Research about the Testing Methods of Varistor Tester

2014 ◽  
Vol 986-987 ◽  
pp. 1545-1548
Author(s):  
Fu Quan Wang ◽  
Jin Huang ◽  
Kang Gao ◽  
Zhuang Ouyang ◽  
Chao Sheng Liang
Keyword(s):  
Leakage Current ◽  
Test Data ◽  
Testing Methods ◽  
Voltage Ratio ◽  
Current Voltage

We had described and discussed the testing methods of varistor tester about DC reference current, varistor voltage, leakage current, voltage ratio, and provided the corresponding test data,which has proved that the methods are feasible.

Structural and Electrical Characterization of Si-Implanted TiN as a Diffusion Barrier for Cu Metallization

1995 ◽  
Vol 391 ◽  
Author(s):  
W.F. Mcarthur ◽  
K.M. Ring ◽  
K.L. Kavanagh
Keyword(s):  
Leakage Current ◽  
Diffusion Barrier ◽  
Depth Profiling ◽  
Electrical Characterization ◽  
Implantation Dose ◽  
Cu Metallization ◽  
Reverse Leakage Current ◽  
Transmission Electron ◽  
Current Voltage

AbstractThe feasibility of Si-implanted TiN as a diffusion barrier between Cu and Si was investigated. Barrier effectiveness was evaluated via reverse leakage current of Cu/TixSiyNz/Si diodes as a function of post-deposition annealing temperature and time, and was found to depend heavily on the film composition and microstructure. TiN implanted with Si28, l0keV, 5xl016ions/cm2 formed an amorphous ternary TixSiyNz layer whose performance as a barrier to Cu diffusion exceeded that of unimplanted, polycrystalline TiN. Results from current-voltage, transmission electron microscopy (TEM), and Auger depth profiling measurements will be presented. The relationship between Si-implantation dose, TixSiyNz structure and reverse leakage current of Cu/TixSiyNz/Si diodes will be discussed, along with implications as to the suitability of these structures in Cu metallization.

Study on Schottky Diode Characteristics Improving by X-Ray Irradiation

2013 ◽  
Vol 717 ◽  
pp. 113-116
Author(s):  
Sani Klinsanit ◽  
Itsara Srithanachai ◽  
Surada Ueamanapong ◽  
Sunya Khunkhao ◽  
Budsara Nararug ◽  
...  
Keyword(s):  
Leakage Current ◽  
Schottky Diode ◽  
Room Temperature ◽  
The Other ◽  
Low Power Consumption ◽  
Initial Value ◽  
X Ray ◽  
Forward Current ◽  
Current Voltage ◽  
Current Voltage Characteristics

The effect of soft X-ray irradiation to the Schottky diode properties was analyzed in this paper. The built-in voltage, leakage current, and work function of Schottky diode were investigated. The current-voltage characteristics of the Schottky diode are measured at room temperature. After irradiation at 70 keV for 55 seconds the forward current and leakage current are increase slightly. On the other hand, the built-in voltage is decrease from the initial value about 0.12 V. Consequently, this method can cause the Schottky diode has low power consumption. The results show that soft X-ray can improve the characteristics of Schottky diode.

scholarly journals Highly Rectifying Heterojunctions Formed by Annealed ZnO Nanorods on GaN Substrates

Nanomaterials ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 508 ◽  
Author(s):  
Stanislav Tiagulskyi ◽  
Roman Yatskiv ◽  
Hana Faitová ◽  
Šárka Kučerová ◽  
David Roesel ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Leakage Current ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Zno Nanorods ◽  
Carrier Injection ◽  
Ion Beam Lithography ◽  
Current Voltage ◽  
P Type ◽  
Surface Leakage

We study the effect of thermal annealing on the electrical properties of the nanoscale p-n heterojunctions based on single n-type ZnO nanorods on p-type GaN substrates. The ZnO nanorods are prepared by chemical bath deposition on both plain GaN substrates and on the substrates locally patterned by focused ion beam lithography. Electrical properties of single nanorod heterojunctions are measured with a nanoprobe in the vacuum chamber of a scanning electron microscope. The focused ion beam lithography provides a uniform nucleation of ZnO, which results in a uniform growth of ZnO nanorods. The specific configuration of the interface between the ZnO nanorods and GaN substrate created by the focused ion beam suppresses the surface leakage current and improves the current-voltage characteristics. Further improvement of the electrical characteristics is achieved by annealing of the structures in nitrogen, which limits the defect-mediated leakage current and increases the carrier injection efficiency.

