Stoichiometry dependence of electrical activation efficiency in Si implanted layers of undoped, semi‐insulating GaAs

1986 ◽  
Vol 49 (23) ◽  
pp. 1599-1601 ◽  
Author(s):  
Takashi Sato ◽  
Masato Nakajima ◽  
Tsuguo Fukuda ◽  
Koichi Ishida
2004 ◽  
Vol 96 (11) ◽  
pp. 6277-6280 ◽  
Author(s):  
Mee-Yi Ryu ◽  
Y. K. Yeo ◽  
M. A. Marciniak ◽  
R. L. Hengehold ◽  
T. D. Steiner

Author(s):  
Yu. V. Dmitrak ◽  
V. I. Golik ◽  
V. P. Franchuk ◽  
V. I. Lyashenko

The main operation associated with the preparation of mining and metallurgical wastes for use as a hardening mixture and backfilling of mined-out space is their crushing and activation. Improving the activation processes is an urgent task, since their use can significantly increase the strength of the filling mass or reduce the consumption of the binder while maintaining its strength characteristics. For the efficient operation of mining enterprises, including ferrous metallurgy mines, it is necessary to provide highquality binders for the preparation of hardening mixtures for filling man-made voids formed during underground mining of solid mineral deposits. It has been established that the use of vibration, mechanical and electrical activation of the components of the hardening backfill mixture at mining enterprises leads to an increase in the activity of substandard materials by up to 10–40% for each apparatus. In particular, the enrichment of inert materials on a vibrating screen ГВ-1,2/3,2, Ukraine, increases the activity by 15– 20%. It has been substantiated that the activation of binders (blast-furnace granular slags) in a vertical vibrating mill МВВ-0,7, Ukraine, and a disintegrator ДУ-65 company “Disintegrator”, Estonia, increases the activity of the binder by 20–25%, when the active class of fractions 0.074 mm – by 55% is released versus 40% in ball mills. The recommended vibratory conveying installations increase the activity of the components of the hardening backfill mixture by 10–15%. The use of vibro-gravity transport installations ensures the supply of the filling mixture at a distance 15–20 times higher than the height of the vertical stack.


1993 ◽  
Vol 300 ◽  
Author(s):  
S.W. Choi ◽  
J.W. Yang ◽  
B.H. Koak ◽  
K.I. Cho ◽  
H.M. Park

ABSTRACTRapid thermal annealing (RTA) has been employed for the electrical activation of shallow n-channel layer by Si+ implantation in the fabrication of GaAs MESFET. To prevent considerable outdiffusion of gallium and arsenic from GaAs substrate during annealing, encapsulating layers such as SiNx and SiNx/SiO2 are deposited. The SiNx/SiO2 double dielectric encapsulant is shown to be more effective to improve the electrical activation. Depending on RTA temperature between 900 and 950°C, the maximum activation efficiency exhibits 77% at the implanted energy of 70 keV and the dose of 5×1012 cm−2. SIMS analyses show the reduction of the hydrogen contained in the silicon nitride and no outdiffusion of Ga and As during RTA. It also shows the sharp Si-profile after RTA at 950°C, 30 sec. The MESFET fabricated using activaton with RTA provides better transconductance than that with furnace-annealed activation.


1993 ◽  
Vol 303 ◽  
Author(s):  
S.W. Choi ◽  
J.W. Yang ◽  
B.H. Koak ◽  
K.I. Cho ◽  
H.M. Park

ABSTRACTRapid thermal annealing (RTA) has been employed for the electrical activation of shallow n-channel layer by Si+ implantation in the fabrication of GaAs MESFET. To prevent considerable outdiffusion of gallium and arsenic from GaAs substrate during annealing, encapsulating layers such as SiNx and SiNx/SiO2 are deposited. The SiNx/SiO2 double dielectric encapsulant is shown to be more effective to improve the electrical activation. Depending on RTA temperature between 900 and 950°C, the maximum activation efficiency exhibits 77% at the implanted energy of 70 keV and the dose of 5x1012 cm−2. SIMS analyses show the reduction of the hydrogen contained in the silicon nitride and no outdiffusion of Ga and As during RTA. It also shows the sharp Si-profile after RTA at 950°C, 30 sec. The MESFET fabricated using activation with RTA provides better transconductance than that with furnace-annealed activation.


1983 ◽  
Vol 23 ◽  
Author(s):  
A. Ezis ◽  
Y. K. Yeo ◽  
Y. S. Park

ABSTRACTThe electrical properties of IR radiation transient annealed Si implanted semi-insulating GaAs are presented for 100 keV ion doses from 3 × 1012 to 3 × 1014 cm−2. For wafers implanted with 3 × 1012 cm−2 doses, suitable for FET channel layers, carrier concentration and drift mobility profiles were determined from C-V and transconductance measurements on fat FET structures. Optimum electrical activation and carrier concentration profiles were obtained for peak pulse temperatures of 930–950°C. Van der Pauw measurements were made on substrates implanted with Si doses ≥ 1 × 1013 cm−2 to determine sheet carrier concentration and Hall mobility. The peak pulse temperature required to give optimum activation efficiency is found to increase with dose. The results presented here demonstrate that undoped substrates are preferable to Cr-doped substrates for low dose device applications.


