Simulation and Experiment of Molded Underfill Voids

2012 ◽  
Vol 2012 (1) ◽  
pp. 000359-000365 ◽  
Author(s):  
MyoungSu Chae ◽  
Eric Ouyang ◽  
JaeHan Chung ◽  
DokOk Yu ◽  
SeonMo Gu ◽  
...  

The molded underfill (MUF) has become one of the trends in the IC packaging industry due to its simplification of assembly process steps and the saving of the cost. However, for the fine pitch flip chip bumping array, the void generation is one serious issue causing the short of the electrical connections and the cracking of the bumps. In this paper, the main focus is to predict the void generation and to compare with the experimental data. The early stage FEM numerical simulation not only can predict the risk of voids but also provide the best economic approach without the need to spend trial and error budget. A multiple segments substrate strip, with totally 64 packages populated on it, is used in the experiment. The manufacturing process parameters are programmed and recorded for comparison. The filling, packing, and curing of molding compound are carefully chosen in order to compare their effects. After the assembly process, each package is scanned with C-SAM inspection to check if the voids appear. For FEM numerical simulation, only one segment of the substrate strip, with totally 16 packages, is modeled to save computational resources and time. However, all the bumps, on each of the package, are modeled in order to check how the flow field is affected by the packages. In conclusion, we have obtained good match of experimental vs. simulation data. The prediction of voiding location is very close to each other.

2010 ◽  
Vol 2010 (DPC) ◽  
pp. 000708-000735 ◽  
Author(s):  
Zhaozhi Li ◽  
John L. Evans ◽  
Paul N. Houston ◽  
Brian J. Lewis ◽  
Daniel F. Baldwin ◽  
...  

The industry has witnessed the adoption of flip chip for its low cost, small form factor, high performance and great I/O flexibility. As the Three Dimensional (3D) packaging technology moves to the forefront, the flip chip to wafer integration, which is also a silicon to silicon assembly, is gaining more and more popularity. Most flip chip packages require underfill to overcome the CTE mismatch between the die and substrate. Although the flip chip to wafer assembly is a silicon to silicon integration, the underfill is necessary to overcome the Z-axis thermal expansion as well as the mechanical impact stresses that occur during shipping and handling. No flow underfill is of special interest for the wafer level flip chip assembly as it can dramatically reduce the process time as well as bring down the average package cost since there is a reduction in the number of process steps and the dispenser and cure oven that would be necessary for the standard capillary underfill process. Chip floating and underfill outgassing are the most problematic issues that are associated with no flow underfill applications. The chip floating is normally associated with the size/thickness of the die and volume of the underfill dispensed. The outgassing of the no flow underfill is often induced by the reflow profile used to form the solder joint. In this paper, both issues will be addressed. A very thin, fine pitch flip chip and 2x2 Wafer Level CSP tiles are used to mimic the assembly process at the wafer level. A chip floating model will be developed in this application to understand the chip floating mechanism and define the optimal no flow underfill volume needed for the process. Different reflow profiles will be studied to reduce the underfill voiding as well as improve the processing yield. The no flow assembly process developed in this paper will help the industry understand better the chip floating and voiding issues regarding the no flow underfill applications. A stable, high yield, fine pitch flip chip no flow underfill assembly process that will be developed will be a very promising wafer level assembly technique in terms of reducing the assembly cost and improving the throughput.


