scholarly journals Investigation of Morphology of Aluminum Co-Doped Scandium Stabilized Zirconia (ScAlSZ) Thin Films

Coatings ◽  
2021 ◽  
Vol 12 (1) ◽  
pp. 31
Author(s):  
Arvaidas Galdikas ◽  
Mantas Sriubas ◽  
Gediminas Kairaitis ◽  
Darius Virbukas ◽  
Kristina Bockute ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Surface Roughness ◽  
Substrate Temperature ◽  
Deposition Rate ◽  
Deposition Temperature ◽  
Film Surface ◽  
Lateral Size ◽  
Stabilized Zirconia ◽  
Co Doped

The morphology of aluminum co-doped scandium stabilized zirconia (ScAlSZ) thin films formed by e-beam deposition system was investigated experimentally and theoretically. The dependencies of surface roughness, and the films’ structure on deposition temperature and deposition rate were analyzed. It was shown experimentally that the dependence of the surface roughness on deposition temperature and deposition rate was not monotonic. Those dependencies were analyzed by mathematical modeling. The mathematical model includes the processes of phase separation, adsorption and diffusion process due to the film surface curvature. The impacts of substrate temperature, growth rate on surface roughness of thin films and lateral nanoparticle sizes are shown by the modeling results. Modeling showed that the roughness of the surface of grown films became higher in most cases as the substrate’s temperature rose, but the higher deposition rate resulted in lower surface roughness in most cases. The results obtained by simulations were compared to the relevant experimental data. The non-linear relationships between surface roughness of grown films and lateral size of nanoparticles were also shown by our modeling results, which suggested that the variation in the surface roughness depending on the substrate temperature and growth rate was related to the lateral size of nanoparticles.

Surface Roughness in Alumina Thin Film Deposited on Silica Using Oblique Incidence

2014 ◽  
Vol 787 ◽  
pp. 373-377 ◽  
Author(s):  
Li Jun He ◽  
Chuan Li ◽  
Xing Zhao Liu
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Film Thickness ◽  
Substrate Temperature ◽  
Deposition Rate ◽  
Film Surface ◽  
Electron Beam Evaporation ◽  
Oblique Angle Deposition ◽  
Inclined Angle ◽  
Physical And Chemical

The main characteristics of a surface are physical and chemical structure, surface tension and surface roughness. Surface roughness is one of the critical factors, which could cause instability in quality performance. In this paper, surface roughness of alumina thin films deposited on a silicon substrate by using electron beam evaporation with oblique angle deposition were studied. It has been found that the surface roughness of the alumina thin films was dependent on the substrate temperature, the deposition rate, the film thickness and the inclined angle. The experimental results showed that increasing the substrate temperature reduced the surface roughness at a low inclined angle and enhanced the surface roughness at a high inclined angle, and the surface roughness increased with increasing deposition rate and film thickness. By choosing the appropriate film preparation parameters, the film surface roughness was effectively controlled.

The Influence of Substrate Temperature on the Morphological and Optical Properties of ZnTiO3 Thin Films Prepared by Magnetron Sputtering

2013 ◽  
Vol 804 ◽  
pp. 3-7
Author(s):  
Chao Zhan ◽  
Wen Jian Ke ◽  
Xin Ming Li ◽  
Wan Li Du ◽  
Li Juan Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Refractive Index ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Dispersion Model ◽  
Film Surface ◽  
Cubic Phase ◽  
Different Temperatures

Cubic ZnTiO3thin films have been prepared by radio frequency magnetron sputtering on n-type (100) Si substrate at different temperatures. The morphological and optical properties of ZnTiO3films in relation to substrate temperatures are investigated by spectroscopic ellipsometry (SE) and AFM as well as SEM in detail. X-ray diffraction (XRD) measurement shows that all the films have a cubic phase structure and the optimum substrate temperature to form crystalline ZnTiO3thin film is 250 °C. Through SEM and AFM, the particle size in thin films and film surface roughness increase with increasing the substrate temperature. Based on a parameterized TaucLorentz dispersion model, the optical constants and surface roughness of ZnTiO3films related to the substrate temperature are systematically extracted by SE measurement. The surface roughness of the film measured from AFM agrees well with result extracted from SE, which proved that the established SE model is reasonable. With increasing substrate temperature, the refractive index decreases and the main factor in determining the refractive index was deduced to be the surface roughness related to the film packing density. The extinction coefficient of the samples is close to zero, but increases slightly with the increase of the substrate temperature, which is due to the enhancement of scattering effect in the crystalline ZnTiO3film.

scholarly journals Modeling the Layer-by-Layer Growth of HKUST-1 Metal-Organic Framework Thin Films

