Effect of copper content on reaction compound formation in Al-Cu/Ti-W bilayers

1992 ◽  
Vol 50 (2) ◽  
pp. 1416-1417
Author(s):  
M. Park ◽  
S.J. Krause ◽  
S.R. Wilson
Keyword(s):  
Integrated Circuits ◽  
Barrier Layer ◽  
Thermal Processing ◽  
Copper Content ◽  
Alloy Film ◽  
Al Alloy ◽  
Si Substrate ◽  
Compound Formation ◽  
Cu Content ◽  
Effect Of Copper

In modern integrated circuits, a barrier layer of Ti-W is commonly used to reduce interdiffusion between Al-alloy interconnects and the Si substrate for multilevel metallization. Deterioration of the metallization layers may occur by the interaction of the Al-alloy film with the Ti-W sublayer during post-metallization thermal processing, resulting in the formation of aluminide reaction compounds, such as Al12W and Al5W. The reaction morphologies of the Al film with other transition metals, such as Ti4 and Hf5, have been studied. The morphologies of the compounds are planar for Al3Ti and spiked for Al3Hf, respectively. When Cu solute is added to Al, it has a significant effect on the growth and morphology of these reaction compounds. Although Al-Cu/Ti-W films are now extensively used for multilevel metallization, the effect of Cu content on the reaction growth and morphology of the compound has not been studied in detail. In this work, we report on the effect of Cu content on the reaction between the Al-Cu layer and Ti-W barrier layer, and the resulting morphology.

Comparison of Sputtered Titanium Nitride on Silicon Dioxide and Aluminum-Alloy Thin Films

1997 ◽  
Vol 3 (S2) ◽  
pp. 469-470
Author(s):  
J.L. Drown ◽  
S.M. Merchant ◽  
M.E. Gross ◽  
D. Eaglesham ◽  
L.A. Giannuzzi ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Titanium Nitride ◽  
Physical Vapor Deposition ◽  
Semiconductor Industry ◽  
Microstructural Characterization ◽  
Growth Conditions ◽  
Alloy Film ◽  
Al Alloy ◽  
Orientation Relationships ◽  
Materials Used

Titanium nitride (TiN) films are used as anti-reflection coatings (ARC) on aluminum (Al) films to facilitate lithography processes during multilevel metallization for the manufacture of integrated circuits on silicon-based (Si) semiconductor devices. It is generally accepted in the literature that the microstructure of multilevel metal stacks is influenced by the texture of the substrate. For the case of interconnect materials used in the semiconductor industry, a typical metal stack is as follows: Titanium/Titanium Nitride/Al-alloy/ARC-Titanium Nitride. The Ti/TiN layer underneath the Al-alloy film is used as a barrier stack to prevent junction spiking. The Ti/TiN underlayer also determines the growth conditions (crystallography and orientation relationships) of the subsequent Al-alloy film.This study focuses on the microstructural characterization of the ARC-TiN layer on Si-oxide and Ti/TiN/Al-alloy substrates that are fabricated under similar conditions using conventional physical vapor deposition (PVD - sputtering) techniques. The ARC-TiN microstructure was investigated by transmission electron microscopy (TEM) using a Philips EM430 operating at 300 kV.

Stress Relaxation and the Formation of Silicides in the Process of the Crystallization of NI-NB Films on SI

1991 ◽  
Vol 49 ◽  
pp. 898-899
Author(s):  
N. Rozhanski ◽  
V. Lifshitz
Keyword(s):  
Thin Films ◽  
Stress Relaxation ◽  
Integrated Circuits ◽  
Direct Evidence ◽  
Alloy Film ◽  
Diffusion Barriers ◽  
Effective Barrier

Thin films of amorphous Ni-Nb alloys are of interest since they can be used as diffusion barriers for integrated circuits on Si. A native SiO2 layer is an effective barrier for Ni diffusion but it deformation during the crystallization of the alloy film lead to the appearence of diffusion fluxes through it and the following formation of silicides. This study concerns the direct evidence of the action of stresses in the process of the crystallization of Ni-Nb films on Si and the structure of forming NiSi2 islands.

Fluorocarbon Precursor for High Aspect Ratio via Milling in Focused Ion Beam Modification of Integrated Circuits

2004 ◽  
Author(s):  
Valery Ray
Keyword(s):  
Side Effects ◽  
Aspect Ratio ◽  
Integrated Circuits ◽  
High Aspect Ratio ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Enabling Technology ◽  
Si Substrate ◽  
Ion Beam Modification ◽  
The Past

Abstract Gas Assisted Etching (GAE) is the enabling technology for High Aspect Ratio (HAR) circuit access via milling in Focused Ion Beam (FIB) circuit modification. Metal interconnect layers of microelectronic Integrated Circuits (ICs) are separated by Inter-Layer Dielectric (ILD) materials, therefore HAR vias are typically milled in dielectrics. Most of the etching precursor gases presently available for GAE of dielectrics on commercial FIB systems, such as XeF2, Cl2, etc., are also effective etch enhancers for either Si, or/and some of the metals used in ICs. Therefore use of these precursors for via milling in dielectrics may lead to unwanted side effects, especially in a backside circuit edit approach. Making contacts to the polysilicon lines with traditional GAE precursors could also be difficult, if not impossible. Some of these precursors have a tendency to produce isotropic vias, especially in Si. It has been proposed in the past to use fluorocarbon gases as precursors for the FIB milling of dielectrics. Preliminary experimental evaluation of Trifluoroacetic (Perfluoroacetic) Acid (TFA, CF3COOH) as a possible etching precursor for the HAR via milling in the application to FIB modification of ICs demonstrated that highly enhanced anisotropic milling of SiO2 in HAR vias is possible. A via with 9:1 aspect ratio was milled with accurate endpoint on Si and without apparent damage to the underlying Si substrate.

