High-resolution magneto-optical imaging of critical currents in YBa2Cu3O7− thin films

1998 ◽  
Vol 299 (3-4) ◽  
pp. 215-230 ◽  
Author(s):  
Ch. Jooss ◽  
R. Warthmann ◽  
A. Forkl ◽  
H. Kronmüller
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
Optical Imaging ◽  
Critical Currents

Epitaxy and texture analysis of Bi-Sr-Ca-Cu-O thin films on (100) MgO using Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 68-69
Author(s):  
J. T. Sizemore ◽  
D. G. Schlom ◽  
Z. J. Chen ◽  
J. N. Eckstein ◽  
I. Bozovic ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Critical Currents ◽  
Unit Cell ◽  
X Ray Diffraction ◽  
Cell Axis ◽  
Transmission Electron ◽  
Synthesis Procedure

Investigators observe large critical currents for superconducting thin films deposited epitaxially on single crystal substrates. The orientation of these films is often characterized by specifying the unit cell axis that is perpendicular to the substrate. This omits specifying the orientation of the other unit cell axes and grain boundary angles between grains of the thin film. Misorientation between grains of YBa2Cu3O7−δ decreases the critical current, even in those films that are c axis oriented. We presume that these results are similar for bismuth based superconductors and report the epitaxial orientations and textures observed in such films.Thin films of nominally Bi2Sr2CaCu2Ox were deposited on MgO using molecular beam epitaxy (MBE). These films were in situ grown (during growth oxygen was incorporated and the films were not oxygen post-annealed) and shuttering was used to encourage c axis growth. Other papers report the details of the synthesis procedure. The films were characterized using x-ray diffraction (XRD) and transmission electron microscopy (TEM).

Microstructure of YBa2Cu3O7-x thin films deposited by dc sputtering

1989 ◽  
Vol 47 ◽  
pp. 172-173
Author(s):  
O. Eibl ◽  
G. Gieres ◽  
H. Behner
Keyword(s):  
Thin Films ◽  
Cross Sections ◽  
Intermediate Layer ◽  
Amorphous State ◽  
Critical Currents ◽  
Dc Sputtering ◽  
State Process ◽  
Diffraction Patterns ◽  
Film Substrate ◽  
Substrate Temperatures

The microstructure of high-Tc YBa2Cu3O7-X thin films deposited by DC-sputtering on SrTiO3 substrates was analysed by TEM. Films were either (i) deposited in the amorphous state at substrate temperatures < 450°C and crystallised by a heat treatment at 900°C (process 1) or (ii) deposited at around 740°C in the crystalline state (process 2). Cross sections were prepared for TEM analyses and are especially useful for studying film substrate interdiffusion (fig.1). Films deposited in process 1 were polycristalline and the grain size was approximately 200 nm. Films were porous and the size of voids was approximately 100 nm. Between the SrTiO3 substrate and the YBa2Cu3Ox film a densly grown crystalline intermediate layer approximately 150 nm thick covered the SrTiO3 substrate. EDX microanalyses showed that the layer consisted of Sr, Ba and Ti, however, did not contain Y and Cu. Crystallites of the layer were carefully tilted in the microscope and diffraction patterns were obtained in five different poles for every crystallite. These patterns were consistent with the phase (Ba1-XSrx)2TiO4. The intermediate layer was most likely formed during the annealing at 900°C. Its formation can be understood as a diffusion of Ba from the amorphously deposited film into the substrate and diffusion of Sr from the substrate into the film. Between the intermediate layer and the surface of the film the film consisted of YBa2Cu3O7-x grains. Films prepared in process 1 had Tc(R=0) close to 90 K, however, critical currents were as low as jc = 104A/cm2 at 77 K.

