3D Packages with TSV Silicon Interposers

2011 ◽  
Vol 2011 (DPC) ◽  
pp. 000754-000765
Author(s):  
Mike Kelly
Keyword(s):  
Selection Criteria ◽  
High Performance ◽  
Process Development ◽  
Reliability Testing ◽  
Assembly Process ◽  
Materials Selection ◽  
Technical Process ◽  
Development Status ◽  
Silicon Devices ◽  
Fine Pitch

This paper presents the development status overview for large die assembly of 3D packages with TSV bearing silicon interposers and logic devices at Amkor Technology. Combining discrete silicon devices and their attendant functionality onto a silicon interposer has garnered a great deal of interest in the high performance community, driven by considerations such chip to chip bandwidth, lower latency and even lower power. Interposers with silicon fab back-end routing density and new ultra fine pitch copper pillar joining techniques promises to offer a timely performance stepping stone for high performance devices, who in some cases are now finding that the incremental performance benefit from advancing transistor performance alone is less that gratifying. The design motivations and tradeoffs for taking this bold step are reviewed and their influence on assembly technologies. Assembly process and supply chain alternatives to achieve this offering are reviewed and discussed. Technical process development challenges along the way are briefed, as well as the materials selection criteria and reliability testing results.

No Flow Underfill Process Development for Fine Pitch Flip Chip Silicon to Silicon Wafer Level Integration

2010 ◽  
Vol 2010 (DPC) ◽  
pp. 000708-000735 ◽  
Author(s):  
Zhaozhi Li ◽  
John L. Evans ◽  
Paul N. Houston ◽  
Brian J. Lewis ◽  
Daniel F. Baldwin ◽  
...  
Keyword(s):  
High Performance ◽  
Flip Chip ◽  
Process Development ◽  
Low Cost ◽  
Three Dimensional ◽  
High Yield ◽  
Process Time ◽  
Assembly Process ◽  
Wafer Level ◽  
Fine Pitch

The industry has witnessed the adoption of flip chip for its low cost, small form factor, high performance and great I/O flexibility. As the Three Dimensional (3D) packaging technology moves to the forefront, the flip chip to wafer integration, which is also a silicon to silicon assembly, is gaining more and more popularity. Most flip chip packages require underfill to overcome the CTE mismatch between the die and substrate. Although the flip chip to wafer assembly is a silicon to silicon integration, the underfill is necessary to overcome the Z-axis thermal expansion as well as the mechanical impact stresses that occur during shipping and handling. No flow underfill is of special interest for the wafer level flip chip assembly as it can dramatically reduce the process time as well as bring down the average package cost since there is a reduction in the number of process steps and the dispenser and cure oven that would be necessary for the standard capillary underfill process. Chip floating and underfill outgassing are the most problematic issues that are associated with no flow underfill applications. The chip floating is normally associated with the size/thickness of the die and volume of the underfill dispensed. The outgassing of the no flow underfill is often induced by the reflow profile used to form the solder joint. In this paper, both issues will be addressed. A very thin, fine pitch flip chip and 2x2 Wafer Level CSP tiles are used to mimic the assembly process at the wafer level. A chip floating model will be developed in this application to understand the chip floating mechanism and define the optimal no flow underfill volume needed for the process. Different reflow profiles will be studied to reduce the underfill voiding as well as improve the processing yield. The no flow assembly process developed in this paper will help the industry understand better the chip floating and voiding issues regarding the no flow underfill applications. A stable, high yield, fine pitch flip chip no flow underfill assembly process that will be developed will be a very promising wafer level assembly technique in terms of reducing the assembly cost and improving the throughput.

Avoidance of Bonding Pad Contamination Affecting Back-End Assembly Process

2008 ◽  
Author(s):  
Mu-Chun Wang ◽  
Kuo-Shu Huang ◽  
Zhen-Ying Hsieh ◽  
Shuang-Yuan Chen ◽  
Heng-Sheng Huang
Keyword(s):  
High Performance ◽  
Gold Wire ◽  
Assembly Process ◽  
Bond Performance ◽  
Root Cause ◽  
Wire Bond ◽  
Fine Pitch ◽  
Promising Solution ◽  
Adhesion Process

While the process fabrication and the electronic applications develop quickly, the die size and the package type also confront the improvement from the customers’ request to achieve the better signal performance in IC products. In cost consideration and marketing competition, most of commercial IC products still adopt the wire-bond technology, except some high performance products with solder/gold balls adhesion process. For consumer ICs, the gold wire is the major material to connect the IC chip and the lead frame through the bondability technology. In the recent era, the bond pad size and pitch is always shrinking. Therefore, the bond performance strongly depends on wire bond machine to provide lighters, thinner, and more reliable IC. After pad size shrinkage, the quality of pad is more impressed for wire bond reliability, especially in fine-pitch assembly process. It’s a challenge in reliability requirement. In this study, the root cause and promising solution of bond pad contamination were investigated. One is to improve the bonding yield in wire-bond process; the other is to promote the bonding reliability after the whole assembly process.