2010 ◽  
Vol 2010 (1) ◽  
pp. 000798-000805 ◽  
Author(s):  
Sangil Lee ◽  
Daniel F. Baldwin

The advanced assembly process for a flip chip in package (FCIP) using no-flow underfill material presents challenges with high I/O density (over 3000 I/O) and fine-pitch (down to 150 μm) interconnect applications because it has narrowed the feasible assembly process window for achieving robust interconnect yield. In spite of such challenges, a high yield, nearly void-free assembly process has been achieved in the past research using commercial no-flow underfill material with a high I/O, fine pitch FCIP. The initial void area (approximately 7% ) could cause early failures such solders fatigue cracking or solder bridging in thermal reliability. Therefore, this study reviewed a classical bubble nucleation theory to predict the conditions of underfill void nucleation in the no flow assembly process. Based on the models prediction, systematic experiments were designed to eliminate underfill voiding using parametric studies. First, a void formation study investigated the effect of reflow parameter on underfill voiding and found process conditions of void-free assembly with robust interconnections. Second, a void formation characterization validated the determined reflow conditions to achieve a high yield and void-free assembly process, and the stability of assembly process using a large scale of assemblies respectively. This paper presents systematic studies into void formation study and void formation characterization through the use of structured experimentation which was designed to achieve a high yield, void-free assembly process leveraging a void formation model based on classical bubble nucleation theory. Indeed, the theoretical models were in good agreement with experimental results.


2007 ◽  
Vol 30 (2) ◽  
pp. 359-359
Author(s):  
Robert W. Kay ◽  
Stoyan Stoyanov ◽  
Greg P. Glinski ◽  
Chris Bailey ◽  
Marc P. Y. Desmulliez

Author(s):  
Yukihiko Toyoda ◽  
Yoichiro Kawamura ◽  
Hiroyoshi Hiei ◽  
Qiang Yu ◽  
Tadahiro Shibutani ◽  
...  

High density and integrated packaging of electronic device requires fine pitch. This packaging causes reliability problem in electronic device. One of them, warpage of the package occurred at chip assembly process may affect reliability. Therefore, if the simulation at the time of a chip assembly process is possible, it will be able to evaluate warpage in advance. It is very effective for development of a new product. Then, in this paper, the build-up package is regarded as a single material and the simulation technique of accuracy warpage at the time of chip assembly is reported. Next it is investigated the simulation technique for package warpage at the chip assembly process. Finnaly, it analyzed about the properties which affect warpage.


2007 ◽  
Vol 30 (1) ◽  
pp. 129-136 ◽  
Author(s):  
Robert W. Kay ◽  
Stephen Stoyanov ◽  
Greg P. Glinski ◽  
Chris Bailey ◽  
Marc P. Y. Desmulliez

2016 ◽  
Vol 2016 (DPC) ◽  
pp. 001277-001301
Author(s):  
Tom Strothmann

Thermocompression bonding enables the next generation fine pitch, 2.5D and 3D assembly technologies using Cu pillar interconnects, but to achieve widespread adoption the cost of TCB must become competitive with mass reflow processes. Stacked memory products drive the commercial volume today using TSV structures and TCB since it is the only technology able to achieve the desired stacked die construction and improved performance, but reducing the cost of assembly is still a key goal for those suppliers. In non-memory applications the choice of TCB can be driven by the bump pitch of the device or the requirement to control warpage of large die on laminate during assembly, but cost is still a key factor in the decision. The cost of a TCB process is largely driven by the UPH of the process where cost calculations are based on the cost per unit of material produced. As the UPH of a TCB process approaches 1400, the differential cost of the TCB process as compared to mass reflow becomes negligible. In the choice of a potential TCB process, special attention must be given to those processes that enable the highest UPH and the lowest cost. Processes used for TCB today can be grouped into two main categories; processes that use a pre-applied underfill and those that apply underfill after the bonding process. Underfills applied prior to bonding can be in the form of a non-conductive paste (TC-NCP) applied to a substrate or a non-conductive film applied to the wafer before dicing (TC-NCF). If underfill is applied after the bonding process, it is done as a Capillary Underfill (TC-CUF). In this case the die is underfilled in much the same way as in standard flip chip processes, but the process can be more challenging because of flux cleaning requirements and the narrower bondline of a typical TCB device. UPH is primarily driven by two factors; the range of temperature required by the bond head and the temperature ramp rate of the bond head. A process with less temperature range will have higher UPH and bond heads designed for the fastest cooling and heating rates will provide higher UPH processes. Two process options have been developed to minimize the temperature excursions required by the bond head and maximize the throughput. TC- NCF processes targeting stacked die and interposer products have been developed with throughputs approaching 2000 UPH. Substrate flux TC-CUF processes targeting assembly on laminate have been developed with throughputs that approach 2500 UPH. These two processes are expected to dominate TCB volume production moving forward as TCB enters mainstream production. This presentation will describe the methods used to achieve high throughput for both processes and the product application space appropriate for each one.


