Carbon buildup monitoring using RBS: Correlation with secondary electrons

2006 ◽  
Vol 244 (2) ◽  
pp. 427-435 ◽  
Author(s):  
E.F. Aguilera ◽  
P. Rosales ◽  
E. Martinez-Quiroz ◽  
G. Murillo ◽  
M.C. Fernández
Keyword(s):  
Secondary Electrons ◽  
Carbon Buildup

Specimen Collection Effect in Scanning Electron Microscopy Images

1972 ◽  
Vol 30 ◽  
pp. 448-449
Author(s):  
J. Temple Black ◽  
Jose Guerrero
Keyword(s):  
Surface Morphology ◽  
Secondary Electron Emission ◽  
Secondary Electrons ◽  
Charge Effects ◽  
Material Density ◽  
Specimen Collection ◽  
The Subject ◽  
Curved Paths ◽  
Subject Material ◽  
Microscopy Images

In the SEM, contrast in the image is the result of variations in the volume secondary electron emission and backscatter emission which reaches the detector and serves to intensity modulate the signal for the CRT's. This emission is a function of the accelerating potential, material density, chemistry, crystallography, local charge effects, surface morphology and especially the angle of the incident electron beam with the particular surface site. Aside from the influence of object inclination, the surface morphology is the most important feature In producing contrast. “Specimen collection“ is the name given the shielding of the collector by adjacent parts of the specimen, producing much image contrast. This type of contrast can occur for both secondary and backscatter electrons even though the secondary electrons take curved paths to the detector-collector.Figure 1 demonstrates, in a unique and striking fashion, the specimen collection effect. The subject material here is Armco Iron, 99.85% purity, which was spark machined.

Analysis of Contrast Reversal in SEM Images

1972 ◽  
Vol 30 ◽  
pp. 398-399
Author(s):  
M. D. Coutts ◽  
E. R. Levin
Keyword(s):  
Incident Beam ◽  
Normal Incidence ◽  
Beam Current ◽  
Secondary Emission ◽  
Image Contrast ◽  
Sem Images ◽  
Secondary Electrons ◽  
Image Position

On tilting samples in an SEM, the image contrast between two elements, x and y often decreases to zero at θε, which we call the no-contrast angle. At angles above θε the contrast is reversed, θ being the angle between the specimen normal and the incident beam. The available contrast between two elements, x and y, in the SEM can be defined as,(1)where ix and iy are the total number of reflected and secondary electrons, leaving x and y respectively. It can easily be shown that for the element x,(2)where ib is the beam current, isp the specimen absorbed current, δo the secondary emission at normal incidence, k is a constant, and m the reflected electron coefficient.

Imaging and diffraction modes in Scanning Transmission Electron Microscopy

1986 ◽  
Vol 44 ◽  
pp. 684-687
Author(s):  
J. M. Cowley ◽  
R. Glaisher ◽  
J. A. Lin ◽  
H.-J. Ou
Keyword(s):  
Scanning Transmission Electron Microscopy ◽  
High Efficiency ◽  
Fiber Optic ◽  
Image Intensifier ◽  
Detector System ◽  
Detector Plane ◽  
Secondary Electrons ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Special Detector

Some of the most important applications of STEM depend on the variety of imaging and diffraction made possible by the versatility of the detector system and the serial nature, of the image acquisition. A special detector system, previously described, has been added to our STEM instrument to allow us to take full advantage of this versatility. In this, the diffraction pattern in the detector plane may be formed on either of two phosphor screens, one with P47 (very fast) phosphor and the other with P20 (high efficiency) phosphor. The light from the phosphor is conveyed through a fiber-optic rod to an image intensifier and TV system and may be photographed, recorded on videotape, or stored digitally on a frame store. The P47 screen has a hole through it to allow electrons to enter a Gatan EELS spectrometer. Recently a modified SEM detector has been added so that high resolution (10Å) imaging with secondary electrons may be used in conjunction with other modes.

