Anomalous Conduction between the Band and Nearest-Neighbor Hopping Conduction Regions in Heavily Al-Doped p-Type 4H-SiC

We measure the temperature-dependent resistivity (ρ(T)) for thick heavily Al- and Ncodoped p-type 4H-SiC samples grown by chemical vapor deposition (CVD), physical vapor transport (PVT), and solution growth (SG), and investigate their conduction mechanisms. For samples with an Al concentration (CAl) of 3.5×1019 to 1×1020 cm-3 grown by CVD, PVT, and SG, the conduction mechanisms at high and low temperatures are band and nearest-neighbor hopping (NNH) conduction, respectively. In the range CAl of 1×1019 to 3.5×1019 cm-3, on the other hand, an anomalous conduction, referred to as X conduction here, is observed between the band and NNH conduction regions for the samples grown by CVD and PVT, but not those grown by SG. One of the differences between the samples grown by CVD and PVT and those grown by SG is the off-orientation toward [11-20] of the (0001) 4H-SiC substrate. We discuss the reason for the appearance of X conduction, which appears to be consistent with dopant-concentration inhomogeneity model.