Open-circuit-voltage shift of over 0.5 V in organic photovoltaic cells induced by a minor structural difference in alkyl substituents

The cause of a large shift in open-circuit voltage induced by a minor difference in end-alkyl groups of p-type small molecules is examined via X-ray diffraction and computation, revealing a critical impact of molecular packing.

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Fabrication of TiO2 Nanotubes Array by Anodization for DSSC

Materials Science Forum ◽

10.4028/www.scientific.net/msf.743-744.920 ◽

2013 ◽

Vol 743-744 ◽

pp. 920-925

Author(s):

Hong Zhou Yan ◽

Jun You Yang ◽

Shuang Long Feng ◽

Ming Liu ◽

Jiang Ying Peng ◽

...

Keyword(s):

Fill Factor ◽

Open Circuit Voltage ◽

Short Circuit ◽

Photovoltaic Performance ◽

Short Circuit Current ◽

Short Circuit Current Density ◽

Open Circuit ◽

Tetrabutyl Titanate ◽

X Ray Diffraction ◽

X Ray

TiO2 nanotubes array was fabricated by anodization. Effect of reaction duration on the morphology of TiO2 nanotube arrays was studied detailedly. The structure and morphology of the prepared nanotubes array was characterized by X-ray diffraction and scanning electron microscopy, respectively. The fabricated TiO2 arrays were peeled off and adhered to FTO glass with adhesive (mixture of tetrabutyl titanate and polyethylene glycol), then they were sintered at 450 for photoanode of DSSC. The photovoltaic performance of the prepared sample as the DSSC anode was investigated. An open circuit voltage of 0.69V and a short circuit current density of 7.78mA/cm2 were obtained, and the fill factor and the convert efficiency were 0.517 and 2.78%, respectively.

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Dependence of material properties and photovoltaic performance of triple cation tin perovskites on the iodide to bromide ratio

Monatshefte für Chemie - Chemical Monthly ◽

10.1007/s00706-019-02503-6 ◽

2019 ◽

Vol 150 (11) ◽

pp. 1921-1927 ◽

Cited By ~ 1

Author(s):

Stefan Weber ◽

Thomas Rath ◽

Birgit Kunert ◽

Roland Resel ◽

Theodoros Dimopoulos ◽

...

Keyword(s):

Material Properties ◽

Fill Factor ◽

Open Circuit Voltage ◽

Short Circuit ◽

Photovoltaic Performance ◽

Short Circuit Current ◽

Short Circuit Current Density ◽

Open Circuit ◽

X Ray Diffraction ◽

X Ray

Abstract In this work, the influence of a partial introduction of bromide (x = 0–0.33) into MA0.75FA0.15PEA0.1Sn(BrxI1−x)3 (MA: methylammonium, FA: formamidinium, PEA: phenylethylammonium) triple cation tin perovskite on the material properties and photovoltaic performance is investigated and characterized. The introduction of bromide shifts the optical band gap of the perovskite films from 1.29 eV for the iodide-based perovskite to 1.50 eV for the perovskite with a bromide content of x = 0.33. X-ray diffraction measurements reveal that the size of the unit cell is also gradually reduced based on the incorporation of bromide. Regarding the photovoltaic performance of the perovskite films, it is shown that already small amounts of bromide (x = 0.08) in the perovskite system increase the open circuit voltage, short circuit current density and fill factor. The maximum power conversion efficiency of 4.63% was obtained with a bromide content of x = 0.25, which can be ascribed to the formation of homogeneous thin films in combination with higher values of the open circuit voltage. Upon introduction of a higher amount of bromide (x = 0.33), the perovskite absorber layers form pinholes, thus reducing the overall device performance. Graphic abstract

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Enhancement of Solar Cell Performance of Electrodeposited Ti/n-Cu2O/p-Cu2O/Au Homojunction Solar Cells by Interface and Surface Modification

Crystals ◽

10.3390/cryst10070609 ◽

2020 ◽

Vol 10 (7) ◽

pp. 609 ◽

Cited By ~ 1

Author(s):

Charith Jayathilaka ◽

Loku Singgappulige Rosantha Kumara ◽

Koji Ohara ◽

Chulho Song ◽

Shinji Kohara ◽

...