The article focuses on the problem of the lack of objective evaluation of space-planning arrangement of buildings as a creative approach of the architect to the performing of functional tasks by the object. It is proposed to create a methodology for assessing the functional of space-planning solutions of buildings on the basis of numerical simulation of functional processes using the theory of human flows. There is a description of the prospects of using this method, which makes it possible to increase the coefficient of compactness, materials and works saving, more efficient use of space, reduce the cost of the life cycle of the building, save human forces and time to implement the functional of the building. The necessary initial data for modeling on the example of shopping and shopping-entertainment centers are considered. There are three main tasks for algorithmization of the functional of shopping centers. The conclusion is made about necessity of development of a method for objective assessment of buildings from the point of view of ergonomics of space-planning decisions based on the study of human behavior in buildings of different purposes.


2020 ◽  
Vol 20 (10) ◽  
pp. 1682-1695
Author(s):  
Foziyah Zakir ◽  
Kanchan Kohli ◽  
Farhan J. Ahmad ◽  
Zeenat Iqbal ◽  
Adil Ahmad

Osteoporosis is a progressive bone disease that remains unnoticed until a fracture occurs. It is more predominant in the older age population, particularly in females due to reduced estrogen levels and ultimately limited calcium absorption. The cost burden of treating osteoporotic fractures is too high, therefore, primary focus should be treatment at an early stage. Most of the marketed drugs are available as oral delivery dosage forms. The complications, as well as patient non-compliance, limit the use of oral therapy for prolonged drug delivery. Transdermal delivery systems seem to be a promising approach for the delivery of anti-osteoporotic active moieties. One of the confronting barriers is the passage of drugs through the SC layers followed by penetration to deeper dermal layers. The review focuses on how anti-osteoporotic drugs can be molded through different approaches so that they can be exploited for the skin to systemic delivery. Insights into the various challenges in transdermal delivery and how the novel delivery system can be used to overcome these have also been detailed.


2021 ◽  
Vol 2 (3) ◽  
pp. 1-24
Author(s):  
Chih-Kai Huang ◽  
Shan-Hsiang Shen

The next-generation 5G cellular networks are designed to support the internet of things (IoT) networks; network components and services are virtualized and run either in virtual machines (VMs) or containers. Moreover, edge clouds (which are closer to end users) are leveraged to reduce end-to-end latency especially for some IoT applications, which require short response time. However, the computational resources are limited in edge clouds. To minimize overall service latency, it is crucial to determine carefully which services should be provided in edge clouds and serve more mobile or IoT devices locally. In this article, we propose a novel service cache framework called S-Cache , which automatically caches popular services in edge clouds. In addition, we design a new cache replacement policy to maximize the cache hit rates. Our evaluations use real log files from Google to form two datasets to evaluate the performance. The proposed cache replacement policy is compared with other policies such as greedy-dual-size-frequency (GDSF) and least-frequently-used (LFU). The experimental results show that the cache hit rates are improved by 39% on average, and the average latency of our cache replacement policy decreases 41% and 38% on average in these two datasets. This indicates that our approach is superior to other existing cache policies and is more suitable in multi-access edge computing environments. In the implementation, S-Cache relies on OpenStack to clone services to edge clouds and direct the network traffic. We also evaluate the cost of cloning the service to an edge cloud. The cloning cost of various real applications is studied by experiments under the presented framework and different environments.


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