Investigate the interface structure and growth mechanism of high quality ZnO films grown on multilayer graphene layers

2014 ◽  
Vol 301 ◽  
pp. 391-395 ◽  
Author(s):  
Yong Zeng ◽  
Yan Zhao ◽  
Yijian Jiang
Keyword(s):  
Growth Mechanism ◽  
Interface Structure ◽  
Zno Films ◽  
Multilayer Graphene ◽  
High Quality ◽  
Graphene Layers

scholarly journals Growth of Ordered Graphene Ribbons by Sublimation Epitaxy

Crystals ◽  
2018 ◽  
Vol 8 (12) ◽  
pp. 449
Author(s):  
Shuxian Cai ◽  
Xingfang Liu ◽  
Xin Zheng ◽  
Zhonghua Liu
Keyword(s):  
Substrate Surface ◽  
Graphene Film ◽  
Graphene Ribbon ◽  
High Quality ◽  
Graphene Layers ◽  
Force Microscopy ◽  
Layer Graphene ◽  
Micro Raman Spectroscopy ◽  
Atomic Force ◽  
Few Layer Graphene

Ordered graphene ribbons were grown on the surface of 4° off-axis 4H-SiC wafers by sublimation epitaxy, and characterized by using scanning electron microscopy (SEM), atomic force microscopy (AFM) and micro-Raman spectroscopy (μ-Raman). SEM showed that there were gray and dark ribbons on the substrate surface, and AFM further revealed that these ordered graphene ribbons had clear stepped morphologies due to surface step-bunching. It was shown by μ-Raman that the numbers of graphene layers of these two types of regions were different. The gray region was composed of mono- or bilayer ordered graphene ribbon, while the dark region was of tri- or few-layer ribbon. Meanwhile, ribbons were all homogeneous and had a width up to 40 μm and a length up to 1000 μm, without micro defects such as grain boundaries, ridges, or mono- and few-layer graphene mixtures. The results of this study are useful for optimized growth of high-quality graphene film on silicon carbide crystal.

High-quality multilayer graphene on an insulator formed by diffusion controlled Ni-induced layer exchange

2017 ◽  
Vol 111 (24) ◽  
pp. 243104 ◽  
Author(s):  
H. Murata ◽  
N. Saitoh ◽  
N. Yoshizawa ◽  
T. Suemasu ◽  
K. Toko
Keyword(s):  
Multilayer Graphene ◽  
High Quality ◽  
Diffusion Controlled

scholarly journals Nucleation/Growth and Optical Proprieties of Co-doped ZnO Electrodeposited on ITO Substrate

2021 ◽  
Vol 12 (5) ◽  
pp. 6776-6787
Keyword(s):  
Cyclic Voltammetry ◽  
Growth Mechanism ◽  
Supporting Electrolyte ◽  
Saturated Calomel Electrode ◽  
Nucleation And Growth ◽  
Visible Range ◽  
Zno Films ◽  
Doped Zno ◽  
Nucleation And Growth Mechanism ◽  
Co Doped

A Co-doped ZnO layer was prepared by electrodeposition method on indium doped tin oxide (ITO) substrate using a cathodic reduction from nitrate medium with different doping percentages of cobalt. The bath temperature was controlled at 70 °C. The films were cathodically electrodeposited in a bath containing 5 mM Zn(NO3)2. 6H2O, while the source of Co is Co(NO3)2.6H2O where 0.1M KNO3 was used as supporting electrolyte. The nucleation and growth mechanism of Co-doped ZnO nuclei have been studied by cyclic voltammetry and chronoamperometry. The cyclic voltammetry shows that the electrodeposition of ZnO and Co-doped ZnO at a negative potential around -1.0 V versus saturated calomel electrode (SCE) is a quasi-reversible reaction controlled by the diffusion process. Comparing current transients curves obtained by the chronoamperometric method with the theoretical curves of current density j versus t ½ allows us to say that the nucleation is 3D instantaneous, as shown in SEM analysis. The presence of Co does not modify the nucleation and growth mechanism. The XRD patterns show that the substitution of zinc by cobalt does not change the würtzite crystal structure, but the crystallite size decreases with the cobalt percentage. The transmittance spectra indicate that the Co-doped ZnO films are transparent in the visible range. The optical gap increases with the doping percentage of cobalt.

