Computer Simulation on the Motion Tracks of Ice Fixed Abrasives Polishing

2010 ◽  
Vol 426-427 ◽  
pp. 376-380 ◽  
Author(s):  
Yu Li Sun ◽  
Dun Wen Zuo ◽  
Jun Li ◽  
Wen Zhuang Lu ◽  
Z.Z. Yu
Keyword(s):  
Computer Simulation ◽  
Silicon Wafer ◽  
Size Range ◽  
Precision Machining ◽  
Speed Ratio ◽  
Polishing Process ◽  
Polishing Pad ◽  
Ultra Precision

Ice fixed abrasives (IFA) polishing is a novel ultra-precision machining method. The motion tracks of abrasives during IFA polishing have an important effect on the quality of the machined silicon wafer. Firstly, the motion tracks of IFA polishing are theoretically analyzed in this paper. It is founded that the paths of any point in the IFA polishing pad relative to the wokpiece are a group of cycloids. Then, the motion tracks of single abrasive and multiple abrasives in the IFA polishing pad are simulated respectively. The results show that increasing the eccentricity is beneficial to the enlargement of the size range of polishing process. With the increasing of the speed ratio between the IFA polishing pad and the workpiece, the abrasive at higher speed can leave longer tracks on the workpiece than that at lower speed at the same time. The more the abrasives, the more uniform the mark density under the influence of more abrasives.

The Effect of Speed Matching on the CMP Uniformity

2011 ◽  
Vol 189-193 ◽  
pp. 4154-4157 ◽  
Author(s):  
Zhi Xue Guo ◽  
Jing Zhai ◽  
Hui Zhang ◽  
Qing Zhong Li
Keyword(s):  
Relative Motion ◽  
Great Influence ◽  
Speed Ratio ◽  
Polishing Process ◽  
Polishing Pad ◽  
Chemical Mechanical Polishing Process ◽  
Relationship Of ◽  
The Mathematical Model ◽  
The Relationship

In the chemical mechanical polishing process, the relationship of relative motion of polishing pad and polishing head plays very important role for CMP quality. This paper established the mathematical model in order to investigate the relative motion of polishing pad and polishing head. It was found that the speed ratio of polishing pad and polishing head shows great influence on the CMP uniformity. And when the value of speed ratio of relative rotation approaches 1.23, the distribution of abrasives’ trajectories is close and uniform. Theoretically, the surface quality of workpiece is better.

Material Removal and Application by Chemical Impact Reaction in Nano-Abrasive Jet Polishing

2013 ◽  
Vol 631-632 ◽  
pp. 550-555
Author(s):  
Wen Qiang Peng ◽  
Sheng Yi Li ◽  
Chao Liang Guan ◽  
Xin Min Shen
Keyword(s):  
Material Removal ◽  
Abrasive Particle ◽  
Precision Machining ◽  
Optical Surface ◽  
Polishing Process ◽  
Abrasive Particles ◽  
Mechanical Process ◽  
Abrasive Jet Polishing ◽  
Ultra Precision ◽  
Machining Properties

Material removed by mechanical process inevitably causes surface or subsurface damage containing cracks, plastic scratch, residual stress or dislocations. In nano-abrasive jet polishing (NAJP) the material is removed by chemical impact reaction. The chemical impact reaction is validated by contrast experiment with traditional lap polishing process in which the material is mainly removed through mechanical process. Experiment results show the dependence of the abrasive particles on the choice of materials. Even if the abrasive particle and the workpiece are composed of similar components, the machining properties are remarkably different due to slight differences in their physical properties or crystallography etc. Plastic scratches on the sample which was polished by the traditional mechanical process are completely removed by NAJP process, and the surface root-square-mean roughness has decreased from 1.403nm to 0.611nm. The NAJP process will become a promising method for ultra precision machining method for ultrasmooth optical surface.