Ultra Fine Pitch RDL Development in Multi-layer eWLB (embedded Wafer Level BGA) Packages

2015 ◽  
Vol 2015 (1) ◽  
pp. 000822-000826 ◽  
Author(s):  
Won Kyoung Choi ◽  
Duk Ju Na ◽  
Kyaw Oo Aung ◽  
Andy Yong ◽  
Jaesik Lee ◽  
...  
Keyword(s):  
High Performance ◽  
Process Development ◽  
Cost Effective ◽  
Access Point ◽  
Data Access ◽  
Memory Device ◽  
Logic Device ◽  
Wafer Level ◽  
Component Level ◽  
Fine Pitch

The market for portable and mobile data access devices connected to a virtual cloud access point is exploding and driving increased functional convergence as well as increased packaging complexity and sophistication. This is creating unprecedented demand for higher input/output (I/O) density, higher bandwidths and low power consumption in smaller package sizes. There are exciting interconnect technologies in wafer level packaging such as eWLB (embedded Wafer Level Ball Grid Array), 2.5D interposers, thin PoP (Package-on-Package) and TSV (Through Silicon Via) interposer solutions to meet these needs. eWLB technologies with the ability to extend the package size beyond the area of the chip are leading the way to the next level of high density, thin packaging capability. eWLB provides a robust packaging platform supporting very dense interconnection and routing of multiple die in very reliable, low profile, low warpage 2.5D and 3D solutions. The use of these embedded eWLB packages in a side-by-side configuration to replace a stacked package configuration is critical to enable a more cost effective mobile market capability. Combining the analog or memory device with digital logic device in a semiconductor package can provide an optimum solution for achieving the best performance in thin, multiple-die integration aimed at very high performance. This paper highlights the rapidly moving trend towards eWLB packaging technologies with ultra fine 2/2μm line width and line spacing and multi-layer RDL. A package design study, process development and optimization, and mechanical characterization will be discussed as well as test vehicle preparation. JEDEC component level reliability test results will also be presented.

Ultra Fine Pitch RDL Development in Multi-layer eWLB (embedded Wafer Level BGA) Packages

2016 ◽  
Vol 2016 (DPC) ◽  
pp. 000809-000825
Author(s):  
Bernard Adams ◽  
Won Kyung Choi ◽  
Duk Ju Na ◽  
Andy Yong ◽  
Seung Wook Yoon ◽  
...  
Keyword(s):  
Line Width ◽  
High Performance ◽  
Process Development ◽  
Data Access ◽  
Electrical Performance ◽  
Logic Device ◽  
Wafer Level ◽  
Component Level ◽  
Wafer Level Packaging ◽  
Fine Pitch

The market for portable and mobile data access devices connected to a virtual cloud access point is exploding and driving increased functional convergence as well as increased packaging complexity and sophistication. This is creating unprecedented demand for higher input/output (I/O) density, higher bandwidths and low power consumption in smaller package sizes. There are exciting interconnect technologies in wafer level packaging such as eWLB (embedded Wafer Level Ball Grid Array), 2.5D interposers, thin PoP (Package-on-Package) and TSV (Through Silicon Via) interposer solutions to meet these needs. eWLB technologies with the ability to extend the package size beyond the area of the chip are leading the way to the next level of high density, thin packaging capability. eWLB provides a robust packaging platform supporting very dense interconnection and routing of multiple die in very reliable, low profile, low warpage 2.5D and 3D solutions. The use of these embedded eWLB packages in a side-by-side configuration to replace a stacked package configuration is critical to enable a more cost effective mobile market capability. Combining the analog or memory device with digital logic device in a semiconductor package can provide an optimum solution for achieving the best performance in thin, multiple-die integration aimed at very high performance. One of the greatest challenges facing wafer level packaging at present is the availability of routing and interconnecting high I/O fine pitch area array. RDL (redistribution layer) allows signal and supply I/O's to be redistributed to a footprint larger than the chip footprint in eWLB . Required line widths and spacing of 2/2 μm for eWLB applications support the bump pitch of less than 40um. Finer line width and spacing are critical for further design flexibility as well as electrical performance improvement. This paper highlights the rapidly moving trend towards eWLB packaging technologies with ultra fine 2/2um line width and line spacing and multi-layer RDL. A package design study, process development and optimization, and mechanical characterization will be discussed as well as test vehicle preparation. JEDEC component level reliability test results will also be presented.

