Microstructure and domain engineering of lithium niobate crystal films for integrated photonic applications

AbstractRecently, integrated photonics has attracted considerable interest owing to its wide application in optical communication and quantum technologies. Among the numerous photonic materials, lithium niobate film on insulator (LNOI) has become a promising photonic platform owing to its electro-optic and nonlinear optical properties along with ultralow-loss and high-confinement nanophotonic lithium niobate waveguides fabricated by the complementary metal–oxide–semiconductor (CMOS)-compatible microstructure engineering of LNOI. Furthermore, ferroelectric domain engineering in combination with nanophotonic waveguides on LNOI is gradually accelerating the development of integrated nonlinear photonics, which will play an important role in quantum technologies because of its ability to be integrated with the generation, processing, and auxiliary detection of the quantum states of light. Herein, we review the recent progress in CMOS-compatible microstructure engineering and domain engineering of LNOI for integrated lithium niobate photonics involving photonic modulation and nonlinear photonics. We believe that the great progress in integrated photonics on LNOI will lead to a new generation of techniques. Thus, there remains an urgent need for efficient methods for the preparation of LNOI that are suitable for large-scale and low-cost manufacturing of integrated photonic devices and systems.

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A Smart Floating Gate Transistor with Two Control Gates for Active Noise Control

Micromachines ◽

10.3390/mi10110722 ◽

2019 ◽

Vol 10 (11) ◽

pp. 722

Author(s):

Mao ◽

Yang ◽

Ma ◽

Yan ◽

Zhang

Keyword(s):

Large Scale ◽

Noise Control ◽

Low Cost ◽

Active Noise Control ◽

Complementary Metal Oxide Semiconductor ◽

Floating Gate ◽

Oxide Semiconductor ◽

Cmos Process ◽

Active Noise ◽

Floating Gate Transistor

A smart floating gate transistor with two control gates was proposed for active noise control in bioelectrical signal measurement. The device, which is low cost and capable of large-scale integration, was implemented in a standard single-poly complementary metal–oxide–semiconductor (CMOS) process. A model of the device was developed to demonstrate the working principle. Theoretical analysis and simulation results proved the superposition of the two control gates. A series of test experiments were carried out and the results showed that the device was in accordance with the basic electrical characteristics of a floating gate transistor, including the current–voltage (I–V) characteristics and the threshold characteristics observed on the two control gates. Based on the source follower circuit, the experimental results proved that the device can reduce interference by more than 29 dB, which demonstrates the feasibility of the proposed device for active noise control.

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An ISFET Microarray Sensor System for Detecting the DNA Base Pairing

Micromachines ◽

10.3390/mi12070731 ◽

2021 ◽

Vol 12 (7) ◽

pp. 731

Author(s):

Peng Sun ◽

Yongxin Cong ◽

Ming Xu ◽

Huaqing Si ◽

Dan Zhao ◽

...

Keyword(s):

Dna Sequencing ◽

Large Scale ◽

Ph Value ◽

Low Cost ◽

Complementary Metal Oxide Semiconductor ◽

Fluorescent Labeling ◽

Oxide Semiconductor ◽

Sensor System ◽

Base Pairing ◽

Dna Base

Deoxyribonucleic acid (DNA) sequencing technology provides important data for the disclosure of genetic information and plays an important role in gene diagnosis and gene therapy. Conventional sequencing devices are expensive and require large and bulky optical structures and additional fluorescent labeling steps. Sequencing equipment based on a semiconductor chip has the advantages of fast sequencing speed, low cost and small size. The detection of DNA base pairing is the most important step in gene sequencing. In this study, a large-scale ion-sensitive field-effect transistor (ISFET) array chip with more than 13 million sensitive units is successfully designed for detecting the DNA base pairing. DNA base pairing is successfully detected by the sensor system, which includes the ISFET microarray chip, microfluidic system, and test platform. The chip achieves a high resolution of at least 0.5 mV, thus enabling the recognition of the change of 0.01 pH value. This complementary metal-oxide semiconductor (CMOS) compatible and cost-efficient sensor array chip, together with other specially designed components, can form a complete DNA sequencing system with potential application in the molecular biology fields.

