Effect of Zr Addition on Magnetostriction of Tb-Dy-Fe Alloys Prepared by Micro-Pulling-Down Method

2014 ◽  
Vol 783-786 ◽  
pp. 2497-2502
Author(s):  
Katsunari Oikawa ◽  
Tetsuo Shoji ◽  
Koichi Anzai
Keyword(s):  
Annealing Time ◽  
Annealing Temperature ◽  
Longitudinal Direction ◽  
Growth Direction ◽  
Saturation Magnetostriction ◽  
Sensors And Actuators ◽  
Zr Addition ◽  
Chemical Segregation ◽  
Fe Alloys ◽  
Crystal Fibers

Effects of Zr addition and annealing on the magnetostriction of Tb-Dy-Fe alloy crystals were investigated. The (Fe1.9Tb0.27Dy0.73)1-xZrx (x: 0, 0.0125, 0.025, 0.05, 0.075) crystal fibers about 2 mm in diameter were grown by the micro-pulling-down (μ-PD) method. The grown crystals showed the low chemical segregation along longitudinal direction and the growth direction was oriented in the <311> direction. The saturation magnetostriction of the fiber increases with increasing the Zr content, annealing temperature and annealing time. The fiber-shape Tb-Dy-Fe crystals prepared by the μ-PD method are promising for the applications as sensors and actuators.

About the Electrical Activation of 1×1020 cm-3 Ion Implanted Al in 4H-SiC at Annealing Temperatures in the Range 1500 - 1950°C

2018 ◽  
Vol 924 ◽  
pp. 333-338 ◽  
Author(s):  
Roberta Nipoti ◽  
Alberto Carnera ◽  
Giovanni Alfieri ◽  
Lukas Kranz
Keyword(s):  
Activation Energy ◽  
Sheet Resistance ◽  
Annealing Time ◽  
Thermal Activation ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Thermal Activation Energy ◽  
Electrical Activation ◽  
Temperature Range ◽  
Annealing Temperatures

The electrical activation of 1×1020cm-3implanted Al in 4H-SiC has been studied in the temperature range 1500 - 1950 °C by the analysis of the sheet resistance of the Al implanted layers, as measured at room temperature. The minimum annealing time for reaching stationary electrical at fixed annealing temperature has been found. The samples with stationary electrical activation have been used to estimate the thermal activation energy for the electrical activation of the implanted Al.

Effect of Homogenization Annealing on Wear Properties of Thixo-Extrued Copper Alloy

2022 ◽  
Vol 327 ◽  
pp. 71-81
Author(s):  
Yun Xin Cui ◽  
Han Xiao ◽  
Chi Xiong ◽  
Rong Feng Zhou ◽  
Zu Lai Li ◽  
...  
Keyword(s):  
Friction Factor ◽  
Annealing Time ◽  
Copper Alloy ◽  
Loss Rate ◽  
Annealing Temperature ◽  
Brinell Hardness ◽  
Annealing Process ◽  
Wear Properties ◽  
Wear Performance ◽  
Semi Solid

The semi-solid extruded CuSn10P1 alloy bushings were homogenization annealed. The effects of annealing process on the hardness and wear properties of bushings were researched. The results show the Brinell hardness increases firstly and then decreases with the increase of annealing temperature and annealing time. With the annealing temperature increasing, the grinding loss rate and friction factor decrease firstly and then increase. At the annealing time of 120 min, the grinding loss rate decreases from 7% at the annealing temperature of 450 °C to 6% at 500 °C, and then increases from 6% at 500 °C to 12% at 600 °C. The friction factor decreases from 0.54 to 0.48 and then increases to 0.83. At the annealing temperature of 500 °C, the grinding loss rate decreases from 11% at the annealing time of 60 min to 6% at 120 min, and then increases to 15% at 150 min. The friction factor decreases from 0.67 to 0.48 and then increases to 0.72. The best wear performance and Brinell hardness can be obtained at annealing temperature of 500 °C for 120 min.

