Influence of Post-Deposition Annealing on Structure and Optical Characteristics of Niobium Oxide Thin Films

In this work, niobium oxide thin films were deposited on silicon wafer (100) and glass slide substrate by reactive magnetron sputtering. The niobium oxide films were further annealed and effect of post annealing on the crystallinity, microstructure and optical properties was studies. In order to identify the crystalline structure and microstructure, X-ray diffraction (XRD) and scanning electron microscope (SEM) measurement carried out. The optical property was determined by UV-Vis spectrophotometer. It has been observed that with increase in annealing temperature films become microcrystalline films. In particularly, the optical property of niobium oxide thin film also improves with annealing temperature.

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Effect of Annealing Temperature on Platinum/YSZ Thin Film Fabricated Using RF and DC Magnetron Sputtering

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.268.229 ◽

2017 ◽

Vol 268 ◽

pp. 229-233

Author(s):

A.R. Nurhamizah ◽

Zuhairi Ibrahim ◽

Rosnita Muhammad ◽

Yussof Wahab ◽

Samsudi Sakrani

Keyword(s):

Thin Film ◽

Thin Films ◽

Magnetron Sputtering ◽

Annealing Temperature ◽

X Ray Diffraction ◽

Dc Magnetron Sputtering ◽

X Ray ◽

Post Annealing ◽

Two Temperatures ◽

Platinum Thin Film

This research aims to study the growth and the effect of annealing temperature on the structural properties of Platinum/YSZ/Platinum thin film. The thin films were prepared by RF and DC magnetron sputtering method utilized platinum as electrodes (anode and cathode) and YSZ as electrolyte. Two temperatures of annealing (400 and 600 °C) were conducted onto Platinum/YSZ/Platinum thin film for comparison in this study. Crystalline phase, microstructure and thickness of thin films were evaluated using X-Ray Diffraction (XRD) and Field Emission Scanning Electron Microscope (FE-SEM) technique. Results show that Pt/YSZ/Pt thin film without post-annealing gives a better morphology and crystal phase.

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Effect of Post-Deposition Annealing Process on the Resistive Switching Behaviour of TiO2 Thin Films by Sol-Gel Method

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.925.125 ◽

2014 ◽

Vol 925 ◽

pp. 125-129 ◽

Cited By ~ 7

Author(s):

Nur Syahirah Kamarozaman ◽

Mohd Firdaus Mohamed Soder ◽

Mohamed Zahidi Musa ◽

Raudah A. Bakar ◽

Wan Fazlida Hanim Abdullah ◽

...

Keyword(s):

Thin Films ◽

Annealing Temperature ◽

Sol Gel ◽

Annealing Process ◽

Device Performance ◽

Post Deposition Annealing ◽

Post Annealing ◽

Switching Behaviour ◽

Post Deposition ◽

Physical Thickness

The paper presents the memristive behaviour of spin-coated titania thin films on ITO substrate. The sample was annealed in air ambient at different annealing temperature and duration of 250 and 450 °C for 20 and 60 min. The effect of post-annealing process to the physical thickness and crystallinity of the films towards switching behaviour was studied. It was found that the thickness and crystallinity of the films increases as the post annealing process increases. Sample annealed at 250 °C for 20 min with thinner film showed better switching behaviour even though the sample is still in amorphous form. Thus, in our work, we believed that the crystallinity of the films does not affect the switching behaviour of the sample. The reliability of device performance was studied by repeating the measurement for three times.

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Novel Cu-Mg-Ni-Zn-Mn Oxide Thin Film Electrodes for NIR Photodetector Applications

Journal of Materials Chemistry C ◽

10.1039/d0tc06117d ◽

2021 ◽

Author(s):

Tzu-Hsuan Wang ◽

Chia-Tung Kuo ◽

Pin-Hung Chung ◽

Chao-I Liu ◽

You-Yan Lu ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Oxide Thin Film ◽

Oxide Thin Films ◽

Mn Oxide ◽

Post Annealing ◽

Narrow Bandgap ◽

Thin Film Electrodes

This study reports the optical and photoconductive characteristics of the Cu-Mg-Ni-Zn-Mn oxide thin films with and without post-annealing in air. The Cu-Mg-Ni-Zn-Mn oxide thin films reveal a narrow bandgap of...