A Study on Surface Quality of GaN with CMP Polishing Process

2011 ◽  
Vol 291-294 ◽  
pp. 1764-1767
Author(s):  
Wei Li ◽  
Ming Ming Ma ◽  
Bin Hu
Keyword(s):  
Surface Roughness ◽  
Particle Size ◽  
Gallium Nitride ◽  
Surface Quality ◽  
Chemical Reaction ◽  
Experimental Result ◽  
Precision Machining ◽  
Polishing Process

This paper introduced a polishing process for planarization of gallium nitride (GaN) wafer by polishing slurry that is made up by the chemical reaction with H2O2 solution and iron. Some different polishing parameters in the polishing process has been analyzed, which affect the surface quality of wafers, such as slurry particle size, polishing times, polishing slurry etc., and trying to improve the polishing process by optimization of the polishing parameters. The experimental result showed that this polishing method has an effect on the surface quality of GaN wafers, finally, the efficient and precision machining with surface roughness of GaN wafers of Ra0.81 nm has been gained by the CMP polishing process.

Machine Integrated Measurement of Ultra Precision Machined Specular Non-Rotational Symmetrical Surfaces

2014 ◽  
Vol 907 ◽  
pp. 277-289 ◽  
Author(s):  
Eckart Uhlmann ◽  
Gerhard Häusler ◽  
Christian Röttinger ◽  
Evelyn Olesch ◽  
Christian Faber ◽  
...  
Keyword(s):  
Machine Tool ◽  
Optical Measurement ◽  
Installation Space ◽  
Precision Machining ◽  
Test Surface ◽  
Full Field ◽  
Rotationally Symmetric ◽  
Ultra Precision ◽  
Height Data

In this paper, current results of a research project combining ultra precision machining and optical measurement are presented. The goal is to improve the quality of specular freeform surfaces manufactured by ultra precision slow slide servo turning by running appropriate correction cycles on the basis of machine integrated measurements. These measurements are conducted using the principle of Phase Measuring Deflectometry (PMD) in order to optically acquire full-field 3D-height data. For this purpose, a special setup the so called Mini PMD that can be operated within the limited installation space of an ultra precision machine tool has been designed and implemented. Results of machine integrated measurements of a specular non-rotational symmetrical surface are presented. Furthermore, using Mini PMD and a rotationally symmetric test surface, a complete correction cycle is demonstrated without the necessity of taking the workpiece off the machine for measurement.

Ultra-precision machining by the hydrodynamic polishing process

1996 ◽  
Vol 36 (2) ◽  
pp. 275-291 ◽  
Author(s):  
Yaw-Terng Su ◽  
Chuen-Chyi Horng ◽  
Shuh-Yi Wang ◽  
Shao-Herng Jang
Keyword(s):  
Precision Machining ◽  
Polishing Process ◽  
Ultra Precision

A Study of Double Sided Polishing Process for Ultra-Smooth Surface of Silicon Wafer

2006 ◽  
Vol 532-533 ◽  
pp. 472-475 ◽  
Author(s):  
Wei Li ◽  
Xiao Dong Hu ◽  
Yang Fu Jin ◽  
Gang Xiang Hu ◽  
Xiao Zhen Hu
Keyword(s):  
Silicon Wafer ◽  
Smooth Surface ◽  
Rotation Speed ◽  
Computer Control ◽  
Machining Process ◽  
Computer Control System ◽  
Polishing Process ◽  
Surface Machining ◽  
Finishing Process

Double sided polishing process has become a main machining method for silicon wafer finishing process, but it is difficult to get ultra-smooth surface with the very stringent machining conditions. In this paper, the mechanism of ultra-smooth surface machining process was studied, the main parameters affecting the surface quality of silicon wafer, such as the polishing pad and carrier rotation speed, polishing press, polishing slurries etc. , were discussed and optimized, then ultra-smooth surface of silicon wafer with Ra 0.4nm has been obtained based on the above study. A new double sided polishing machine with computer control system equipped with a digital controlled press valve was developed, and the ultra-smooth machining process of silicon wafer was established in this paper.

