Influence of an oxide layer on the hydride embrittlement in zircaloy-4

1993 ◽  
Vol 29 (5) ◽  
pp. 617-622 ◽  
Author(s):  
J.B Bai
Keyword(s):  
Oxide Layer ◽  
Hydride Embrittlement

Structural changes in silicon-on-insulator material during post-implantation annealing

1986 ◽  
Vol 44 ◽  
pp. 736-737
Author(s):  
C. O. Jung ◽  
S. J. Krause ◽  
S.R. Wilson
Keyword(s):  
Integrated Circuits ◽  
Oxide Layer ◽  
High Speed ◽  
Structural Changes ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Quality ◽  
Radiation Hardened ◽  
Post Implantation ◽  
Very High

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.

ffect of Na2WO4 in electrolyte on mechanical properties of oxide layer on Al alloy via plasma electrolytic oxidation

2015 ◽  
Vol 53 (8) ◽  
pp. 535-540 ◽  
Author(s):  
Young Gun Ko ◽  
Dong Hyuk Shin ◽  
Hae Woong Yang ◽  
Yeon Sung Kim ◽  
Joo Hyun Park ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Oxide Layer ◽  
Plasma Electrolytic Oxidation ◽  
Al Alloy ◽  
Electrolytic Oxidation ◽  
Plasma Electrolytic

Correlation Between the Tunnelling Oxide and I-V Curves of MIS Photodiodes

2003 ◽  
Vol 762 ◽  
Author(s):  
H. Águas ◽  
L. Pereira ◽  
A. Goullet ◽  
R. Silva ◽  
E. Fortunato ◽  
...  
Keyword(s):  
Hydrogen Peroxide ◽  
Oxide Layer ◽  
Spectroscopic Ellipsometry ◽  
Chemical Deposition ◽  
Oxide Thickness ◽  
Electrical Performance ◽  
Signal To Noise ◽  
Rectification Factor ◽  
Mis Devices ◽  
The Ideal

AbstractIn this work we present results of a study performed on MIS diodes with the following structure: substrate (glass) / Cr (2000Å) / a-Si:H n+ (400Å) / a-Si:H i (5500Å) / oxide (0-40Å) / Au (100Å) to determine the influence of the oxide passivation layer grown by different techniques on the electrical performance of MIS devices. The results achieved show that the diodes with oxides grown using hydrogen peroxide present higher rectification factor (2×106)and signal to noise (S/N) ratio (1×107 at -1V) than the diodes with oxides obtained by the evaporation of SiO2, or by the chemical deposition of SiO2 by plasma of HMDSO (hexamethyldisiloxane), but in the case of deposited oxides, the breakdown voltage is higher, 30V instead of 3-10 V for grown oxides. The ideal oxide thickness, determined by spectroscopic ellipsometry, is dependent on the method used to grow the oxide layer and is in the range between 6 and 20 Å. The reason for this variation is related to the degree of compactation of the oxide produced, which is not relevant for applications of the diodes in the range of ± 1V, but is relevant when high breakdown voltages are required.

Interactions of Ge Atoms with High- ê Oxide Dielectric Surfaces

2005 ◽  
Vol 879 ◽  
Author(s):  
Scott K. Stanley ◽  
John G. Ekerdt
Keyword(s):  
Oxide Layer ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Temperature Programmed Desorption ◽  
Tungsten Filament ◽  
X Ray ◽  
Dielectric Surfaces ◽  
Temperature Programmed ◽  
The Stability ◽  
Ge Nanocrystals

AbstractGe is deposited on HfO2 surfaces by chemical vapor deposition (CVD) with GeH4. 0.7-1.0 ML GeHx (x = 0-3) is deposited by thermally cracking GeH4 on a hot tungsten filament. Ge oxidation and bonding are studied at 300-1000 K with X-ray photoelectron spectroscopy (XPS). Ge, GeH, GeO, and GeO2 desorption are measured with temperature programmed desorption (TPD) at 400-1000 K. Ge initially reacts with the dielectric forming an oxide layer followed by Ge deposition and formation of nanocrystals in CVD at 870 K. 0.7-1.0 ML GeHx deposited by cracking rapidly forms a contacting oxide layer on HfO2 that is stable from 300-800 K. Ge is fully removed from the HfO2 surface after annealing to 1000 K. These results help explain the stability of Ge nanocrystals in contact with HfO2.

