Near-IR transparent conductive amorphous tungsten oxide thin layers by non-reactive radio-frequency magnetron sputtering
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Near Ir
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Key assets for transparent electric contacts in optoelectronic applications are high conductivity and large transparency over extended spectral range. Indium-Tin-Oxide and Aluminium-doped-Zinc-oxide are commercial examples, with their electrical conductivity resembling those of metals, despite, their transparency being limited up to 1.5µm. This work introduces smooth and compact amorphous thin films of n-type semiconducting WO3-x prepared by RF-sputtering followed by annealing in dry air, as optical layers of tailorable dielectric properties. We evaluate Figure of Merit, combining electrical conductivity and optical transparency, and rate the performances as a transparent conductive layer.
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2013 ◽
Vol 135
(18)
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pp. 7033-7038
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2018 ◽
Vol 18
(7)
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pp. 4022-4028
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2020 ◽
Vol 31
(4)
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pp. 2729-2740
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2019 ◽
Vol 48
(11)
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pp. 7192-7202
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