scholarly journals Interactions between Terrestrial Cosmic-Ray Neutrons and III–V Compound Semiconductors

2020 ◽  
Author(s):  
Daniela Munteanu ◽  
Jean-Luc Autran
Keyword(s):  
Bulk Material ◽  
Complementary Metal Oxide Semiconductor ◽  
Cosmic Ray ◽  
Compound Semiconductors ◽  
Reaction Rates ◽  
Binary Compound ◽  
High Energy ◽  
Oxide Semiconductor ◽  
Secondary Products ◽  
The Impact

This work explores by numerical simulation the impact of high-energy atmospheric neutrons and their interactions with III–V binary compound semiconductors. The efforts have focused on eight III–V semiconductors: GaAs, AlAs, InP, InAs, GaSb, InSb, GaN, and GaP. For each material, extensive Geant4 numerical simulations have been performed considering a bulk target exposed to a neutron source emulating the atmospheric neutron spectrum at terrestrial level. Results emphasize in detail the reaction rates per type of reaction (elastic, inelastic, nonelastic) and offer a classification of all the neutron-induced secondary products as a function of their atomic number, kinetic energy, initial stopping power, and range. Implications for single-event effects (SEEs) are analyzed and discussed, notably in terms of energy and charge deposited in the bulk material and in the first nanometers of particle range with respect to the critical charge for modern complementary metal oxide semiconductor (CMOS) technologies.

The Impact of Technology Scaling for RF Complementary Metal–Oxide–Semiconductor

2009 ◽  
Vol 48 (1) ◽  
pp. 011208
Author(s):  
Eiji Morifuji ◽  
Hideki Kimijima ◽  
Kenji Kojima ◽  
Masaaki Iwai ◽  
Fumitomo Matsuoka
Keyword(s):  
Metal Oxide ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Technology Scaling ◽  
Impact Of Technology ◽  
The Impact

scholarly journals Towards CMOS Integrated Microfluidics Using Dielectrophoretic Immobilization

Biosensors ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 77 ◽  
Author(s):  
Honeyeh Matbaechi Ettehad ◽  
Rahul Kumar Yadav ◽  
Subhajit Guha ◽  
Christian Wenger
Keyword(s):  
Finite Element ◽  
Point Of Care ◽  
Microfluidic Channel ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Geometrical Parameters ◽  
Biological Particles ◽  
Wide Range ◽  
Integrated Microfluidics ◽  
The Impact

Dielectrophoresis (DEP) is a nondestructive and noninvasive method which is favorable for point-of-care medical diagnostic tests. This technique exhibits prominent relevance in a wide range of medical applications wherein the miniaturized platform for manipulation (immobilization, separation or rotation), and detection of biological particles (cells or molecules) can be conducted. DEP can be performed using advanced planar technologies, such as complementary metal-oxide-semiconductor (CMOS) through interdigitated capacitive biosensors. The dielectrophoretically immobilization of micron and submicron size particles using interdigitated electrode (IDE) arrays is studied by finite element simulations. The CMOS compatible IDEs have been placed into the silicon microfluidic channel. A rigorous study of the DEP force actuation, the IDE’s geometrical structure, and the fluid dynamics are crucial for enabling the complete platform for CMOS integrated microfluidics and detection of micron and submicron-sized particle ranges. The design of the IDEs is performed by robust finite element analyses to avoid time-consuming and costly fabrication processes. To analyze the preliminary microfluidic test vehicle, simulations were first performed with non-biological particles. To produce DEP force, an AC field in the range of 1 to 5 V (peak-to-peak) is applied to the IDE. The impact of the effective external and internal properties, such as actuating DEP frequency and voltage, fluid flow velocity, and IDE’s geometrical parameters are investigated. The IDE based system will be used to immobilize and sense particles simultaneously while flowing through the microfluidic channel. The sensed particles will be detected using the capacitive sensing feature of the biosensor. The sensing and detecting of the particles are not in the scope of this paper and will be described in details elsewhere. However, to provide a complete overview of this system, the working principles of the sensor, the readout detection circuit, and the integration process of the silicon microfluidic channel are briefly discussed.