2001 ◽  
Vol 693 ◽  
Author(s):  
James A. Fellows ◽  
Yung Kee Yeo ◽  
Robert L. Hengehold ◽  
Leonid Krasnobaev

AbstractThe electrical and optical properties of Si-implanted GaN have been investigated as a function of ion dose, anneal temperature, and implantation temperature using Hall-effect measurements and photoluminescence. Implantation of 200 keV Si ions was made at room temperature and 800°C into MBE-grown GaN capped with 500 Å AlN at six different doses ranging from 1x1013 to 5x1015 cm-2. The samples were proximity cap annealed from 1050 to 1350°C for 5 min to 20 s using either a conventional furnace or rapid thermal annealing. For a given dose, electrical activation efficiencies and mobilities increase as the anneal temperature increases from 1050 to 1350°C. Generally, the higher the dose, the greater the activation efficiency for any given anneal temperature. For a sample implanted with a dose of 1x1015 cm-2 and annealed at 1350°C for 20 s, an electrical activation efficiency of 100% was obtained. Exceptional carrier concentrations and mobilities were obtained on all Si-implanted samples, and a comparison of the results was made between room temperature and 800°C implantation. Photoluminescence measurements were also performed in an effort to better understand the electrical activation behavior of the Si implants in GaN.


2019 ◽  
Vol 11 (483) ◽  
pp. eaau1428 ◽  
Author(s):  
Wenjie Wu ◽  
Hui Wang ◽  
Peinan Zhao ◽  
Michael Talcott ◽  
Shengsheng Lai ◽  
...  

In current clinical practice, uterine contractions are monitored via a tocodynamometer or an intrauterine pressure catheter, both of which provide crude information about contractions. Although electrohysterography/electromyography can measure uterine electrical activity, this method lacks spatial specificity and thus cannot accurately measure the exact location of electrical initiation and location-specific propagation patterns of uterine contractions. To comprehensively evaluate three-dimensional uterine electrical activation patterns, we describe here the development of electromyometrial imaging (EMMI) to display the three-dimensional uterine contractions at high spatial and temporal resolution. EMMI combines detailed body surface electrical recording with body-uterus geometry derived from magnetic resonance images. We used a sheep model to show that EMMI can reconstruct uterine electrical activation patterns from electrodes placed on the abdomen. These patterns closely match those measured with electrodes placed directly on the uterine surface. In addition, modeling experiments showed that EMMI reconstructions are minimally affected by noise and geometrical deformation. Last, we show that EMMI can be used to noninvasively measure uterine contractions in sheep in the same setup as would be used in humans. Our results indicate that EMMI can noninvasively, safely, accurately, robustly, and feasibly image three-dimensional uterine electrical activation during contractions in sheep and suggest that similar results might be obtained in clinical setting.


2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Pavel Jurak ◽  
Laura R. Bear ◽  
Uyên Châu Nguyên ◽  
Ivo Viscor ◽  
Petr Andrla ◽  
...  

AbstractThe study introduces and validates a novel high-frequency (100–400 Hz bandwidth, 2 kHz sampling frequency) electrocardiographic imaging (HFECGI) technique that measures intramural ventricular electrical activation. Ex-vivo experiments and clinical measurements were employed. Ex-vivo, two pig hearts were suspended in a human-torso shaped tank using surface tank electrodes, epicardial electrode sock, and plunge electrodes. We compared conventional epicardial electrocardiographic imaging (ECGI) with intramural activation by HFECGI and verified with sock and plunge electrodes. Clinical importance of HFECGI measurements was performed on 14 patients with variable conduction abnormalities. From 3 × 4 needle and 108 sock electrodes, 256 torso or 184 body surface electrodes records, transmural activation times, sock epicardial activation times, ECGI-derived activation times, and high-frequency activation times were computed. The ex-vivo transmural measurements showed that HFECGI measures intramural electrical activation, and ECGI-HFECGI activation times differences indicate endo-to-epi or epi-to-endo conduction direction. HFECGI-derived volumetric dyssynchrony was significantly lower than epicardial ECGI dyssynchrony. HFECGI dyssynchrony was able to distinguish between intraventricular conduction disturbance and bundle branch block patients.


2007 ◽  
Vol 40 (17) ◽  
pp. 5227-5231 ◽  
Author(s):  
R M de Oliveira ◽  
M Dalponte ◽  
H Boudinov

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