IGBT gate driver IC with full-bridge output stage using a modified standard CMOS process

2004 ◽  
Vol 35 (8) ◽  
pp. 659-666 ◽  
Author(s):  
A Pérez-Tomás ◽  
X Jordà ◽  
P Godignon ◽  
J.L Gálvez ◽  
M Vellvehı́ ◽  
...  
2020 ◽  
Vol 2020 (1) ◽  
pp. 000281-000285
Author(s):  
Affan Abbasi ◽  
Asif Faruque ◽  
Sajib Roy ◽  
Robert Murphree ◽  
Tobias Erlbacher ◽  
...  

Abstract In this paper, the design and implementation of a gate driver in SiC CMOS process is presented for heterogeneous integration (HI) inside the commercial SiC power module. The output stage of the gate driver circuit includes four-pull up (QP 1,2,3,4) and four-pull down (QN 1,2,3,4) transistors to vary current drive strength. The output stages are driven by tri-state buffer chains that are controlled by comparator based control circuits. The driver is tested over temperature up to 300°C. At higher temperatures, the peak drive current (under full strength with no external load) increases with the output swing remaining the same. Variation of the driver’s output pull-up and pull-down stage at higher load capacitance is also discussed in this paper. The driver circuit layout is optimized to utilize the maximum die area allowed by the process. The gate driver layout is 4.8mm × 4.8mm. The bond pads and layout orientation are configured for flip-chip packaging but can also be used for wire-bonding.


2013 ◽  
Vol 543 ◽  
pp. 176-179 ◽  
Author(s):  
D.Q. Zhao ◽  
Xia Zhang ◽  
P. Liu ◽  
F. Yang ◽  
C. Lin ◽  
...  

In this work we studied the fabrication of a monolithic bimaterial micro-cantilever resonant IR sensor with on-chip drive circuits. The effects of high temperature process and stress induced performance degradation were investigated. The post-CMOS MEMS (micro electro mechanical system) fabrication process of this IR sensor is the focus of this paper, starting from theoretical analysis and simulation, and then moving to experimental verification. The capacitive cantilever structure was fabricated by surface micromachining method, and drive circuits were prepared by standard CMOS process. While the stress introduced by MEMS films, such as the tensile silicon nitride which works as a contact etch stopper layer for MOSFETs and releasing stop layer for the MEMS structure, increases the electron mobility of NMOS, PMOS hole mobility decreases. Moreover, the NMOS threshold voltage (Vth) shifts, and transconductance (Gm) degrades. An additional step of selective removing silicon nitride capping layer and polysilicon layer upon IC area were inserted into the standard CMOS process to lower the stress in MOSFET channel regions. Selective removing silicon nitride and polysilicon before annealing can void 77% Vth shift and 86% Gm loss.


2021 ◽  
Vol 11 (2) ◽  
pp. 19
Author(s):  
Francesco Centurelli ◽  
Riccardo Della Sala ◽  
Pietro Monsurrò ◽  
Giuseppe Scotti ◽  
Alessandro Trifiletti

In this paper, we present a novel operational transconductance amplifier (OTA) topology based on a dual-path body-driven input stage that exploits a body-driven current mirror-active load and targets ultra-low-power (ULP) and ultra-low-voltage (ULV) applications, such as IoT or biomedical devices. The proposed OTA exhibits only one high-impedance node, and can therefore be compensated at the output stage, thus not requiring Miller compensation. The input stage ensures rail-to-rail input common-mode range, whereas the gate-driven output stage ensures both a high open-loop gain and an enhanced slew rate. The proposed amplifier was designed in an STMicroelectronics 130 nm CMOS process with a nominal supply voltage of only 0.3 V, and it achieved very good values for both the small-signal and large-signal Figures of Merit. Extensive PVT (process, supply voltage, and temperature) and mismatch simulations are reported to prove the robustness of the proposed amplifier.


Circuit World ◽  
2019 ◽  
Vol 45 (2) ◽  
pp. 80-85
Author(s):  
Tian Lei ◽  
Nan Gong ◽  
Li Wang ◽  
Qin Qin Li ◽  
Heng Wei Wang

Purpose Because of the logic delay in the converter, the minimum turn on time of the switch is influenced by the constant time. When the inductor current gets to the threshold of the chip, the control signal will delay for a period. This makes the inductor current rising with the increasing of the clock and leads to the load current out of control. Thus, this paper aims to design an oscillator with a variable frequency protection function. Design/methodology/approach This paper presents an oscillator with the reducing frequency applied in the DC-DC converter. When the converter works normally, the operating frequency of the oscillator is 1.5 MHz. So the inductor current has enough time to decay and prevent the power transistor damaging. After the abnormal condition, the converter returns to the normal operating mode automatically. Findings Based on 0.5 µm CMOS process, simulated by the HSPICE, the simulation results shows that the frequency of the oscillator linearly decreases from 1.5 MHz to 380 KHz when the feedback voltage less than 0.2 V. The maximum deviation of the oscillator frequency is only 6 per cent from −50°C to 125°C within the power supply voltage of 2.7-5.5 V. Originality/value When the light load occurs at the output stage, the oscillator frequency will decrease as the load voltage drops. The test results shows that when the circuit works in the normal condition, the oscillator frequency is 1.5 MHz. When the load decreased, the operating frequency is dropped dramatically.


Author(s):  
M. Fischer ◽  
M. Nagele ◽  
D. Eichner ◽  
C. Schollhorn ◽  
R. Strobel

2010 ◽  
Vol 18 (21) ◽  
pp. 22215 ◽  
Author(s):  
Gun-Duk Kim ◽  
Hak-Soon Lee ◽  
Chang-Hyun Park ◽  
Sang-Shin Lee ◽  
Boo Tak Lim ◽  
...  

2011 ◽  
Vol 20 (07) ◽  
pp. 1277-1286 ◽  
Author(s):  
MERIH YILDIZ ◽  
SHAHRAM MINAEI ◽  
EMRE ARSLAN

This work presents a high-slew rate rail-to-rail buffer amplifier, which can be used for flat panel displays. The proposed buffer amplifier is composed of two transconductance amplifiers, two current comparators and a push-pull output stage. Phase compensation technique is also used to improve the phase margin value of the proposed buffer amplifier for different load capacitances. Post-layout simulations of the proposed buffer amplifier are performed using 0.35 μm AMS CMOS process parameters and 3.3 V power supply. The circuit is tested under a 600 pF capacitive load. An average settling time of 0.85 μs under a full voltage swing is obtained, while only 3 μA quiescent current is drawn from the power supply. Monte Carlo analysis is also added to show the process variation effects on the circuit.


2018 ◽  
Vol E101.C (7) ◽  
pp. 574-580
Author(s):  
Koichi IIYAMA ◽  
Takeo MARUYAMA ◽  
Ryoichi GYOBU ◽  
Takuya HISHIKI ◽  
Toshiyuki SHIMOTORI

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