First Paper: The Effect of Heat Treatment on the Ductility of Alloy Steel Wires in a Cold Heading Process

1969 ◽  
Vol 184 (1) ◽  
pp. 875-884 ◽  
Author(s):  
P. F. Thomason
Keyword(s):  
Heat Treatment ◽  
Annealing Time ◽  
Annealing Temperature ◽  
Steel Wire ◽  
Groove Depth ◽  
Air Cooling ◽  
Steel Wires ◽  
Fracture Crack ◽  
Different Types ◽  
Process Annealing

Longitudinal grooves of various depths ranging from 0.001 in to 0.011 in were machined on the cylindrical surface of steel slugs prior to carrying out an automatic two-stage transfer heading operation. The longitudinal grooves were used to estimate the ‘critical groove depth’, which was defined as the depth of longitudinal groove that contained a ductile fracture crack just on the point of ‘opening out’ at the end of the heading process, thus giving a measure of the ductility of the wire. A half-replicate of a two-level factorial experiment was carried out to assess the effects and interactions of annealing temperature, annealing time, cooling rate and ageing temperature on the ductility of four different types of 1/2 in diameter cold heading steel wire. The results show that certain types of steel wires have optimum ductility in the ‘as-received’, cold-drawn, state. Other types of steel are shown to respond favourably to process annealing treatments, in which case annealing at 700°C for 1 hour followed by air cooling should give optimum ductility. It is shown that there is no general correlation between decreasing hardness and increasing ductility for steel wire.

Study of Donor Centres in n-InSb due to the Temperature Annealing

2005 ◽  
Vol 480-481 ◽  
pp. 197-200
Author(s):  
Y. Sayad ◽  
A. Nouiri
Keyword(s):  
Experimental Data ◽  
Activation Energy ◽  
Annealing Time ◽  
Annealing Temperature ◽  
Theoretical Study ◽  
Donor Concentration ◽  
Model Based ◽  
Proposed Model ◽  
Kinetics Of ◽  
Best Fit

An increasing of donor centres has been detected in n-InSb when it was submitted to anneal/quench with various annealing temperature (450 °C - 850 °C) and various annealing time (5 - 100 hours). A theoretical study of the kinetics of the conduction conversion of n-InSb at temperature annealing above 250 °C has been made. The present analysis indicates that the donor concentration increases with increasing of annealing time. In order to study this variation and to give a model for donor centres generated, a proposed model based on the simple kinetic is used to fit the variation of donor concentration as a function of annealing time. However, from the best fit of experimental data using the proposed model, the activation energy is determined.

The Ten-Fold Surface of The Decagonal Al72Ni11Co17 Quasicrystal Studied by Leed, Spa-Leed, Aes and Stm.

2000 ◽  
Vol 643 ◽  
Author(s):  
Erik J. Cox ◽  
Julian Ledieu ◽  
RÓn'n Mcgrath ◽  
Renee D. Diehl ◽  
Cynthia J. Jenks ◽  
...  
Keyword(s):  
Annealing Time ◽  
Electron Spectroscopy ◽  
Annealing Temperature ◽  
Profile Analysis ◽  
Low Energy Electron Diffraction ◽  
Annealing Temperatures ◽  
Scanning Tunnelling ◽  
Tunnelling Microscopy ◽  
Low Energy Electron ◽  
Stm Images

AbstractThe ten-fold surface of the decagonal Al72Ni11Co17 (d-Al-Ni-Co) quasicrystal has been investigated using low energy electron diffraction (LEED), spot profile analysis LEED (SPA- LEED), Auger electron spectroscopy (AES) and scanning tunnelling microscopy (STM). This was done as a function of both annealing temperature and annealing time. The long-range order of the surface, as indicated by LEED, increases both as a function of annealing time and temperature. STM shows the surface to be rough and cluster-like at low annealing temperatures (≤725 K), whilst annealing to temperatures in excess of 725 K results in the formation of terraces. These terraces are small (≤ 100 Å width) at lower annealing temperatures and increase in size (100 Å ≤ x ≤ 500 Å) as the annealing temperature is increased (≥ 850 K). They are characterised by the presence of three-fold protrusions which align preferentially. STM images show single height steps as expected due to the periodicity of d-Al-Ni-Co in the z direction. To date it has not been possible to obtain atomic resolution, although this work is continuing.

STRUCTURAL AND OPTICAL CHARACTERIZATION OF ZnO SINGLE CRYSTALLINE NANOBAMBOOS

2005 ◽  
Vol 19 (15n17) ◽  
pp. 2804-2810 ◽  
Author(s):  
LEI MIAO ◽  
SAKAE TANEMURA ◽  
YASUHIKO HAYASHI ◽  
MASAKI TANEMURA ◽  
RONGPING WANG ◽  
...  
Keyword(s):  
Room Temperature ◽  
Annealing Temperature ◽  
Optical Characterization ◽  
Growth Direction ◽  
Annealed Sample ◽  
Green Band ◽  
Post Annealing ◽  
High Resolution Tem ◽  
Post Annealing Temperature

