scholarly journals Coupled NEGF-PSO method for maximizing the current ratio of CNTFETs based on oxide thickness optimization

2021 ◽  
Author(s):  
Amin Ghasemi Nejad Raeini ◽  
Zoheir Kordrostami ◽  
Samaneh Hamedi
Keyword(s):  
Oxide Thickness ◽  
Thickness Optimization ◽  
Current Ratio

scholarly journals Coupled NEGF-PSO Method for Maximizing the Current Ratio of CNTFETs Based on Oxide Thickness Optimization

2021 ◽  
Author(s):  
Amin Ghasemi Nejad Raeini ◽  
Zoheir Kordrostami ◽  
Samaneh Hamedi
Keyword(s):  
Field Effect Transistors ◽  
Cutoff Frequency ◽  
Pso Algorithm ◽  
Oxide Thickness ◽  
Performance Parameters ◽  
Thickness Optimization ◽  
Current Ratio ◽  
Maximum Current ◽  
Independent Variable ◽  
Channel Lengths

Abstract Carbon nanotube field-effect transistors (CNTFETs) with optimized oxide thicknesses have been proposed. The optimum oxide thickness that provides the maximum current ratio (on/off ratio) has been calculated for each design. The effect of oxide thickness on the on/off ratio has been investigated by changing its value as the independent variable and calculating on state and off state currents. PSO algorithm has been used to find the exact optimum value of the oxide thickness with the objective of having a maximum current ratio that is one of the most important parameters in switching applications. The optimum insulator thickness is calculated for CNTFETs with different chiral vectors, insulator types, channel lengths and source/drain doping levels. For further study of the CNTFETs, performance parameters such as cutoff frequency and transconductance of the devices have also been calculated and studied. The results of the paper show that the CNTFET designers should select the oxide thickness very carefully not only based on reported values in other works. Each design requires its own optimum oxide thickness which provides the maximum on/off current ratio only for that design.

Comparative Analysis of Control Coefficients on the Performance of CNTFET Under Different Parameters

2016 ◽  
Vol 15 (03) ◽  
pp. 1640005 ◽  
Author(s):  
Safayat-Al Imam ◽  
Nasheen Kalam ◽  
Sharmin Abdullah
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Oxide Thickness ◽  
Steady State Response ◽  
Control Coefficient ◽  
Current Ratio ◽  
State Response ◽  
Gate Control ◽  
Control Coefficients ◽  
Linear Decay

This paper deals with the performance of both gate and drain control coefficients to analyze the behavior of carbon nanotube field effect transistors (CNTFETs) under ballistic conditions and based on the change of different parameter value, such as oxide thickness of structure and temperature variation. A thorough study of both gate and drain control coefficient effects on the performance of CNTFETs has been conducted under different temperature and oxide layers and the output of the device has been analyzed through different parameters. Higher values of control coefficient help to attain larger transconductance by the increasing temperatures. For a fixed value of control coefficient, 4[Formula: see text]nm thickness of oxide has a transconductance of [Formula: see text] 4.5 [Formula: see text] 10[Formula: see text] S/m. Smaller oxide layer thickness has higher slope of increment in transconductance value. ON-state current to leakage current ratio shows a steady state response toward increment of gate control coefficient. Also, increment of oxide thickness has an adverse effect on current ratio, while a linear decay of current ratio is observed with the increased value of drain controlled one. Drain-induced battery lowering (DIBL) effect decreases with the value of gate control one and increases with the drain control coefficient. In this way, the optimum value for both the control coefficients has to be considered in order to perform well.

scholarly journals Design and Simulation of Silicon Nanowire Tunnel Field Effect Transistor

2021 ◽  
Author(s):  
Parveen Kumar ◽  
Balwinder Raj
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Oxide Thickness ◽  
Doping Profile ◽  
Subthreshold Slope ◽  
Current Ratio ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor ◽  
Nanowire Structure

This paper analyses the different parameters of tunnel field-effect transistor (TFET) based on silicon Nanowire in vertical nature by using a Gaussian doping profile. The device has been designed using an n-channel P+-I-N+ structure for tunneling junction of TFET with gate-all-around (GAA) Nanowire structure. The gate length has been taken as 100 nm using silicon Nanowire to obtain the various parameters such as ON-current (ION), OFF-current (IOFF), current ratio, and Subthreshold slope (SS) by applying different values of work function at the gate, the radius of Nanowire and oxide thickness of the device. The simulations are performed on Silvaco TCAD which gives a better parametric analysis over conventional tunnel field-effect transistor.