Keyword(s):

Solar Cell ◽

Current Density ◽

Photoelectron Spectroscopy ◽

Open Circuit Voltage ◽

Short Circuit ◽

High Energy ◽

Open Circuit ◽

X Ray Diffraction ◽

Solar Cell Performance ◽

X Ray

Cuprous oxide (Cu2O) homojunction thin films on Ti substrates were fabricated by an electrochemical deposition in which a p-Cu2O layer was deposited on an n-Cu2O layer by carefully controlled bath conditions. It was found that the open-circuit voltage of the homojunction solar cell was significantly influenced by the pH of the lactate bath. The variation of the pH was used to achieve the best possible crystal orientation for homojunctions. The crystallinity and morphology of the products were characterized by X-ray diffraction (XRD), high-energy x-ray diffraction (HEXRD), and scanning electron microscopy (SEM). The current density voltage (J-V) analysis showed that the sulfur treatment and annealing enhanced the photocurrent by ten-fold compared to the untreated and unannealed homojunction solar cell. X-ray photoelectron spectroscopy (XPS) studies confirmed that the sulfur treatment eliminated the surface CuO and formed a thin layer of CuS, which was very useful to make the front Ohmic contact. Transient measurements confirmed that the p-type Cu2O layer, which was subjected to sulfur treatment, significantly reduced the recombination, thus enhancing the efficiency of the solar cell. The best sulfur treated annealed Ti/n-Cu2O/p-Cu2O/Au solar cell produced an energy conversion efficiency of 2.64% with an open-circuit voltage of 490 mV and a short circuit current density of 12.8 mA cm−2 under AM 1.5 illumination.

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5-Iodo-1-Arylpyrazoles as Potential Benchmarks for Investigating the Tuning of the Halogen Bonding

Crystals ◽

10.3390/cryst10121149 ◽

2020 ◽

Vol 10 (12) ◽

pp. 1149

Author(s):

Denisa Dumitrescu ◽

Sergiu Shova ◽

Isabela C. Man ◽

Mino R. Caira ◽

Marcel Mirel Popa ◽

...

Keyword(s):

Solid State ◽

Small Molecules ◽

Halogen Bond ◽

Halogen Bonding ◽

Halogen Bonds ◽

X Ray Diffraction ◽

Aryl Ring ◽

X Ray ◽

Alkyl Groups ◽

Hirshfeld Analysis

5-Iodo-1-arylpyrazoles are interesting templates for investigating the halogen bond propensity in small molecules other than the already well-known halogenated molecules such as tetrafluorodiiodobenzene. Herein, we present six compounds with different substitution on the aryl ring attached at position 1 of the pyrazoles and investigate them in the solid state in order to elucidate the halogen bonding significance to the crystallographic landscape of such molecules. The substituents on the aryl ring are generally combinations of halogen atoms (Br, Cl) and various alkyl groups. Observed halogen bonding types spanned by these six 5-iodopyrazoles included a wide variety, namely, C–I⋯O, C–I⋯π, C–I⋯Br, C–I⋯N and C–Br⋯O interactions. By single crystal X-ray diffraction analysis combined with the descriptive Hirshfeld analysis, we discuss the role and influence of the halogen bonds among the intermolecular interactions.

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X-ray and Neutron Study on the Structure of Hydrous SiO2 Glass up to 10 GPa

Minerals ◽

10.3390/min10010084 ◽

2020 ◽

Vol 10 (1) ◽

pp. 84 ◽

Cited By ~ 2

Author(s):

Satoru Urakawa ◽

Toru Inoue ◽

Takanori Hattori ◽

Asami Sano-Furukawa ◽

Shinji Kohara ◽

...

Keyword(s):

Oxide Glasses ◽

Void Space ◽

X Ray Diffraction ◽

Amorphous Sio2 ◽

Sio2 Glass ◽

X Ray ◽

X Ray Scattering ◽

Medium Range ◽

Two Phases ◽

A Minor

The structure of hydrous amorphous SiO2 is fundamental in order to investigate the effects of water on the physicochemical properties of oxide glasses and magma. The hydrous SiO2 glass with 13 wt.% D2O was synthesized under high-pressure and high-temperature conditions and its structure was investigated by small angle X-ray scattering, X-ray diffraction, and neutron diffraction experiments at pressures of up to 10 GPa and room temperature. This hydrous glass is separated into two phases: a major phase rich in SiO2 and a minor phase rich in D2O molecules distributed as small domains with dimensions of less than 100 Å. Medium-range order of the hydrous glass shrinks compared to the anhydrous SiO2 glass by disruption of SiO4 linkage due to the formation of Si–OD deuterioxyl, while the response of its structure to pressure is almost the same as that of the anhydrous SiO2 glass. Most of D2O molecules are in the small domains and hardly penetrate into the void space in the ring consisting of SiO4 tetrahedra.

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Photocurrent density and electrical properties of Bi0.5Na0.5TiO3-BaNi0.5Nb0.5O3 ceramics

Journal of Advanced Ceramics ◽

10.1007/s40145-021-0497-7 ◽

2021 ◽

Author(s):

Mingqiang Zhong ◽

Qin Feng ◽

Changlai Yuan ◽

Xiao Liu ◽

Baohua Zhu ◽

...