Formation of Large, Orientation-Controlled, Nearly Single Crystalline Si Thin Films on SiO2 Using Contact Printing of Rolled and Annealed Nickel Tapes

2003 ◽  
Vol 762 ◽  
Author(s):  
Hwang Huh ◽  
Jung H. Shin
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
High Resolution ◽  
Amorphous Silicon ◽  
Tem Analysis ◽  
Contact Printing ◽  
Single Crystalline ◽  
High Resolution Tem ◽  
Lateral Crystallization ◽  
Si Films

AbstractAmorphous silicon (a-Si) films prepared on oxidized silicon wafer were crystallized to a highly textured form using contact printing of rolled and annealed nickel tapes. Crystallization was achieved by first annealing the a-Si film in contact with patterned Ni tape at 600°C for 20 min in a flowing forming gas (90 % N2, 10 % H2) environment, then removing the Ni tape and further annealing the a-Si film in vacuum for2hrsat600°C. An array of crystalline regions with diameters of up to 20 μm could be formed. Electron microscopy indicates that the regions are essentially single-crystalline except for the presence of twins and/or type A-B formations, and that all regions have the same orientation in all 3 directions even when separated by more than hundreds of microns. High resolution TEM analysis shows that formation of such orientation-controlled, nearly single crystalline regions is due to formation of nearly single crystalline NiSi2 under the point of contact, which then acts as the template for silicide-induced lateral crystallization. Furthermore, the orientation relationship between Si grains and Ni tape is observed to be Si (110) || Ni (001)

VIS-NIR LED Illumination in Backside Circuit Edit and Optical Probing Applications

2012 ◽  
Author(s):  
Shida Tan ◽  
Richard H. Livengood ◽  
Dane Scott ◽  
Roy Hallstein ◽  
Pat Pardy ◽  
...  
Keyword(s):  
High Resolution ◽  
Image Quality ◽  
Optical Imaging ◽  
Narrow Band ◽  
Light Emitting Diode ◽  
Air Gap ◽  
Optical Image ◽  
Proof Of Concept ◽  
Light Emitting ◽  
Optical Probing

Abstract High resolution optical imaging is critical in assisting backside circuit edit (CE) and optical probing navigation. In this paper, we demonstrated improved optical image quality using VIS-NIR narrow band light emitting diode (LED) illumination in various FIB and optical probing platforms. The proof of concept was demonstrated with both common non-contact air gap lenses and solid immersion lenses (SIL).

Atomic structure of [0001]-tilt grain boundaries in ZnO:  A high-resolution TEM study of fiber-textured thin films

2004 ◽  
Vol 70 (12) ◽  
Author(s):  
Fumiyasu Oba ◽  
Hiromichi Ohta ◽  
Yukio Sato ◽  
Hideo Hosono ◽  
Takahisa Yamamoto ◽  
...  
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
Grain Boundaries ◽  
Atomic Structure ◽  
High Resolution Tem

High-resolution quantitative X-ray microanalysis of Nb/AI multilayer thin films using the ζ-factor approach

1999 ◽  
Vol 79 (6) ◽  
pp. 1423-1442 ◽  
Author(s):  
G. Lucadamo ◽  
M. Watanabe ◽  
K. Barmak ◽  
D. B. Williams ◽  
C. Michaelsen ◽  
...  
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
Multilayer Thin Films ◽  
X Ray

Formation and Structure of Thin Mo Layers and Mo-Ni Multilayers on Ni(001) by Molecular Beam Epitaxy

1989 ◽  
Vol 160 ◽  
Author(s):  
Y.H. Lee ◽  
R.P. Burns ◽  
J.B. Posthill ◽  
K.J. Bachmann
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Nucleation And Growth ◽  
Multilayer Heterostructures ◽  
Annealing Experiments ◽  
Small Period

AbstractThe growth of Mo overtayers and Mo-Ni multilayers on single crystal Ni(001) substrates is described. The nucleation and growth processes of these thin films were analyzed by LEED, XPS, AES and SEM and High Resolution AES investigations without breaking vacuum. Growth of Mo-Ni multilayer heterostructures on Ni(001) with ≈20Å periodicity is possible at low temperature (≈200 °C). At high temperature (≈550 °C) the growth proceeds by the Volmer-Weber mechanism preventing the deposition of small period multilayers. Annealing experiments on ultra-thin (<20Å) Mo overiayers deposited at 200 °C show an onset of interdiffusion at ≈ 550°C coupled to the generation of a new surface periodicity.

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