Comparison of the Structure of AlCrSiN Coating Produced by Planar and Rotating Arc Technology

2019 ◽  
Vol 293 ◽  
pp. 141-153
Author(s):  
Justyna Galeja ◽  
Krzysztof Lukaszkowicz
Keyword(s):  
Surface Engineering ◽  
Sliding Friction ◽  
Wear Resistant Coatings ◽  
Force Microscopy ◽  
Mechanical And Tribological Properties ◽  
Atomic Force ◽  
Transmission Electron ◽  
Nitride Coatings ◽  
Arc Evaporation ◽  
The Relationship

The aim of this work was an attempt to verify two concepts of cathode modules, and the qualification of structure analysis of nitride coatings with the addition of silicon. The analysis covered one of the most commonly used in industrial conditions AlCrSiN coatings manufactured by the planar ARC and rotating (LARC®) technology, which have recently gained more and more recognition in the production of coatings by physical vapour deposition (PVD) technique. Their microstructure was examined using transmission electron microscope (TEM), scanning electron microscopy (SEM), and atomic force microscopy (AFM). Their mechanical and tribological properties were compared in terms of their application in the field of surface engineering. Tribological tests were performed in sliding friction conditions using the ball-on-disc method, where a ceramic Al2O3 ball was used as the counterpart. Presented research results allow to determine the relationship between the structure, wear resistance, and the specific module responsible for the number, type and position of cathodes used in the constitution of the tested coatings. This study complements and contributes to the knowledge on the direct influence of the chemical composition of the coating and the method of its production on the quality and structure of the coated element for wear-resistant coatings produced by PVD in the arc evaporation method (AE).

High-Resolution TEM Observation of 4H-SiC (0001) Surface Planarized by Catalyst-Referred Etching

2012 ◽  
Vol 717-720 ◽  
pp. 873-876 ◽  
Author(s):  
Bui Van Pho ◽  
Shun Sadakuni ◽  
Takeshi Okamoto ◽  
Ryusuke Sagawa ◽  
Kenta Arima ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Care Process ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
High Resolution Tem ◽  
The Relationship

A novel abrasive-free planarization method “called catalyst-referred etching (CARE)” has been invented. After the CARE process, a flat and well-ordered surface is obtained as observed by atomic force microscopy (AFM). To determine the atomic structure at the topmost surface, in this study, CARE-processed surfaces of a standard commercial 2-inch n-type 4H-SiC (0001) wafer cut 8o off-axis toward the [1-100] direction were observed by high-resolution transmission electron microscopy (HRTEM). The HRTEM images showed alternating wide and narrow terraces and a single-bilayer step height. The relationship between the width of the terraces and the 4H-SiC crystal structure has been clarified.

scholarly journals Structural and Mechanical Properties of CrNxCoatings Deposited by Medium-Frequency Magnetron Sputtering with and without Ion Source Assistance

2011 ◽  
Vol 2011 ◽  
pp. 1-7 ◽  
Author(s):  
Can Xin Tian ◽  
Bing Yang ◽  
Jun He ◽  
Hong Jun Wang ◽  
De Jun Fu
Keyword(s):  
Electron Microscopy ◽  
Magnetron Sputtering ◽  
Ion Source ◽  
X Ray Diffraction ◽  
Medium Frequency ◽  
Force Microscopy ◽  
Mechanical And Tribological Properties ◽  
Atomic Force ◽  
Transmission Electron ◽  
Pin On Disc

CrNxcoatings were deposited on Si (100) and WC-Co substrates by a home-made medium-frequency magnetron sputtering system with and without thermal filament ion source assistance. The structure and composition of the coatings were characterized by X-ray diffraction, atomic force microscopy, scanning electron microscopy, and transmission electron microscopy. The mechanical and tribological properties were assessed by microhardness and pin-on-disc testing. The ion source-assisted system showed a deposition rate of 3.88 μm/h, much higher than the value 2.2 μm/h without ion source assistance. The CrNxcoatings prepared with ion source assistance exhibited an increase in microhardness (up to 16.3 GPa) and adecrease in friction coefficient (down to 0.48) at the optimized cathode source-to-substrate distance.

Scanning tunneling microscopy and atomic force microscopy: New tools for biology

1989 ◽  
Vol 47 ◽  
pp. 778-779
Author(s):  
CE Bracker ◽  
P. K. Hansma
Keyword(s):  
Physical Property ◽  
Scanning Probe ◽  
Scanning Tunneling ◽  
Small Scale ◽  
Tunneling Microscopy ◽  
Force Microscopy ◽  
New Family ◽  
Small Probe ◽  
Atomic Force ◽  
Transmission Electron

A new family of scanning probe microscopes has emerged that is opening new horizons for investigating the fine structure of matter. The earliest and best known of these instruments is the scanning tunneling microscope (STM). First published in 1982, the STM earned the 1986 Nobel Prize in Physics for two of its inventors, G. Binnig and H. Rohrer. They shared the prize with E. Ruska for his work that had led to the development of the transmission electron microscope half a century earlier. It seems appropriate that the award embodied this particular blend of the old and the new because it demonstrated to the world a long overdue respect for the enormous contributions electron microscopy has made to the understanding of matter, and at the same time it signalled the dawn of a new age in microscopy. What we are seeing is a revolution in microscopy and a redefinition of the concept of a microscope.Several kinds of scanning probe microscopes now exist, and the number is increasing. What they share in common is a small probe that is scanned over the surface of a specimen and measures a physical property on a very small scale, at or near the surface. Scanning probes can measure temperature, magnetic fields, tunneling currents, voltage, force, and ion currents, among others.