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Low-Cost Microbolometer Type Infrared Detectors

Micromachines ◽

10.3390/mi11090800 ◽

2020 ◽

Vol 11 (9) ◽

pp. 800

Author(s):

Le Yu ◽

Yaozu Guo ◽

Haoyu Zhu ◽

Mingcheng Luo ◽

Ping Han ◽

...

Keyword(s):

Integrated Circuit ◽

Focal Plane ◽

Technological Development ◽

Low Cost ◽

Complementary Metal Oxide Semiconductor ◽

Micro Electro Mechanical System ◽

Focal Plane Arrays ◽

Oxide Semiconductor ◽

Cmos Process ◽

Cmos Compatible

The complementary metal oxide semiconductor (CMOS) microbolometer technology provides a low-cost approach for the long-wave infrared (LWIR) imaging applications. The fabrication of the CMOS-compatible microbolometer infrared focal plane arrays (IRFPAs) is based on the combination of the standard CMOS process and simple post-CMOS micro-electro-mechanical system (MEMS) process. With the technological development, the performance of the commercialized CMOS-compatible microbolometers shows only a small gap with that of the mainstream ones. This paper reviews the basics and recent advances of the CMOS-compatible microbolometer IRFPAs in the aspects of the pixel structure, the read-out integrated circuit (ROIC), the focal plane array, and the vacuum packaging.

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Process Design Kit and Design Automation for Flexible Hybrid Electronics

Journal of Microelectronics and Electronic Packaging ◽

10.4071/imaps.925849 ◽

2019 ◽

Vol 16 (3) ◽

pp. 117-123

Author(s):

Tsung-Ching Huang ◽

Ting Lei ◽

Leilai Shao ◽

Sridhar Sivapurapu ◽

Madhavan Swaminathan ◽

...

Keyword(s):

Process Design ◽

Design Automation ◽

High Performance ◽

Large Scale ◽

Low Cost ◽

Thin Film Transistor ◽

Solution Process ◽

Oxide Semiconductor ◽

Wearable Electronics ◽

Wide Range

Abstract High-performance low-cost flexible hybrid electronics (FHE) are desirable for applications such as internet of things and wearable electronics. Carbon nanotube (CNT) thin-film transistor (TFT) is a promising candidate for high-performance FHE because of its high carrier mobility, superior mechanical flexibility, and material compatibility with low-cost printing and solution processes. Flexible sensors and peripheral CNT-TFT circuits, such as decoders, drivers, and sense amplifiers, can be printed and hybrid-integrated with thinned (<50 μm) silicon chips on soft, thin, and flexible substrates for a wide range of applications, from flexible displays to wearable medical devices. Here, we report (1) a process design kit (PDK) to enable FHE design automation for large-scale FHE circuits and (2) solution process-proven intellectual property blocks for TFT circuits design, including Pseudo-Complementary Metal-Oxide-Semiconductor (Pseudo-CMOS) flexible digital logic and analog amplifiers. The FHE-PDK is fully compatible with popular silicon design tools for design and simulation of hybrid-integrated flexible circuits.

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The Effect of Strain on the Formation of Dislocations at the SiGe/Si Interface

MRS Bulletin ◽

10.1557/s0883769400035326 ◽

1996 ◽

Vol 21 (4) ◽

pp. 38-44 ◽

Cited By ~ 62

Author(s):

F.K. LeGoues

Keyword(s):

Metal Oxide ◽

High Speed ◽

High Performance ◽

Field Effect Transistors ◽

Low Cost ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Design Rule ◽

Strained Si

Recently much interest has been devoted to Si-based heteroepitaxy, and in particular, to the SiGe/Si system. This is mostly for economical reasons: Si-based technology is much more advanced, is widely available, and is cheaper than GaAs-based technology. SiGe opens the door to the exciting (and lucrative) area of Si-based high-performance devices, although optical applications are still limited to GaAs-based technology. Strained SiGe layers form the base of heterojunction bipolar transistors (HBTs), which are currently used in commercial high-speed analogue applications. They promise to be low-cost compared to their GaAs counterparts and give comparable performance in the 2-20-GHz regime. More recently we have started to investigate the use of relaxed SiGe layers, which opens the door to a wider range of application and to the use of SiGe in complementary metal oxide semiconductor (CMOS) devices, which comprise strained Si and SiGe layers. Some recent successes include record-breaking low-temperature electron mobility in modulation-doped layers where the mobility was found to be up to 50 times better than standard Si-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Even more recently, SiGe-basedp-type MOSFETS were built with oscillation frequency of up to 50 GHz, which is a new record, in anyp-type material for the same design rule.

