Microstructural characterization of InGaAs/GaAs quantum wells grown at low substrate temperatures

1991 ◽  
Vol 49 ◽  
pp. 846-847
Author(s):  
C.M. Sung ◽  
B. Elman ◽  
K.J. Ostreicher ◽  
J. Hefter ◽  
Emil S. Koteles
Keyword(s):  
Quantum Wells ◽  
Microstructural Characterization ◽  
High Energy ◽  
Ion Milling ◽  
Cross Sectional ◽  
Usual Manner ◽  
Optical And Electronic Properties ◽  
Pseudomorphic Growth ◽  
Substrate Temperatures

The composition and thickness of InxGa1-xAs/GaAs quantum wells play an important role in the determination of their optical and electronic properties. InxGa1-xAs/GaAs single quantum wells (SQWs) grown at low substrate temperatures with various In compositions (x) and well thicknesses were investigated by reflected high energy electron diffraction (RHEED) and photoluminescence (PL) techniques to determine when the critical thickness for pseudomorphic growth was exceeded. Cross-sectional TEM methods were employed to directly determine the critical layer thickness of InGaAs on GaAs and the presence of the dislocations generated in these layers.The samples were grown by MBE on semi-insulating (100) GaAs substrates at substrate temperatures of 410°C and 460°C. They consisted of undoped SQWs and barriers in which the well width was varied from 1 nm to 22 nm. The In composition in the well layers was varied from 0.3 to 0.5. The growth rates and In compositions were deduced from RHEED intensity oscillation measurements . Cross-sectional specimens for TEM studies were prepared in the usual manner, by mechanical thinning followed by Ar+ ion milling. A Philips EM400T operated at 120 keV was used to observe the specimens.

Microstructure of silicon implanted with MeV gold ions

1991 ◽  
Vol 49 ◽  
pp. 876-877
Author(s):  
M.J. Kim ◽  
M. Catalano ◽  
T.P. Sjoreen ◽  
R.W. Carpenter
Keyword(s):  
Single Crystal ◽  
Ion Irradiation ◽  
Microstructural Characterization ◽  
High Energy ◽  
Ion Milling ◽  
Cross Sectional ◽  
Microstructural Investigation ◽  
Annealing Behavior ◽  
Different Doses

High-energy implantation of silicon is of great interest in recent years for microelectronics due to the formation of a buried damage or dopant layer away from the active region of the device. The damage nucleation and growth behavior is known to vary significantly along the ion's track for MeV irradiation. In this paper, a detailed characterization of the damage morphology produced by MeV gold ions for different doses into single crystal Si, as well as the associated annealing behavior, is presented.Single crystal n-type Czochralski silicon {001} wafers were implanted with Au++ ions from doses of 1x1015 to 3x1016 cm-2 at 2-3 MeV. Specimen temperatures for all implantations were 20 or 300°C. A measurement with an infrared pyrometer of the implanted surface indicated a slight temperature rise during ion irradiation. The compositional and damage profiles were determined by Rutherford backscattering/channeling spectroscopy (RBS). Cross-sectional TEM samples for microstructural characterization were prepared by mechanical polishing and ion milling. A Philips 400ST/FEG analytical microscope was used for nanoprobe experiments, at 100 kV. Microstructural investigation was performed using ISI-002B and JEM-2000FX microscopes, at 200 kV.

Determination of as Sticking Coefficients Using Reflection high Energy Electron Diffraction Intensity Oscillations on GaAs

1989 ◽  
Vol 145 ◽  
Author(s):  
Robert Chow ◽  
Rouel Fernandez
Keyword(s):  
Substrate Temperature ◽  
High Energy ◽  
Incorporation Rate ◽  
Sticking Coefficient ◽  
Diffraction Intensity ◽  
Arrhenius Dependence ◽  
As Species ◽  
Substrate Temperatures ◽  
Sticking Coefficients

