Temperature-Dependent Characteristics of 4H-SiC Buried Grid JBS Diodes

2015 ◽  
Vol 821-823 ◽  
pp. 600-603 ◽  
Author(s):  
Jang Kwon Lim ◽  
S.A. Reshanov ◽  
Wlodek Kaplan ◽  
A. Zhang ◽  
Tomas Hjort ◽  
...  
Keyword(s):  
Leakage Current ◽  
Doping Concentration ◽  
Voltage Drop ◽  
Schottky Contact ◽  
Drift Region ◽  
Forward Voltage ◽  
Forward Voltage Drop ◽  
Increasing Temperature ◽  
P Type ◽  
State Resistance

4H-SiC Schottky Barrier Diodes (SBD) have been developed using p-type buried grids (BGs) formed by Al implantation. In order to reduce on-state resistance and improve forward conduction, the doping concentration of the channel region between the buried grids was increased. The fabricated diodes were encapsulated with TO-254 packages and electrically evaluated. Experimental forward and reverse characteristics were measured in the temperature range from 25 °C to 250 °C. On bare die level, the forward voltage drop was reduced from 5.36 V to 3.90 V at 20 A as the channel doping concentration was increased, which introduced a low channel resistance. By the encapsulation in TO-254 package, the forward voltage drop was decreased approximately 10% due to a lower contact resistance. The on-state resistance of the identical device measured on bare die and in TO-254 package increased with increasing temperature due to the decreased electron mobility in the drift region resulting in higher resistance. The incremental contact resistances of the bare dies were larger than in the packaged devices. One key issue associated with conventional Junction Barrier Schottky (JBS) diodes is a high leakage current at high temperature operation over 200 °C. The developed Buried Grid JBS (BG JBS) diode has significantly reduced leakage current due to a better field shielding at the Schottky contact. The leakage current of the packaged BG JBS diodes is compared to pure SBD and commercial JBS diodes.

scholarly journals Mobility Models Based on Forward Current-Voltage Characteristics of P-type Pseudo-Vertical Diamond Schottky Barrier Diodes

Micromachines ◽  
2020 ◽  
Vol 11 (6) ◽  
pp. 598
Author(s):  
Min-Woo Ha ◽  
Ogyun Seok ◽  
Hojun Lee ◽  
Hyun Ho Lee
Keyword(s):  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Doping Concentration ◽  
Voltage Drop ◽  
Mobility Model ◽  
Mobility Models ◽  
Schottky Barrier Diodes ◽  
Forward Voltage ◽  
Forward Voltage Drop ◽  
P Type

Compared with silicon and silicon carbide, diamond has superior material parameters and is therefore suitable for power switching devices. Numerical simulation is important for predicting the electric characteristics of diamond devices before fabrication. Here, we present numerical simulations of p-type diamond pseudo-vertical Schottky barrier diodes using various mobility models. The constant mobility model, based on the parameter μconst, fixed the hole mobility absolutely. The analytic mobility model resulted in temperature- and doping concentration-dependent mobility. An improved model, the Lombard concentration, voltage, and temperature (CVT) mobility model, considered electric field-dependent mobility in addition to temperature and doping concentration. The forward voltage drop at 100 A/cm2 using the analytic and Lombard CVT mobility models was 2.86 and 5.17 V at 300 K, respectively. Finally, we used an empirical mobility model based on experimental results from the literature. We also compared the forward voltage drop and breakdown voltage of the devices, according to variations in p- drift layer thickness and cathode length. The device successfully achieved a low specific on-resistance of 6.8 mΩ∙cm2, a high breakdown voltage of 1190 V, and a high figure-of-merit of 210 MW/cm2.

scholarly journals 10 kV Silicon Carbide PiN Diodes—From Design to Packaged Component Characterization

Energies ◽  
2019 ◽  
Vol 12 (23) ◽  
pp. 4566 ◽  
Author(s):  
Asllani ◽  
Morel ◽  
Phung ◽  
Planson
Keyword(s):  
Silicon Carbide ◽  
Leakage Current ◽  
Voltage Drop ◽  
Forward Bias ◽  
Forward Voltage ◽  
Pin Diodes ◽  
Pulse Switching ◽  
Turn On ◽  
Forward Voltage Drop ◽  
Fabrication And Characterization

This paper presents the design, fabrication and characterization results obtained on the last generation (third run) of SiC 10 kV PiN diodes from SuperGrid Institute. In forward bias, the 59 mm2 diodes were tested up to 100 A. These devices withstand voltages up to 12 kV on wafer (before dicing, packaging) and show a low forward voltage drop at 80 A. The influence of the temperature from 25 °C to 125 °C has been assessed and shows that resistivity modulation occurs in the whole temperature range. Leakage current at 3 kV increases with temperature, while being three orders of magnitude lower than those of equivalent Si diodes. Double-pulse switching tests reveal the 10 kV SiC PiN diode’s outstanding performance. Turn-on dV/dt and di/dt are −32 V/ns and 311 A/µs, respectively, whereas turn-off dV/dt and di/dt are 474 V/ns and −4.2 A/ns.