Imaging magnetic microstructure with SEMPA

1993 ◽  
Vol 51 ◽  
pp. 1032-1033
Author(s):  
M. H. Kelley ◽  
J. Unguris ◽  
R. J. Celotta ◽  
D. T. Pierce
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Sandwich Structure ◽  
Magnetic Coupling ◽  
Polarization Analysis ◽  
Secondary Electrons ◽  
Magnetic Microstructure ◽  
Escape Depth ◽  
Scanning Electron

By measuring the spin polarization of secondary electrons generated in a scanning electron microscope, scanning electron microscopy with polarization analysis (SEMPA) can directly image the magnitude and direction of a material’s magnetization. Because the escape depth of the secondaries is only on the order of 1 nm, SEMPA is especially well-suited for investigating the magnetization of ultra-thin films and surfaces. We have exploited this feature of SEMPA to study the magnetic microstrcture and magnetic coupling in ferromagnetic multilayers where the layers may only be a few atomic layers thick. For example, we have measured the magnetic coupling in Fe/Cr/Fe(100) and Fe/Ag/Fe(100) trilayers and have found that the coupling oscillates between ferromagnetic and antiferromagnetic as a function of the Cr or Ag spacer thickness.The SEMPA apparatus has been described in detail elsewhere. The sample consisted of a magnetic sandwich structure with a wedge-shaped interlayer as shown in Fig. 1.

Analysis of Voltage Contrast in Secondary Electron Images Using a High-Energy Electron Spectrometer

2019 ◽  
Author(s):  
Natsuko Asano ◽  
Shunsuke Asahina ◽  
Natasha Erdman
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Sample Surface ◽  
High Energy ◽  
Secondary Electrons ◽  
Analysis Technique ◽  
Quantitative Understanding ◽  
Voltage Contrast ◽  
Acceleration Voltage ◽  
Failure Localization

Abstract Voltage contrast (VC) observation using a scanning electron microscope (SEM) or a focused ion beam (FIB) is a common failure analysis technique for semiconductor devices.[1] The VC information allows understanding of failure localization issues. In general, VC images are acquired using secondary electrons (SEs) from a sample surface at an acceleration voltage of 0.8–2.0 kV in SEM. In this study, we aimed to find an optimized electron energy range for VC acquisition using Auger electron spectroscopy (AES) for quantitative understanding.

Collection and counting efficiency

2017 ◽  
Author(s):  
A. G. Wright
Keyword(s):  
Quantum Efficiency ◽  
Standard Method ◽  
Shot Noise ◽  
Count Rate ◽  
Detection Efficiency ◽  
Collection Efficiency ◽  
Counting Efficiency ◽  
Single Electron ◽  
Anode Current ◽  
Secondary Electrons

Standards laboratories can provide a photocathode calibration for quantum efficiency, as a function of wavelength, but their measurements are performed with the photomultiplier operating as a photodiode. Each photoelectron released makes a contribution to the photocathode current but, if it is lost or fails to create secondary electrons at d1, it makes no contribution to anode current. This is the basis of collection efficiency, F. The anode detection efficiency, ε‎, allied to F, refers to the counting efficiency of output pulses. The standard method for determining F involves photocurrent, anode current, count rate, and the use of highly attenuating filters; F may also be measured using methods based on single-electron responses (SERs), shot noise, or the SER at the first dynode.

Effects of Space Charge on ESEM Gas Amplification

1997 ◽  
Vol 3 (S2) ◽  
pp. 609-610 ◽  
Author(s):  
B.L. Thiel ◽  
M.R. Hussein-Ismail ◽  
A.M. Donald
Keyword(s):  
Electric Field ◽  
Electrostatic Field ◽  
Secondary Electron ◽  
Sample Surface ◽  
Cascade Process ◽  
Secondary Electrons ◽  
Positive Ions ◽  
Space Charges ◽  
Cascade Amplification ◽  
Environmental Sem

We have performed a theoretical investigation of the effects of space charges in the Environmental SEM (ESEM). The ElectroScan ESEM uses an electrostatic field to cause gas cascade amplification of secondary electron signals. Previous theoretical descriptions of the gas cascade process in the ESEM have assumed that distortion of the electric field due to space charges can be neglected. This assumption has now been tested and shown to be valid.In the ElectroScan ESEM, a positively biased detector is located above the sample, creating an electric field on the order of 105 V/m between the detector and sample surface. Secondary electrons leaving the sample are cascaded though the gas, amplifying the signal and creating positive ions. Because the electrons move very quickly through the gas, they do not accumulate in the specimen-to-detector gap. However, the velocity of the positive ions is limited by diffusion.

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