AbstractRHEED intensity oscillations were used to investigate As-controlled incorporation rates. The measurements were made under Ga accumulation at the surface of the substrate, and at fluxes and substrate temperatures common for 1.0 micron/hr GaAs growth. The results between the dimer and tetramer As species were compared. The transition between Ga and As controlled incorporation rates was constant within 2.5°C for a constant As flux and was independent of the substrate temperature. Also, the As-controlled incorporation rate curves shows two regions as the substrate temperature increases. At low substrate temperatures, the As incorporation rate is substrate temperature independent. Then at higher substrate temperatures, the As incorporation rate has an arrhenius dependence with a positive activation energy. An interpretation of these results is possible by assigning the maximum sticking coefficient of the tetramer to the region where the As incorporation rate is independent of substrate temperature. This assignment allows one to derive the As (dimers and tetramers) sticking coefficient dependence with substrate temperature. The dimer sticking coefficients are greater that the tetramer sticking coefficients for a given substrate temperature and As flux, and the maximum sticking coefficient of the As dimer was determined to be 0.8 in these experiments.

Surface and Microstructural Characterization of Homoepitaxial Silicon Grown by Pulsed Laser Deposition

2000 ◽  
Vol 616 ◽  
Author(s):  
J.S. Pelt ◽  
R. Magahñ;a ◽  
M.E. Ramsey ◽  
E. Poindexter ◽  
S. Atwell ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Microstructural Characterization ◽  
Thin Film Deposition ◽  
High Energy ◽  
Film Deposition ◽  
Laser Deposition ◽  
Reliable Technique ◽  
Transmission Electron ◽  
Substrate Temperatures

AbstractThere is a great deal of interest in thin film deposition techniques which can achieve good crystal quality at low substrate temperatures. Pulsed laser deposition (PLD), well-known as a reliable technique for fabrication of high critical temperature superconductor thin films, has a number of characteristics which may make it suitable for such applications. In particular, PLD is characterized by a relatively large average species energy, which can be controlled by the laser fluence at the target. This paper describes the growth of silicon on silicon films using PLD over substrate temperatures between 500 and 700 °C, and in-situ characterization using reflection high-energy electron diffraction (RHEED). Transmission electron microscopy confirms the growth of single crystal oriented films, and atomic force microscopy indicates smooth films with an rms surface roughness of less than 2 Å

INTERACTION BETWEEN Zn AND Cd ATOMS DURING THE ATOMIC LAYER EPITAXY GROWTH OF CdZnTe/ZnTe QUANTUM WELLS

2002 ◽  
Vol 09 (05n06) ◽  
pp. 1725-1728 ◽  
Author(s):  
ERICK M. LARRAMENDI ◽  
EDGAR LÓPEZ-LUNA ◽  
OSVALDO DE MELO ◽  
ISAAC HERNÁNDEZ-CALDERÓN
Keyword(s):  
Quantum Wells ◽  
Atomic Layer ◽  
High Energy ◽  
Atomic Layer Epitaxy ◽  
Temporal Behavior ◽  
High Energy Electron ◽  
Substrate Temperatures ◽  
Kinetics Of ◽  
Znte Film ◽  
Cdte Surface

Layers of 6 and 16 Cd–Te–Zn–Te periods were grown by atomic layer epitaxy (ALE) within ZnTe thin films. Different samples were grown at substrate temperatures of 260 and 290°C. Information about the kinetics of growth and surface reconstruction during the ALE growth of CdTe and ZnTe films, and Cd–Te–Zn–Te periods was obtained by means of reflection high-energy electron diffraction (RHEED) experiments and through the analysis of the temporal behavior of the intensities of several features of the RHEED patterns. The photoluminescence of the sample grown at 260°C presents two narrow and intense peaks corresponding to emission from quantum wells (QWs). However, the spectrum of the samples grown at 290°C does not show any feature associated with QWs, the spectrum resembling that of a ZnTe film. Cd replacement by Zn atoms explains the absence of the CdZnTe QWs at 290°C and a lower Cd content than expected at 260°C. The replacement of Cd atoms by Zn atoms in the CdTe surface was clearly demonstrated by Auger experiments.

