Characterization of metallophthalocyanine‐metal contacts: Electrical properties in a large frequency range

1984 ◽  
Vol 56 (8) ◽  
pp. 2323-2329 ◽  
Author(s):  
Bouzid Boudjema ◽  
Gérard Guillaud ◽  
Maxime Gamoudi ◽  
Monique Maitrot ◽  
Jean‐Jacques André ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Metal Contacts ◽  
Frequency Range ◽  
Large Frequency

scholarly journals Experimental Study of Electrical Properties of Pharmaceutical Materials by Electrical Impedance Spectroscopy

2020 ◽  
Vol 10 (18) ◽  
pp. 6576
Author(s):  
Manuel Vázquez-Nambo ◽  
José-Antonio Gutiérrez-Gnecchi ◽  
Enrique Reyes-Archundia ◽  
Wuqiang Yang ◽  
Marco-A. Rodriguez-Frias ◽  
...  
Keyword(s):  
System Identification ◽  
Electrical Properties ◽  
Impedance Spectroscopy ◽  
Electrical Impedance ◽  
Wide Frequency Range ◽  
Electrical Impedance Spectroscopy ◽  
Frequency Range ◽  
Pharmaceutical Materials ◽  
Identification Techniques

The physicochemical characterization of pharmaceutical materials is essential for drug discovery, development and evaluation, and for understanding and predicting their interaction with physiological systems. Amongst many measurement techniques for spectroscopic characterization of pharmaceutical materials, Electrical Impedance Spectroscopy (EIS) is powerful as it can be used to model the electrical properties of pure substances and compounds in correlation with specific chemical composition. In particular, the accurate measurement of specific properties of drugs is important for evaluating physiological interaction. The electrochemical modelling of compounds is usually carried out using spectral impedance data over a wide frequency range, to fit a predetermined model of an equivalent electrochemical cell. This paper presents experimental results by EIS analysis of four drug formulations (trimethoprim/sulfamethoxazole C14H18N4O3-C10H11N3O3, ambroxol C13H18Br2N2O.HCl, metamizole sodium C13H16N3NaO4S, and ranitidine C13H22N4O3S.HCl). A wide frequency range from 20 Hz to 30 MHz is used to evaluate system identification techniques using EIS data and to obtain process models. The results suggest that arrays of linear R-C models derived using system identification techniques in the frequency domain can be used to identify different compounds.

Electrical Properties of Y2NiMnO6 Ceramics Sintered at High Temperature

2015 ◽  
Vol 804 ◽  
pp. 55-58 ◽  
Author(s):  
Thanapong Sareein ◽  
Panakamon Deeyai ◽  
Bundit Putasaeng ◽  
Naphat Chathirat
Keyword(s):  
Thermal Decomposition ◽  
High Temperature ◽  
Electrical Properties ◽  
Double Perovskites ◽  
Decomposition Technique ◽  
Frequency Range ◽  
Spectroscopy Technique ◽  
Sintering Time ◽  
Impedance Spectroscopy Technique

In this work, impedance spectroscopy technique was used in order to investigate the electric properties of double perovskites of the Y2NiMnO6 ceramics, which were prepared by thermal decomposition technique at 800°C for 6 hours and then sintered at a high temperature of 1400°C for 6, 12, 18, and 24 hours. Consequently, the electric characterization of the Y2NiMnO6 ceramics was performed at 30°C °C in the frequency range from 102 Hz to 108 Hz. The results in the Rg with 10,000, 9,990, 6,400, and 1,700 (Ω) at sintering time, respectively. Dispersion was observed in the variation of impedance values with frequency. Possible reason for all the above observation was discussed.

The morphologies and electrical properties of indium contacts on (100) cadmium telluride surfaces

1992 ◽  
Vol 50 (2) ◽  
pp. 1422-1423
Author(s):  
A.M. Letsoalo ◽  
M.E. Lee ◽  
E.O. de Neijs
Keyword(s):  
Electrical Properties ◽  
Cadmium Telluride ◽  
Methanol Solution ◽  
Electrical Characteristics ◽  
Metal Contacts ◽  
Deposition Technique ◽  
Interfacial Layers ◽  
Semiconductor Contacts ◽  
Grown Single Crystal ◽  
Diamond Abrasive

Semiconductor devices require metal contacts for efficient collection of electrical charge. The physics of these metal/semiconductor contacts assumes perfect, abrupt and continuous interfaces between the layers. However, in practice these layers are neither continuous nor abrupt due to poor nucleation conditions and the formation of interfacial layers. The effects of layer thickness, deposition rate and substrate stoichiometry have been previously reported. In this work we will compare the effects of a single deposition technique and multiple depositions on the morphology of indium layers grown on (100) CdTe substrates. The electrical characteristics and specific resistivities of the indium contacts were measured, and their relationships with indium layer morphologies were established.Semi-insulating (100) CdTe samples were cut from Bridgman grown single crystal ingots. The surface of the as-cut slices were mechanically polished using 5μm, 3μm, 1μm and 0,25μm diamond abrasive respectively. This was followed by two minutes immersion in a 5% bromine-methanol solution.

