Removal of SOC Hard Mask for Patterning of Work Function Metal by Thermally Activated Ozone Gas

2021 ◽  
Vol 314 ◽  
pp. 127-132
Author(s):  
Shota Iwahata ◽  
Masaki Inaba ◽  
Farid Sebaai ◽  
Efrain Altamirano Sánchez
Keyword(s):  
Substrate Temperature ◽  
Work Function ◽  
Flow Rate ◽  
High Selectivity ◽  
Hard Mask ◽  
Alternative Technology ◽  
Thermally Activated ◽  
Ozone Amount ◽  
Conventional Technology

Thermally activated ozone gas (TAO) was demonstrated as an alternative technology to conventional spin-on carbon (SOC) stripping. The SOC stripping rate with ozone gas was found to be a function of substrate temperature and actual ozone amount calculated from the ozone flow rate and concentration. Furthermore, work function metal (WFM) stripping rate showed a high selectivity to SOC films, and the amount of oxidation TiN, which is a WFM metal, was also equivalent to conventional technology of SOC stripping. This TAO gas process can be used in clean tools, making it a promising integrated solution for SOC stripping followed by post clean.

Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates by Plasma Assisted CVD

2006 ◽  
Vol 527-529 ◽  
pp. 299-302
Author(s):  
Hideki Shimizu ◽  
Yosuke Aoyama
Keyword(s):  
Substrate Temperature ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Deposition Rate ◽  
Crystalline Structure ◽  
Flow Rate ◽  
Silicon Substrates ◽  
High Quality ◽  
Sic Films ◽  
Lower Substrate Temperature

3C-SiC films grown on carbonized Si (100) by plasma-assisted CVD have been investigated with systematic changes in flow rate of monosilane (SiH4) and propane (C3H8) as source gases. The deposition rate of the films increased monotonously and the microstructures of the films changed from 3C-SiC single crystal to 3C-SiC polycrystal with increasing flow rate of SiH4. Increasing C3H8 keeps single crystalline structure but results in contamination of α-W2C, which is a serious problem for the epitaxial growth. To obtain high quality 3C-SiC films, the effects of C3H8 on the microstructures of the films have been investigated by reducing the concentration of C3H8. Good quality 3C-SiC single crystal on Si (100) is grown at low net flow rate of C3H8 and SiH4, while 3C-SiC single crystal on Si (111) is grown at low net flow rate of C3H8 and high net flow rate of SiH4. It is expected that 3C-SiC epitaxial growth on Si (111) will take placed at a higher deposition rate and lower substrate temperature than that on Si (100).

A Sensitive Formaldehyde Sensor Based on Cataluminescence Coupled with Thermal Desorption

2014 ◽  
Vol 670-671 ◽  
pp. 1163-1166 ◽  
Author(s):  
Hong Wei Yang ◽  
Zheng Xing ◽  
Kao Wen Zhou
Keyword(s):  
Detection Limit ◽  
Thermal Desorption ◽  
Flow Rate ◽  
Active Carbon ◽  
Room Temperature ◽  
High Selectivity ◽  
Formaldehyde In Air ◽  
Benzene Toluene ◽  
Versus Concentration

A sensitive cataluminescence-based detecting technology using nanosized Mo4V6Ti10O47 as a probe was proposed for determination of formaldehyde in air. Trace formaldehyde was firstly absorbed on active carbon at room temperature to concentrate, then desorbed at 75°C to determine. The method showed high selectivity to formaldehyde at wavelength of 575nm, satisfying activity at temperature of 260°C and good stability at carrier flow rate of 145 ml/min. The linear range of CTL intensity versus concentration of formaldehyde was 0.04~78 mg/m3, and the detection limit (3σ) was 0.02 mg/m3. The recovery of artificial sample was 96.8%-103.4% by this method. There was no response to CO, CO2, SO2, NH3, methanol, ethanol, benzene, toluene and xylenes.

Highly Transparent and Low Resistivity Al-Doped ZnO Thin Films Grown by Pulsed Laser Deposition under Different Oxygen Flow Rates

2013 ◽  
Vol 662 ◽  
pp. 453-458
Author(s):  
Kyoo Ho Kim ◽  
Eun Soo Lee ◽  
Seong Heon Lee
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Flow Rate ◽  
Pulsed Laser ◽  
Oxygen Flow Rate ◽  
Laser Deposition ◽  
Oxygen Flow ◽  
Low Resistivity ◽  
Doped Zno

Polycrystalline Al-doped ZnO (AZO) thin films with a thickness of 1300 Å were grown on Corning 1737 glass by pulsed laser deposition (PLD) at a low substrate temperature. The presence of oxygen gas during deposition led to a remarkable enhancement of the (002) c-axis preferential orientation as well as increased crystallite size. Highly transparent films with a transmittance of 85% could be obtained by controlling the oxygen flow rate, while causing a Burstein-Moss shift toward a shorter wavelength as well. The resistivities of the films were found to be functions of both the oxygen flow rate and substrate temperature, with the lowest value being 2.3 x 10-4 Ωcm (18Ω/sq sheet resistance). It was found that both the oxygen flow rate and substrate temperature are crucial in order to grow superior device quality films with an appropriate degree of crystallinity, less surface roughness, high transmittance and low resistivity, which are characteristics of great technological importance.