Microanalysis of high-dose oxygen-implanted germanium

1991 ◽  
Vol 49 ◽  
pp. 866-867
Author(s):  
M.J. Kim ◽  
Q. Zhang ◽  
K. Das Chowdhury ◽  
R.W. Carpenter ◽  
J.C. Kelly
Keyword(s):  
Ion Implantation ◽  
High Speed ◽  
Structural Changes ◽  
Rutherford Backscattering Spectrometry ◽  
Microstructural Characterization ◽  
High Dose ◽  
Ion Milling ◽  
Cross Sectional ◽  
Microstructural Investigation ◽  
Implantation Temperature

High-dose ion implantation is being increasingly used to produce buried oxide layers in silicon for high speed CMOS and VLSI applications. Ion implantation into germanium has been used to control optical properties. Germanium implanted with high dose oxygen is a promising material for photodetectors and solar energy converters. In the present study the structural changes in germanium caused by high dose oxygen implantation, giving low reflectivity in the far-UV and visible, were characterized by HREM and high spatial resolution AEM.The single crystal n-type germanium {111} wafers were implanted with O+ ions to doses of lx1017 to 1.5xl018 cm-2 at 45 keV. The implantation temperature was estimated to be about 400°C. The absorption behavior of the implanted samples was measured by Infrared (IR) spectroscopy. The compositional profiles of implanted layers were obtained by Rutherford Backscattering Spectrometry (RBS) and position-resolved EELS. Cross-sectional TEM samples for microstructural characterization were prepared by mechanical polishing and ion milling. A Philips 400ST/FEG analytical microscope was used for nanoprobe experiments, at 100 kV. Microstructural investigation was performed using ISI-002B and JEM-2000FX microscopes, at 200 kV.

Microstructural characterization of CoPtCr/Cr thin film disks by cross-section TEM and elongated probe micro-diffraction

1991 ◽  
Vol 49 ◽  
pp. 762-763
Author(s):  
M.A. Parker ◽  
K.E. Johnson ◽  
C. Hwang ◽  
A. Bermea
Keyword(s):  
Magnetic Recording ◽  
Electron Probe ◽  
Microstructural Characterization ◽  
Crystallographic Structure ◽  
Recording Media ◽  
Layer By Layer ◽  
Cross Sectional ◽  
New Techniques ◽  
Polished Side

We have reported the dependence of the magnetic and recording properties of CoPtCr recording media on the thickness of the Cr underlayer. It was inferred from XRD data that grain-to-grain epitaxy of the Cr with the CoPtCr was responsible for the interaction observed between these layers. However, no cross-sectional TEM (XTEM) work was performed to confirm this inference. In this paper, we report the application of new techniques for preparing XTEM specimens from actual magnetic recording disks, and for layer-by-layer micro-diffraction with an electron probe elongated parallel to the surface of the deposited structure which elucidate the effect of the crystallographic structure of the Cr on that of the CoPtCr.XTEM specimens were prepared from magnetic recording disks by modifying a technique used to prepare semiconductor specimens. After 3mm disks were prepared per the standard XTEM procedure, these disks were then lapped using a tripod polishing device. A grid with a single 1mmx2mm hole was then glued with M-bond 610 to the polished side of the disk.

TEM examination of 2014-SiC metal matrix composite

1988 ◽  
Vol 46 ◽  
pp. 726-727
Author(s):  
M. G. Burke ◽  
M. N. Gungor ◽  
P. K. Liaw
Keyword(s):  
Metal Matrix Composite ◽  
Metal Matrix Composites ◽  
Matrix Composite ◽  
Metal Matrix ◽  
Tensile Deformation ◽  
Microstructural Characterization ◽  
Thin Foil ◽  
Matrix Alloy ◽  
Matrix Composites ◽  
Ion Milling

Aluminum-based metal matrix composites offer unique combinations of high specific strength and high stiffness. The improvement in strength and stiffness is related to the particulate reinforcement and the particular matrix alloy chosen. In this way, the metal matrix composite can be tailored for specific materials applications. The microstructural characterization of metal matrix composites is thus important in the development of these materials. In this study, the structure of a p/m 2014-SiC particulate metal matrix composite has been examined after extrusion and tensile deformation.Thin-foil specimens of the 2014-20 vol.% SiCp metal matrix composite were prepared by dimpling to approximately 35 μm prior to ion-milling using a Gatan Dual Ion Mill equipped with a cold stage. These samples were then examined in a Philips 400T TEM/STEM operated at 120 kV. Two material conditions were evaluated: after extrusion (80:1); and after tensile deformation at 250°C.

