Modeling Fluctuations in the Growth Rate of a Single Crystal

2000 ◽  
pp. 253-265
Author(s):  
L. T. Fan ◽  
S. T. Chou ◽  
W. Y. Chen ◽  
M. Bai ◽  
J. P. Hsu
Keyword(s):  
Growth Rate ◽  
Single Crystal

ФОРМИРОВАНИЕ ПЕРЕХОДНОГО СЛОЯ ALN НА ТЕМПЛЕЙТАХ 3С-SIC/SI(111) МЕТОДОМ АММИАЧНОЙ МОЛЕКУЛЯРНО-ЛУЧЕВОЙ ЭПИТАКСИИ

2020 ◽  
Vol 96 (3s) ◽  
pp. 148-153
Author(s):  
С.Д. Федотов ◽  
А.В. Бабаев ◽  
В.Н. Стаценко ◽  
К.А. Царик ◽  
В.К. Неволин
Keyword(s):  
Crystal Structure ◽  
Growth Rate ◽  
Low Temperature ◽  
Surface Morphology ◽  
Single Crystal ◽  
Root Mean Square Roughness ◽  
Rate Variation ◽  
Mean Square ◽  
Nucleation Layer ◽  
Low Temperature Epitaxy

Представлены результаты изучения морфологии поверхности и структуры слоев AlN, сформированных аммиачной МЛЭ на темплейтах 3C-SiC/Si(111) on-axis- и 4° off-axis-разориентации. Опробован технологический режим низкотемпературной эпитаксии зародышевого слоя AlN на поверхности 3C-SiC(111). Среднеквадратичная шероховатость поверхности (5 х 5 мкм) слоев AlN толщиной 150 ± 50 нм составила 2,5-3,5 нм на темплейтах 3C-SiC/Si(111) on-axis и 3,3-3,5 нм на 4° off-axis. Показано уменьшение шероховатости смачивающего слоя AlN при изменении скорости роста. Получены монокристаллические слои AlN(0002) со значениями FWHM (ω-геометрия) 1,4-1,6°. The paper presents the surface morphology and crystal structure of AlN layers formed by ammonia MBE on 3C-SiC/Si(111) on-axis and 4° off-axis disorientation. It offers the technological approach of low-temperature epitaxy of the AlN nucleation layer on the 3C-SiC (111) surface. Root mean square roughness (5 х 5 |xm) of AlN layers with thickness of 150 ± 50 nm was 2,5-3,5 nm onto on-axis templates and 3.3-3.5 nm onto 4° off-axis. It appears that the RMS roughness of the AlN surface is changing with the growth rate variation. Single-crystal AlN(0002) layers with FWHM values (ω-geometry) of 1.4-1.6° have been obtained.

Measurement of growth rates for single crystals and pressed tablets of CuSO4.5 H2O on a rotating disc

1989 ◽  
Vol 54 (11) ◽  
pp. 2951-2961 ◽  
Author(s):  
Miloslav Karel ◽  
Jaroslav Nývlt
Keyword(s):  
Growth Rate ◽  
Single Crystal ◽  
Single Crystals ◽  
Growth Rates ◽  
Diffusion Coefficients ◽  
Preferred Orientation ◽  
Rotating Disc ◽  
Dissolution Rates ◽  
Rates Of Growth ◽  
Good Agreement

Measured growth and dissolution rates of single crystals and tablets were used to calculate the overall linear rates of growth and dissolution of CuSO4.5 H2O crystals. The growth rate for the tablet is by 20% higher than that calculated for the single crystal. It has been concluded that this difference is due to a preferred orientation of crystal faces on the tablet surface. Calculated diffusion coefficients and thicknesses of the diffusion and hydrodynamic layers in the vicinity of the growing or dissolving crystal are in good agreement with published values.