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Ultrasensitive broadband photodetectors based on two-dimensional Bi2O2Te films

10.21203/rs.3.rs-294003/v1 ◽

2021 ◽

Author(s):

Pin Tian ◽

Hongbo Wu ◽

Libin Tang ◽

Jinzhong Xiang ◽

Rongbin Ji ◽

...

Keyword(s):

Large Scale ◽

2D Materials ◽

Complementary Metal Oxide Semiconductor ◽

Cmos Technology ◽

Photocurrent Density ◽

Short Wave ◽

Oxide Semiconductor ◽

Light Illumination ◽

Two Dimensional ◽

Weak Light

Abstract Two-dimensional (2D) materials exhibit many unique optical and electronic properties that are highly desirable for application in optoelectronics. Here, we report the study of photodetector based on 2D Bi2O2Te grown on n-Si substrate. The 2D Bi2O2Te material was transformed from sputtered Bi2Te3 ultrathin film after rapid annealing at 400 ℃ for 10 min in air atmosphere. The photodetector was capable of detecting a broad wavelength from 210 nm to 2.4 μm with excellent responsivity of up to 3x105 and 2x104 AW-1, and detectivity of 4x1015 and 2x1014 Jones at deep ultraviolet (UV) and short-wave infrared (SWIR) under weak light illumination, respectively. The effectiveness of 2D materials in weak light detection was investigated by analysis of the photocurrent density contribution. Importantly, the facile growth process with low annealing temperature would allow direct large-scale integration of the 2D Bi2O2Te materials with complementary metal-oxide–semiconductor (CMOS) technology.

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Neuromorphic Spiking Neural Networks and Their Memristor-CMOS Hardware Implementations

Materials ◽

10.3390/ma12172745 ◽

2019 ◽

Vol 12 (17) ◽

pp. 2745 ◽

Cited By ~ 6

Author(s):

Luis Camuñas-Mesa ◽

Bernabé Linares-Barranco ◽

Teresa Serrano-Gotarredona

Keyword(s):

Neural Networks ◽

Learning Strategies ◽

Large Scale ◽

Sensory Information ◽

Complementary Metal Oxide Semiconductor ◽

Cmos Technology ◽

Oxide Semiconductor ◽

Hardware Implementations ◽

Learning Capabilities ◽

Promising Solution

Inspired by biology, neuromorphic systems have been trying to emulate the human brain for decades, taking advantage of its massive parallelism and sparse information coding. Recently, several large-scale hardware projects have demonstrated the outstanding capabilities of this paradigm for applications related to sensory information processing. These systems allow for the implementation of massive neural networks with millions of neurons and billions of synapses. However, the realization of learning strategies in these systems consumes an important proportion of resources in terms of area and power. The recent development of nanoscale memristors that can be integrated with Complementary Metal–Oxide–Semiconductor (CMOS) technology opens a very promising solution to emulate the behavior of biological synapses. Therefore, hybrid memristor-CMOS approaches have been proposed to implement large-scale neural networks with learning capabilities, offering a scalable and lower-cost alternative to existing CMOS systems.