ANALISIS EFISIENSI PENGELOLAAN MODAL KERJA PADA PERUSAHAAN DAERAH AIR MINUM (PDAM) KABUPATEN BANGGAI

2017 ◽  
Vol 1 (2) ◽  
pp. 21
Author(s):  
IRWAN MORIDU
Keyword(s):  
Profit Margin ◽  
Current Ratio ◽  
Return On Equity

Penelitian ini bertujuan untuk mengetahui apakah penggunaan modal kerja pada Perusahaan Daerah Air Minum Kabupaten Banggai sudah efisien selama tahun 2013 hingga 2016, data dianalisis secara deskriptif kuantitatif dengan menggunakan rasio aktivitas. Penelitian ini dilaksankan pada pada Perusahaan Daerah Air Minum Kabupaten Banggai dari bulan juni hingga agustus 2017 dengan menggunakan metode wawancara, observasi dan dokumentasi.Berdasarkan hasil penelitian dari hasil perhitungan Rasio Likuiditas yang terdiri dari Current Ratio, Quick Ratio dan Cash Ratio dan Rasio Rentabilitas yang terdiri dari Gross Profit Margin, Profit Margin, Return On Asset, dan Return On Equity, secara keseluruhan perhitungan rasio dalam pengukuran efisiensi penggunaan modal kerja pada Perusahaan Daerah Air Minum Kabupaten Banggai selama kurun waktu 2013 sampai dengan tahun 2016 adalah kurang efisien.

The Effect of Current Ratio and Debt to Asset Ratio on Net Profit Margin and Stock Prices: A Study of Basic Industry and Chemicals Companies

2020 ◽  
pp. 282-294
Author(s):  
Sudirman S ◽  
Muhammad Wahyuddin Abdullah ◽  
Muhammad Obie
Keyword(s):  
Stock Prices ◽  
Stock Exchange ◽  
Secondary Data ◽  
Profit Margin ◽  
Current Ratio ◽  
Industry Sector ◽  
Basic Industry ◽  
Net Profit ◽  
Equity Ratio ◽  
Index Value

This study examined the effect of current ratio and debt to asset ratio on net profit margin and stock prices of the sector basic industry and chemicals companies listed on the Indonesia Stock Exchange in the period 2015-2019. The object of research was the stock prices of companies in the Basic Industry and Chemicals sector, which have been published through the official website of the Indonesian capital market. It was used secondary data derived from the monthly statistics, including Current Ratio data, Net Profit Margin, Debt to Asset Ratio, and data on closing prices for the period 2015-2019. In analyzing data, it was used path analysis of secondary data obtained from the basic industry sector financial statements of 60 companies. The company's performance in this sector is considered quite good when seen from the movement of the index value in the last five years. The results show that direct current ratio had a positive and significant effect on the net profit margin, and the debt to equity ratio did not significantly influence the net profit margin. The current ratio has a positive and significant effect on stock prices, and the debt to equity ratio has a negative and not significant effect on stock prices. In contrast, the net profit margin has a significant effect on stock prices in the basic industry sector companies on the Indonesia Stock Exchange. Indirectly the current ratio has a positive and significant effect on stock prices. In contrast, the debt to asset ratio has a negative and not significant effect on the company's stock prices in the basic industry sector on the Indonesia Stock Exchange.

PENGARUH RETURN ON EQUITY (ROE) DAN CURRENT RATIO (CR) TERHADAP HARGA SAHAM PERUSAHAAN TELEKOMUNIKASI YANG TERDAFTAR DI BURSA EFEK INDONESIA PERIODE TAHUN 2006-2011

2019 ◽  
Vol 9 (2B) ◽  
pp. 39
Author(s):  
Syarief Gerald Prasetya
Keyword(s):  
Current Ratio ◽  
Return On Equity