The Electrical Characterization and Physical Failure Analysis for Transistor Gate Leakage

2006 ◽  
Author(s):  
Tsung-Te Li ◽  
Chao-Chi Wu ◽  
Jung-Hsiang Chuang ◽  
Jon C. Lee
Keyword(s):  
Failure Analysis ◽  
Electrical Characterization ◽  
Physical Analysis ◽  
Gate Leakage ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Voltage Stress ◽  
Leakage Site

Abstract This article describes the electrical and physical analysis of gate leakage in nanometer transistors using conducting atomic force microscopy (C-AFM), nano-probing, transmission electron microscopy (TEM), and chemical decoration on simulated overstressed devices. A failure analysis case study involving a soft single bit failure is detailed. Following the nano-probing analysis, TEM cross sectioning of this failing device was performed. A voltage bias was applied to exaggerate the gate leakage site. Following this deliberate voltage overstress, a solution of boiling 10%wt KOH was used to etch decorate the gate leakage site followed by SEM inspection. Different transistor leakage behaviors can be identified with nano-probing measurements and then compared with simulation data for increased confidence in the failure analysis result. Nano-probing can be used to apply voltage stress on a transistor or a leakage path to worsen the weak point and then observe the leakage site easier.

Structural and Optical Properties of InAsSbBi Grown by Molecular Beam Epitaxy on Offcut GaSb Substrates

Photonics ◽  
2021 ◽  
Vol 8 (6) ◽  
pp. 215
Author(s):  
Rajeev R. Kosireddy ◽  
Stephen T. Schaefer ◽  
Marko S. Milosavljevic ◽  
Shane R. Johnson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Quality ◽  
X Ray Diffraction ◽  
Interface Quality ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Lateral Variations

Three InAsSbBi samples are grown by molecular beam epitaxy at 400 °C on GaSb substrates with three different offcuts: (100) on-axis, (100) offcut 1° toward [011], and (100) offcut 4° toward [011]. The samples are investigated using X-ray diffraction, Nomarski optical microscopy, atomic force microscopy, transmission electron microscopy, and photoluminescence spectroscopy. The InAsSbBi layers are 210 nm thick, coherently strained, and show no observable defects. The substrate offcut is not observed to influence the structural and interface quality of the samples. Each sample exhibits small lateral variations in the Bi mole fraction, with the largest variation observed in the on-axis growth. Bismuth rich surface droplet features are observed on all samples. The surface droplets are isotropic on the on-axis sample and elongated along the [011¯] step edges on the 1° and 4° offcut samples. No significant change in optical quality with offcut angle is observed.

Microscopic studies of fast phase transformations in GeSbTe films

2001 ◽  
Vol 674 ◽  
Author(s):  
Ralf Detemple ◽  
Inés Friedrich ◽  
Walter Njoroge ◽  
Ingo Thomas ◽  
Volker Weidenhof ◽  
...  
Keyword(s):  
Phase Transformation ◽  
Data Transfer ◽  
Optical Measurements ◽  
Transfer Rates ◽  
Force Microscopy ◽  
High Data ◽  
Atomic Force ◽  
Transmission Electron ◽  
Future Success ◽  
Microscopic Studies

ABSTRACTVital requirements for the future success of phase change media are high data transfer rates, i.e. fast processes to read, write and erase bits of information. The understanding and optimization of fast transformations is a considerable challenge since the processes only occur on a submicrometer length scale in actual bits. Hence both high temporal and spatial resolution is needed to unravel the essential details of the phase transformation. We employ a combination of fast optical measurements with microscopic analyses using atomic force microscopy (AFM) and transmission electron microscopy (TEM). The AFM measurements exploit the fact that the phase transformation from amorphous to crystalline is accompanied by a 6% volume reduction. This enables a measurement of the vertical and lateral speed of the phase transformation. Several examples will be presented showing the information gained by this combination of techniques.

Defect-Engineered Graded GexSi1-x Buffers on Si (001) with Extreme Low Threading Dislocation Density

1995 ◽  
Vol 378 ◽  
Author(s):  
G. Kissinger ◽  
T. Morgenstern ◽  
G. Morgenstern ◽  
H. B. Erzgräber ◽  
H. Richter
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Atomic Force Microscopy ◽  
Dislocation Density ◽  
Threading Dislocation ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Threading Dislocation Density

AbstractStepwise equilibrated graded GexSii-x (x≤0.2) buffers with threading dislocation densities between 102 and 103 cm−2 on the whole area of 4 inch silicon wafers were grown and studied by transmission electron microscopy, defect etching, atomic force microscopy and photoluminescence spectroscopy.

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