TEM characterization of silicon epitaxial layer grown on Si-TaS2, eutectic composites

1991 ◽  
Vol 49 ◽  
pp. 802-803
Author(s):  
C.M. Sung ◽  
M. Levinson ◽  
M. Tabasky ◽  
K. Ostreicher ◽  
B.M. Ditchek
Keyword(s):  
Substrate Surface ◽  
Bulk Sample ◽  
Surface Cleaning ◽  
Native Oxide ◽  
Czochralski Growth ◽  
Ion Milling ◽  
Cross Sectional ◽  
Cleaning Methods ◽  
Field Emission Cathodes

Directionally solidified Si/TaSi2 eutectic composites for the development of electronic devices (e.g. photodiodes and field-emission cathodes) were made using a Czochralski growth technique. High quality epitaxial growth of silicon on the eutectic composite substrates requires a clean silicon substrate surface prior to the growth process. Hence a preepitaxial surface cleaning step is highly desirable. The purpose of this paper is to investigate the effect of surface cleaning methods on the epilayer/substrate interface and the characterization of silicon epilayers grown on Si/TaSi2 substrates by TEM.Wafers were cut normal to the <111> growth axis of the silicon matrix from an approximately 1 cm diameter Si/TaSi2 composite boule. Four pre-treatments were employed to remove native oxide and other contaminants: 1) No treatment, 2) HF only; 3) HC1 only; and 4) both HF and HCl. The cross-sectional specimens for TEM study were prepared by cutting the bulk sample into sheets perpendicular to the TaSi2 fiber axes. The material was then prepared in the usual manner to produce samples having a thickness of 10μm. The final step was ion milling in Ar+ until breakthrough occurred. The TEM samples were then analyzed at 120 keV using the Philips EM400T.

Microstructural characterization of YBa2Cu3O7-x thin films formed by metalorganic CVD

1991 ◽  
Vol 49 ◽  
pp. 1080-1081
Author(s):  
P. Lu ◽  
W. Huang ◽  
C.S. Chern ◽  
Y.Q. Li ◽  
J. Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Film Growth ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Ion Milling ◽  
Conventional Grinding

The YBa2Cu3O7-x thin films formed by metalorganic chemical vapor deposition(MOCVD) have been reported to have excellent superconducting properties including a sharp zero resistance transition temperature (Tc) of 89 K and a high critical current density of 2.3x106 A/cm2 or higher. The origin of the high critical current in the thin film compared to bulk materials is attributed to its structural properties such as orientation, grain boundaries and defects on the scale of the coherent length. In this report, we present microstructural aspects of the thin films deposited on the (100) LaAlO3 substrate, which process the highest critical current density.Details of the thin film growth process have been reported elsewhere. The thin films were examined in both planar and cross-section view by electron microscopy. TEM sample preparation was carried out using conventional grinding, dimpling and ion milling techniques. Special care was taken to avoid exposure of the thin films to water during the preparation processes.

Transmission Electron Microscopy Studies of Aluminum Oxidation

1985 ◽  
Vol 43 ◽  
pp. 268-269
Author(s):  
J.Y. Lee
Keyword(s):  
Nucleation And Growth ◽  
Ion Milling ◽  
Cross Sectional ◽  
Polycrystalline Aluminum ◽  
Axis Orientation ◽  
Temperature Oxidation ◽  
Aluminum Oxidation ◽  
Transmission Electron ◽  
High Resolution Images ◽  
Argon Ion

In the oxidation of metals and alloys, microstructural features at the atomic level play an important role in the nucleation and growth of the oxide, but little is known about the atomic mechanisms of high temperature oxidation. The present paper describes current progress on crystallographic aspects of aluminum oxidation. The 99.999% pure, polycrystalline aluminum was chemically polished and oxidized in 1 atm air at either 550°C or 600°C for times from 0.5 hr to 4 weeks. Cross-sectional specimens were prepared by forming a sandwich with epoxy, followed by mechanical polishing and then argon ion milling. High resolution images were recorded in a <110>oxide zone-axis orientation with a JE0L JEM 200CX microscope operated at 200 keV.

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