Towards CMOS Integrated Microfluidics Using Dielectrophoretic Immobilization

Dielectrophoresis (DEP) is a nondestructive and noninvasive method which is favorable for point-of-care medical diagnostic tests. This technique exhibits prominent relevance in a wide range of medical applications wherein the miniaturized platform for manipulation (immobilization, separation or rotation), and detection of biological particles (cells or molecules) can be conducted. DEP can be performed using advanced planar technologies, such as complementary metal-oxide-semiconductor (CMOS) through interdigitated capacitive biosensors. The dielectrophoretically immobilization of micron and submicron size particles using interdigitated electrode (IDE) arrays is studied by finite element simulations. The CMOS compatible IDEs have been placed into the silicon microfluidic channel. A rigorous study of the DEP force actuation, the IDE’s geometrical structure, and the fluid dynamics are crucial for enabling the complete platform for CMOS integrated microfluidics and detection of micron and submicron-sized particle ranges. The design of the IDEs is performed by robust finite element analyses to avoid time-consuming and costly fabrication processes. To analyze the preliminary microfluidic test vehicle, simulations were first performed with non-biological particles. To produce DEP force, an AC field in the range of 1 to 5 V (peak-to-peak) is applied to the IDE. The impact of the effective external and internal properties, such as actuating DEP frequency and voltage, fluid flow velocity, and IDE’s geometrical parameters are investigated. The IDE based system will be used to immobilize and sense particles simultaneously while flowing through the microfluidic channel. The sensed particles will be detected using the capacitive sensing feature of the biosensor. The sensing and detecting of the particles are not in the scope of this paper and will be described in details elsewhere. However, to provide a complete overview of this system, the working principles of the sensor, the readout detection circuit, and the integration process of the silicon microfluidic channel are briefly discussed.

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Local Hydrostatic Pressure Test for Cylindrical Vessels

Journal of Pressure Vessel Technology ◽

10.1115/1.4033533 ◽

2016 ◽

Vol 139 (1) ◽

Cited By ~ 1

Author(s):

H. Al-Gahtani ◽

A. Khathlan ◽

M. Sunar ◽

M. Naffa'a

Keyword(s):

Finite Element Method ◽

Finite Element ◽

Hydrostatic Pressure ◽

Cylindrical Vessel ◽

Geometrical Parameters ◽

The Finite Element Method ◽

Wide Range ◽

Pressure Test ◽

Local Test ◽

Alternative Test

The juncture of a small cylindrical nozzle to a large cylindrical vessel is very common in the pressure vessel industry. Upon fabrication, it is required that the whole structure is subjected to pressure testing. The test can be expensive as it necessitates pressurizing the whole structure typically having a large volume. Hence, it is proposed to make a “local test,” which is considerably simpler as it involves capping the small nozzle and testing only a relatively small portion of the structure. This paper investigates the accuracy and reliability of such an alternative test, using the finite-element method. Two different finite-element types are used in the study, specifically a shell-based element and a solid-based element. The verification of the finite-element results for two different cases shows that the models used in the study are valid. It also proves that the two element types yield very similar stress results. In addition, the study includes a numerical investigation of more than 40 different nozzle-to-vessel junctures with a wide range of parameters for the nozzle and vessel. The results indicate that the use of cylindrical caps that are slightly larger than the nozzle is not recommended as it produces stresses that are significantly different from those for the original required pressure test. As such, the study provides an estimate of the smallest size of the cap that may be used in the local test to generate stresses that agree with the full test. For most practical geometries, it is shown that the size of the cap needs to be at least 2–30 times larger than that of the nozzle, depending on the geometrical parameters of the juncture.

