate was related to the lateral size of nanoparticles.

scholarly journals Structure and morphology of nano-sized W-Ti/Si thin films

2006 ◽  
Vol 71 (8-9) ◽  
pp. 969-976 ◽  
Author(s):  
Suzana Petrovic ◽  
Borivoje Adnadjevic ◽  
Davor Perusko ◽  
Nada Popovic ◽  
Nenad Bundaleski ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Roughness ◽  
Grain Size ◽  
Phase Composition ◽  
Surface Segregation ◽  
Morphological Characteristics ◽  
Film Surface ◽  
Scanning Tunneling ◽  
Tunneling Microscopy

Thin films were deposited by d.c. sputtering onto a silicon substrate. The influence of the W-Ti thin film thickness to its structural and morphological characteristics of a nano-scale were studied. The phase composition and grain size were studied by X-ray diffraction (XRD), while the surface morphology and surface roughness were determined by scanning tunneling microscopy (STM). The analysis of the phase composition show that the thin films had a polycrystalline structure - they were composed of a b.c.c. W phase with the presence of a h.c.p. Ti phase. The XRD peak in the scattering angle interval of 38?-43? was interpreted as an overlap of peaks corresponding to the W(110) and Ti(101) planes. The grain size and the mean surface roughness both increase with the thikness of the thin film. The chemical composition of the thin film surface was also analyzed by low energy ions scattering (LEIS). The results show the surface segregation of titanium, as well as a substantial presence of oxygen an the surface.

The Study on Surface Morphology and Residual Stress of Al2O3 Film

2013 ◽  
Vol 275-277 ◽  
pp. 2006-2009
Author(s):  
Ying Dong Pu ◽  
Wu Tang ◽  
Yu Tong Yang
Keyword(s):  
Residual Stress ◽  
Surface Roughness ◽  
Surface Morphology ◽  
Substrate Temperature ◽  
Film Surface ◽  
Electron Beam Evaporation ◽  
Important Condition ◽  
Force Microscopy ◽  
Atom Force Microscopy ◽  
Film Microstructure

The aluminum oxide (Al2O3) films are grown on n-type Si-(100) substrate by electron beam evaporation at substrate temperature 500°C~800°C. The Al2O3film surface morphology is characterized by atom force microscopy (AFM) to evaluate the grain microstructure, and the residual stress was investigated by wafer stress analyzer. The results show that different substrate temperature is important condition to the properties of Al2O3film. Microstructure characterization indicates that the film surface at low substrate temperature is smoother, and the surface roughness of these Al2O3films is in the range 1-6 nm. The residual stress increases with increasing the substrate temperature, while the stress decreases after annealing in N2condition. It also can be concluded that the microstructure is correlated with residual stress.

Surface Roughness in Alumina Thin Film Deposited on Silica Using Oblique Incidence

2014 ◽  
Vol 787 ◽  
pp. 373-377 ◽  
Author(s):  
Li Jun He ◽  
Chuan Li ◽  
Xing Zhao Liu
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Film Thickness ◽  
Substrate Temperature ◽  
Deposition Rate ◽  
Film Surface ◽  
Electron Beam Evaporation ◽  
Oblique Angle Deposition ◽  
Inclined Angle ◽  
Physical And Chemical

The main characteristics of a surface are physical and chemical structure, surface tension and surface roughness. Surface roughness is one of the critical factors, which could cause instability in quality performance. In this paper, surface roughness of alumina thin films deposited on a silicon substrate by using electron beam evaporation with oblique angle deposition were studied. It has been found that the surface roughness of the alumina thin films was dependent on the substrate temperature, the deposition rate, the film thickness and the inclined angle. The experimental results showed that increasing the substrate temperature reduced the surface roughness at a low inclined angle and enhanced the surface roughness at a high inclined angle, and the surface roughness increased with increasing deposition rate and film thickness. By choosing the appropriate film preparation parameters, the film surface roughness was effectively controlled.

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