MODELING THE NORMAL SPECTRAL EMISSIVITY OF BRASS H62 AT 800–1100 K DURING OXIDE LAYER GROWTH

2018 ◽  
Vol 49 (15) ◽  
pp. 1445-1458
Author(s):  
Deheng Shi ◽  
Fenghui Zou ◽  
Zunlue Zhu ◽  
Jinfeng Sun
Keyword(s):  
Oxide Layer ◽  
Spectral Emissivity ◽  
Layer Growth ◽  
Normal Spectral Emissivity

Carbon Supports Mitigate Resistivity Limitations in Ni-Mo Alkaline Hydrogen Evolution Electrocatalysts

2018 ◽  
Author(s):  
Rituja Patil ◽  
Aayush Mantri ◽  
Stephen House ◽  
Judith C. Yang ◽  
James McKone
Keyword(s):  
Oxide Layer ◽  
Hydrogen Evolution ◽  
Interfacial Resistance ◽  
Carbon Supports ◽  
Vulcan Carbon

We have studied the composition and morphology of Ni-Mo alloys. These alloys consist of a Ni-rich core surrounded by Mo-rich oxide layer. The HER activity of Ni-Mo alloys was seen to be limited by interfacial resistance rather than kinetic and solution transport. Vulcan carbon, a conductive support mitigate the resistive limitations by providing conductive percolation networks.

An Effective SIMS Methodology for GOI Contamination Analysis

2013 ◽  
Author(s):  
Yanhua Huang ◽  
Lei Zhu ◽  
Kenny Ong ◽  
Hanwei Teo ◽  
Younan Hua
Keyword(s):  
Oxide Layer ◽  
Secondary Ion Mass Spectrometry ◽  
Gate Oxide ◽  
Sample Surface ◽  
Low Energy ◽  
Cross Contamination ◽  
Common Effect ◽  
Sims Analysis ◽  
Secondary Ion ◽  
Lower Background

Abstract Contamination in the gate oxide layer is the most common effect which cause the gate oxide integrate (GOI) issue. Dynamic Secondary Ion Mass Spectrometry (SIMS) is a mature tool for GOI contamination analysis. During the sample preparation, all metal and IDL layers above poly should be removed because the presence of these layers added complexity for the subsequent SIMS analysis. The normal delayering process is simply carried out by soaking the sample in the HF solution. However, the poly surface is inevitably contaminated by surroundings even though it is already a practice to clean with DI rinse and tape. In this article, TOFSIMS with low energy sputter gun is used to clean the sample surface after the normal delayering process. The residue signals also can be monitored by TOF SIMS during sputtering to confirm the cross contamination is cleared. After that, a much lower background desirable by dynamic SIMS. Thus an accurate depth profile in gate oxide layer can be achieved without the interference from surface.

Backside FIB Device Modifications Through the BOX Layer of an SOI Device

2002 ◽  
Author(s):  
Jeffery P. Huynh ◽  
Joseph P. Shannon ◽  
Richard W. Johnson ◽  
Mike Santana ◽  
Thomas Y. Chu ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Oxide Layer ◽  
Cross Section ◽  
Test Structure ◽  
Ring Oscillator ◽  
Oscillator Circuit ◽  
Entire Process ◽  
Oscillator Frequency ◽  
Polysilicon Gate ◽  
Resistance Data

Abstract Modifications directly to a transistor’s source/drain and polysilicon gate through the backside of a SOI device were made. Contact resistance data was obtained by creating contacts through the buried oxide layer of a manufactured test structure. A ring oscillator circuit was modified and the shift in oscillator frequency was measured. Finally, cross section images of the FIB created contacts were presented in the paper to illustrate the entire process.

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