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1631
Author(s):  
Qiang Zhang ◽  
Yohanes Pramudya ◽  
Wolfgang Wenzel ◽  
Christof Wöll
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Deposition Rate ◽  
Layer Growth ◽  
Coarse Grained ◽  
Structural Defects ◽  
Effect Of Temperature ◽  
Layer By Layer ◽  
Reactant Concentration ◽  
Metal Organic

Metal organic frameworks have emerged as an important new class of materials with many applications, such as sensing, gas separation, drug delivery. In many cases, their performance is limited by structural defects, including vacancies and domain boundaries. In the case of MOF thin films, surface roughness can also have a pronounced influence on MOF-based device properties. Presently, there is little systematic knowledge about optimal growth conditions with regard to optimal morphologies for specific applications. In this work, we simulate the layer-by-layer (LbL) growth of the HKUST-1 MOF as a function of temperature and reactant concentration using a coarse-grained model that permits detailed insights into the growth mechanism. This model helps to understand the morphological features of HKUST-1 grown under different conditions and can be used to predict and optimize the temperature for the purpose of controlling the crystal quality and yield. It was found that reactant concentration affects the mass deposition rate, while its effect on the crystallinity of the generated HKUST-1 film is less pronounced. In addition, the effect of temperature on the surface roughness of the film can be divided into three regimes. Temperatures in the range from 10 to 129 °C allow better control of surface roughness and film thickness, while film growth in the range of 129 to 182 °C is characterized by a lower mass deposition rate per cycle and rougher surfaces. Finally, for T larger than 182 °C, the film grows slower, but in a smooth fashion. Furthermore, the potential effect of temperature on the crystallinity of LbL-grown HKUST-1 was quantified. To obtain high crystallinity, the operating temperature should preferably not exceed 57 °C, with an optimum around 28 °C, which agrees with experimental observations.

Supercritical Fluid Deposition of Ruthenium Thin Films: A Kinetic Study

2007 ◽  
Vol 992 ◽  
Author(s):  
Christos F. Karanikas ◽  
James J. Watkins
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Deposition Temperature ◽  
Zero Order ◽  
Measurable Effect ◽  
Deposition Rates ◽  
Reaction Pressure ◽  
Deposition Kinetics ◽  
First Order ◽  
Kinetics Of

AbstractThe kinetics of the deposition of ruthenium thin films from the hydrogen assisted reduction of bis(2,2,6,6-tetramethyl-3,5-heptanedionato)(1,5-cyclooctadiene)ruthenium(II), [Ru(tmhd)2cod], in supercritical carbon dioxide was studied in order to develop a rate expression for the growth rate as well as to determine a mechanism for the process. The deposition temperature was varied from 240°C to 280°C and the apparent activation energy was 45.3 kJ/mol. Deposition rates up to 30 nm/min were attained. The deposition rate dependence on precursor concentrations between 0 and 0.2 wt. % was studied at 260°C with excess hydrogen and revealed first order deposition kinetics with respect to precursor at concentrations lower then 0.06 wt. % and zero order dependence at concentrations above 0.06 wt. %. The effect of reaction pressure on the growth rate was studied at a constant reaction temperature of 260°C and pressures between 159 bar to 200 bar and found to have no measurable effect on the growth rate.

scholarly journals Residual Oxygen Effects on the Properties of MoS2 Thin Films Deposited at Different Temperatures by Magnetron Sputtering

Crystals ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1183
Author(s):  
Peiyu Wang ◽  
Xin Wang ◽  
Fengyin Tan ◽  
Ronghua Zhang
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Deposition Rate ◽  
Deposition Temperature ◽  
Energy Dispersive Spectrometer ◽  
Rf Magnetron Sputtering ◽  
Glass Substrates ◽  
Different Temperatures ◽  
Oxygen Atoms

Molybdenum disulfide (MoS2) thin films were deposited at different temperatures (150 °C, 225 °C, 300 °C, 375 °C, and 450 °C) on quartz glass substrates and silicon substrates using the RF magnetron sputtering method. The influence of deposition temperature on the structural, optical, electrical properties and deposition rate of the obtained thin films was investigated by X-ray diffraction (XRD), Energy Dispersive Spectrometer (EDS), Raman, absorption and transmission spectroscopies, a resistivity-measuring instrument with the four-probe method, and a step profiler. It was found that the MoS2 thin films deposited at the temperatures of 150 °C, 225 °C, and 300 °C were of polycrystalline with a (101) preferred orientation. With increasing deposition temperatures from 150 °C to 300 °C, the crystallization quality of the MoS2 thin films was improved, the Raman vibrational modes were strengthened, the deposition rate decreased, and the optical transmission and bandgap increased. When the deposition temperature increased to above 375 °C, the molecular atoms were partially combined with oxygen atoms to form MoO3 thin film, which caused significant changes in the structural, optical, and electrical properties of the obtained thin films. Therefore, it was necessary to control the deposition temperature and reduce the contamination of oxygen atoms throughout the magnetron sputtering process.

