Electrical characterization of aluminous cement at the early age in the 10 Hz–1 GHz frequency range

Epoxy nanocomposites fulfill tight and compelling industrial requirements in the field of structural material for aeronautical applications. In this paper the development and characterization of nanocomposites obtained by filling tetrafunctional epoxy resin (tetraglycidyl methylene dianiline cured with the aromatic diamine 4,4’-diaminodiphenylsulfone, named T20BD) with carbon nanofibers (CNF) is discussed. A filler amount ranging from 0.05% to 2%wt is considered. The DC volume conductivity and the dielectric characteristics (ϵ’) of the nanocomposites in the frequency range 100Hz-1MHz are analyzed and compared with those of the pure resin. Atomic force microscopy, mapping the local topography by means of tunneling effect, is used for recording the electrical percolation path for nanocomposites. In particular, the case 1.3wt% of CNF filled nanocomposites that exhibits a stable behavior of the conductivity in the full investigated frequency range, is here reported. The developed filled epoxy used in carbon fiber reinforced composites, shows enhanced electrical properties leading to better electromagnetic (EM) performances in EM coatings, EM shields and filters or radar absorber materials (RAMs).

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Wide frequency range ac electrical characterization of thick-film microvaristors

Microelectronics Reliability ◽

10.1016/j.microrel.2011.02.026 ◽

2011 ◽

Vol 51 (7) ◽

pp. 1219-1224 ◽

Cited By ~ 5

Author(s):

M.W. Dudek ◽

K. Nitsch ◽

A. Dziedzic ◽

T. Piasecki

Keyword(s):

Thick Film ◽

Electrical Characterization ◽

Wide Frequency Range ◽

Frequency Range

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Electrical characterization of bolus material as phantom for use in electrical impedance and computed tomography fusion imaging

Journal of Electrical Bioimpedance ◽

10.5617/jeb.781 ◽

2019 ◽

Vol 5 (1) ◽

pp. 34-39 ◽

Cited By ~ 4

Author(s):

Parvind K Grewal ◽

Majid Shokoufi ◽

Jeff Liu ◽

Krishnan Kalpagam ◽

Kirpal S Kohli

Keyword(s):

Electrical Impedance ◽

Electrical Characterization ◽

Fusion Imaging ◽

Biological Tissues ◽

Frequency Range ◽

Imaging Studies ◽

Impedance Tomography ◽

Clinical Imaging

Abstract Phantoms are widely used in medical imaging to predict image quality prior to clinical imaging. This paper discusses the possible use of bolus material, as a conductivity phantom, for validation and interpretation of electrical impedance tomography (EIT) images. Bolus is commonly used in radiation therapy to mimic tissue. When irradiated, it has radiological characteristics similar to tissue. With increased research interest in CT/EIT fusion imaging there is a need to find a material which has both the absorption coefficient and electrical conductivity similar to biological tissues. In the present study the electrical properties, specifically resistivity, of various commercially available bolus materials were characterized by comparing their frequency response with that of in-vivo connective adipose tissue. It was determined that the resistivity of Gelatin Bolus is similar to in-vivo tissue in the frequency range 10 kHz to 1MHz and therefore has potential to be used in EIT/CT fusion imaging studies.

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CHEMICAL AND ELECTRICAL CHARACTERIZATION OF POLYCRYSTALLINE SEMICONDUCTORS

Le Journal de Physique Colloques ◽

10.1051/jphyscol:1982124 ◽

1982 ◽

Vol 43 (C1) ◽

pp. C1-171-C1-185 ◽

Cited By ~ 5

Author(s):

L. L. Kazmerski ◽

P. E. Russell

Keyword(s):

Electrical Characterization ◽

Polycrystalline Semiconductors

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Structural and Electrical Characterization of Shaped Beam Laser Recrystallized Polysilicon on Amorphous Substrates

MRS Proceedings ◽

10.1557/proc-4-499 ◽

1981 ◽

Vol 4 ◽

Author(s):

T. J. Stultz ◽

J. F. Gibbons

Keyword(s):