A Mechanism of Polycrystallization in Fully Lamellar Ti-48Al-8Nb Single Crystal Alloy Aged at Elevated Temperatures

2002 ◽  
Vol 753 ◽  
Author(s):  
Yukinori Yamamoto ◽  
Masao Takeyama ◽  
Takashi Matsuo
Keyword(s):  
Growth Rate ◽  
Diffusion Coefficient ◽  
Single Crystal ◽  
Grain Growth ◽  
Elevated Temperatures ◽  
Volume Diffusion ◽  
Activation Enthalpy ◽  
Lamellar Microstructure ◽  
Aged Sample ◽  
Fully Lamellar

ABSTRACTPolycrystallization mechanism of a fully lamellar microstructure during aging at 1473 and 1273 K has been examined using Ti-48Al-8Nb fully lamellar single crystal, which consists mostly of γ/γ interfaces (variant, perfect-twin and pseudo-twin boundaries). After a certain period of aging, a few γ grains are formed within the lamellae and the lamellar microstructure collapses rapidly to become a γ grained microstructure at both temperatures. An EBSP analysis for aged sample revealed that most of the grains follow the orientation of variant domains in the lamellar microstructure. A kinetic analysis of the grain growth during aging revealed that the activation enthalpy of the growth rate is estimated to be 390 kJ/mol, which is very close to that for volume diffusion coefficient of Al and Nb in γ-TiAl. Based on the results, it is concluded that the formation of the grains is attributed to coarsening of variant domains within the lamellar plates and coalescence of the same variant domains across the lamellae, leading to a γ grained microstructure following the orientation of variant domains. These reactions also make the number of the variant domains decrease during aging, which remains only two variant domains with perfect-twin relationship.

Estimation of Applied Stress at Fatigue Cracks of a Single Crystal Superalloy

2020 ◽  
Author(s):  
Daisuke Kobayashi ◽  
Katsuhiro Takama ◽  
Tomihiko Ikeda
Keyword(s):  
Growth Rate ◽  
Fatigue Crack ◽  
Crack Growth Rate ◽  
Fatigue Crack Growth ◽  
Fracture Surface ◽  
Single Crystal ◽  
Crack Growth ◽  
Applied Stress ◽  
Fatigue Crack Growth Rate ◽  
Single Crystal Superalloy

Abstract Needless to say, it is important to estimate the stress applied to a material when conducting failure analysis. In recent years, a material assessment method using electron back-scatter diffraction (EBSD) has been developed. It has been reported that a characteristic misorientation distribution corresponding to the fracture mode is seen in cross-sectional EBSD observation near the fracture surface of a Ni-based superalloy. Furthermore, the authors discovered EBSD striations on the crack cross-section, which is formed with each fatigue crack growth during a turbine shut-down process. This was discovered in misorientation analysis on a single-crystal superalloy blade used in a commercial land-based gas turbine. Since Ni-based superalloys have high deformation resistance, they do not undergo enough ductile deformation to form striations at the crack tip on the fracture surface during fatigue crack growth, and, as a result, striations corresponding to cyclic loadings are rarely observed in fractography. Even in such a Ni-based superalloy with brittle crack growth, the fatigue crack growth rate and the applied stress can be estimated by measuring EBSD striation spacing in misorientation analysis. However, a practical problem in assessment is that the resolution limit fixed with field emission scanning electron microscopes (FE-SEM) determine the range in which crack growth rate can be assessed. Hence, it is difficult to clearly discriminate the EBSD striations when the fatigue crack growth rate is too low, such as in the low stress intensity factor range (ΔK) region. The applied stress can be calculated from ΔK. Therefore, in this paper, in order to estimate the applied stress during fatigue crack growth, we focused on estimating ΔK by measuring the plastic zone size along the crack growth.

scholarly journals Effect of Composition on the Growth of Single Crystals of (1−x)(Na1/2Bi1/2)TiO3-xSrTiO3 by Solid State Crystal Growth

Materials ◽  
2019 ◽  
Vol 12 (15) ◽  
pp. 2357 ◽  
Author(s):  
Le ◽  
Fisher ◽  
Moon
Keyword(s):  
Growth Rate ◽  
Crystal Growth ◽  
Solid State ◽  
Single Crystal ◽  
Single Crystals ◽  
Grain Growth ◽  
Ceramic Powder ◽  
Single Crystal Growth ◽  
Crystal Growth Rate ◽  
Mixed Control