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Properties of RF Magnetron-Sputtered Copper Gallium Oxide (CuGa2O4) Thin Films

Coatings ◽

10.3390/coatings11080921 ◽

2021 ◽

Vol 11 (8) ◽

pp. 921

Author(s):

Ashwin Kumar Saikumar ◽

Sreeram Sundaresh ◽

Shraddha Dhanraj Nehate ◽

Kalpathy B. Sundaram

Keyword(s):

Thin Films ◽

Annealing Temperature ◽

Wavelength Region ◽

Rf Magnetron Sputtering ◽

Xrd Analysis ◽

X Ray Diffraction ◽

Morphological Studies ◽

Increasing Trend ◽

First Time ◽

Post Deposition

Thin films of CuGa2O4 were deposited using an RF magnetron-sputtering technique for the first time. The sputtered CuGa2O4 thin films were post-deposition annealed at temperatures varying from 100 to 900 °C in a constant O2 ambience for 1.5 h. Structural and morphological studies were performed on the films using X-ray diffraction analysis (XRD) and a Field Emission Scanning Electron Microscope (FESEM). The presence of CuGa2O4 phases along with the CuO phases was confirmed from the XRD analysis. The minimum critical temperature required to promote the crystal growth in the films was identified to be 500 °C using XRD analysis. The FESEM images showed an increase in the grain size with an increase in the annealing temperature. The resistivity values of the films were calculated to range between 6.47 × 103 and 2.5 × 108 Ωcm. Optical studies were performed on all of the films using a UV-Vis spectrophotometer. The optical transmission in the 200–800 nm wavelength region was noted to decrease with an increase in the annealing temperature. The optical bandgap value was recorded to range between 3.59 and 4.5 eV and showed an increasing trend with an increase in the annealing temperature.

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Annealing effects on optical and structural properties of chromium oxide thin film deposited by PLD technique

Iraqi Journal of Physics (IJP) ◽

10.30723/ijp.v16i38.7 ◽

2018 ◽

Vol 16 (38) ◽

pp. 35-41

Author(s):

Fuad T. Ibrahim

Keyword(s):

Thin Films ◽

Absorption Coefficient ◽

Chromium Oxide ◽

Annealing Temperature ◽

Laser Energy ◽

Oxide Thin Film ◽

Pulse Laser Deposition Method ◽

X Ray Diffraction ◽

Glass Substrates ◽

Annealing Effects

Optical properties of chromium oxide (Cr2O3) thin films which were prepared by pulse laser deposition method, onto glass substrates. Different laser energy (500-900) mJ were used to obtain Cr2O3 thin films with thickness ranging from 177.3 to 372.4 nm were measured using Tolansky method. Then films were annealed at temperature equal to 300 °C. Absorption spectra were used to determine the absorption coefficient of the films, and the effects of the annealing temperature on the absorption coefficient were investigated. The absorption edge shifted to red range of wavelength, and the optical constants of Cr2O3 films increases as the annealing temperature increased to 300 °C. X-ray diffraction (XRD) study reveals that Cr2O3 thin films are amorphous; while the crystal structure of annealed Cr2O3 films is rhombohedral after annealing at 300 °C for two hour. AFM studies of Cr2O3 thin films exhibit a smooth and well dispersed on the surface.