Piezoelectric Thin Films for Sensors, Actuators, and Energy Harvesting

MRS Bulletin ◽  
2009 ◽  
Vol 34 (9) ◽  
pp. 658-664 ◽  
Author(s):  
P. Muralt ◽  
R. G. Polcawich ◽  
S. Trolier-McKinstry
Keyword(s):  
Thin Films ◽  
Energy Harvesting ◽  
Microelectromechanical Systems ◽  
Low Voltage ◽  
High Sensitivity ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Mems Devices ◽  
Si Substrates ◽  
The Impact

AbstractPiezoelectric microelectromechanical systems (MEMS) offer the opportunity for high-sensitivity sensors and large displacement, low-voltage actuators. In particular, recent advances in the deposition of perovskite thin films point to a generation of MEMS devices capable of large displacements at complementary metal oxide semiconductor-compatible voltage levels. Moreover, if the devices are mounted in mechanically noisy environments, they also can be used for energy harvesting. Key to all of these applications is the ability to obtain high piezoelectric coefficients and retain these coefficients throughout the microfabrication process. This article will review the impact of composition, orientation, and microstructure on the piezoelectric properties of perovskite thin films such as PbZr1−xTixO3 (PZT). Superior piezoelectric coefficients (e31, f of −18 C/m2) are achieved in {001}-oriented PbZr0.52Ti0.48O3 films with improved compositional homogeneity on Si substrates. The advent of such high piezoelectric responses in films opens up a wide variety of possible applications. A few examples of these, including low-voltage radio frequency MEMS switches and resonators, actuators for millimeter-scale robotics, droplet ejectors, energy scavengers for unattended sensors, and medical imaging transducers, will be discussed.

scholarly journals Recent Progress in the Voltage-Controlled Magnetic Anisotropy Effect and the Challenges Faced in Developing Voltage-Torque MRAM

Micromachines ◽  
2019 ◽  
Vol 10 (5) ◽  
pp. 327 ◽  
Author(s):  
Takayuki Nozaki ◽  
Tatsuya Yamamoto ◽  
Shinji Miwa ◽  
Masahito Tsujikawa ◽  
Masafumi Shirai ◽  
...  
Keyword(s):  
Magnetic Anisotropy ◽  
High Speed ◽  
Recent Progress ◽  
Semiconductor Industry ◽  
Random Access ◽  
Complementary Metal Oxide Semiconductor ◽  
Electrical Current ◽  
High Energy ◽  
Oxide Semiconductor ◽  
Dynamic Switching

The electron spin degree of freedom can provide the functionality of “nonvolatility” in electronic devices. For example, magnetoresistive random access memory (MRAM) is expected as an ideal nonvolatile working memory, with high speed response, high write endurance, and good compatibility with complementary metal-oxide-semiconductor (CMOS) technologies. However, a challenging technical issue is to reduce the operating power. With the present technology, an electrical current is required to control the direction and dynamics of the spin. This consumes high energy when compared with electric-field controlled devices, such as those that are used in the semiconductor industry. A novel approach to overcome this problem is to use the voltage-controlled magnetic anisotropy (VCMA) effect, which draws attention to the development of a new type of MRAM that is controlled by voltage (voltage-torque MRAM). This paper reviews recent progress in experimental demonstrations of the VCMA effect. First, we present an overview of the early experimental observations of the VCMA effect in all-solid state devices, and follow this with an introduction of the concept of the voltage-induced dynamic switching technique. Subsequently, we describe recent progress in understanding of physical origin of the VCMA effect. Finally, new materials research to realize a highly-efficient VCMA effect and the verification of reliable voltage-induced dynamic switching with a low write error rate are introduced, followed by a discussion of the technical challenges that will be encountered in the future development of voltage-torque MRAM.

