Characterization of PECVD SixOyNz:H Films and its Correlation to Device Performance and Reliability

1994 ◽  
Vol 338 ◽  
Author(s):  
Mansour Moinpour ◽  
Ken Mack ◽  
Johnny Cham ◽  
Farhad Moghadam ◽  
Byron Williams
Keyword(s):  
Integrated Circuits ◽  
Rutherford Backscattering Spectrometry ◽  
Chemical Vapor ◽  
Ammonia Nitrogen ◽  
Silicon Oxynitride ◽  
Device Performance ◽  
Vis Spectroscopy ◽  
Oxynitride Film ◽  
Wafer Processing

ABSTRACTFor integrated circuits, the integrity and film quality of the final passivation layer plays an important role in the device performance and reliability. Hydrogenated amorphous silicon oxynitride (α-SixNyOz:H) films deposited by plasma enhanced chemical vapor deposition (PECVD) have been extensively used for final device passivation applications. In this paper, a detailed characterization of PECVD oxynitride process for 200 mm Si wafer processing is presented. Silicon oxynitride of various compositions were deposited by changing the amounts of silane, ammonia, nitrogen and nitrous oxide in the reactant gas stream. Ultraviolet/Visible (UV/VIS) spectroscopy, Fourier transform infrared (FTIR) spectroscopy, Rutherford backscattering spectrometry (RBS), and refractive index measurements were used to examine the variation in physical, optical and electrical properties. A correlation is observed between the oxynitride film composition, mainly N-H/Si-H ratio, and UV transmissivity (UV %T) which is of particular interest for memory applications. Effects of oxynitride film quality on e-test parameters and device performance are discussed.

Particle characterization of CVD tungsten metallization for 64 MBIT DRAM

1991 ◽  
Vol 49 ◽  
pp. 896-897
Author(s):  
Marylyn Bennett-Lilley ◽  
Thomas T.H. Fu ◽  
David D. Yin ◽  
R. Allen Bowling
Keyword(s):  
Chemical Vapor ◽  
Device Performance ◽  
Particle Characterization ◽  
Particle Generation ◽  
Tungsten Hexafluoride ◽  
Homogeneous Particle ◽  
Multiple Levels ◽  
Circuit Density ◽  
Sources Of Contamination

Chemical Vapor Deposition (CVD) tungsten metallization is used to increase VLSI device performance due to its low resistivity, and improved reliability over other metallization schemes. Because of its conformal nature as a blanket film, CVD-W has been adapted to multiple levels of metal which increases circuit density. It has been used to fabricate 16 MBIT DRAM technology in a manufacturing environment, and is the metallization for 64 MBIT DRAM technology currently under development. In this work, we investigate some sources of contamination. One possible source of contamination is impurities in the feed tungsten hexafluoride (WF6) gas. Another is particle generation from the various reactor components. Another generation source is homogeneous particle generation of particles from the WF6 gas itself. The purpose of this work is to investigate and analyze CVD-W process-generated particles, and establish a particle characterization methodology.

A Low Temperature Photonic Crystal Technology for Integration with Modern CMOS Technologies

2007 ◽  
Vol 990 ◽  
Author(s):  
Khadijeh Bayat ◽  
Mahdi Farrokh Baroughi ◽  
Sujeet K. Chaudhuri ◽  
Safieddin Safavi-Naeini
Keyword(s):  
Photonic Crystal ◽  
Low Temperature ◽  
Integrated Circuits ◽  
Gas Phase ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Refractive Indices ◽  
Optical Integrated Circuits ◽  
Silicon Based

ABSTRACTIn this paper, low temperature amorphous silicon oxynitride (a-SixOyNz:H) thin film technology is proposed for implementation of CMOS compatible photonic crystal (PC) based optical integrated circuits (OICs). The a-SixOyNz films of different refractive indices were developed by plasma enhanced chemical vapor deposition (PECVD) technique using silane, nitrous oxide, and ammonia as gas phase precursors at 300°C. The films with refractive index between 1.43 − 1.75 were obtained by changing gas flow ratios. Such thin films can be used as cladding and core layers in photonic crystal structure.The bandgap and guiding properties of the a-SixOyNz based PCs were simulated and was shown that the a-SixOyNz:H based PC technology offers larger feature sizes than a conventional silicon based photonic crystals.

Fabrication of Thin-Film Transistors Using PECVD-Grown Carbon Nanotubes and Their Application to Integrated Circuits

2012 ◽  
Vol 1451 ◽  
pp. 159-168
Author(s):  
Takashi Mizutani ◽  
Shigeru Kishimoto
Keyword(s):  
Integrated Circuits ◽  
Scanning Probe Microscopy ◽  
High Speed ◽  
Chemical Vapor ◽  
Ring Oscillator ◽  
Scanning Probe ◽  
Preferential Growth ◽  
Current Voltage ◽  
Current Voltage Characteristics

