“dual phase” thin films prepared by deposition of aluminum on liquid nucleant gallium layers
Aluminum thin films have been universally employed as interconnections in integrated circuits for the last quarter of a century. However, during this time Al metallization has never been totally immune from assorted reliability problems. This present research involves preparation and characterization of “dual phase” thin films, comprised of Al (or a transition metal) vacuum evaporated onto a liquid Ga (or other low melting temperature metal) nucleant layer. Ga is well known for causing grain boundary embrittlement in structural Al alloys. However, the Ga may well enhance the mechanical properties in Al thin films used as interconnect metallization, where this “dual phase” microstructure will prevent the buildup of stress that has historically resulted in electromigration failures in semiconductor devices. In addition, the presence of a liquid nucleant layer results in thin films (up to 2 μm thick) having surface roughness of the order of the film thickness, which in turn would enhance the bondability of such films.