Calibration of argon ion sputter rates using nuclear microanalysis and Auger spectroscopy

1985 ◽  
Vol 7 (2) ◽  
pp. 105-108 ◽  
Author(s):  
R. L. Tapping ◽  
R. D. Davidson ◽  
T. E. Jackman
Keyword(s):  
Auger Spectroscopy ◽  
Nuclear Microanalysis ◽  
Argon Ion

Preferential Sputtering of Ni3Al Single Crystals Studied Using Atom-Probe Field-Ion Microscopy and XPS

1981 ◽  
Vol 39 ◽  
pp. 16-17
Author(s):  
M.P. Thomas ◽  
A.R. Waugh ◽  
M.J. Southon ◽  
Brian Ralph
Keyword(s):  
Single Crystals ◽  
Photoelectron Spectroscopy ◽  
Surface Composition ◽  
Depth Profiling ◽  
Analytical Techniques ◽  
Atom Probe ◽  
Probe Field ◽  
Preferential Sputtering ◽  
Argon Ion Bombardment ◽  
Argon Ion

It is well known that ion-induced sputtering from numerous multicomponent targets results in marked changes in surface composition (1). Preferential removal of one component results in surface enrichment in the less easily removed species. In this investigation, a time-of-flight atom-probe field-ion microscope A.P. together with X-ray photoelectron spectroscopy XPS have been used to monitor alterations in surface composition of Ni3Al single crystals under argon ion bombardment. The A.P. has been chosen for this investigation because of its ability using field evaporation to depth profile through a sputtered surface without the need for further ion sputtering. Incident ion energy and ion dose have been selected to reflect conditions widely used in surface analytical techniques for cleaning and depth-profiling of samples, typically 3keV and 1018 - 1020 ion m-2.

The many faces of STEM in materials science

1991 ◽  
Vol 49 ◽  
pp. 440-441
Author(s):  
John Silcox
Keyword(s):  
Materials Science ◽  
Auger Spectroscopy ◽  
Dark Field ◽  
High Tc Superconductors ◽  
High Tc ◽  
Acoustic Environment ◽  
Electromagnetic Vibration ◽  
The Many ◽  
Serial Mode

Determination of the microstructure and microchemistry of small features often provides the insight needed for the understanding of processes in real materials. In many cases, it is not adequate to use microscopy alone. Microdiffraction and microspectroscopic information such as EELS, X-ray microprobe analysis and Auger spectroscopy can all contribute vital parts of the picture. For a number of reasons, dedicated STEM offers considerable promise as a quantitative instrument. In this paper, we review progress towards effective quantitative use of STEM with illustrations drawn from studies of high Tc superconductors, compound semiconductors and metallization of H-terminated silicon.Intrinsically, STEM is a quantitative instrument. Images are acquired directly by detectors in serial mode which is particularly convenient for digital image acquisition, control and display. The VG HB501A at Cornell has been installed in a particularly stable electromagnetic, vibration and acoustic environment. Care has been paid to achieving UHV conditions (i.e., 10-10 Torr). Finally, it has been interfaced with a VAX 3200 work station by Kirkland. This permits, for example, the acquisition of bright field (or energy loss) images and dark field images simultaneously as quantitative arrays in perfect registration.

Transmission Electron Microscopy Studies of Aluminum Oxidation

1985 ◽  
Vol 43 ◽  
pp. 268-269
Author(s):  
J.Y. Lee
Keyword(s):  
Nucleation And Growth ◽  
Ion Milling ◽  
Cross Sectional ◽  
Polycrystalline Aluminum ◽  
Axis Orientation ◽  
Temperature Oxidation ◽  
Aluminum Oxidation ◽  
Transmission Electron ◽  
High Resolution Images ◽  
Argon Ion

In the oxidation of metals and alloys, microstructural features at the atomic level play an important role in the nucleation and growth of the oxide, but little is known about the atomic mechanisms of high temperature oxidation. The present paper describes current progress on crystallographic aspects of aluminum oxidation. The 99.999% pure, polycrystalline aluminum was chemically polished and oxidized in 1 atm air at either 550°C or 600°C for times from 0.5 hr to 4 weeks. Cross-sectional specimens were prepared by forming a sandwich with epoxy, followed by mechanical polishing and then argon ion milling. High resolution images were recorded in a <110>oxide zone-axis orientation with a JE0L JEM 200CX microscope operated at 200 keV.

Design of a UHV STEM for Through-The-Lens Electron Spectroscopy

1990 ◽  
Vol 48 (2) ◽  
pp. 380-381
Author(s):  
A. J. Bleeker ◽  
P. Kruit
Keyword(s):  
Secondary Electron ◽  
High Vacuum ◽  
Secondary Electron Emission ◽  
Auger Spectroscopy ◽  
Scanning Transmission Electron Microscope ◽  
Point Of View ◽  
Ultra High Vacuum ◽  
Scanning Transmission ◽  
Auger Spectra ◽  
Coincidence Measurements

Combining of the high spatial resolution of a Scanning Transmission Electron Microscope and the wealth of information from the secondary electrons and Auger spectra opens up new possibilities for materials research. In a prototype instrument at the Delft University of Technology we have shown that it is possible from the optical point of view to combine STEM and Auger spectroscopy [1]. With an Electron Energy Loss Spectrometer attached to the microscope it also became possible to perform coincidence measurements between the secondary electron signal and the EELS signal. We measured Auger spectra of carbon aluminium and Argon gas showing energy resolutions better than 1eV [2]. The coincidence measurements on carbon with a time resolution of 5 ns yielded basic insight in secondary electron emission processes [3]. However, for serious Auger spectroscopy, the specimen needs to be in Ultra High Vacuum. ( 10−10 Torr ). At this moment a new setup is in its last phase of construction.