Improving Sensitivity of p-n Junction Temperature Sensor by Carrier Lifetime Modification

2008 ◽  
Vol 55-57 ◽  
pp. 517-520
Author(s):  
Amporn Poyai ◽  
E. Ratanaudomphisut ◽  
J. Supadech ◽  
N. Klunngien ◽  
C. Hruanan ◽  
...  
Keyword(s):  
Leakage Current ◽  
Temperature Sensor ◽  
Carrier Lifetime ◽  
Reverse Current ◽  
Junction Temperature ◽  
Carrier Generation ◽  
Current Voltage ◽  
Generation Lifetime

This paper presents the relation between the staring cobalt thickness with carrier generation lifetime, which effects to the sensitivity of p-n junction temperature sensor. The starting cobalt thickness of 12, 20 and 30nm have been used. The carrier generation lifetimes have been calculated from the reverse current-voltage (I-V) characteristics. The highest carrier generation lifetime has been obtained in the case of 12nm starting cobalt thickness. The highest sensitivity of p-n junction temperature sensor has also been observed from the case of 12nm starting cobalt thickness. The sensitivity has been calculated from the relation between leakage current versus temperature. The sensitivity of p-n junction temperature sensor can be improved by increasing carrier generation lifetime.

Analysis On-Board Charger to the Influence of Power Quality

2013 ◽  
Vol 724-725 ◽  
pp. 1330-1335
Author(s):  
Dong Ming Jia ◽  
Chun Lin Guo ◽  
Yu Bo Fan ◽  
Zhe Ci Tang
Keyword(s):  
Power Quality ◽  
Test Data ◽  
Reactive Power ◽  
Charging Station ◽  
Electric Car ◽  
Current Voltage ◽  
Capacitive Load ◽  
National Power ◽  
Small Distortion ◽  
Frequency Harmonic

In this paper, one on-board charger in the charging station will be used to test its charging process. We screen the data which has the typical characteristics of power parameters from test data, and compared with the national power quality standards. We can get the following conclusions: (1) The electric car battery is capacitive load, it may transfer the reactive power to grid in the process of charging;(2) The test data imply that frequency deviation, power factor and VTHD e.g. indexes are qualified;(3) On-board charger is mainly produced the odd harmonics in the process of charging, with the increase of harmonic frequency, harmonic contain lower rate;(4) In practice, harmonic mainly reflects on the current, voltage only has a small distortion.

Correlation between Leakage Current and Ion-Irradiation Induced Defects in 4H-SiC Schottky Diodes

2006 ◽  
Vol 527-529 ◽  
pp. 1167-1170 ◽  
Author(s):  
Vito Raineri ◽  
Fabrizio Roccaforte ◽  
Sebania Libertino ◽  
Alfonso Ruggiero ◽  
V. Massimino ◽  
...  
Keyword(s):  
Leakage Current ◽  
Ion Irradiation ◽  
Deep Level ◽  
Schottky Diodes ◽  
Arrhenius Dependence ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Irradiation Induced Defects

The defects formation in ion-irradiated 4H-SiC was investigated and correlated with the electrical properties of Schottky diodes. The diodes were irradiated with 1 MeV Si+-ions, at fluences ranging between 1×109cm-2 and 1.8×1013cm-2. After irradiation, the current-voltage characteristics of the diodes showed an increase of the leakage current with increasing ion fluence. The reverse I-V characteristics of the irradiated diodes monitored as a function of the temperature showed an Arrhenius dependence of the leakage, with an activation energy of 0.64 eV. Deep level transient spectroscopy (DLTS) allowed to demonstrate that the Z1/Z2 center of 4H-SiC is the dominant defect in the increase of the leakage current in the irradiated material.