Keyword(s):

Electrical Properties ◽

Photovoltaic Effect ◽

Short Circuit ◽

Short Circuit Current ◽

Photocurrent Density ◽

Open Circuit ◽

Light Conditions ◽

X Ray Diffraction ◽

Solid State Method ◽

X Ray

AbstractIn this work, the (1−x)Bi0.5Na0.5TiO3-xBaNi0.5Nb0.5O3 (BNT-BNN; 0.00 ⩽ x ⩽ 0.20) ceramics were prepared via a high-temperature solid-state method. The crystalline structures, photovoltaic effect, and electrical properties of the ceramics were investigated. According to X-ray diffraction, the system shows a single perovskite structure. The samples show the normal ferroelectric loops. With the increase of BNN content, the remnant polarization (Pr) and coercive field (Ec) decrease gradually. The optical band gap of the samples narrows from 3.10 to 2.27 eV. The conductive species of grains and grain boundaries in the ceramics are ascribed to the double ionized oxygen vacancies. The open-circuit voltage (Voc) of ∼15.7 V and short-circuit current (Jsc) of ∼1450 nA/cm2 are obtained in the 0.95BNT-0.05BNN ceramic under 1 sun illumination (AM1.5G, 100 mW/cm2). A larger Voc of 23 V and a higher Jsc of 5500 nA/cm2 are achieved at the poling field of 60 kV/cm under the same light conditions. The study shows this system has great application prospects in the photovoltaic field.

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Properties of Sputter Deposited ZnO Films Co-doped with Lithium and Phosphorus

MRS Proceedings ◽

10.1557/opl.2013.4 ◽

2013 ◽

Vol 1494 ◽

pp. 77-82

Author(s):

T. N. Oder ◽

A. Smith ◽

M. Freeman ◽

M. McMaster ◽

B. Cai ◽

...

Keyword(s):

Rf Magnetron Sputtering ◽

Zno Films ◽

X Ray Diffraction ◽

X Ray ◽

Sapphire Substrates ◽

Hall Effect Measurements ◽

Sputter Deposited ◽

P Type ◽

Post Deposition ◽

Co Doped

ABSTRACTThin films of ZnO co-doped with lithium and phosphorus were deposited on sapphire substrates by RF magnetron sputtering. The films were sequentially deposited from ultra pure ZnO and Li3PO4 solid targets. Post deposition annealing was carried using a rapid thermal processor in O2 and N2 at temperatures ranging from 500 °C to 1000 °C for 3 min. Analyses performed using low temperature photoluminescence spectroscopy measurements reveal luminescence peaks at 3.359, 3.306, 3.245 eV for the co-doped samples. The x-ray diffraction 2θ-scans for all the films showed a single peak at about 34.4° with full width at half maximum of about 0.17°. Hall Effect measurements revealed conductivities that change from p-type to n-type over time.

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Study on Phases and Thermoelectric Properties of Bulk Fe4Sb12 and Fe3CoSb12 Prepared by Milling and Sintering

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.121-126.1526 ◽

2011 ◽

Vol 121-126 ◽

pp. 1526-1529

Author(s):

Ke Gao Liu ◽

Jing Li

Keyword(s):

Thermoelectric Properties ◽

Impurity Phase ◽

Semiconductor Materials ◽

Thermal Constant ◽

X Ray Diffraction ◽

X Ray ◽

Seebeck Coefficients ◽

Maximum Value ◽

Type Semiconductor ◽

P Type

Bulk Fe4Sb12 and Fe3CoSb12 were prepared by sintering at 600 °C. The phases of samples were analyzed by X-ray diffraction and their thermoelectric properties were tested by electric constant instrument and laser thermal constant instrument. Experimental results show that, the major phases of bulk samples are skutterudite with impurity phase FeSb2. The electric resistivities of the samples increase with temperature rising at 100~500 °C. The bulk samples are P-type semiconductor materials. The Seebeck coefficients of the bulk Fe4Sb12 are higher than those of bulk Fe3CoSb12 samples at 100~200 °C but lower at 300~500 °C. The power factor of the bulk Fe4Sb12 samples decreases with temperature rising while that of bulk Fe3CoSb12 samples increases with temperature rising at 100~500 °C. The thermal conductivities of the bulk Fe4Sb12 samples are relatively higher than those of and Fe3CoSb12, which maximum value is up to 0.0974 Wm-1K-1. The ZT value of bulk Fe3CoSb12 increases with temperature rising at 100~500 °C, the maximum value is up to 0.031.The ZT values of the bulk Fe4Sb12 samples are higher than those of bulk Fe3CoSb12 at 100~300 °C while lower at 400~500 °C.

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