Optimization of Thick Photoresist for Uniform Thickness in RF MEMS Applications

Author(s):  
Anuroop Bajpai ◽  
Kamaljit Rangra ◽  
Deepak Bansal
2014 ◽  
Vol 609-610 ◽  
pp. 784-788
Author(s):  
Nai Bo Zhang ◽  
Li Rong Mei

This paper presents a RF MEMS shunt switch with design, fabrication and measurement. The designed switch that avoids unstable and collapse could be used to RF MEMS devices. The photoresist is used as sacrifice layer and switch material is Aluminum. To make the surface of MEMS switch smooth, the method of multiple spreading thick photoresist and dry etching is proposed. A size of 130×230 (μm)2 MEMS switch with 1 μm height and 0.45 μm unevenness is demonstrated in a configuration. Continuous tuning of 1 μm is achieved by loading 33 volt DC voltage between MEMS switch beam and signal line. The RF performance shows 0.1-0.4dB insertion loss and 18-30 dB return loss of the switch. The fabrication, design, and measurement results of the MEMS switch are detailed.


Author(s):  
W. L. Bell

Disappearance voltages for second order reflections can be determined experimentally in a variety of ways. The more subjective methods, such as Kikuchi line disappearance and bend contour imaging, involve comparing a series of diffraction patterns or micrographs taken at intervals throughout the disappearance range and selecting that voltage which gives the strongest disappearance effect. The estimated accuracies of these methods are both to within 10 kV, or about 2-4%, of the true disappearance voltage, which is quite sufficient for using these voltages in further calculations. However, it is the necessity of determining this information by comparisons of exposed plates rather than while operating the microscope that detracts from the immediate usefulness of these methods if there is reason to perform experiments at an unknown disappearance voltage.The convergent beam technique for determining the disappearance voltage has been found to be a highly objective method when it is applicable, i.e. when reasonable crystal perfection exists and an area of uniform thickness can be found. The criterion for determining this voltage is that the central maximum disappear from the rocking curve for the second order spot.


Author(s):  
R.D. Leapman ◽  
S.B. Andrews

Elemental mapping of biological specimens by electron energy loss spectroscopy (EELS) can be carried out both in the scanning transmission electron microscope (STEM), and in the energy-filtering transmission electron microscope (EFTEM). Choosing between these two approaches is complicated by the variety of specimens that are encountered (e.g., cells or macromolecules; cryosections, plastic sections or thin films) and by the range of elemental concentrations that occur (from a few percent down to a few parts per million). Our aim here is to consider the strengths of each technique for determining elemental distributions in these different types of specimen.On one hand, it is desirable to collect a parallel EELS spectrum at each point in the specimen using the ‘spectrum-imaging’ technique in the STEM. This minimizes the electron dose and retains as much quantitative information as possible about the inelastic scattering processes in the specimen. On the other hand, collection times in the STEM are often limited by the detector read-out and by available probe current. For example, a 256 x 256 pixel image in the STEM takes at least 30 minutes to acquire with read-out time of 25 ms. The EFTEM is able to collect parallel image data using slow-scan CCD array detectors from as many as 1024 x 1024 pixels with integration times of a few seconds. Furthermore, the EFTEM has an available beam current in the µA range compared with just a few nA in the STEM. Indeed, for some applications this can result in a factor of ~100 shorter acquisition time for the EFTEM relative to the STEM. However, the EFTEM provides much less spectral information, so that the technique of choice ultimately depends on requirements for processing the spectrum at each pixel (viz., isolated edges vs. overlapping edges, uniform thickness vs. non-uniform thickness, molar vs. millimolar concentrations).


2010 ◽  
Vol 130 (6) ◽  
pp. 247-252
Author(s):  
Michihiko Nishigaki ◽  
Toshihiko Nagano ◽  
Hiroshi Ono ◽  
Takashi Kawakubo ◽  
Kazuhiko Itaya
Keyword(s):  
Rf Mems ◽  

PIERS Online ◽  
2008 ◽  
Vol 4 (4) ◽  
pp. 433-436 ◽  
Author(s):  
Yaping Liang ◽  
Calvin W. Domier ◽  
Neville C. Luhmann, Jr.

2020 ◽  
Vol 12 ◽  
Author(s):  
Pampa Debnath ◽  
Ujjwal Mondal ◽  
Arpan Deyasi

Aim:: Computation of loss factors for one-bit RF MEMS switch over Ku, K and Ka-band for two different insulating substrates. Objective:: Numerical investigation of return loss, insertion loss, isolation loss are computed under both actuated and unactuated states for two different insulating substrates of the 1-bit RF MEMS switch, and corresponding up and down-capacitances are obtained. Methods:: The unique characteristics of a 1-bit RF MEMS switch of providing higher return loss under both actuated and unactuated states and also of isolation loss with negligible insertion loss makes it as a prime candidate for phase shifter application. This is presented in this manuscript with a keen focus on improvement capability by changing transmission line width, and also of overlap area; where dielectric constant of the substrate also plays a vital role. Results:: The present work exhibits very low down-capacitance over the spectrum whereas considerable amount of up-capacitance. Also when overall performance in terms of all loss parameters are considered, switch provides very low insertion loss, good return loss under actuated state and standard isolation loss. Conclusion:: Reduction of transmission line width of about 33% improved the performance of the switch by increasing isolation loss. Isolation loss of -40 dB is obtained at actuated condition in higher microwave spectra for SiO 2 at higher overlap area. Down capacitance of ~ 1dB is obtained which is novel as compared with other published literature. Moreover, a better combination of both return loss, isolation loss and insertion loss are reported in this present work compared with all other published data so far.


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