Conductivity Modulated and Implantation-Free 4H-SiC Ultra-High-Voltage PiN Diodes

2018 ◽  
Vol 924 ◽  
pp. 568-572 ◽  
Author(s):  
Arash Salemi ◽  
Hossein Elahipanah ◽  
Carl Mikael Zetterling ◽  
Mikael Östling
Keyword(s):  
Leakage Current ◽  
High Voltage ◽  
Voltage Drop ◽  
Device Simulation ◽  
Forward Voltage ◽  
Pin Diodes ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Forward Voltage Drop ◽  
Ultra High Voltage

Implantation-free mesa etched ultra-high-voltage 4H-SiC PiN diodes are fabricated, measured and analyzed by device simulation. The diode’s design allows a high breakdown voltage of about 19.3 kV according to simulations. No reverse breakdown is observed up to 13 kV with a very low leakage current of 0.1 μA. A forward voltage drop (VF) and differential on-resistance (Diff. Ron) of 9.1 V and 41.4 mΩ cm2are measured at 100 A/cm2, respectively, indicating the effect of conductivity modulation.

scholarly journals Gate Current and Snapback of 4H-SiC Thyristors on N+ Substrate for Power-Switching Applications

Electronics ◽  
2020 ◽  
Vol 9 (2) ◽  
pp. 332
Author(s):  
Hojun Lee ◽  
Ogyun Seok ◽  
Taeeun Kim ◽  
Min-Woo Ha
Keyword(s):  
Numerical Simulation ◽  
Breakdown Voltage ◽  
Doping Concentration ◽  
Voltage Drop ◽  
Depletion Region ◽  
Drift Region ◽  
Power Switching ◽  
Gate Current ◽  
High Voltage Direct Current ◽  
Forward Voltage Drop

High-power switching applications, such as thyristor valves in a high-voltage direct current converter, can use 4H-SiC. The numerical simulation of the 4H-SiC devices requires specialized models and parameters. Here, we present a numerical simulation of the 4H-SiC thyristor on an N+ substrate gate current during the turn-on process. The base-emitter current of the PNP bipolar junction transistor (BJT) flow by adjusting the gate potential. This current eventually activated a regenerative action of the thyristor. The increase of the gate current from P+ anode to N+ gate also decreased the snapback voltage and forward voltage drop (Vf). When the doping concentration of the P-drift region increased, Vf decreased due to the reduced resistance of a low P-drift doping. An increase in the P buffer doping concentration increased Vf owing to enhanced recombination at the base of the NPN BJT. There is a tradeoff between the breakdown voltage and forward characteristics. The breakdown voltage is increased with a decrease in concentration, and an increase in drift layer thickness occurs due to the extended depletion region and reduced peak electric field.

Influence of Trench Design on the Electrical Properties of 650V 4H-SiC JBS Diodes

2019 ◽  
Vol 963 ◽  
pp. 549-552
Author(s):  
Oleg Rusch ◽  
Jonathan Moult ◽  
Tobias Erlbacher
Keyword(s):  
Electrical Properties ◽  
Leakage Current ◽  
Breakdown Voltage ◽  
Voltage Drop ◽  
Electrical Characteristics ◽  
Electrical Field ◽  
Forward Voltage ◽  
Voltage Drops ◽  
Forward Voltage Drop ◽  
Trench Structure

This work presents a design study of customized p+ arrays having influence on the electrical properties of manufactured 4H-SiC Junction Barrier Schottky (JBS) diodes with designated electrical characteristics of 5 A forward and 650 V blocking capabilities. The effect of the Schottky area consuming p+ grid on the forward voltage drop, the leakage current and therefore the breakdown voltage was investigated. A recessed p+ implantation, realized through trench etching before implanting the bottom of the trenches, results in a more effective shielding of the electrical field at the Schottky interface and therefore reduces the leakage current. Customizing the p+ grid array in combination with the trench structure, various JBS diode variants with active areas of 1.69 mm2 were fabricated whereas forward voltage drops of 1.58 V @ 5 A with blocking capabilities up to 1 kV were achieved.

Comparison of Current – Voltage Characteristics of N and P Type 6H-SiC Schottky Diodes

2000 ◽  
Vol 640 ◽  
Author(s):  
Q. Zhang ◽  
V. Madangarli ◽  
Y. Gao ◽  
T. S. Sudarshan
Keyword(s):  
Schottky Diode ◽  
Room Temperature ◽  
Voltage Drop ◽  
Schottky Diodes ◽  
Reverse Current ◽  
Turn On ◽  
Current Voltage ◽  
Forward Voltage Drop ◽  
P Type ◽  
State Resistance

ABSTRACTForward and reverse current – voltage (I–V) characteristics of N and P-type Schottky diodes on 6H-SiC are compared in a temperature range of room temperature to 550K. While the room temperature I–V characteristics of the N-type Schottky diode after turn-on is more or less linear up to ∼ 100 A/cm2, the I–V characteristics of the P-type Schottky diode shows a non-linear behavior even after turn-on, indicating a variation in the on-state resistance with increase in forward current. For the first time it is shown that at high current densities (> 210 A/cm2) the forward voltage drop across P type Schottky diodes is lower than that across N type Schottky diodes on 6H-SiC. High temperature measurements indicate that while the on-state resistance of N type Schottky diodes increases with increase in temperature, the on-state resistance of P type Schottky diodes decreases with increase in temperature until a certain temperature. While the N-type diodes seem to have soft breakdown characteristics, the P-type diodes exhibit more or less abrupt breakdown characteristics.

