Growth of Low Resistivity p-Type 4H-SiC Crystals by Sublimation with Using Aluminum and Nitrogen Co-Doping
2016 ◽
Vol 858
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pp. 77-80
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Keyword(s):
P Type
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Low resistivity p-type SiC bulk crystals were grown by the sublimation method with using aluminum and nitrogen co-doping. In the sublimation growth of 4H-SiC, to obtain low-resistive p-type crystals are not easy because of the instability of 4H-SiC polytype with highly Al-doping. We have grown < 90 mΩcm p-type 4H-SiC bulk crystals with the co-doping condition. The results of SIMS and Raman spectroscopy show that high concentration of nitrogen co-doping could be effective to the stabilization of 4H polytype with p-type SiC growth.
2014 ◽
Vol 778-780
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pp. 47-50
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Keyword(s):
2005 ◽
Vol 483-485
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pp. 315-318
Keyword(s):
2007 ◽
Vol 253
(8)
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pp. 3825-3827
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2007 ◽
Vol 556-557
◽
pp. 153-156
2016 ◽
Vol 4
(2)
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pp. 407-415
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Keyword(s):