Micro-Quality Control on Ultra-Precision Machining of Sapphire Substrates

2010 ◽  
Vol 102-104 ◽  
pp. 738-741
Author(s):  
Hai Zhou ◽  
Li Gang Bai ◽  
Dai Pin Wang
Keyword(s):  
Surface Roughness ◽  
Ph Value ◽  
Diamond Wheel ◽  
Precision Machining ◽  
New Approach ◽  
Sapphire Substrates ◽  
Ductile Mode ◽  
Ultra Precision ◽  
Main Factors

This paper proposed a new approach to control the micro-quality of sapphire substrate, in order to grow GaN on substrate. The main factors that influence macro-quality are the method of slicing, grinding and polishing. Thread speed of slicing is less than 0.5m/s. Ductile mode grinding of substrate is achieved by #3000 diamond wheel and feed of 1μm/r. The suitable polishing conditions are that the SiO2 grain size is less than 10nm, the concentration SiO2 is 3％, pH value of polishing liquid is 10.5 and polishing stress is 190Pa. The undamaged substrates have been obtained steadily. The surface roughness RMS is less than 0.4 nm.

Research on Flexible Bonnet Polishing Process Method and Related Technology

2012 ◽  
Vol 490-495 ◽  
pp. 2916-2920
Author(s):  
Shu Jing Sha ◽  
Long Shan Wang ◽  
Yong Jie Shi
Keyword(s):  
Free Surface ◽  
Material Removal ◽  
Dwell Time ◽  
Polishing Process ◽  
Bonnet Polishing ◽  
The Core ◽  
Ultra Precision ◽  
Polishing Tool ◽  
Process Method

Bonnet tool polishing is one kind of methods that can obtain higher surface quality of the ultra precision processing for producing flat, aspheric and other mould free surface, etc. The latest development and research results on bonnet polishing technology at home and abroad were reviewed. The core technologies of bonnet polishing were analyzed, including polishing principles, polishing tool, the rate of material removal, edge control, dwell time, path planning etc. The results show that the bonnet polishing method is an economic, efficient, practical and high precision polishing technology.

Research on Precision Mirror Machining Technology for W-Mo Alloy

2011 ◽  
Vol 487 ◽  
pp. 303-307
Author(s):  
Jia Liang Guan ◽  
H.W. Lu ◽  
X.H. Xiao ◽  
Y.C. Wu ◽  
Z.D. Chen
Keyword(s):  
Surface Quality ◽  
Formation Mechanism ◽  
Rotational Speed ◽  
Precision Machining ◽  
Work Piece ◽  
Mirror Surface ◽  
Precision Grinding ◽  
Elid Grinding ◽  
Ultra Precision

A new way of precision machining was studied through the experiments of Electrolytic In-Process Dressing (ELID) precision grinding and ultra precision lapping and polishing for W-Mo metal alloy. First a 22nm(Ra) surface was obtained through the ELID grinding, last a 11nm(Ra) surface was obtained after the process of lapping and polishing with 0.1～0.3 N/cm2pressure, 60～100 r/min rotational speed and other optimized parameters. Meanwhile, the formation mechanism of ultra precision mirror surface of the alloy was also analyzed. The experiments prove surface quality of the work piece was guaranteed by ELID grinding, and which was also greatly affected by some parameters in lapping and polishing such as pressure, rotational speed.

Machining Characteristics of Semibonded Abrasive Grinding Plate

2008 ◽  
Vol 53-54 ◽  
pp. 173-178
Author(s):  
Ju Long Yuan ◽  
Yi Yang ◽  
Zhi Wei Wang ◽  
Dong Qiang Yu ◽  
Miao Qian ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Silicon Wafer ◽  
Removal Rate ◽  
Abrasive Particle ◽  
Precision Machining ◽  
Wafer Surface ◽  
Abrasive Machining ◽  
Fine Surface ◽  
Ultra Precision ◽  
Machining Characteristics

This work aims to obtain fine surface of silicon wafer during precision and ultra precision machining, and presents a new method called semibonded abrasive machining. A semibonded abrasive grinding plate is used in the semibonded abrasive machining. Abrasive particle of 1000# Green SiC and bond named SSB are adopted in the manufacture of the plate. Four plates with different concentration of bond which are 1.5%, 2.5%, 3.5%, 4.5% respectively are made. The paper studies the effect of concentration of bond, the control parameters which include the lapping time, the load, and the rotating velocity of the plate on the surface roughness. Experimental results indicate each plate with different concentration of bond can obtain fine surface roughness. When the load or the rotating velocity increases, there is little effect on the surface roughness, but the material removal rate increases correspondingly. The initial roughness of the silicon wafer surface lapping by the plate could be improved from Ra 0.2μm to Ra 0.02μm in 9 min.

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