Effect of the structure of cellulose acetate membranes on their permeability, electrical conductivity and rejection

1990 ◽  
Vol 55 (12) ◽  
pp. 2933-2939 ◽  
Author(s):  
Hans-Hartmut Schwarz ◽  
Vlastimil Kůdela ◽  
Klaus Richau
Keyword(s):  
Electrical Conductivity ◽  
Electrical Properties ◽  
Cellulose Acetate ◽  
Reverse Osmosis ◽  
Water Flux ◽  
Cellulose Acetate Membrane ◽  
Structure Parameters ◽  
Dc Electrical Conductivity ◽  
Cellulose Acetate Membranes

Ultrafiltration cellulose acetate membrane can be transformed by annealing into reverse osmosis membranes (RO type). Annealing brings about changes in structural properties of the membranes, accompanied by changes in their permeability behaviour and electrical properties. Correlations between structure parameters and electrochemical properties are shown for the temperature range 20-90 °C. Relations have been derived which explain the role played by the dc electrical conductivity in the characterization of rejection ability of the membranes in the reverse osmosis, i.e. rRO = (1 + exp (A-B))-1, where exp A and exp B are statistically significant correlation functions of electrical conductivity and salt permeation, or of electrical conductivity and water flux through the membrane, respectively.

scholarly journals A flexible platform for controlled optical and electrical effects in tailored plasmonic break junctions

Nanophotonics ◽  
2020 ◽  
Vol 9 (6) ◽  
pp. 1391-1400
Author(s):  
Florian Laible ◽  
Kai Braun ◽  
Otto Hauler ◽  
Martin Eberle ◽  
Dieter P. Kern ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Tunneling Current ◽  
Plasmonic Nanostructures ◽  
Break Junction ◽  
Metal Contacts ◽  
Break Junctions ◽  
Constant Bias ◽  
Confocal Scanning ◽  
Atomic Point Contacts

AbstractMechanically controllable break junctions are one suitable approach to generate atomic point contacts and ultrasmall and controllable gaps between two metal contacts. For constant bias voltages, the tunneling current can be used as a ruler to evaluate the distance between the contacts in the sub-1-nm regime and with sub-Å precision. This ruler can be used to measure the distance between two plasmonic nanostructures located at the designated breaking point of the break junction. In this work, an experimental setup together with suitable nanofabricated break junctions is developed that enables us to perform simultaneous gap-dependent optical and electrical characterization of coupled plasmonic particles, more specifically bowtie antennas in the highly interesting gap range from few nanometers down to zero gap width. The plasmonic break junction experiment is performed in the focus of a confocal microscope. Confocal scanning images and current measurements are simultaneously recorded and exhibit an increased current when the laser is focused in the proximity of the junction. This setup offers a flexible platform for further correlated optoelectronic investigations of coupled antennas or junctions bridged by nanomaterials.

Electrical characterization of aluminous cement at the early age in the 10 Hz–1 GHz frequency range

2000 ◽  
Vol 30 (7) ◽  
pp. 1057-1062 ◽  
Author(s):  
Youssef El Hafiane ◽  
Agnès Smith ◽  
Jean Pierre Bonnet ◽  
Pierre Abelard ◽  
Philippe Blanchart
Keyword(s):  
Electrical Characterization ◽  
Early Age ◽  
Frequency Range ◽  
Aluminous Cement

Thermorheological Characterization of Elastoviscoplastic Carbopol Ultrez 20 Gel

2015 ◽  
Vol 137 (3) ◽  
Author(s):  
M. A. Hassan ◽  
Manabendra Pathak ◽  
Mohd. Kaleem Khan
Keyword(s):  
Experimental Investigation ◽  
Yield Stress ◽  
Elastic Properties ◽  
Viscous Dissipation ◽  
Power Law ◽  
Effect Of Temperature ◽  
Rheological Parameters ◽  
Frequency Range ◽  
Power Law Index

The temperature and concentration play an important role on rheological parameters of the gel. In this work, an experimental investigation of thermorheological properties of aqueous gel Carbopol Ultrez 20 for various concentrations and temperatures has been presented. Both controlled stress ramps and controlled stress oscillatory sweeps were performed for obtaining the rheological data to find out the effect of temperature and concentration. The hysteresis or thixotropic seemed to have negligible effect. Yield stress, consistency factor, and power law index were found to vary with temperature as well as concentration. With gel concentration, the elastic effect was found to increase whereas viscous dissipation effect was found to decrease. Further, the change in elastic properties was insignificant with temperature in higher frequency range of oscillatory stress sweeps.

Electrical Characterization of the Graphene-SiC Heterojunction

2012 ◽  
Vol 717-720 ◽  
pp. 641-644
Author(s):  
Travis J. Anderson ◽  
Karl D. Hobart ◽  
Luke O. Nyakiti ◽  
Virginia D. Wheeler ◽  
Rachael L. Myers-Ward ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Charge Carrier ◽  
Graphene Sheet ◽  
Carrier Transport ◽  
Electrical Characterization ◽  
Epitaxial Graphene ◽  
Charge Carrier Transport ◽  
Semiconductor System ◽  
Significant Research

Graphene, a 2D material, has motivated significant research in the study of its in-plane charge carrier transport in order to understand and exploit its unique physical and electrical properties. The vertical graphene-semiconductor system, however, also presents opportunities for unique devices, yet there have been few attempts to understand the properties of carrier transport through the graphene sheet into an underlying substrate. In this work, we investigate the epitaxial graphene/4H-SiC system, studying both p and n-type SiC substrates with varying doping levels in order to better understand this vertical heterojunction.

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