A predictive power sequence equation for vapor pressures of pure organic fluids and partial pressures in multicomponent systems in equilibrium

2020 ◽  
Vol 506 ◽  
pp. 112409
Author(s):  
Otto G. Piringer
Keyword(s):  
Predictive Power ◽  
Multicomponent Systems ◽  
Vapor Pressures ◽  
Partial Pressures ◽  
Power Sequence ◽  
Organic Fluids

Alkali vapor pressures over some simple silicate melts

1983 ◽  
Vol 48 (6) ◽  
pp. 1528-1531 ◽  
Author(s):  
Vincenzo Piacente ◽  
Josef Matoušek
Keyword(s):  
Mass Spectrometric ◽  
Silicate Melts ◽  
Vaporization Enthalpy ◽  
Second Law ◽  
Spectrometric Analysis ◽  
Vapor Pressures ◽  
Average Value ◽  
Partial Pressures ◽  
Principal Species ◽  
Good Agreement

Mass spectrometric analysis of gaseous phase above Na2O.4 SiO2; K2O.4 SiO2 and Na2O.K2O.8 SiO2 melts was used to identify the species observed and to determine their partial pressure values. The principal species observed were the corresponding alkaline species and oxygen. The temperature dependence of sodium and kalium partial pressures was established and corresponding vaporization enthalpy values were calculated by second law treatment of those vapor data. The average value of sodium vaporization enthalpy in binary melt amounts of ΔHT0 = 315 ± 10 kJ mol-1 being in a good agreement with the data published previously. The vaporization enthalpy of potassium ΔHT0 = 142 ± 8 kJ mol-1 is considerably lower with comparison to sodium and does not change if potassium evaporates from binary K2O.4 SiO2 or ternary Na2O.K2O.8 SiO2 melts respectively.

Mass Spectrometric Investigations of the Evaporation of Crystalline Compounds of the System Cs2O-Al2O3-SiO2 Part II: The Compounds CsAlSiO4 and CsAlSi5O12

1980 ◽  
Vol 35 (1) ◽  
pp. 9-13 ◽  
Author(s):  
R. Odoj ◽  
K. Hilpert
Keyword(s):  
Mass Spectrometry ◽  
Mass Spectrometric ◽  
Log P ◽  
Vapor Pressures ◽  
Equilibrium Conditions ◽  
Synthetic Compounds ◽  
High Temperature Mass Spectrometry ◽  
Partial Pressures ◽  
Temperature Ranges ◽  
High Level

Abstract The evaporation of the synthetic compounds CsAlSiO4 and CsAlSi5O12 was studied by high temperature mass spectrometry. The measurements were carried out under equilibrium conditions with Knudsen cells in the temperature ranges 1242 to 1567 K (CsAlSiO4) and 1542 to 1803 K (CsAlSi5O12). The obtained Cs partial pressures are given by the equationslog p (Pa)=-18497/T(K)+11.85(CsAlSiO4)andlog p (Pa)=-26 974/T(K)+14.6(CsAlSi5012).The probable uncertainty of the vapor pressures is ± 43%. The following enthalpies of sub­limation of Cs (g) were computed:⊿Sub H°1405 (CsAlSiO4) =353.6 ± 9.8 kJ mol-1 and⊿Sub H°1673 (CsAlSi5O12) =516.3 ± 18 kJ mol-1.The Cs partial pressures over CsAlSiO4, CsAlSi5O12 and CsAlSi2O6 (see part I of this work [1]) are discussed with respect to their consequences for the final storage of high level radioactive waste.

scholarly journals Vaporization of Ni, Al and Cr in Ni-Base Alloys and Its Influence on Surface Defect Formation During Manufacturing of Single-Crystal Components

2019 ◽  
Vol 51 (1) ◽  
pp. 309-322 ◽  
Author(s):  
Z. H. Dong ◽  
D. Sergeev ◽  
D. Kobertz ◽  
N. D’Souza ◽  
S. Feng ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Single Crystal ◽  
Solution Heat Treatment ◽  
Surface Defect ◽  
Defect Formation ◽  
Vapor Pressures ◽  
Knudsen Effusion ◽  
Partial Pressures ◽  
Knudsen Effusion Mass Spectrometry

Abstract Vaporization and its associated surface defect formation have become one of the most important challenges in manufacturing single-crystal components. During the kinetic-influenced casting and solution heat treatment of Ni-base superalloys, elements undergo processes of vaporization and deposition causing unpredictable defects. To quantitatively examine the vaporization phenomenon, partial vapor pressures of Ni, Al and Cr in Ni-base alloys were measured in the γ phase over the temperature range of 1473 K to 1650 K using Knudsen effusion mass spectrometry. Experimental results showed that the partial pressure of Al is about two orders of magnitude lower than that of Ni and five times lower than that of Cr, revealing that the vaporization of Al is almost negligible compared with those of Ni and Cr at solution heat treatment temperatures. Variation of partial pressures during homogenization of the as-cast Ni-base alloys was measured in long-term isothermal experiments at 1573 K. It was found that Cr vapor pressure decreases by a factor of two in the first 20 hours whereas the Ni and Al remain nearly constant.