ZnO nanobamboos and nanowires with diameters of 10–30 nm and lengths of 2–4 μm have been prepared by laser ablation in vacuum with precisely controlled pressure, growth and post-annealing temperature. XRD results show the annealed sample is hexagonal ZnO . Low-magnified TEM observation reveals the annealed sample includes ZnO nanobamboos and nanowires. High resolution TEM image and electron diffraction pattern confirm that the structure of ZnO nanobamboo is regular stacking of Zn and O layers with high crystal quality. The growth direction is determined as along [001] direction (c axis). TEM observations confirm that the formation of bamboo-shape ZnO is due to the stacking fault and cleavage. The bundle of those stacking faults seems to be the origin of the black contrast at the nodes. The uniformity of chemical composition for the nanobamboos is identified by EDS profiles. A strong-narrow UV band centred at 390 nm and a weak-broad green band centred at 515 nm are observed at room temperature in the PL spectrum recorded from the annealed ZnO nanobamboos and nanowires.

Structural Analysis of Rf Sputtered Er Doped Ta2O5 Films

2010 ◽  
Vol 459 ◽  
pp. 32-37 ◽  
Author(s):  
Jaspal Parganram Bange ◽  
Mayank Kumar Singh ◽  
Kazusa Kano ◽  
Kenta Miura ◽  
Osamu Hanaizumi
Keyword(s):  
Thin Films ◽  
Structural Analysis ◽  
Structural Properties ◽  
Annealing Time ◽  
Annealing Temperature ◽  
Hexagonal Phase ◽  
Rf Sputtering ◽  
Amorphous Nature ◽  
Crystalline Nature ◽  
Er Doped

Thin films of Er-doped Ta2O5 have been synthesized by RF sputtering. The influence of annealing temperature, number of Er tablets and annealing time on the structural properties of grown films, has been studied. The samples annealed bellow 800°C show amorphous nature. However, the sample annealed at 800°C and above shows crystalline nature of the film with β–Ta2O5 (orthorhombic) and δ–Ta2O5 (hexagonal) phase. The crystalline structure of the film is disturbed with the increase in Er concentration.

keV- and MeV- Ion Beam Synthesis of Buried SiC Layers in Silicon

1994 ◽  
Vol 354 ◽  
Author(s):  
J.K.N. Lindner ◽  
A. Frohnwieser ◽  
B. Rauschenbach ◽  
B. Stritzker
Keyword(s):  
Ion Implantation ◽  
Annealing Time ◽  
Annealing Temperature ◽  
Ion Beam ◽  
High Dose ◽  
Layer Formation ◽  
Substrate Orientation ◽  
Ion Beam Synthesis ◽  
Buried Layers ◽  
Precipitate Layer

AbstractHomogenous, epitaxial buried layers of 3C-SÍC have been formed in Si(100) and Si(lll) by ion beam synthesis (IBS) using 180 keV high dose C ion implantation. It is shown that an annealing temperature of 1250 °C and annealing times of 5 to 10 h are sufficient to achieve well-defined Si/SiC/Si layer systems with abrupt interfaces. The influence of dose, annealing time and temperature on the layer formation is studied. The favourable dose is observed to be dependent on the substrate orientation. IBS using 0.8 MeV C ions resulted in a buried SiC precipitate layer of variable composition.

Annealing Time Influence on Optical Characteristic of Beta-FeSi2 Thin Film

2015 ◽  
Vol 1096 ◽  
pp. 62-68
Author(s):  
Xi Cheng Xiong ◽  
Shuang Shuang Kang ◽  
Qian Chen ◽  
Jin Huang ◽  
Quan Xie ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Magnetron Sputtering ◽  
Direct Current ◽  
Annealing Time ◽  
Optical Characteristic ◽  
Annealing Temperature ◽  
Si Substrate ◽  
Direct Current Magnetron Sputtering ◽  
Digital Microscope

In this paper, we have prepared the beta-FeSi2 thin film on Si substrate through the direct current magnetron sputtering technology. We have tested the samples by XRD, optical digital microscope (ODM), spectrophotometer, and SEM. Under the same annealing temperature at 1153 K, the annealing time has important influence on the optical characteristic of beta-FeSi2 thin film. More the thickness of the beta-FeSi2 thin film is thinner, and more the absorptivity of photo is higher. We should use the thinner beta-FeSi2 thin film with appropriate value of the thickness and must adopt the anti-reflection layer to fabricate the solar cell.

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