The (1−x)(Na1/2Bi1/2)TiO3-xSrTiO3 (NBT-100xST) system is a possible lead-free candidate for actuator applications because of its excellent strain vs. electric field behaviour. Use of single crystals instead of polycrystalline ceramics may lead to further improvement in piezoelectric properties but work on single crystal growth in this system is limited. In particular, the effect of composition on single crystal growth has yet to be studied. In this work, single crystals of (NBT-100xST) with x = 0.00, 0.05, 0.10 and 0.20 were grown using the method of Solid State Crystal Growth. [001]-oriented SrTiO3 single crystal seeds were embedded in (NBT-100xST) ceramic powder, which was then pressed to form pellets and sintered at 1200 °C for 5 min–50 h. Single crystal growth rate, matrix grain growth rate and sample microstructure were examined using scanning and transmission electron microscopy. The results indicate that the highest single crystal growth rate was obtained at x = 0.20. The mixed control theory of grain growth is used to explain the single crystal and matrix grain growth behaviour.

Growth of Large Diameter 4H-SiC by TSSG Technique

2013 ◽  
Vol 740-742 ◽  
pp. 65-68 ◽  
Author(s):  
Kazuhiko Kusunoki ◽  
N. Yashiro ◽  
Nobuhiro Okada ◽  
Kouji Moriguchi ◽  
Kazuhito Kamei ◽  
...  
Keyword(s):  
Growth Rate ◽  
Fluid Flow ◽  
Single Crystal ◽  
Large Diameter ◽  
High Growth ◽  
High Growth Rate ◽  
Solution Growth ◽  
Morphological Stability ◽  
Control Member ◽  
Top Seeded Solution Growth

4H-SiC single crystal with 3-inch diameter was grown by top seeded solution growth (TSSG) technique. We used a new convection control member called “Immersion Guide (IG)” which causes the high and homogenous fluid flow in the solution. As a result, we achieved relatively high growth rate and morphological stability

scholarly journals Modeling the facet growth rate dispersion of β l-glutamic acid—Combining single crystal experiments with nD particle size distribution data

2015 ◽  
Vol 133 ◽  
pp. 30-43 ◽  
Author(s):  
David R. Ochsenbein ◽  
Stefan Schorsch ◽  
Fabio Salvatori ◽  
Thomas Vetter ◽  
Manfred Morari ◽  
...  
Keyword(s):  
Growth Rate ◽  
Particle Size ◽  
Particle Size Distribution ◽  
Glutamic Acid ◽  
Single Crystal ◽  
Size Distribution ◽  
Distribution Data ◽  
Facet Growth

Growth of SiC Single Crystal from Si-C-(Co, Fe) Ternary Solution

2006 ◽  
Vol 527-529 ◽  
pp. 115-118 ◽  
Author(s):  
Nobuyoshi Yashiro ◽  
Kazuhiko Kusunoki ◽  
Kazuhito Kamei ◽  
Mitsuhiro Hasebe ◽  
Toru Ujihara ◽  
...  
Keyword(s):  
Growth Rate ◽  
Silicon Carbide ◽  
Single Crystal ◽  
Grown Crystal ◽  
Crystalline Silicon ◽  
The Self ◽  
Ternary Solution ◽  
Single Crystalline Silicon ◽  
Carbon Solubility ◽  
Ternary Solutions

We carried out the growth of single crystalline silicon carbide (SiC) from Si-C-X (X= Co, Fe) ternary solutions. These ternary solutions are expected to show large carbon solubility compared with Si solvent (self-flux) by means of CALPHAD (CALculation of PHAse Diagrams) method. We investigated the growth rate and the polytype of the grown crystal from the ternary solutions. Then we found that the growth rate from the ternary solutions is much larger than that from the self-flux. The growth rate from Si-C-Co (Si-C-Fe) system was about 6mm/hr (12mm/hr) while that from the self-flux was only 2mm/hr. The grown crystal from the ternary solutions is classified into 6H that takes over the seed polytype.

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