Diesel Active-Flow Aftertreatment Control on a Heated Flow Bench

2010 ◽  
Author(s):  
Marko Jeftic ◽  
Shui Yu ◽  
Xiang Chen ◽  
Xiaohong Xu ◽  
Meiping Wang ◽  
...  
Keyword(s):  
Pressure Drop ◽  
Substrate Temperature ◽  
Flow Rate ◽  
Particulate Filter ◽  
Maximum Temperature ◽  
Lean Nox Trap ◽  
Sudden Increase ◽  
Flow Temperature ◽  
Lean Nox ◽  
Active Flow

Empirical investigations were carried out to explore the influence of parameters such as exhaust flow temperature, exhaust flow rate, and supplemental fuel amount on diesel aftertreatment devices. A heated flow-bench system was utilized in combination with a diesel lean NOx trap (LNT) and/or a diesel particulate filter (DPF). The heated flow bench had the capability of producing stable gas temperatures and pressure drop across these aftertreatment devices. Preliminary pressure drop diagnostics were conducted with unloaded substrates meant for LNT and DPF applications. Subsequently, the DPF was loaded with varying amounts of liquid water or liquid diesel fuel and pressure drop diagnostic tests were repeated to determine if the presence of liquid substances within the substrate could be detected. With the presence of a liquid substance, the DPF exhibited relatively flat and undetectable pressure drop variation up to a critical loading level. Once this level was reached, there was a sharp and sudden increase in pressure drop. Further tests investigated the effects of exhaust flow rate and supplemental fuel amount on raising the LNT substrate temperature as required for the LNT de-NOx regeneration process. The results suggested that the maximum substrate temperature was primarily dependant on the fuel amount. Although the exhaust flow rate had very little effect on the substrate’s maximum temperature, it was significant in determining how quickly the maximum temperature was reached.

Growth of SrS Thin Films by Atomic Layer Epitaxy

1991 ◽  
Vol 222 ◽  
Author(s):  
M. Leskela ◽  
L. Niinistö ◽  
E. Nykänen ◽  
P. Soininen ◽  
M. Tiitta
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Substrate Temperature ◽  
Flow Rate ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Source Temperature ◽  
Large Size ◽  
Monolayer Growth ◽  
Purge Gas

ABSTRACTThe growth of strontium sulfide thin films in a flow-type Atomic Layer Epitaxy reactor from Sr(thd)2 (thd = 2,2,6,6-tetramethyl-3,5-heptanedione) and H2S has been studied. The growth is independent on flow rate and duration of the purge gas (N2) pulse and it does not depend on the Sr(thd)2 and H2S pulses either provided their amounts are sufficient to saturate the surface. The variables significantly affecting the growth rate are the substrate temperature and source temperature for Sr(thd)2. The observed lower than one monolayer growth rate is mainly due to the large size of the Sr(thd)2 molecule.

Reactive Ion Etching of the fluorinated polyimide film

1996 ◽  
Vol 427 ◽  
Author(s):  
Y. K. Lee ◽  
S. P. Murarka
Keyword(s):  
Flow Rate ◽  
Etch Rate ◽  
Gas Flow ◽  
Polyimide Film ◽  
Rf Plasma ◽  
Gas Composition ◽  
Polyimide Films ◽  
Hard Mask ◽  
Fluorinated Polyimide ◽  
Oxygen Gas

AbstractThe etch conditions affecting the etching of the fluorinated polyimide films in RF plasma using oxygen or fluorine-containing oxygen has been investigated. The effect of power, oxygen gas flow rate, and gas composition on the etch rate of fluorinated polyimide have been determined. The etch rate of the fluorinated polyimide increases linearly with the power and oxygen gas flow. The saturation at high oxygen flow rate indicates a saturation or steady state achieved at the polyimide-oxygen reaction interface. However, the etch rate increases when CF4 is added to oxygen, up to about 10% CF4 in O2, and then decreases to a smaller and CF4 concentration independent value. The etch selectivity of hard mask against fluorinated polyimide has been determined. The PECVD silicon nitride and PETEOS are found to be excellent hard mask for pattering these polyimides. The trench profile of the polyimide film also has been examined by patterning and etching the different trench sizes in fluorinated polyimide. It is concluded that this fluorinated polyimide can be etched with oxygen or fluorine containing oxygen plasma.

scholarly journals Al-doped ZnO films deposited by magnetron sputtering: effect of sputtering parameters on the electrical and optical properties

2017 ◽  
Vol 35 (2) ◽  
pp. 374-381 ◽  
Author(s):  
Qingtao Pan ◽  
Xin Song
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Flow Rate ◽  
Near Infrared ◽  
Zno Films ◽  
Infrared Range ◽  
Deposition Pressure ◽  
Small Influence ◽  
Etching Behavior

Abstract Aluminum-doped zinc oxide (AZO) thin films were prepared by magnetron sputtering method. The influences of deposition pressure, substrate temperature, Ar flow rate and film thickness on optical and electrical properties were investigated using ultraviolet-visible (UV-Vis) spectrometer and Hall measurements. The experimental results revealed that a low resistivity, smaller than 4 × 10-4 Ω·cm, was obtained when the deposition pressure was smaller than 0.67 Pa and substrate temperature about 200 °C. Ar flow rate had a small influence on the resistivity but a big influence on the transparency at near infrared range (NIR). We obtained optimized AZO thin films with high ponductivity and transparency at low deposition pressure, small Ar flow and appropriate temperature (around 200 °C). The etching behavior of the AZO thin films deposited at the different Ar flow rates was also studied in this paper. The results show that Ar flow rate is a very important factor affecting the etching behavior.

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