Assembly Process Development for Fine Pitch Flip Chip Silicon-to-Silicon 3D Wafer Level Integration with No Flow Underfill

2010 ◽  
Vol 7 (3) ◽  
pp. 146-151 ◽  
Author(s):  
Zhaozhi Li ◽  
Sangil Lee ◽  
Brian J. Lewis ◽  
Paul N. Houston ◽  
Daniel F. Baldwin ◽  
...  
Keyword(s):  
High Performance ◽  
Flip Chip ◽  
Process Development ◽  
Low Cost ◽  
Three Dimensional ◽  
Process Time ◽  
Wafer Level ◽  
Fine Pitch ◽  
3D Packaging ◽  
Small Form Factor

The industry has witnessed the adoption of the flip chip for its low cost, small form factor, high performance, and great I/O flexibility. As three-dimensional (3D) packaging technology moves to the forefront, the flip chip to wafer integration, which is also a silicon-to-silicon assembly, is gaining more and more popularity. No flow underfill is of special interest for the wafer level flip chip assembly, as it can dramatically reduce the process time and the cost per package, due to the reduction in the number of process steps as well as the dispenser and cure oven that would otherwise be necessary for the standard capillary underfill process. This paper introduces the development of a no flow underfill process for a sub-100 micron pitch flip chip to CSP wafer level assembly. Challenges addressed include the no flow underfill reflow profile study, underfill dispense amount study, chip floating control, underfill voiding reduction, and yield improvement. Also, different no flow underfill candidates were investigated to determine the best performing processing material.

The Structure and Properties of MoSi2 Thin Film in Mos Process

1980 ◽  
Vol 38 ◽  
pp. 326-327
Author(s):  
C.K. Wu ◽  
P. Chang ◽  
N. Godinho
Keyword(s):  
Thin Film ◽  
Integrated Circuits ◽  
High Performance ◽  
Large Scale ◽  
Process Development ◽  
Structure And Properties ◽  
Metal Silicides ◽  
High Oxidation ◽  
Important Approach ◽  
High Oxidation Resistance

Recently, the use of refractory metal silicides as low resistivity, high temperature and high oxidation resistance gate materials in large scale integrated circuits (LSI) has become an important approach in advanced MOS process development (1). This research is a systematic study on the structure and properties of molybdenum silicide thin film and its applicability to high performance LSI fabrication.

scholarly journals Application of the Deep CNN-Based Method in Industrial System for Wire Marking Identification

Energies ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3659
Author(s):  
Andrzej Szajna ◽  
Mariusz Kostrzewski ◽  
Krzysztof Ciebiera ◽  
Roman Stryjski ◽  
Waldemar Woźniak
Keyword(s):  
Production Process ◽  
Process Development ◽  
Process Time ◽  
Industrial System ◽  
Assembly Process ◽  
Production Environment ◽  
Deep Convolutional Neural Networks ◽  
Control Cabinet ◽  
Production Processes ◽  
The Wire

Industry 4.0, a term invented by Wolfgang Wahlster in Germany, is celebrating its 10th anniversary in 2021. Still, the digitalization of the production environment is one of the hottest topics in the computer science departments at universities and companies. Optimization of production processes or redefinition of the production concepts is meaningful in light of the current industrial and research agendas. Both the mentioned optimization and redefinition are considered in numerous subtopics and technologies. One of the most significant topics in these areas is the newest findings and applications of artificial intelligence (AI)—machine learning (ML) and deep convolutional neural networks (DCNNs). The authors invented a method and device that supports the wiring assembly in the control cabinet production process, namely, the Wire Label Reader (WLR) industrial system. The implementation of this device was a big technical challenge. It required very advanced IT technologies, ML, image recognition, and DCNN as well. This paper focuses on an in-depth description of the underlying methodology of this device, its construction, and foremostly, the assembly industrial processes, through which this device is implemented. It was significant for the authors to validate the usability of the device within mentioned production processes and to express both advantages and challenges connected to such assembly process development. The authors noted that in-depth studies connected to the effects of AI applications in the presented area are sparse. Further, the idea of the WLR device is presented while also including results of DCNN training (with recognition results of 99.7% although challenging conditions), the device implementation in the wire assembly production process, and its users’ opinions. The authors have analyzed how the WLR affects assembly process time and energy consumption, and accordingly, the advantages and challenges of the device. Among the most impressive results of the WLR implementation in the assembly process one can be mentioned—the device ensures significant process time reduction regardless of the number of characters printed on a wire.

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