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An eﬀect of rapid post-annealing temperature on the properties of cupric oxide thin films deposited by a remote plasma sputtering technique

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2021.106227 ◽

2022 ◽

Vol 137 ◽

pp. 106227

Author(s):

Xianle Zhang ◽

Zhenzhen Li ◽

Jiajie Fan

Keyword(s):

Thin Films ◽

Annealing Temperature ◽

Cupric Oxide ◽

Oxide Thin Films ◽

Remote Plasma ◽

Plasma Sputtering ◽

Post Annealing ◽

Post Annealing Temperature

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NANOCRYSTALLINE TIN OXIDE THIN FILM AS A LOW LEVEL H2S GAS SENSOR

International Journal of Nanoscience ◽

10.1142/s0219581x11009398 ◽

2011 ◽

Vol 10 (04n05) ◽

pp. 1137-1141 ◽

Cited By ~ 1

Author(s):

GANESH E. PATIL ◽

D. D. KAJALE ◽

G. H. JAIN ◽

S. D. SHINDE ◽

V. B. GAIKWAD

Keyword(s):

Thin Films ◽

Tin Oxide ◽

Annealing Temperature ◽

Gas Sensing ◽

Operating Temperature ◽

Spray Pyrolysis Technique ◽

Maximum Sensitivity ◽

Oxide Thin Film ◽

Optical Absorption Spectroscopy ◽

Oxide Thin Films

Tin oxide thin films were deposited on alumina substrates at 350°C by spray pyrolysis technique. The films were studied after annealing them in air at different temperatures 550°C, 750°C and 950°C for 30 min. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and optical absorption spectroscopy technique. The grain size was observed to be increased, ranging from 40 to 56.1 nm, with the increase in annealing temperature. Absorbance spectra were taken to examine the optical properties. The band gap energy was observed to be decreased with the increase in annealing temperature. These films were tested to various gases at different operating temperature ranging from 50°C to 450°C. The Tin Oxide film showed maximum sensitivity to H2S gas. The H2S sensing property of the SnO2 films was investigated with different annealing temperatures of the films and at different concentrations of H2S gas. It was found that the annealing temperature of the film significantly affects the sensitivity of the SnO2 to the H2S gas. The maximum sensitivity was found in case of the film annealed at temperature 950°C at the operating temperature 100°C. The sensitivity was found to be increased by 24% in case of the film annealed at 950°C as compared to the sensitivity of the film annealed at 550°C. The observed response of the film was for gas concentration of 10 ppm for H2S with reasonable sensitivity. The quick response and fast recovery are the main features of this film. The effect of annealing temperature on the structural, microstructural, optical and gas sensing properties of the nanocrystalline tin oxide thin films were studied and discussed.

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Structural and tribological properties of tungsten oxide thin film on a silicon substrate

Journal of Chemical Research ◽

10.1177/1747519820923100 ◽

2020 ◽

Vol 44 (11-12) ◽

pp. 744-749

Author(s):

Siamak Ziakhodadadian ◽

Tianhui Ren

Keyword(s):

Thin Film ◽

Thin Films ◽

Substrate Temperature ◽

Tungsten Oxide ◽

Oxide Thin Film ◽

X Ray Diffraction ◽

Oxide Thin Films ◽

X Ray ◽

Tungsten Oxide Thin Films ◽

Scanning Electron

In this work, tungsten oxide thin films are deposited on silicon substrates using the hot filament chemical vapor deposition system. The influence of substrate temperature on the structural, morphological, and elemental composition of the tungsten oxide thin films is investigated using X-ray diffraction, field-emission scanning electron microscopy, and X-ray photoelectron spectroscopy techniques. Also, the mechanical and tribological properties of these thin films are considered using nanoindentation and scratch tests. Based on X-ray diffraction results, it can be concluded that tungsten oxide thin films are synthesized with a cubic WO3 structure. From field-emission scanning electron microscopy images, it can be seen that tungsten oxide thin films are made of crystal clusters which have grown vertically on the substrate surface. In addition, the results exhibit two asymmetric W4d5/2 and W4d7/2 peaks which can be assigned to W5+ and W4+ species, respectively. The mechanical results show that the hardness and the elastic modulus increase on raising the substrate temperature up to 600 °C. From the tribological performances, the friction coefficient of the tungsten oxide thin film decreases on increasing the substrate temperature.

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