Effect of copper content on the biodegradation behavior of Fe-Mn-C alloy system

2021 ◽  
pp. 1-11
Author(s):  
Sheng Wei ◽  
Zheng Ma ◽  
Lili Tan ◽  
Junxiu Chen ◽  
R.D.K. Misra ◽  
...  
Keyword(s):  
Copper Content ◽  
Alloy System ◽  
Effect Of Copper

Sputtered Fe-Si-Al Alloy Film Video Head

1987 ◽  
Vol 2 (7) ◽  
pp. 657-658 ◽  
Author(s):  
K. Saito ◽  
T. Mori ◽  
T. Shimizu
Keyword(s):  
Alloy Film ◽  
Al Alloy

scholarly journals Effect of Cu Content on Performance of Sn-Zn-Cu Lead-Free Solder Alloys Designed by Cluster-Plus-Glue-Atom Model

Materials ◽  
2021 ◽  
Vol 14 (9) ◽  
pp. 2335
Author(s):  
Jialong Qiu ◽  
Yanzhi Peng ◽  
Peng Gao ◽  
Caiju Li
Keyword(s):  
Tensile Strength ◽  
Solder Alloy ◽  
Tensile Tests ◽  
Melting Behavior ◽  
Second Phase ◽  
Solder Alloys ◽  
Cu Content ◽  
Diffusion Force ◽  
Fine Microstructure ◽  
Effect Of Copper

The mechanical properties of solder alloys are a performance that cannot be ignored in the field of electronic packaging. In the present study, novel Sn-Zn solder alloys were designed by the cluster-plus-glue-atom (CPGA) model. The effect of copper (Cu) addition on the microstructure, tensile properties, wettability, interfacial characterization and melting behavior of the Sn-Zn-Cu solder alloys were investigated. The Sn29Zn4.6Cu0.4 solder alloy exhibited a fine microstructure, but the excessive substitution of the Cu atoms in the CPGA model resulted in extremely coarse intermetallic compound (IMC). The tensile tests revealed that with the increase in Cu content, the tensile strength of the solder alloy first increased and then slightly decreased, while its elongation increased slightly first and then decreased slightly. The tensile strength of the Sn29Zn4.6Cu0.4 solder alloy reached 95.3 MPa, which was 57% higher than the plain Sn-Zn solder alloy, which is attributed to the fine microstructure and second phase strengthening. The spreadability property analysis indicated that the wettability of the Sn-Zn-Cu solder alloys firstly increased and then decreased with the increase in Cu content. The spreading area of the Sn29Zn0.6Cu0.4 solder alloy was increased by 27.8% compared to that of the plain Sn-Zn solder due to Cu consuming excessive free state Zn. With the increase in Cu content, the thickness of the IMC layer decreased owing to Cu diminishing the diffusion force of Zn element to the interface.

Effect of copper content on optostructural, morphological and photoelectrochemical properties of MoBi2−x Cu x Se4 thin films

2013 ◽  
Vol 48 (20) ◽  
pp. 7300-7311 ◽  
Author(s):  
Suvarta D. Kharade ◽  
Nita B. Pawar ◽  
Sawanta S. Mali ◽  
Chang K. Hong ◽  
Pramod S. Patil ◽  
...  
Keyword(s):  
Thin Films ◽  
Copper Content ◽  
Photoelectrochemical Properties ◽  
Effect Of Copper

scholarly journals The effect of copper fungicides on the rate of photosynthesis and the transpiration of hop plants

2011 ◽  
pp. 117-123
Author(s):  
Jaroslav Pokorny ◽  
Josef Pulkrábek ◽  
Karel Krofta ◽  
Josef Ježek
Keyword(s):  
Photosynthetic Rate ◽  
Copper Content ◽  
Copper Fungicides ◽  
Before And After ◽  
Elemental Copper ◽  
Rate Of Photosynthesis ◽  
Accredited Laboratory ◽  
Effect Of Copper ◽  
Copper Fungicide ◽  
Infrared Analyzer

The paper evaluates the effect of copper fungicide spraying on the rate of photosynthesis and transpiration of hops, the influence of spraying on the elemental copper content in the leaves and cones hop variety Agnus. Photosynthetic rate was measured by LC pro+ (infrared analyzer) in the Hop Research Institute Saaz in the field in some periods of 2008, 2009 and 2010. Dry cones and leaf samples (taken before and after application of copper fungicides) were analyzed in an accredited laboratory for elemental copper.

scholarly journals Effect of copper content on the tensile elongation of Al–Cu–Mn–Zr alloys: Experiments and finite element simulations

2020 ◽  
Vol 772 ◽  
pp. 138801 ◽  
Author(s):  
Sumit Bahl ◽  
Xiaohua Hu ◽  
Eric Hoar ◽  
Jiahao Cheng ◽  
J. Allen Haynes ◽  
...  
Keyword(s):  
Finite Element ◽  
Copper Content ◽  
Tensile Elongation ◽  
Finite Element Simulations ◽  
Effect Of Copper ◽  
Zr Alloys
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