ABSTRACTMedium scale integrated circuits with 108 CNT-TFTs have been fabricated using CNTs grown by plasma enhanced chemical vapor deposition (PECVD) which has the advantage of preferential growth of CNTs with semiconducting behavior in the FET current–voltage characteristics. High-speed operation with a switching time of 0.51 μs/gate, which is highest in the CNT-TFT integrated circuits to our knowledge, was demonstrated by a 53-stage ring oscillator. Characterization of CNT-TFTs using scanning probe microscopy has also been performed. The island-like structure in the electrical properties of the CNT network was observed even in a high-density CNT network in the subthreshold regime. This was explained by the decrease of the effective number of CNTs which contribute the electrical conduction.

scholarly journals A Review: Preparation, Performance, and Applications of Silicon Oxynitride Film

Micromachines ◽  
2019 ◽  
Vol 10 (8) ◽  
pp. 552 ◽  
Author(s):  
Yue Shi ◽  
Liang He ◽  
Fangcao Guang ◽  
Luhai Li ◽  
Zhiqing Xin ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Functional Material ◽  
Preparation Methods ◽  
Non Volatile Memory ◽  
Recent Developments ◽  
Oxynitride Film ◽  
Tunable Refractive Index

Silicon oxynitride (SiNxOy) is a highly promising functional material for its luminescence performance and tunable refractive index, which has wide applications in optical devices, non-volatile memory, barrier layer, and scratch-resistant coatings. This review presents recent developments, and discusses the preparation methods, performance, and applications of SiNxOy film. In particular, the preparation of SiNxOy film by chemical vapor deposition, physical vapor deposition, and oxynitridation is elaborated in details.

LM-ACT for Imaging RAM Devices in X-ray Diffraction Topographs

1988 ◽  
Vol 32 ◽  
pp. 659-666 ◽  
Author(s):  
Warren T. Beard ◽  
Ronald W. Armstrong
Keyword(s):  
Integrated Circuits ◽  
Structural Characterization ◽  
Device Performance ◽  
X Ray Diffraction ◽  
Circuit Testing ◽  
Double Crystal ◽  
X Ray ◽  
Parametric Testing ◽  
Device Properties

Analysis of serai conductor material and associated integrated circuits (IC) is imperative for ensuring quality products. Currently, routine circuit testing is dominated by measurement of the optical and electrical material/device properties through final device performance and parametric testing.Characterization of the crystal microstructure still is not considered a routine process test. Structural characterization usually is based on double-crystal rocking curves, x-ray topography, or a combination of these techniques.

Intrinsic Stress of Pecvd Silicon Oxynitride Films Deposited in a Hot-Wall Reactor

1990 ◽  
Vol 188 ◽  
Author(s):  
K. Aite ◽  
R. Koekoek
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Chemical Vapor ◽  
Systematic Investigation ◽  
Silicon Oxynitride ◽  
Intrinsic Stress ◽  
Refractive Indices ◽  
Optimal Conditions ◽  
Annealing Temperatures ◽  
Chemical Vapor Deposited ◽  
Deposited Films

ABSTRACTPlasma enhanced chemical vapor deposited ( PECVD ) silicon oxynitride films with refractive indices varying from 1.65 to 1.85 have been deposited in a hot-wall reactor using a SiH4/NH3/N2O gas mixture. A systematic investigation of the variation of the intrinsic stress of the deposited films with the parameters of deposition and the properties of the films, has been carried out. Our results show that silicon oxynitride films deposited in optimal conditions can support annealing temperatures of 900°C without cracking. The mechanical stresses in the films were determined by the Newton's fringes technique and a surface profiler. The film thickness was measured by ellipsometry at a wavelength of 632.8 nm. Fourier transform infrared spectroscopy ( FTIR ) was used to measure the hydrogen content of the films. The composition of the silicon oxynitride films was determined by Auger electron spectroscopy ( AES ) and Rutherford backscattering spectrometry ( RBS ).

MOCVD Growth and Characterization of (BaxSr1−x)Ti1+yO3+z Thin Films for High Frequency Devices

1999 ◽  
Vol 603 ◽  
Author(s):  
P.K. Baumann ◽  
D.Y. Kaufman ◽  
S.K. Streiffer ◽  
J. IM ◽  
O. Auciello ◽  
...  
Keyword(s):  
Thin Films ◽  
Rutherford Backscattering Spectrometry ◽  
Substantial Reduction ◽  
Chemical Vapor ◽  
Electron Beam Evaporation ◽  
Large Area ◽  
Bst Thin Films ◽  
Mocvd Growth ◽  
Bst Films

AbstractWe have investigated the structural and electrical characteristics of (BaxSr1−x)Ti1+yO3+z (BST) thin films. The BST thin films were deposited at 650°C on platinized silicon with good thickness and composition uniformity using a large area, vertical liquid-delivery metalorganic chemical vapor deposition (MOCVD) system. The (Ba+Sr)/Ti ratio of the BST films was varied from 0.96 to 1.05 at a fixed Ba/Sr ratio of 70/30, as determined using x-ray fluorescence spectroscopy (XRF) and Rutherford backscattering spectrometry (RBS). Patterned Pt top electrodes were deposited onto the BST films at 350°C through a shadow mask using electron beam evaporation. Annealing the entire capacitor structure in air at 700°C after deposition of top electrodes resulted in a substantial reduction of the dielectric loss. Useful dielectric tunability as high as 2.3:1 was measured.

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