scholarly journals Technological Aspects of Energy-Efficient High-Quality Cleaning of Indoor Air from Harmful Impurities

2021 ◽  
Vol 24 (4) ◽  
pp. 17-24
Author(s):  
Valeriy Adamchuk ◽  
Oleg Dovbnenko ◽  
Yuriy Danik ◽  
Oleh Skydan
Keyword(s):  
Power Systems ◽  
Indoor Air ◽  
Energy Efficient ◽  
High Speed ◽  
Engineering Calculation ◽  
Research Process ◽  
High Rate ◽  
Air Purification ◽  
High Quality ◽  
Technical Parameters

Bringing to safe health standards and maintaining the basic parameters of the air (microclimate) in the premises for various purposes within the established limits with a high level of efficiency, pro-vides an opportunity to solve the problem of national importance – public health and the necessary environmental characteristics. The purpose of the study is to develop technology and foundations for the construction of universal systems of automated high-quality air purification in rooms for various purposes. Methods of analysis, synthesis, mathematical modelling, and engineering calculations were used in the research process. The technology, composition, and structure of universal systems for au-tomated cleaning and maintenance of the required indoor air quality, which provides automatic control of air parameters, have been developed. The composition and features of software and hardware are substantiated, the method of engineering calculation, structure of air purification system is developed and its technical parameters are defined. The synergetic effects in the implementation of air purification, which are achieved through a comprehensive, consistent with the procedures and pro-cesses of sequential parallel processing of injected and filtered air, have been investigated and proved. Developed technology and systems provide the ability to purify large volumes of air at high speed and quality in rooms with different levels of mechanical contamination, microflora, other harmful impurities, including microorganisms, allergens, dangerous viruses that cause infections with pathogens diseases characterised by mass and high rate of spread, such as COVID-19. For the first time, the problem of creation of energy-efficient high power systems of complex air purification for industrial premises of large sizes, which are 2.5-4 times more effective on all basic indicators in com-parison with the best analogues has been solved

scholarly journals Development of ultraviolet bactericidal recirculator for air purification of livestock buildings

2019 ◽  
pp. 149-155
Author(s):  
Dovbnenko, O. ◽  
Kolesnik, I.
Keyword(s):  
Engineering Calculation ◽  
Air Purification ◽  
Uvb Radiation ◽  
Purification Process ◽  
Technical Parameters ◽  
Livestock Buildings ◽  
Air Capacity ◽  
Installed Capacity ◽  
Bactericidal Efficiency ◽  
Grounded Design

Purpose. Improving the efficiency of the air purification process through the use of the created design and determining the rational parameters of the luminescent ultraviolet bactericidal air recirculator for livestock buildings. Methods. Methods of analysis, mathematical modeling and engineering methods for calculating irradiation installations are used. Results. The methods of application of ultraviolet bactericidal (UVB) plants for purification and disinfection of the air environment in agricultural premises are analyzed. Impact mechanism established of UVB radiation and ozone for pathogenic microflora and harmful impurities in the air of livestock premises is substantiated. The grounded design, the method of engineering calculation and the technical parameters of the UVB air recirculator are determined. Experimental samples of UVB recirculators of air in livestock buildings were made and the results of their production tests are presented. Conclusions. UVB recycle converter with application of luminescent UVB lamps with installed capacity = 180 W and air capacity = 1800 m3/h provides bactericidal efficiency = 75%, and with = 1000 m3/h – bactericidal efficiency = 90%. Keywords: recirculator, ultraviolet, bactericidal, ozone, air purification, disinfection, microclimate of livestock buildings.

High-Speed Growth of 4H-SiC Single Crystal Using Si-Cr Based Melt

2013 ◽  
Vol 740-742 ◽  
pp. 73-76 ◽  
Author(s):  
Motohisa Kado ◽  
Hironori Daikoku ◽  
Hidemitsu Sakamoto ◽  
Hiroshi Suzuki ◽  
Takeshi Bessho ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Single Crystal ◽  
High Speed ◽  
High Rate ◽  
Threading Dislocation ◽  
High Quality ◽  
X Ray ◽  
Interface Kinetics ◽  
Threading Dislocation Density ◽  
Rate Limiting

In this study, we have investigated the rate-limiting process of 4H-SiC solution growth using Si-Cr based melt, and have tried high-speed growth. It is revealed that the rate-limiting process of SiC growth under our experimental condition is interface kinetics, which can be controlled by such factors as temperature and supersaturation of carbon. By enhancing the interface kinetics, SiC crystal has been grown at a high rate of 2 mm/h. The FWHM values of X-ray rocking curves and threading dislocation density of the grown crystals are almost the same as those of seed crystal. Possibility of high-speed and high-quality growth of 4H-SiC has been indicated.

Structural changes in silicon-on-insulator material during post-implantation annealing

1986 ◽  
Vol 44 ◽  
pp. 736-737
Author(s):  
C. O. Jung ◽  
S. J. Krause ◽  
S.R. Wilson
Keyword(s):  
Integrated Circuits ◽  
Oxide Layer ◽  
High Speed ◽  
Structural Changes ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Quality ◽  
Radiation Hardened ◽  
Post Implantation ◽  
Very High

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.