Grain Size ◽

Electrical Characterization ◽

Grain Structure ◽

Electrical Characteristics ◽

Shaped Beam ◽

Beam Laser ◽

Cw Laser ◽

Amorphous Substrates ◽

Circular Beam

ABSTRACTStructural and electrical characterization of laser recrystallized LPCVD silicon films on amorphous substrates using a shaped cw laser beam have been performed. In comparing the results to data obtained using a circular beam, it was found that a significant increase in grain size can be achieved and that the surface morphology of the shaped beam recrystallized material was much smoother. It was also found that whereas circular beam recrystallized material has a random grain structure, shaped beam material is highly oriented with a <100> texture. Finally the electrical characteristics of the recrystallized film were very good when measured in directions parallel to the grain boundaries.

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Vapor Deposition Polymerization and Electrical Characterization of TPD Thin Films

IEICE Transactions on Electronics ◽

10.1587/transele.e94.c.157 ◽

2011 ◽

Vol E94-C (2) ◽

pp. 157-163 ◽

Cited By ~ 4

Author(s):

Masakazu MUROYAMA ◽

Ayako TAJIRI ◽

Kyoko ICHIDA ◽

Seiji YOKOKURA ◽

Kuniaki TANAKA ◽

...

Keyword(s):

Thin Films ◽

Vapor Deposition ◽

Electrical Characterization

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Electrical Characterization of Different Failure Modes in Sub-100 nm Devices Using Nanoprobing Technique

ISTFA 2009: Conference Proceedings from the 35th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2009p0081 ◽

2009 ◽

Author(s):

E. Hendarto ◽

S.L. Toh ◽

J. Sudijono ◽

P.K. Tan ◽

H. Tan ◽

...

Keyword(s):

Electron Microscope ◽

Focused Ion Beam ◽

Failure Modes ◽

Ion Beam ◽

Electrical Characterization ◽

Nickel Silicide ◽

Fault Isolation ◽

Technology Nodes ◽

Scanning Electron

Abstract The scanning electron microscope (SEM) based nanoprobing technique has established itself as an indispensable failure analysis (FA) technique as technology nodes continue to shrink according to Moore's Law. Although it has its share of disadvantages, SEM-based nanoprobing is often preferred because of its advantages over other FA techniques such as focused ion beam in fault isolation. This paper presents the effectiveness of the nanoprobing technique in isolating nanoscale defects in three different cases in sub-100 nm devices: soft-fail defect caused by asymmetrical nickel silicide (NiSi) formation, hard-fail defect caused by abnormal NiSi formation leading to contact-poly short, and isolation of resistive contact in a large electrical test structure. Results suggest that the SEM based nanoprobing technique is particularly useful in identifying causes of soft-fails and plays a very important role in investigating the cause of hard-fails and improving device yield.

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Case Studies in Atomic Force Probe Analysis

ISTFA 2006: Conference Proceedings from the 32nd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2006p0153 ◽

2006 ◽

Author(s):

Randal Mulder ◽

Sam Subramanian ◽

Tony Chrastecky

Keyword(s):

Failure Analysis ◽

Case Studies ◽

Light Emission ◽

Electrical Characterization ◽

Logic Circuits ◽

Contrast Imaging ◽

Atomic Force ◽

Measuring Surface ◽

Analysis Environment

Abstract The use of atomic force probe (AFP) analysis in the analysis of semiconductor devices is expanding from its initial purpose of solely characterizing CMOS transistors at the contact level with a parametric analyzer. Other uses found for the AFP include the full electrical characterization of failing SRAM bit cells, current contrast imaging of SOI transistors, measuring surface roughness, the probing of metallization layers to measure leakages, and use with other tools, such as light emission, to quickly localize and identify defects in logic circuits. This paper presents several case studies in regards to these activities and their results. These case studies demonstrate the versatility of the AFP. The needs and demands of the failure analysis environment have quickly expanded its use. These expanded capabilities make the AFP more valuable for the failure analysis community.

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