A standard for transmission electron spectroscopy

1978 ◽  
Vol 36 (1) ◽  
pp. 530-531 ◽  
Author(s):  
Dennis Maher ◽  
David Joy ◽  
Peggy Mochel
Keyword(s):  
Thin Films ◽  
Electron Spectroscopy ◽  
Host Lattice ◽  
Single Element ◽  
Multicomponent Systems ◽  
Transmission Electron ◽  
Major Interest ◽  
Standard Specimens ◽  
Forms Of Carbon ◽  
Electron Energy Loss

A variety of standard specimens is needed in order to systematically investigate the instrumentation, specimen, data reduction and quantitation variables in electron energy-loss spectroscopy (EELS). Pure single element specimens (e.g. various forms of carbon) have received considerable attention to date but certain elements of interest cannot be prepared directly as thin films. Since studies of the first and second row elements in two- or multicomponent systems will be of considerable importance in microanalysis using EELS, there is a need for convenient standards containing these species. For many investigations a standard should contain the desired element, or elements, homogeneously dispersed through a suitable matrix and at an accurately known concentration. These conditions may be met by the technique of implantation.Silicon was chosen as the host lattice since its principal ionization energies, EL23 = 98 eV and Ek = 1843 eV, are well removed from the K-edges of most elements of major interest such as boron (Ek = 188 eV), carbon (Ek = 283 eV), nitrogen (Ek = 400 eV) and oxygen (Ek = 532 eV).

Rotary Beveling for In Situ Thin-Section Microscopy of Cell Cultures

1981 ◽  
Vol 39 ◽  
pp. 550-551
Author(s):  
Dean A. Handley ◽  
Jack T. Alexander ◽  
Shu Chien
Keyword(s):  
Cell Growth ◽  
Cell Cultures ◽  
Molecular Interactions ◽  
Convenient Method ◽  
Petri Dish ◽  
Simple Method ◽  
Thin Section Microscopy ◽  
Thin Sectioning ◽  
Organic Fluids

In situ preparation of cell cultures for ultrastructural investigations is a convenient method by which fixation, dehydration and embedment are carried out in the culture petri dish. The in situ method offers the advantage of preserving the native orientation of cell-cell interactions, junctional regions and overlapping configurations. In order to section after embedment, the petri dish is usually separated from the polymerized resin by either differential cryo-contraction or solvation in organic fluids. The remaining resin block must be re-embedded before sectioning. Although removal of the petri dish may not disrupt the native cellular geometry, it does sacrifice what is now recognized as an important characteristic of cell growth: cell-substratum molecular interactions. To preserve the topographic cell-substratum relationship, we developed a simple method of tapered rotary beveling to reduce the petri dish thickness to a dimension suitable for direct thin sectioning.

Scanning electron microscopy of plant cells using a variable-pressure SEM and cryogenic techniques

1993 ◽  
Vol 51 ◽  
pp. 260-261
Author(s):  
M. Yamada ◽  
K. Ueda ◽  
K. Kuboki ◽  
H. Matsushima ◽  
S. Joens
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Saturated Vapor ◽  
Plant Cells ◽  
Variable Pressure ◽  
Specimen Preparation ◽  
Operating Pressure ◽  
Vapor Pressures ◽  
Low Temperature Microscopy ◽  
Scanning Electron

Use of variable Pressure SEMs is spreading among electron microscopists The variable Pressure SEM does not necessarily require specimen Preparation such as fixation, dehydration, coating, etc which have been required for conventional scanning electron microscopy. The variable Pressure SEM allows operating Pressure of 1˜270 Pa in specimen chamber It does not allow microscopy of water-containing specimens under a saturated vapor Pressure of water. Therefore, it may cause shrink or deformation of water-containing soft specimens such as plant cells due to evaporation of water. A solution to this Problem is to lower the specimen temperature and maintain saturated vapor Pressures of water at low as shown in Fig. 1 On this technique, there is a Published report of experiment to have sufficient signal to noise ratio for scondary electron imaging at a relatively long working distance using an environmental SEM. We report here a new low temperature microscopy of soft Plant cells using a variable Pressure SEM (Hitachi S-225ON).

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