Characterization of Reduced-pressure Chemical Vapor Deposition Polycrystalline Silicon Germanium Deposited at Temperatures ≤550 °C

2002 ◽  
Vol 17 (7) ◽  
pp. 1580-1586 ◽  
Author(s):  
Sherif Sedky ◽  
Ann Witvrouw ◽  
Matty Caymax ◽  
Annelies Saerens ◽  
Paul Van Houtte
Keyword(s):  
Silicon Germanium ◽  
Deposition Temperature ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Reduced Pressure ◽  
Germanium Content ◽  
Wafer Temperature ◽  
The Impact

This paper investigates the possibility of reducing the deposition temperature of polycrystalline silicon germanium to a level compatible with complementary metal-oxide semiconductor (CMOS) post processing. To achieve this goal, the exact wafer temperature during deposition was experimentally determined and it was found to be 30 °C lower than the reactor setting temperature. The deposition temperature was reduced from 625 to 500 °C. The impact of varying the deposition pressure from 10 to 760 torr and the germanium content from 15% to 100% was investigated. X-ray diffraction spectroscopy and transmission electron microscopy showed that the SixGe1−x films deposited at an actual wafer temperature of 520 °C are polycrystalline for germanium contents as low as 15%. Also, it was shown that the deposition conditions can be adjusted to yield a low tensile stress at an actual wafer temperature of 520 °C, which is suitable for integrating surface micromachined micro-electromechanical systems on top of standard CMOS wafers with Al interconnects.

scholarly journals Cloud distribution evaluated by the WRF model during the EUSO-SPB1 flight

2019 ◽  
Vol 210 ◽  
pp. 05006
Author(s):  
K Shinozaki ◽  
S Monte ◽  
S Ferrarese ◽  
M Manfrin ◽  
ME Bertaina ◽  
...  
Keyword(s):  
Photon Counting ◽  
Wrf Model ◽  
Cosmic Ray ◽  
High Energy ◽  
Weather Research And Forecasting ◽  
Fluorescence Detector ◽  
Air Shower ◽  
Detection Mode ◽  
The Impact

EUSO-SPB1 was a balloon-borne mission of the JEM-EUSO (Joint Experiment Missions for Extreme Universe Space Observatory) Program aiming at the ultra-high energy cosmic ray (UHECR) observations from space. We operated the EUSO-SPB1 telescope consisting of 1 m2 Fresnel refractive optics and multi-anode photomultiplier tubes. With a total of 2304 channels, each performed the photon counting every 2.5 µs, allowing for spatiotemporal imaging of the air shower events in an ~ 11°× 11° field of view. EUSO-SPB1 was the first balloon-borne fluorescence detector with a potential to detect air shower events initiated by the EeV energy cosmic rays. On 24 April 2017 UTC, EUSO-SPB1 was launched on the NASA’s Super Pressure Balloon that flew at ~16 – 33 km flight height for ~12 days. Before the flight was terminated, ~27 hours of data acquired in the air shower detection mode were transmitted to the ground. In the present work, we aim at evaluating the role of the clouds during the operation of EUSO-SPB1. We employ the WRF (Weather Research and Forecasting) model to numerically simulate the cloud distribution below EUSO-SPB1. We discuss the key results of the WRF model and the impact of the clouds on the air shower measurement and the efficiency of the cosmic ray observation. The present work is a part of the collaborative effort to estimate the exposure for air shower detections.

scholarly journals Design and Analysis of SEU Hardened Latch for Low Power and High Speed Applications

2019 ◽  
Vol 9 (3) ◽  
pp. 21 ◽  
Author(s):  
Satheesh Kumar S ◽  
Kumaravel S
Keyword(s):  
Low Power ◽  
High Speed ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
High Energy ◽  
Oxide Semiconductor ◽  
High Energy Particle ◽  
Single Event Upset ◽  
Single Event ◽  
Clock Gating