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Up-Conversion Sensing of 2D Spatially-Modulated Infrared Information-Carrying Beams with Si-Based Cameras

Sensors ◽

10.3390/s20123610 ◽

2020 ◽

Vol 20 (12) ◽

pp. 3610

Author(s):

Adrián J. Torregrosa ◽

Emir Karamehmedović ◽

Haroldo Maestre ◽

María Luisa Rico ◽

Juan Capmany

Keyword(s):

Optical Communications ◽

Near Infrared ◽

Nonlinear Crystal ◽

Signal To Noise Ratio ◽

Low Cost ◽

Infrared Image ◽

Complementary Metal Oxide Semiconductor ◽

Local Oscillator ◽

Oxide Semiconductor ◽

Free Space Optical

Up-conversion sensing based on optical heterodyning of an IR (infrared) image with a local oscillator laser wave in a nonlinear optical sum-frequency mixing (SFM) process is a practical solution to circumvent some limitations of IR image sensors in terms of signal-to-noise ratio, speed, resolution, or cooling needs in some demanding applications. In this way, the spectral content of an IR image can become spectrally shifted to the visible/near infrared (VIS/NWIR) and then detected with silicon focal plane arrayed sensors (Si-FPA), such as CCD/CMOS (charge-coupled and complementary metal-oxide-semiconductor devices). This work is an extension of a previous study where we recently introduced this technique in the context of optical communications, in particular in FSOC (free-space optical communications). Herein, we present an image up-conversion system based on a 1064 nm Nd3+: YVO4 solid-state laser with a KTP (potassium titanyl phosphate) nonlinear crystal located intra-cavity where a laser beam at 1550 nm 2D spatially-modulated with a binary Quick Response (QR) code is mixed, giving an up-converted code image at 631 nm that is detected with an Si-based camera. The underlying technology allows for the extension of other IR spectral allocations, construction of compact receivers at low cost, and provides a natural way for increased protection against eavesdropping.

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Light-Free Cross-Talk Analysis of a CMOS Infrared Detector Array

Proceedings ◽

10.3390/proceedings2020056010 ◽

2020 ◽

Vol 56 (1) ◽

pp. 10

Author(s):

Ying Dai ◽

Syed Zeeshan Ali ◽

Richard Hopper ◽

Claudio Falco ◽

Daniel Popa ◽

...

Keyword(s):

Cross Talk ◽

Low Cost ◽

Infrared Detector ◽

Complementary Metal Oxide Semiconductor ◽

High Volume ◽

Oxide Semiconductor ◽

Simple Method ◽

Monolithically Integrated ◽

Thermal Cameras ◽

Thermal Imagers

Low-cost infrared (IR) thermal cameras are powering a rising market of industrial and consumer applications. Complementary metal-oxide-semiconductor (CMOS)-based thermopile arrays are proven thermal imagers that can be monolithically integrated into low-cost and low-power-consumption formats for high-volume manufacturability. Here we present a simple method to evaluate the cross-talk of these arrays and propose a numerical model for device optimization.

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Lead Selenide Polycrystalline Coatings Sensitized Using Diffusion and Ion Beam Methods for Uncooled Mid-Infrared Photodetection

Coatings ◽

10.3390/coatings8120444 ◽

2018 ◽

Vol 8 (12) ◽

pp. 444 ◽

Cited By ~ 5

Author(s):

Hao Yang ◽

Xiaojiang Li ◽

Guodong Wang ◽

Jianbang Zheng

Keyword(s):

High Speed ◽

Large Scale ◽

Low Cost ◽

Ion Beam ◽

Lead Selenide ◽

Cmos Technology ◽

Oxide Semiconductor ◽

Recombination Suppression ◽

Mid Infrared ◽

Physical Effects

Polycrystalline lead selenide material that is processed after a sensitization technology offers the additional physical effects of carrier recombination suppression and carrier transport manipulation, making it sufficiently sensitive to mid-infrared radiation at room temperature. Low-cost and large-scale integration with existing electronic platforms such as complementary metal–oxide–semiconductor (CMOS) technology and multi-pixel readout electronics enable a photodetector based on polycrystalline lead selenide coating to work in high-speed, low-cost, and low-power consumption applications. It also shows huge potential to compound with other materials or structures, such as the metasurface for novel optoelectronic devices and more marvelous properties. Here, we provide an overview and evaluation of the preparations, physical effects, properties, and potential applications, as well as the optoelectronic enhancement mechanism, of lead selenide polycrystalline coatings.

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