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A 31 GHz body-biased configurable power amplifier in 28 nm FD-SOI CMOS for 5 G applications

International Journal of Microwave and Wireless Technologies ◽

10.1017/s1759078720001087 ◽

2020 ◽

pp. 1-18

Author(s):

Florent Torres ◽

Eric Kerhervé ◽

Andreia Cathelin ◽

Magali De Matos

Keyword(s):

Power Amplifier ◽

Complementary Metal Oxide Semiconductor ◽

Cmos Technology ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Fully Depleted ◽

Technology Roadmap ◽

Wide Range ◽

28 Nm ◽

Soi Cmos

Abstract This paper presents a 31 GHz integrated power amplifier (PA) in 28 nm Fully Depleted Silicon-On-Insulator Complementary Metal Oxide Semiconductor (FD-SOI CMOS) technology and targeting SoC implementation for 5 G applications. Fine-grain wide range power control with more than 10 dB tuning range is enabled by body biasing feature while the design improves voltage standing wave ratio (VSWR) robustness, stability and reverse isolation by using optimized 90° hybrid couplers and capacitive neutralization on both stages. Maximum power gain of 32.6 dB, PAEmax of 25.5% and Psat of 17.9 dBm are measured while robustness to industrial temperature range and process spread is demonstrated. Temperature-induced performance variation compensation, as well as amplitude-to-phase modulation (AM-PM) optimization regarding output power back-off, are achieved through body-bias node. This PA exhibits an International Technology Roadmap for Semiconductors figure of merit (ITRS FOM) of 26 925, the highest reported around 30 GHz to authors' knowledge.

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Low-Fouling Substrates for Plasmonic Sensing of Circulating Biomarkers in Biological Fluids

Biosensors ◽

10.3390/bios10060063 ◽

2020 ◽

Vol 10 (6) ◽

pp. 63

Author(s):

Elba Mauriz

Keyword(s):

Biological Fluids ◽

Point Of Care ◽

Disease Onset ◽

Screening Tools ◽

Circulating Biomarkers ◽

Prognostic Information ◽

Wide Range ◽

Biomarker Analysis ◽

Surface Enhanced Raman ◽

The Impact

The monitoring of biomarkers in body fluids provides valuable prognostic information regarding disease onset and progression. Most biosensing approaches use noninvasive screening tools and are conducted in order to improve early clinical diagnosis. However, biofouling of the sensing surface may disturb the quantification of circulating biomarkers in complex biological fluids. Thus, there is a great need for antifouling interfaces to be designed in order to reduce nonspecific adsorption and prevent inactivation of biological receptors and loss of sensitivity. To address these limitations and enable their application in clinical practice, a variety of plasmonic platforms have been recently developed for biomarker analysis in easily accessible biological fluids. This review presents an overview of the latest advances in the design of antifouling strategies for the detection of clinically relevant biomarkers on the basis of the characteristics of biological samples. The impact of nanoplasmonic biosensors as point-of-care devices has been examined for a wide range of biomarkers associated with cancer, inflammatory, infectious and neurodegenerative diseases. Clinical applications in readily obtainable biofluids such as blood, saliva, urine, tears and cerebrospinal and synovial fluids, covering almost the whole range of plasmonic applications, from surface plasmon resonance (SPR) to surface-enhanced Raman scattering (SERS), are also discussed.

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The Impact of Technology Scaling for RF Complementary Metal–Oxide–Semiconductor

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.011208 ◽

2009 ◽

Vol 48 (1) ◽

pp. 011208

Author(s):

Eiji Morifuji ◽

Hideki Kimijima ◽

Kenji Kojima ◽

Masaaki Iwai ◽

Fumitomo Matsuoka

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Technology Scaling ◽

Impact Of Technology ◽

The Impact

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Design of Low Power Integrated CMOS Potentiometric Biosensor for Direct Electronic Detection of DNA Hybridization

Jurnal Teknologi ◽

10.11113/jt.v67.2054 ◽

2014 ◽

Vol 67 (1) ◽

Author(s):

Wong How Hwan ◽

Vinny Lam Siu Fan ◽

Yusmeeraz Yusof

Keyword(s):

