Integration of high permittivity BaTiO3 with AlGaN/GaN for near-theoretical breakdown field kV-class transistors

2021 ◽  
Vol 119 (19) ◽  
pp. 193501
Author(s):  
Mohammad Wahidur Rahman ◽  
Nidhin Kurian Kalarickal ◽  
Hyunsoo Lee ◽  
Towhidur Razzak ◽  
Siddharth Rajan
2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000333-000335
Author(s):  
U. Balachandran ◽  
M. Narayanan ◽  
B. Ma

Future availability of high-temperature power inverters will advance the market share for hybrid vehicles that are highly fuel efficient and environmentally friendly. Capacitors have a significant influence on inverter lifetime, reliability, cost, and temperature of operation. Advanced power inverters require capacitors that operate under high voltage conditions at under-hood conditions and yet have minimal footprint. This need can be realized by embedding high-permittivity dielectrics within a printed wire board (PWB). The “film-on-foil” approach, where the dielectric is deposited on base-metal foil, is a promising method for embedding the capacitors within a PWB. We have deposited high-permittivity films of lead lanthanum zirconium titanate (PLZT) on nickel foils by a chemical solution deposition technique. These prefabricated film-on-foil dielectric sheets can be embedded into PWBs for inverter applications. Among the many challenges in fabricating these sheets is avoiding a reduction in capacitance density from the formation of a parasitic, low-permittivity, interfacial layer of nickel oxide during thermal processing of the PLZT. We inserted a conductive oxide buffer layer between the PLZT dielectric film and the nickel foil to hinder formation of the deleterious interfacial oxide. For PLZT films deposited on Ni foils, we measured a dielectric constant of 1300 (at 25°C) and 1800 (at 150°C), leakage current density of 6.6 × 10−9 A/cm2 (at 25°C) and 1.4 × 10−8 A/cm2 (at 150°C), and breakdown field strength >2.0 MV/cm (at 25°C). Film-on-foil dielectric films were thermally cycled (≈1000 cycles) between −50°C and +150°C with no measurable degradation in dielectric constant. Recently, we fabricated and measured a capacitance of ≈1 μF on a 12-mm-diameter film-on-foil dielectric layer. The fabrication procedures and dielectric properties of film-on-foil PLZT samples are presented in this talk.


Polymers ◽  
2021 ◽  
Vol 13 (23) ◽  
pp. 4202
Author(s):  
Yingjie Jiang ◽  
Yujia Li ◽  
Haibo Yang ◽  
Nanying Ning ◽  
Ming Tian ◽  
...  

The dielectric elastomer (DE) generator (DEG), which can convert mechanical energy to electrical energy, has attracted considerable attention in the last decade. Currently, the energy-harvesting performances of the DEG still require improvement. One major reason is that the mechanical and electrical properties of DE materials are not well coordinated. To provide guidance for producing high-performance DE materials for the DEG, the relationship between the intrinsic properties of DE materials and the energy-harvesting performances of the DEG must be revealed. In this study, a simplified but validated electromechanical model based on an actual circuit is developed to study the relationship between the intrinsic properties of DE materials and the energy-harvesting performance. Experimental verification of the model is performed, and the results indicate the validity of the proposed model, which can well predict the energy-harvesting performances. The influences of six intrinsic properties of DE materials on energy-harvesting performances is systematically studied. The results indicate that a high breakdown field strength, low conductivity and high elasticity of DE materials are the prerequisites for obtaining high energy density and conversion efficiency. DE materials with high elongation at break, high permittivity and moderate modulus can further improve the energy density and conversion efficiency of the DEG. The ratio of permittivity and the modulus of the DE should be tailored to be moderate to optimize conversion efficiency (η) of the DEG because using DE with high permittivity but extremely low modulus may lead to a reduction in η due to the occurrence of premature “loss of tension”.


2003 ◽  
Vol 766 ◽  
Author(s):  
Ahila Krishnamoorthy ◽  
N.Y. Huang ◽  
Shu-Yunn Chong

AbstractBlack DiamondTM. (BD) is one of the primary candidates for use in copper-low k integration. Although BD is SiO2 based, it is vastly different from oxide in terms of dielectric strength and reliability. One of the main reliability concerns is the drift of copper ions under electric field to the surrounding dielectric layer and this is evaluated by voltage ramp (V-ramp) and time dependent dielectric breakdown (TDDB). Metal 1 and Metal 2 intralevel comb structures with different metal widths and spaces were chosen for dielectric breakdown studies. Breakdown field of individual test structures were obtained from V-ramp tests in the temperature range of 30 to 150°C. TDDB was performed in the field range 0.5 – 2 MV/cm. From the leakage between combs at the same level (either metal 1 or metal 2) Cu drift through SiC/BD or SiN/BD interface was characterized. It was found that Cu/barrier and barrier/low k interfaces functioned as easy paths for copper drift thereby shorting the lines. Cu/SiC was found to provide a better interface than Cu/SiN.


2000 ◽  
Vol 54 (1) ◽  
pp. 73-84
Author(s):  
Yurii Mikhailovich Poplavko ◽  
Vyacheslav Vyacheslavovich Meriakri

Electronics ◽  
2021 ◽  
Vol 10 (13) ◽  
pp. 1600
Author(s):  
Matthew Gaddy ◽  
Vladimir Kuryatkov ◽  
Nicholas Wilson ◽  
Andreas Neuber ◽  
Richard Ness ◽  
...  

The suitability of GaN PCSSs (photoconductive semiconductor switches) as high voltage switches (>50 kV) was studied using a variety of commercially available semi-insulating GaN wafers as the base material. Analysis revealed that the wafers’ physical properties were noticeably diverse, mainly depending on the producer. High Voltage PCSSs were fabricated in both vertical and lateral geometry with various contacts, ohmic (Ti/Al/Ni/Au or Ni/Au), with and without a conductive n-GaN or p-type layer grown by metal-organic chemical vapor deposition. Inductively coupled plasma (ICP) reactive ion etching (RIE) was used to form a mesa structure to reduce field enhancements allowing for a higher field to be applied before electrical breakdown. The length of the active region was also varied from a 3 mm gap spacing to a 600 µm gap spacing. The shorter gap spacing supports higher electric fields since the number of macro defects within the device’s active region is reduced. Such defects are common in hydride vapor phase epitaxy grown samples and are likely one of the chief causes for electrical breakdown at field levels below the bulk breakdown field of GaN. Finally, the switching behavior of PCSS devices was tested using a pulsed, high voltage testbed and triggered by an Nd:YAG laser. The best GaN PCSS fabricated using a 600 µm gap spacing, and a mesa structure demonstrated a breakdown field strength as high as ~260 kV/cm.


2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Carlo Forestiere ◽  
Giovanni Miano ◽  
Bruno Miranda

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