Efficient and direct exfoliation of high-quality Graphene layers in water from different graphite sources and its electrical characterization

NANO ◽  
2021 ◽  
Author(s):  
Naghmeh Gholamalizadeh ◽  
Saeedeh Mazinani ◽  
Majid Abdouss ◽  
Ali Mohammad Bazargan ◽  
Fataneh Fatemi
Keyword(s):  
Electrical Characterization ◽  
High Quality ◽  
Graphene Layers

scholarly journals Ultimate High Conductivity of Multilayer Graphene Examined by Multiprobe Scanning Tunneling Potentiometry on Artificially Grown High-Quality Graphite Thin Film

2019 ◽  
Vol 1 (9) ◽  
pp. 1762-1771
Author(s):  
Hiroyuki Mogi ◽  
Takafumi Bamba ◽  
Mutsuaki Murakami ◽  
Yuki Kawashima ◽  
Masamichi Yoshimura ◽  
...  
Keyword(s):  
Thin Film ◽  
High Conductivity ◽  
Scanning Tunneling ◽  
Multilayer Graphene ◽  
High Quality

scholarly journals Method for determining the adhesion force between graphene and copper

2019 ◽  
Vol 196 ◽  
pp. 00057
Author(s):  
Evgeny Victorovich Boyko ◽  
Ilya Alexeevich Kostogrud ◽  
Dmitry Vladimirovich Smovzh ◽  
Pavel Evgenyevich Matochkin
Keyword(s):  
Crystal Orientation ◽  
Adhesion Force ◽  
Electron Backscatter Diffraction ◽  
Copper Substrate ◽  
Qualitative Assessment ◽  
Multilayer Graphene ◽  
Graphene Layers ◽  
Electron Backscatter ◽  
Graphene Transfer ◽  
Backscatter Diffraction

The paper presents the technique of qualitative assessment of the strength of graphene layers adhesion to the surface of a copper substrate, where they are formed. The technique uses a complex of approved analytical methods: electron backscatter diffraction (EBSD), Raman spectroscopy and optical microscopy. The technique was tested on multilayer graphene grown on a copper grain with crystal orientation (111). The presented method can be used to assess the effectiveness of the methods of graphene transfer from grains with different crystal orientation.

Uniaxial locked growth of high-quality epitaxial ZnO films on -Al2O3

2000 ◽  
Vol 209 (2-3) ◽  
pp. 532-536 ◽  
Author(s):  
P Fons ◽  
K Iwata ◽  
S Niki ◽  
A Yamada ◽  
K Matsubara ◽  
...  
Keyword(s):  
Zno Films ◽  
High Quality

ZnO Films and Crystals on Bulk Silicon and SOI Wafers: Formation, Properties and Applications

2011 ◽  
Vol 276 ◽  
pp. 3-19 ◽  
Author(s):  
Eugene Chubenko ◽  
Alexey Klyshko ◽  
Vitaly Bondarenko ◽  
Marco Balucani ◽  
Anatoly I. Belous ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Electrochemical Deposition ◽  
Electrochemical Process ◽  
Zno Films ◽  
Photovoltaic Devices ◽  
Bulk Silicon ◽  
High Quality ◽  
Hydrothermal Deposition ◽  
Electrochemically Deposited ◽  
Deposition Processes

In present work the investigation of the electrochemical and chemical hydrothermal deposition processes of ZnO on silicon is presented. The influence of the electrochemical process parameters on the characteristics and morphology of the ZnO deposits is analyzed. Electrochemical deposition from non aqueous DMSO solutions on porous silicon buffer layer is also discussed. The details of the chemical hydrothermal deposition from the nitrate bath of high-quality ZnO crystals on silicon substrate are presented. It was shown that morphology and size of synthesized ZnO crystals depends on the temperature of the deposition bath. Differences between photoluminescence of electrochemically deposited ZnO thin films and hydrothermally synthesized crystals are shown. Electrochemically deposited ZnO films demonstrate defect-caused luminescence and hydrothermally grown ZnO crystals shows intensive exciton luminescence band in UV region. Hydrothermal deposition of high-quality ZnO crystals on the surface of electrochemically deposited ZnO seed layer with porous silicon buffer improves photoluminescence properties of the structure which is useful for optoelectronics applications. Possible applications of ZnO as gas sensors and photovoltaic devices are considered. Aspects of ZnO electrochemical deposition on bulk silicon and silicon-on-isolator wafers for integration purposes are discussed.

Characterization and Growth Mechanism of B12As2 Epitaxial Layers Grown on (1-100) 15R-SiC

2008 ◽  
Vol 1069 ◽  
Author(s):  
Hui Chen ◽  
Guan Wang ◽  
Michael Dudley ◽  
Zhou Xu ◽  
James. H. Edgar ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Growth Mechanism ◽  
Heteroepitaxial Growth ◽  
High Quality ◽  
X Ray ◽  
Transmission Electron ◽  
Substrate Choice

ABSTRACTA systematic study is presented of the heteroepitaxial growth of B12As2 on m-plane 15R-SiC. In contrast to previous studies of B12As2 on other substrates, including (100) Si, (110) Si, (111) Si and (0001) 6H-SiC, single crystalline and untwinned B12As2 was achieved on m-plane 15R-SiC. Observations of IBA on m-plane (1100)15R-SiC by synchrotron white beam x-ray topography (SWBXT) and high resolution transmission electron microscopy (HRTEM) confirm the good quality of the films on the 15R-SiC substrates. The growth mechanism of IBA on m-plane 15R-SiC is discussed. This work demonstrates that m-plane 15R-SiC is potentially a good substrate choice to grow high quality B12As2 epilayers.

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