Power Consumption ◽

Low Power ◽

Dna Hybridization ◽

Point Of Care ◽

Complementary Metal Oxide Semiconductor ◽

Cmos Technology ◽

Channel Length ◽

Electrical Signal ◽

Oxide Semiconductor ◽

Detection Circuit

The purpose of this research is to design a low power integrated complementary metal oxide semiconductor (CMOS) detection circuit for charge-modulated field-effect transistor (CMFET) and it is used for the detection of deoxyribonucleic acid (DNA) hybridization. With the available CMOS technology, it allows the realization of complete systems which integrate the sensing units and transducing elements in the same device. Point-of-care (POC) testing device is a device that allows anyone to operate anywhere and obtain immediate results. One of the important features of POC device is low power consumption because it is normally battery-operated. The power consumption of the proposed integrated CMOS detection circuit requires only 14.87 mW. The detection circuit will amplify the electrical signal that comes from the CMFET to a specified level in order to improve the recording characteristics of the biosensor. Self-cascode topology was used in the drain follower circuit in order to reduce the channel length modulation effect. The proposed detection circuit was designed with 0.18µm Silterra CMOS fabrication process and simulated under Cadence Simulation Tool.

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Prediction of a Two-Transistor Vertical QNOT Gate

Applied Sciences ◽

10.3390/app10217597 ◽

2020 ◽

Vol 10 (21) ◽

pp. 7597

Author(s):

Heesung Han ◽

Chang-Hyun Kim

Keyword(s):

Finite Element ◽

Complementary Metal Oxide Semiconductor ◽

Logic Circuits ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Cmos Inverter ◽

Material Parameters ◽

Element Simulation ◽

Charge Injection Barrier ◽

Injection Barrier

A new design of quaternary inverter (QNOT gate) is proposed by means of finite-element simulation. Traditionally, increasing the number of data levels in digital logic circuits was achieved by increasing the number of transistors. Our QNOT gate consists of only two transistors, resembling the binary complementary metal-oxide-semiconductor (CMOS) inverter, yet the two additional levels are generated by controlling the charge-injection barrier and electrode overlap. Furthermore, these two transistors are stacked vertically, meaning that the entire footprint only consumes the area of one single transistor. We explore several key geometrical and material parameters in a series of simulations to show how to systematically modulate and optimize the quaternary logic behaviors.

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Piezoelectric Thin Films for Sensors, Actuators, and Energy Harvesting

MRS Bulletin ◽

10.1557/mrs2009.177 ◽

2009 ◽

Vol 34 (9) ◽

pp. 658-664 ◽

Cited By ~ 188

Author(s):

P. Muralt ◽

R. G. Polcawich ◽

S. Trolier-McKinstry

Keyword(s):

Thin Films ◽

Energy Harvesting ◽

Microelectromechanical Systems ◽

Low Voltage ◽

High Sensitivity ◽

Complementary Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Mems Devices ◽

Si Substrates ◽

The Impact

AbstractPiezoelectric microelectromechanical systems (MEMS) offer the opportunity for high-sensitivity sensors and large displacement, low-voltage actuators. In particular, recent advances in the deposition of perovskite thin films point to a generation of MEMS devices capable of large displacements at complementary metal oxide semiconductor-compatible voltage levels. Moreover, if the devices are mounted in mechanically noisy environments, they also can be used for energy harvesting. Key to all of these applications is the ability to obtain high piezoelectric coefficients and retain these coefficients throughout the microfabrication process. This article will review the impact of composition, orientation, and microstructure on the piezoelectric properties of perovskite thin films such as PbZr1−xTixO3 (PZT). Superior piezoelectric coefficients (e31, f of −18 C/m2) are achieved in {001}-oriented PbZr0.52Ti0.48O3 films with improved compositional homogeneity on Si substrates. The advent of such high piezoelectric responses in films opens up a wide variety of possible applications. A few examples of these, including low-voltage radio frequency MEMS switches and resonators, actuators for millimeter-scale robotics, droplet ejectors, energy scavengers for unattended sensors, and medical imaging transducers, will be discussed.

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Electro-Absorption Modulation in GeSn Alloys for Wide-Spectrum Mid-Infrared Applications

10.21203/rs.3.rs-138946/v1 ◽

2021 ◽

Author(s):

Yun-Da Hsieh ◽

Jun-Han Lin ◽

Richard Soref ◽

Greg Sun ◽

Hung-Hsiang Cheng ◽

...