Due to the reduction in technology scaling, gate capacitance and charge storage in sensitive nodes are rapidly decreasing, making Complementary Metal Oxide Semiconductor (CMOS) circuits more sensitive to soft errors caused by radiation. In this paper, a low-power and high-speed single event upset radiation hardened latch is proposed. The proposed latch can withstand single event upsets completely when the high energy particle hit on any one of its intermediate nodes. The proposed latch structure comprises of four CMOS feedback schemes and a Muller C-element with clock gating technique. For the sake of comparison, the proposed and the existing latches in the literature are implemented in 45nm CMOS technology. From the post layout simulation results, it may be noted that the proposed latch achieves 8% low power consumption, 95% less delay, and a 94% reduction in power-delay-product compared to the existing single event upset resilient and single event tolerant latches. Monte Carlo simulations show that the proposed latch is less sensitive to process, voltage, and temperature variations in comparison with the existing hardened latches in the literature.

scholarly journals RESULTS FROM LHCF EXPERIMENT

2013 ◽  
Vol 53 (A) ◽  
pp. 732-735
Author(s):  
Alessia Tricomi
Keyword(s):  
Cosmic Ray ◽  
High Energy ◽  
Photon Spectra ◽  
The Impact

The LHCf experiment has taken data in 2009 and 2010 p–p collisions at LHC at √s = 0.9TeV and √s = 7TeV. In this paper the most up-to-date results on the inclusive photon spectra and the π<sup>0</sup> spectra measured by LHCf are reported. Comparison of these spectra with the model expectations and the impact on high energy cosmic ray (HECR) Physics are iscussed. In addition, perspectives for future analyses as well as the program for the next data taking period, in particular the foreseen data taking in p–Pb collisions, will be discussed.

scholarly journals Revisiting the cosmic-ray induced Venusian ionization with the Atmospheric Radiation Interaction Simulator (AtRIS)

2019 ◽  
Vol 624 ◽  
pp. A124 ◽  
Author(s):  
Konstantin Herbst ◽  
Saša Banjac ◽  
Tom A. Nordheim
Keyword(s):  
Secondary Particle ◽  
Cosmic Ray ◽  
High Energy ◽  
Planetary Atmospheres ◽  
Atmospheric Radiation ◽  
Solar Particle Events ◽  
Galactic Cosmic Ray ◽  
The Impact ◽  
Atmospheric Ionization ◽  
Venusian Atmosphere

Context. Cosmic ray bombardment represents a major source of ionization in planetary atmospheres. The higher the energy of the primary cosmic ray particles, the deeper they can penetrate into the atmosphere. In addition, incident high energy cosmic ray particles induce extensive secondary particle cascades (“air showers”) that can contain up to several billion secondary particles per incoming primary particle. To quantify cosmic ray-induced effects on planetary atmospheres it is therefore important to accurately model the entire secondary particle cascade. This is particularly important in thick planetary atmospheres where the secondary particle cascades can develop extensively before being absorbed by the surface. Aims. Inside the Venusian atmosphere, cosmic rays are the dominant driver for the ionization below an altitude of ~100 km. In this work we revisit the numerical modeling of the galactic and solar cosmic-ray induced atmospheric ionization for cosmic ray ions from Hydrogen (Z = 1) to Nickel (Z = 28) and investigate the influence of strong solar energetic particle events inside the Venusian atmosphere. Methods. The Atmospheric Radiation Interaction Simulator (AtRIS), a newly developed simulation code to model the interaction of the near-(exo)planet particle and radiation field with the (exo)planetary atmosphere, was used to revisit the modeling of the altitude-dependent Venusian atmospheric ionization. Thereby, spherical geometry, the newest version of Geant4 (10.5) as well as the newest Geant4-based hadronic and electromagnetic interaction models were utilized. Results. Based on our new model approach we show that previous studies may have underestimated the galactic cosmic ray-induced atmospheric ion pair production by, amongst others, underestimating the influence of galactic cosmic ray protons above 1 TeV/nuc. Furthermore, we study the influence of 71 exceptionally strong solar particle events that were measured as Ground Level Enhancements at the Earth’s surface, and show a detailed analysis of the impact of such strong events on the Venusian ionization.

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