Design Optimization of a High Temperature 1.2 kV 4H-SiC Buried Grid JBS Rectifier

2017 ◽  
Vol 897 ◽  
pp. 455-458 ◽  
Author(s):  
Hossein Elahipanah ◽  
Nicolas Thierry-Jebali ◽  
Sergey A. Reshanov ◽  
Wlodek Kaplan ◽  
A. Zhang ◽  
...  
Keyword(s):  
High Temperature ◽  
Leakage Current ◽  
Voltage Drop ◽  
Shielding Effect ◽  
Wafer Level ◽  
Reverse Voltage ◽  
Forward Voltage ◽  
Design Considerations ◽  
Forward Voltage Drop ◽  
High Temperature Operation

1.2 kV SiC buried grid junction barrier Schottky (BG-JBS) diodes are demonstrated. The design considerations for high temperature applications are investigated. The design is optimized in terms of doping concentration and thickness of the epilayers, as well as grid size and spacing dimensions, in order to obtain low on-resistance and reasonable leakage current even at high temperatures. The device behavior at temperatures ranging from 25 to 225ºC is analyzed and measured on wafer level. At 100 A/cm2 a forward voltage drop of 2 V at 25ºC and 3 V at 225ºC is achieved. At reverse voltage of 1 kV, a leakage current density below 0.1 µA/cm2 and below 0.1 mA/cm2 is measured at 25 and 225ºC, respectively. This proves the effective shielding effect of the BG-JBS design and provides benefits in high voltage applications, particularly for high temperature operation.

Development of 1200 V, 3.7 mΩ-cm2 4H-SiC DMOSFETs for Advanced Power Applications

2012 ◽  
Vol 717-720 ◽  
pp. 1059-1064 ◽  
Author(s):  
Sei Hyung Ryu ◽  
Lin Cheng ◽  
Sarit Dhar ◽  
Craig Capell ◽  
Charlotte Jonas ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Room Temperature ◽  
Voltage Drop ◽  
Drain Current ◽  
Subthreshold Swing ◽  
Active Area ◽  
Gate Bias ◽  
Forward Voltage ◽  
Recent Developments ◽  
Forward Voltage Drop

We present our recent developments in 4H-SiC power DMOSFETs. 4H-SiC DMOSFETs with a room temperature specific on-resistance of 3.7 mΩ-cm2 with a gate bias of 20 V, and an avalanche voltage of 1550 V with gate shorted to source, was demonstrated. A threshold voltage of 3.5 V was extracted from the power DMOSFET, and a subthreshold swing of 200 mV/dec was measured. The device was successfully scaled to an active area of 0.4 cm2, and the resulting device showed a drain current of 377 A at a forward voltage drop of 3.8 V at 25oC.

Comparison of the Forward Voltage Drop of Si and SiC High Voltage Diodes

2014 ◽  
Vol 64 (7) ◽  
pp. 223-236 ◽  
Author(s):  
T. Gachovska ◽  
J. L. Hudgins
Keyword(s):  
High Voltage ◽  
Voltage Drop ◽  
Forward Voltage ◽  
Forward Voltage Drop

10 kV, 10 A Bipolar Junction Transistors and Darlington Transistors on 4H-SiC

2010 ◽  
Vol 645-648 ◽  
pp. 1025-1028 ◽  
Author(s):  
Qing Chun Jon Zhang ◽  
Robert Callanan ◽  
Anant K. Agarwal ◽  
Albert A. Burk ◽  
Michael J. O'Loughlin ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Voltage Drop ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Collector Current ◽  
Forward Voltage ◽  
Collector Voltage ◽  
Forward Voltage Drop ◽  
Chip Size ◽  
Dc Current

4H-SiC Bipolar Junction Transistors (BJTs) and hybrid Darlington Transistors with 10 kV/10 A capability have been demonstrated for the first time. The SiC BJT (chip size: 0.75 cm2 with an active area of 0.336 cm2) conducts a collector current of 10 A (~ 30 A/cm2) with a forward voltage drop of 4.0 V (forced current gain βforced: 20) corresponding to a specific on-resistance of ~ 130 mΩ•cm2 at 25°C. The DC current gain, β, at a collector voltage of 15 V is measured to be 28 at a base current of 1 A. Both open emitter breakdown voltage (BVCBO) and open base breakdown voltage (BVCEO) of ~10 kV have been achieved. The 10 kV SiC Darlington transistor pair consists of a 10 A SiC BJT as the output device and a 1 A SiC BJT as the driver. The forward voltage drop of 4.5 V is measured at 10 A of collector current. The DC forced current gain at the collector voltage of 5.0 V was measured to be 440 at room temperature.

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