Keyword(s):

Integrated Circuits ◽

Wide Spectrum ◽

Complementary Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Optical Modulation ◽

Bandgap Energy ◽

Optical Modulators ◽

Mid Infrared ◽

Wide Range ◽

On Chip

Abstract Si-based electronic-photonic integrated circuits (EPICs), which are compatible with state-of-the-art complementary metal-oxide-semiconductor (CMOS) processes, offer promising opportunities for on-chip mid-infrared (MIR) photonic systems. However, the lack of efficient MIR optical modulators on Si hinders the utilization of MIR EPICs. Here, we clearly demonstrate the Franz-Keldysh (FK) effect in GeSn alloys and achieve on-Si MIR electro-absorption optical modulation using GeSn heterostructures. Our experimental and theoretical results verify that the direct bandgap energy of GeSn can be widely tuned by varying the Sn content, thereby realizing wavelength-tunable optical modulation in the MIR range with a figure-of-merit of Δα /α0 (FOM) greater than 1.5 and a broadband operating range greater than 140 nm. In contrast to conventional silicon-photonic modulators based on the plasma dispersion effect, our GeSn heterostructure demonstrates practical and effective FK MIR optical modulation on Si and helps unlock the potential of MIR EPICs for a wide range of applications.

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Tank Car Puncture Analyses for Various Impactors and Impact Conditions

2013 Joint Rail Conference ◽

10.1115/jrc2013-2560 ◽

2013 ◽

Author(s):

Steven W. Kirkpatrick ◽

Francisco Gonzalez ◽

Karl Alexy

Keyword(s):

Finite Element ◽

Research Program ◽

Impact Testing ◽

Impact Behavior ◽

Finite Element Analyses ◽

Damage And Failure ◽

Wide Range ◽

Significant Research ◽

Detailed Simulation ◽

The Impact

There has been significant research in recent years to analyze and improve the impact behavior and puncture resistance of railroad tank cars. Much of this research has been performed using detailed nonlinear finite element analyses supported by full scale impact testing. This use of detailed simulation methodologies has significantly improved our understanding of the tank impact behaviors and puncture prediction. However, the evaluations in these past studies were primarily performed for a few idealized impact scenarios. This paper describes a research program to evaluate railroad tank car puncture behaviors under more general impact conditions. The approach used in this research program was to apply a tank impact and puncture prediction capability using detailed finite element analyses (FEA). The analysis methodologies apply advanced damage and failure models that were validated by series of material tests under various loading conditions. In this study, the analyses were applied to investigate the tank puncture behaviors for a wide range of impact conditions.

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Imaging-based spectrometer-less optofluidic biosensors based on dielectric metasurfaces for detecting extracellular vesicles

Nature Communications ◽

10.1038/s41467-021-23257-y ◽

2021 ◽

Vol 12 (1) ◽

Author(s):

Yasaman Jahani ◽

Eduardo R. Arvelo ◽

Filiz Yesilkoy ◽

Kirill Koshelev ◽

Chiara Cianciaruso ◽

...

Keyword(s):

Real Time ◽

Extracellular Vesicles ◽

Bound States ◽

Point Of Care ◽

Complementary Metal Oxide Semiconductor ◽

Spectral Shift ◽

Processing Technique ◽

Oxide Semiconductor ◽

Linear Estimator ◽

Large Area

AbstractBiosensors are indispensable tools for public, global, and personalized healthcare as they provide tests that can be used from early disease detection and treatment monitoring to preventing pandemics. We introduce single-wavelength imaging biosensors capable of reconstructing spectral shift information induced by biomarkers dynamically using an advanced data processing technique based on an optimal linear estimator. Our method achieves superior sensitivity without wavelength scanning or spectroscopy instruments. We engineered diatomic dielectric metasurfaces supporting bound states in the continuum that allows high-quality resonances with accessible near-fields by in-plane symmetry breaking. The large-area metasurface chips are configured as microarrays and integrated with microfluidics on an imaging platform for real-time detection of breast cancer extracellular vesicles encompassing exosomes. The optofluidic system has high sensing performance with nearly 70 1/RIU figure-of-merit enabling detection of on average 0.41 nanoparticle/µm2 and real-time measurements of extracellular vesicles binding from down to 204 femtomolar solutions. Our biosensors provide the robustness of spectrometric approaches while substituting complex instrumentation with a single-wavelength light source and a complementary-metal-oxide-semiconductor camera, paving the way toward miniaturized devices for point-of-care diagnostics.

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