Finding Errors in Programs for Processing Graphic Images using the Fuzzing Method

2021 ◽  
pp. 4-23
Author(s):  
G.S. Baydin ◽  
M.V. Khizova
Keyword(s):  
Bayesian Networks ◽  
Software Testing ◽  
Test Data ◽  
Simulation Environment ◽  
Structural Components ◽  
Testing Methods ◽  
Process Step ◽  
Executable Code ◽  
Graphic Images ◽  
Graphics Processing

Increasing number of software for automated graphics processing requires effective testing methods. One of these methods is fuzzing, for which it is necessary to determine the most effective algorithms for creating test data in order to increase the number of errors found and minimize hardware resources. The comparison of algorithms for creating test data for finding errors in the executable code of programs designed for processing graphic images is the result of the performed research. Using Bayesian networks to describe fuzzing allows determining the relationships between structural components during testing. Based on the results of the comparison of fuzzing algorithms for creating test data, the most effective algorithms for finding errors in the executable code of programs for processing graphic images have been identified. The performance of the proposed algorithms was tested on a number of existing vulnerabilities classified as CVE (Common Vulnerabilities and Exposures). The processing of the results of experiments on the creation of test data was carried out using the simulation environment, allowing analyzing the testing process step by step. The obtained research results, algorithms for creating test data for finding errors can be used at various stages of software testing

SURFACE LEAKAGE CURRENT RELATED $\frac{1}{f}$ NOISE IN NONILLUMINATED FOCAL PLANE ARRAY Hg1-xCdxTe DIODE

2003 ◽  
Vol 03 (04) ◽  
pp. L379-L388 ◽  
Author(s):  
J. P. PEREZ ◽  
P. SIGNORET ◽  
M. MYARA ◽  
I. ASAAD ◽  
B. ORSAL
Keyword(s):  
Leakage Current ◽  
Dark Current ◽  
Focal Plane ◽  
Dynamic Resistance ◽  
Noise Spectral Density ◽  
Noise Current ◽  
Surface Leakage Current ◽  
Dc Characteristics ◽  
Current Voltage ◽  
Surface Leakage

Experimental results are presented for current-voltage and dynamic resistance-voltage characteristics of Hg1-xCdxTe ion implanted n+-on-p junction photodiodes with x = 0,3. By measuring the temperature dependence of the dc characteristics in the temperature range [77 K, 175 K], it was found that the dark current can be represented with two components at low reverse-bias: diffusion and surface leakage current. Furthermore, reporting on electrical noise spectral density as a function of temperature and dark current, we assume that below 120 K, [Formula: see text] noise current is surface leakage current related.

Molecular Ordering and the Current-Voltage Characteristics of m-MTDATA Thin Films

2007 ◽  
Vol 124-126 ◽  
pp. 427-430
Author(s):  
Seong Oh ◽  
Do Soon Kang ◽  
Dae Won Park ◽  
Young Son Choe
Keyword(s):  
Thin Films ◽  
Electromagnetic Field ◽  
Leakage Current ◽  
Thermal Annealing ◽  
Hole Injection ◽  
Root Mean Square Roughness ◽  
Molecular Ordering ◽  
Current Voltage ◽  
Ito Glass ◽  
Current Voltage Characteristics

Molecular ordering and current-voltage characteristics of vacuum-deposited m-MTDATA(4,4’,4’’-tris[N,-(3-methylphenyl)-N-phenylamino]triphenylamine), widely used as a hole injection material in OLEDs, thin films were investigated. Molecular ordering was induced by thermal annealing under electromagnetic field after deposition of m-MTDATA onto the pre-patterned ITO glass. AFM and XRD analysis were employed to characterize the topology and molecular ordering of m-MTDATA thin films. The XRD and AFM results show that m-MTDATA can be molecularly ordered by means of thermal annealing under electromagnetic field. Thermal annealing at 100°C was desirable to get a high degree of molecular ordering with dendritic grains. It was shown that molecular ordering as well as larger dendritic grains in the thin films influenced on improving the current-voltage characteristics and increasing the leakage current of the ITO/m-MTDATA/Al device. Electromagnetic field improved the surface roughness, as well. It is regarded that Rpv seems more significant than the other roughness parameters. Significantly lower Rpv(peak-to-valley roughness) obtained by both thermal annealing and electromagnetic field resulted in enhancing the stability of the current ITO/m-MTDATA/Al device. Ra(average roughness) and Rrms(root-mean-square roughness), however, did not significantly relate with leakage current.

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