Analysis Criteria for Choosing Energy Efficient High-Quality Light Sources and Luminaires

2018 ◽  
pp. 113-119
Author(s):  
Gennady Ya. Vagin ◽  
Eugene B. Solntsev ◽  
Oleg Yu. Malafeev
Keyword(s):  
Energy Efficiency ◽  
Energy Efficient ◽  
National Standards ◽  
Light Sources ◽  
The European Union ◽  
High Quality ◽  
Eu Directive ◽  
The World ◽  
A New Technique ◽  
Energy Labelling

The article analyses critera applying to the choice of energy efficient high quality light sources and luminaires, which are used in Russian domestic and international practice. It is found that national standards GOST P 54993–2012 and GOST P 54992– 2012 contain outdated criteria for determining indices and classes of energy efficiency of light sources and luminaires. They are taken from the 1998 EU Directive #98/11/EU “Electric lamps”, in which LED light sources and discharge lamps of high intensity were not included. A new Regulation of the European Union #874/2012/EU on energy labelling of electric lamps and luminaires, in which these light sources are taken into consideration, contains a new technique of determining classes of energy efficiency and new, higher classes are added. The article has carried out a comparison of calculations of the energy efficiency classes in accordance with GOST P 54993 and with Regulation #874/2012/EU, and it is found out that a calculation using GOST P 54993 gives underrated energy efficiency classes. This can lead to interdiction of export for certain light sources and luminaires, can discredit Russian domestic manufacturer light sources and does not correspond to the rules of the World Trade Organization (WTO).

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
Guofu Hou ◽  
Xinhua Geng ◽  
Xiaodan Zhang ◽  
Ying Zhao ◽  
Junming Xue ◽  
...  
Keyword(s):  
Phase Transition ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
High Rate ◽  
Very High Frequency ◽  
High Quality ◽  
Working Pressure ◽  
Hydrogen Dilution ◽  
Hydrogenated Amorphous

AbstractHigh rate deposition of high quality and stable hydrogenated amorphous silicon (a-Si:H) films were performed near the threshold of amorphous to microcrystalline phase transition using a very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The effect of hydrogen dilution on optic-electronic and structural properties of these films was investigated by Fourier-transform infrared (FTIR) spectroscopy, Raman scattering and constant photocurrent method (CPM). Experiment showed that although the phase transition was much influenced by hydrogen dilution, it also strongly depended on substrate temperature, working pressure and plasma power. With optimized condition high quality and high stable a-Si:H films, which exhibit σph/σd of 4.4×106 and deposition rate of 28.8Å/s, have been obtained.

COST-EFFECTIVE TECHNOLOGIES TO CONTROL INDOOR AIR QUALITY AND COMFORT IN ENERGY EFFICIENT BUILDING RETROFITTING

2015 ◽  
Vol 14 (7) ◽  
pp. 1487-1494 ◽  
Author(s):  
Marco Arnesano ◽  
Gian Marco Revel ◽  
Filippo Pietroni ◽  
Jurgen Frick ◽  
Manuela Reichert ◽  
...  
Keyword(s):  
Air Quality ◽  
Indoor Air Quality ◽  
Indoor Air ◽  
Energy Efficient ◽  
Cost Effective ◽  
Energy Efficient Building

scholarly journals 2D-3D integration of hexagonal boron nitride and a high-κ dielectric for ultrafast graphene-based electro-absorption modulators

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Hitesh Agarwal ◽  
Bernat Terrés ◽  
Lorenzo Orsini ◽  
Alberto Montanaro ◽  
Vito Sorianello ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hafnium Oxide ◽  
High Speed ◽  
Hexagonal Boron Nitride ◽  
Temperature Stability ◽  
Cost Effective ◽  
Fold Increase ◽  
Building Blocks ◽  
High Quality ◽  
New Device

AbstractElectro-absorption (EA) waveguide-coupled modulators are essential building blocks for on-chip optical communications. Compared to state-of-the-art silicon (Si) devices, graphene-based EA modulators promise smaller footprints, larger temperature stability, cost-effective integration and high speeds. However, combining high speed and large modulation efficiencies in a single graphene-based device has remained elusive so far. In this work, we overcome this fundamental trade-off by demonstrating the 2D-3D dielectric integration in a high-quality encapsulated graphene device. We integrated hafnium oxide (HfO2) and two-dimensional hexagonal boron nitride (hBN) within the insulating section of a double-layer (DL) graphene EA modulator. This combination of materials allows for a high-quality modulator device with high performances: a ~39 GHz bandwidth (BW) with a three-fold increase in modulation efficiency compared to previously reported high-speed modulators. This 2D-3D dielectric integration paves the way to a plethora of electronic and opto-electronic devices with enhanced performance and stability, while expanding the freedom for new device designs.

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