Ultrastructural Features of Normal and Diseased Hair Revealed by Ion Beam Etching and Freeze Fracture

1975 ◽  
Vol 33 ◽  
pp. 358-359
Author(s):  
M. Spector ◽  
A. C. Brown
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Ectodermal Dysplasia ◽  
Ion Beam ◽  
Freeze Fracture ◽  
Ion Current ◽  
Ion Beam Etching ◽  
Pili Torti ◽  
Argon Ion ◽  
Scanning Electron

Ion beam etching and freeze fracture techniques were utilized in conjunction with scanning electron microscopy to study the ultrastructure of normal and diseased human hair. Topographical differences in the cuticular scale of normal and diseased hair were demonstrated in previous scanning electron microscope studies. In the present study, ion beam etching and freeze fracture techniques were utilized to reveal subsurface ultrastructural features of the cuticle and cortex.Samples of normal and diseased hair including monilethrix, pili torti, pili annulati, and hidrotic ectodermal dysplasia were cut from areas near the base of the hair. In preparation for ion beam etching, untreated hairs were mounted on conducting tape on a conducting silicon substrate. The hairs were ion beam etched by an 18 ky argon ion beam (5μA ion current) from an ETEC ion beam etching device. The ion beam was oriented perpendicular to the substrate. The specimen remained stationary in the beam for exposures of 6 to 8 minutes.

High-resolution transmission electron microscopic study of highly oxygen doped silicon layer

1989 ◽  
Vol 47 ◽  
pp. 692-693
Author(s):  
H. Takaoka ◽  
M. Tomita ◽  
T. Hayashi
Keyword(s):  
High Resolution ◽  
Oxygen Concentration ◽  
Silicon Layer ◽  
Detailed Structure ◽  
Electron Microscopic ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Doped Silicon ◽  
Argon Ion

High resolution transmission electron microscopy (HRTEM) is the effective technique for characterization of detailed structure of semiconductor materials. Oxygen is one of the important impurities in semiconductors. Detailed structure of highly oxygen doped silicon has not clearly investigated yet. This report describes detailed structure of highly oxygen doped silicon observed by HRTEM. Both samples prepared by Molecular beam epitaxy (MBE) and ion implantation were observed to investigate effects of oxygen concentration and doping methods to the crystal structure.The observed oxygen doped samples were prepared by MBE method in oxygen environment on (111) substrates. Oxygen concentration was about 1021 atoms/cm3. Another sample was silicon of (100) orientation implanted with oxygen ions at an energy of 180 keV. Oxygen concentration of this sample was about 1020 atoms/cm3 Cross-sectional specimens of (011) orientation were prepared by argon ion thinning and were observed by TEM at an accelerating voltage of 400 kV.

The microstructure of a TiB2/Ti-47 Al composite material

1989 ◽  
Vol 47 ◽  
pp. 674-675
Author(s):  
O. Popoola ◽  
A.H. Heuer ◽  
P. Pirouz
Keyword(s):  
Composite Material ◽  
Ion Beam ◽  
Chemical Properties ◽  
Intermetallic Alloys ◽  
Transmission Electron ◽  
Diamond Polishing ◽  
Al Composite ◽  
The Matrix ◽  
Argon Ion ◽  
And Chemical Properties

The addition of fibres or particles (TiB2, SiC etc.) into TiAl intermetallic alloys could increase their toughness without compromising their good high temperature mechanical and chemical properties. This paper briefly discribes the microstructure developed by a TiAl/TiB2 composite material fabricated with the XD™ process and forged at 960°C.The specimens for transmission electron microscopy (TEM) were prepared in the usual way (i.e. diamond polishing and argon ion beam thinning) and examined on a JEOL 4000EX for microstucture and on a Philips 400T equipped with a SiLi detector for microanalyses.The matrix was predominantly γ (TiAl with L10 structure) and α2(TisAl with DO 19 structure) phases with various morphologies shown in figure 1.

Low Energy Ar Ion Milling of FIB TEM Specimens from 14 nm and Future FinFET Technologies

2018 ◽  
Author(s):  
C.S. Bonifacio ◽  
P. Nowakowski ◽  
M.J. Campin ◽  
M.L. Ray ◽  
P.E. Fischione
Keyword(s):  
Field Effect Transistor ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Ion Milling ◽  
Transmission Electron ◽  
High Resolution Tem ◽  
Effect Transistor ◽  
20 Nm ◽  
Argon Ion

Abstract Transmission electron microscopy (TEM) specimens are typically prepared using the focused ion beam (FIB) due to its site specificity, and fast and accurate thinning capabilities. However, TEM and high-resolution TEM (HRTEM) analysis may be limited due to the resulting FIB-induced artifacts. This work identifies FIB artifacts and presents the use of argon ion milling for the removal of FIB-induced damage for reproducible TEM specimen preparation of current and future fin field effect transistor (FinFET) technologies. Subsequently, high-quality and electron-transparent TEM specimens of less than 20 nm are obtained.

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