Perkembangan Return On Equity (ROE) pada perusahaan Telekomunikasi yang terdaftar di Bursa Efek Indonesia periode tahun 2006-2011 cenderung mengalami fluktuasi. Fluktuasi yang terjadi pada Return On Equity (ROE) setiap perusahaan Telekomunikasi ini disebabkan oleh beberapa faktor, seperti keadaan politik, ekonomi, kebijakan pemerintah maupun keadaan internal perusahaan sendiri. Perkembangan Current Ratio (CR) pada perusahaan Telekomunikasi yang terdaftar di Bursa Efek Indonesia periode tahun 2006-2011 mengalami fluktuasi. Apabila dilihat, pada tahun 2007 Current Ratio setiap perusahaan cenderung mengalami fluktuasi. Walaupun beberapa periode mengalami penurunan yang disebabkan oleh beberapa faktor, seperti keadaan politik, rasio keuangan, kebijakan pemerintah maupun keadaan internal perusahaan sendiri. Perkembangan Harga Saham pada perusahaan Telekomunikasi yang terdaftar di Bursa Efek Indonesia periode tahun 2006-2011 cenderung mengalami fluktuasi. Naik turunnya pengembalian modal maupun kemampuan dari masing-masing perusahaan Telekomunikasi dalam memenuhi kewajiban hutang jangka pendeknya mempengaruhi harga saham. Sedangkan kondisi luar perusahaan bisa disebabkan oleh beberapa hal, seperti kondisi ekonomi Negara secara umum, kebijaka-kebijakan pemerintah maupun situasi dan kondisi pasar saham dalam skala global.Berdasarkan hasil analisis, dapat disimpulkan bahwa terdapat pengaruh Return On Equity (ROE) dan Current Ratio (CR) terhadap Harga Saham. Analisis pengaruh Return On Equity terhadap harga saham secara parsial menunjukkan hubungan yang sangat rendah dan tidak searah (negative) dengan nilai koefisien korelasi 0,124. Berdasarkan pengujian hipotesis, Return On Equity tidak berpengaruh terhadap harga saham. Artinya bahwa berapapun nilai dari Return On Equity pengaruhnya tidak berarti pada kenaikkan dan penurunan harga saham pada perusahaan Telekomunikasi yang terdaftar di Bursa Efek Indonesia periode tahun 2006-2011. Analisis pengaruh Current Ratio terhadap harga saham secara parsial menunjukkan hubungan yang sangat rendah dan terbalik (negative) dengan nilai koefisien korelasi sebesar -0,256. Berdasarkan pengujian hipotesis, Current Ratio tidak berpengaruh terhadap harga saham. Artinya bahwa berapapun nilai dari Current Ratio pengaruhnya tidak berarti pada kenaikan dan penurunan harga saham pada perusahaan Telekomunikasi yang terdaftar di Bursa Efek Indonesia periode tahun 2006-2011.Analisis pengaruh Return On Equity dan Current Ratio secara simultan atau bersama-sama tidak berpengaruh signifikan terhadap harga saham. Kata Kunci : Return On Equity (ROE), Current Ratio (CR). 

The Effect of Roughness Features on Mos Surface Electric Field and Fowler-Nordheim Tunneling Behavior

1997 ◽  
Vol 473 ◽  
Author(s):  
Heng-Chih Lin ◽  
Edwin C. Kan ◽  
Toshiaki Yamanaka ◽  
Simon J. Fang ◽  
Kwame N. Eason ◽  
...  
Keyword(s):  
Electric Field ◽  
Three Dimensional ◽  
Tunneling Current ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
Interface Roughness ◽  
Normal Electric Field ◽  
Surface Electric Field ◽  
Tunneling Behavior ◽  
Nordheim Tunneling

ABSTRACTFor future CMOS GSI technology, Si/SiO2 interface micro-roughness becomes a non-negligible problem. Interface roughness causes fluctuations of the surface normal electric field, which, in turn, change the gate oxide Fowler-Nordheim tunneling behavior. In this research, we used a simple two-spheres model and a three-dimensional Laplace solver to simulate the electric field and the tunneling current in the oxide region. Our results show that both quantities are strong functions of roughness spatial wavelength, associated amplitude, and oxide thickness. We found that RMS roughness itself cannot fully characterize surface roughness and that roughness has a larger effect for thicker oxide in terms of surface electric field and tunneling behavior.

Silicon Surface Chemical Treatments in Oxide/Nitride Dielectric Stack Properties

2002 ◽  
Vol 716 ◽  
Author(s):  
D. Jacques ◽  
S. Petitdidier ◽  
J.L. Regolini ◽  
K. Barla
Keyword(s):  
Oxygen Content ◽  
Oxide Thickness ◽  
Morphological Data ◽  
Electrical Characteristics ◽  
Electrical Measurements ◽  
Chemical Cleaning ◽  
Force Microscopy ◽  
Chemical Treatments ◽  
Atomic Force ◽  
Interfacial Oxygen

AbstractOxide/Nitride dielectric stack is widely used as the standard dielectric for DRAM capacitors. The influence of the chemical cleaning prior to the stack formation has been studied in this work. As a result, morphological data such as stack surface roughness (Atomic Force Microscopy) and silicon nitride (SiN) incubation time for growth are comparable for all the studied cases on <Si>. However, Tof-SIMS exhibits different oxygen content at the Si/stack interface following the different chemical treatments. Electrical measurements show comparable C-V and I-V results, for the same Equivalent Oxide Thickness (same capacitance at strong accumulation i.e.-3V) while the different studied interfaces bring different interface states density with lower values for higher interfacial oxygen content. For DRAM applications, a clear improvement in electrical characteristics is obtained under low interfacial oxygen content conditions. Results are compared in embedded-DRAM cells for which we developed an industrially compatible dielectric deposition sequence to obtain minimum leakage current with maximum specific capacitance and no particular linking constraints.

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