Continuous‐wave lasing at 100°C in 1.3 µm quantum dot microdisk diode laser

2015 ◽  
Vol 51 (17) ◽  
pp. 1354-1355 ◽  
Author(s):  
N.V. Kryzhanovskaya ◽  
E.I. Moiseev ◽  
Yu. V. Kudashova ◽  
F.I. Zubov ◽  
A.A. Lipovskii ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Diode Laser ◽  
Continuous Wave

Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate

1999 ◽  
Vol 11 (11) ◽  
pp. 1345-1347 ◽  
Author(s):  
A.E. Zhukov ◽  
A.R. Kovsh ◽  
V.M. Ustinov ◽  
Yu.M. Shernyakov ◽  
S.S. Mikhrin ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Diode Laser ◽  
Gaas Substrate ◽  
Continuous Wave ◽  
Long Wavelength ◽  
Continuous Wave Operation

scholarly journals Medical Applications of Diode Lasers: Pulsed versus Continuous Wave (cw) Regime

Micromachines ◽  
2021 ◽  
Vol 12 (6) ◽  
pp. 710
Author(s):  
Michał Michalik ◽  
Jacek Szymańczyk ◽  
Michał Stajnke ◽  
Tomasz Ochrymiuk ◽  
Adam Cenian
Keyword(s):  
Diode Laser ◽  
Continuous Wave ◽  
Diode Lasers ◽  
Short Review ◽  
Medical Application ◽  
Medical Applications ◽  
Therapeutic Effects ◽  
Pulsed Mode ◽  
Medical Therapies

The paper deals with the medical application of diode-lasers. A short review of medical therapies is presented, taking into account the wavelength applied, continuous wave (cw) or pulsed regimes, and their therapeutic effects. Special attention was paid to the laryngological application of a pulsed diode laser with wavelength 810 nm, and dermatologic applications of a 975 nm laser working at cw and pulsed mode. The efficacy of the laser procedures and a comparison of the pulsed and cw regimes is presented and discussed.

Mechanism of microlens formation in quantum dot glasses under continuous-wave laser irradiation

2001 ◽  
Vol 89 (12) ◽  
pp. 8273-8278 ◽  
Author(s):  
Yuri Kaganovskii ◽  
Irena Antonov ◽  
Fredrick Bass ◽  
Michael Rosenbluh ◽  
Audrey Lipovskii
Keyword(s):  
Quantum Dot ◽  
Laser Irradiation ◽  
Continuous Wave ◽  
Continuous Wave Laser ◽  
Wave Laser

Degradation-robust single mode continuous wave operation of 1.46μm metamorphic quantum dot lasers on GaAs substrate

2006 ◽  
Vol 89 (4) ◽  
pp. 041113 ◽  
Author(s):  
T. Kettler ◽  
L. Ya. Karachinsky ◽  
N. N. Ledentsov ◽  
V. A. Shchukin ◽  
G. Fiol ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Gaas Substrate ◽  
Continuous Wave ◽  
Single Mode ◽  
Quantum Dot Lasers ◽  
Continuous Wave Operation

Subpicosecond accumulated photon echoes using a continuous-wave multimode diode laser

1989 ◽  
Vol 14 (12) ◽  
pp. 633 ◽  
Author(s):  
Hiroki Nakatsuka ◽  
Ryuzi Yano ◽  
Yoshinori Matsumoto ◽  
Kazuki Inouye
Keyword(s):  
Diode Laser ◽  
Continuous Wave ◽  
Photon Echoes

scholarly journals InAs/GaAs Quantum Dot Microlasers Formed on Silicon Using Monolithic and Hybrid Integration Methods

Materials ◽  
2020 ◽  
Vol 13 (10) ◽  
pp. 2315
Author(s):  
Alexey E. Zhukov ◽  
Natalia V. Kryzhanovskaya ◽  
Eduard I. Moiseev ◽  
Anna S. Dragunova ◽  
Mingchu Tang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Current Density ◽  
Elevated Temperatures ◽  
Continuous Wave ◽  
Electrical Contact ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Constant Current ◽  
Surface Protection ◽  
Microdisk Lasers

An InAs/InGaAs quantum dot laser with a heterostructure epitaxially grown on a silicon substrate was used to fabricate injection microdisk lasers of different diameters (15–31 µm). A post-growth process includes photolithography and deep dry etching. No surface protection/passivation is applied. The microlasers are capable of operating heatsink-free in a continuous-wave regime at room and elevated temperatures. A record-low threshold current density of 0.36 kA/cm2 was achieved in 31 µm diameter microdisks operating uncooled. In microlasers with a diameter of 15 µm, the minimum threshold current density was found to be 0.68 kA/cm2. Thermal resistance of microdisk lasers monolithically grown on silicon agrees well with that of microdisks on GaAs substrates. The ageing test performed for microdisk lasers on silicon during 1000 h at a constant current revealed that the output power dropped by only ~9%. A preliminary estimate of the lifetime for quantum-dot (QD) microlasers on silicon (defined by a double drop of the power) is 83,000 h. Quantum dot microdisk lasers made of a heterostructure grown on GaAs were transferred onto a silicon wafer using indium bonding. Microlasers have a joint electrical contact over a residual n+ GaAs substrate, whereas their individual addressing is achieved by placing them down on a p-contact to separate contact pads. These microdisks hybridly integrated to silicon laser at room temperature in a continuous-wave mode. No effect of non-native substrate on device characteristics was found.

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