Effects of N2O Anneal on Channel Mobility of 4H-SiC MOSFET and Gate Oxide Reliability
2005 ◽
Vol 483-485
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pp. 697-700
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Keyword(s):
The effect of N2O anneal on channel mobility of inversion-type 4H-SiC n-channel MOSFET has been systematically investigated. It is found that the mobility increases with increasing anneal temperature from 900 to 1150°C. The highest field effect mobility of 30 cm2/Vs is achieved by 1150°C anneal for 3 h, which is about 20 times higher than that for non-annealed MOSFET. In order to investigate the oxide reliability, TDDB measurement has been performed on SiO2 grown on n-type 4H-SiC. The oxide lifetime is found to be drastically improved by N2O anneal.
2008 ◽
Vol 600-603
◽
pp. 791-794
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2009 ◽
Vol 615-617
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pp. 773-776
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2005 ◽
Vol 483-485
◽
pp. 837-840
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2016 ◽
Vol 858
◽
pp. 671-676
◽
2006 ◽
Vol 527-529
◽
pp. 1063-1066
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2005 ◽
pp. 833-836
2005 ◽
Vol 26
(2)
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pp. 96-98
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Keyword(s):
2013 ◽
Vol 740-742
◽
pp. 703-706