Effects of substrate temperature on dielectric and structural properties of Ti and Er co-doped HfO2 thin films

Vacuum ◽  
2012 ◽  
Vol 86 (12) ◽  
pp. 1920-1923 ◽  
Author(s):  
Murad Ali Khaskheli ◽  
Ping Wu ◽  
Xianfei Li ◽  
Hui Wang ◽  
Shiping Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Structural Properties ◽  
Co Doped

Novel Mocvd Processes for Nanoscale Oxide Thin Films

1996 ◽  
Vol 446 ◽  
Author(s):  
Tingkai Li ◽  
Pete Zawadzkp ◽  
Richard A. Stall ◽  
Yongfei Zhu ◽  
Seshu B. Desu
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Integrated Circuits ◽  
Deposition Temperature ◽  
High Dielectric Constant ◽  
Ferroelectric Properties ◽  
Oxide Thin Films ◽  
High Quality ◽  
Step Process ◽  
High Dielectric

AbstractNanoscale oxide thin films such as Ba1‐xSrxTiO3 (BST), SrBi2Ta2O9 (SBT), and PbZr1‐xTixO3 (PZT) that have a high dielectric constant and excellent ferroelectric properties have been receiving greatly increased attention, especially for high density memories in next generation integrated circuits. However, with increasing deposition temperature the surface roughness of the films increases, which results in high leakage current, and when the thickness of oxide films is decreased, the apparent bulk‐like properties of thin films tend to worsen due to the increased influence of the interface. To solve these problems, novel MOCVD techniques, plasma enhanced deposition, and a two step process, were developed for high quality oxide thin films.

scholarly journals Atmospheric Pressure Plasma Polymerized 2-Ethyl-2-oxazoline Based Thin Films for Biomedical Purposes

Polymers ◽  
2020 ◽  
Vol 12 (11) ◽  
pp. 2679
Author(s):  
Věra Mazánková ◽  
Pavel Sťahel ◽  
Petra Matoušková ◽  
Antonín Brablec ◽  
Jan Čech ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Atmospheric Pressure ◽  
Plasma Polymerization ◽  
Film Surface ◽  
Atmospheric Pressure Plasma ◽  
Bacterial Biofilm ◽  
Depth Sensing ◽  
Pressure Plasma ◽  
Highly Active

Polyoxazoline thin coatings were deposited on glass substrates using atmospheric pressure plasma polymerization from 2-ethyl-2-oxazoline vapours. The plasma polymerization was performed in dielectric barrier discharge burning in nitrogen at atmospheric pressure. The thin films stable in aqueous environments were obtained at the deposition with increased substrate temperature, which was changed from 20 ∘C to 150 ∘C. The thin film deposited samples were highly active against both S. aureus and E. coli strains in general. The chemical composition of polyoxazoline films was studied by FTIR and XPS, the mechanical properties of films were studied by depth sensing indentation technique and by scratch tests. The film surface properties were studied by AFM and by surface energy measurement. After tuning the deposition parameters (i.e., monomer flow rate and substrate temperature), stable films, which resist bacterial biofilm formation and have cell-repellent properties, were achieved. Such antibiofouling polyoxazoline thin films can have many potential biomedical applications.

Influence of Substrate Temperature on Deposition Rate and Optical Properties of Aluminum Oxide Thin Films Prepared by Reactive DC Sputtering Technique

2016 ◽  
Vol 675-676 ◽  
pp. 281-284
Author(s):  
Chatpawee Hom-On ◽  
Mati Horprathum ◽  
Pitak Eiamchai ◽  
Sakson Limwichean ◽  
Viyapol Patthanasetakul ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Optical Properties ◽  
Aluminum Oxide ◽  
Substrate Temperature ◽  
Deposition Rate ◽  
Oxide Films ◽  
Chemical Compositions ◽  
Transmittance Spectra ◽  
Vis Spectroscopy ◽  
Substrate Temperatures

Aluminum oxide films were grown on (100) silicon wafers and glass substrates by pulsed dc reactive magnetron sputtering deposition. In this experiment, substrate temperatures were varied from room temperature to 500°C. Grazing-incidence X-ray diffraction (GIXRD) analysis revealed that the resulting films have amorphous structures. Field-emission scanning electron microscope (FESEM) was used to characterize the morphology of the films. The films’ optical properties were determined by UV-Vis spectroscopy. The results demonstrated that the deposition rate, the surface roughness and the transmittance spectra of the aluminum oxide films were strongly influenced by the substrate temperature. The deposition rate and the surface roughness of the films were higher at higher substrate temperatures. In the range between 100°C and 200°C, the transmittance spectra were found to be lower than those of the films deposited at other substrate temperatures. This was due to the sub-aluminum oxide condition in the films. The dependence of films’ optical properties on the substrate temperature might result from the change in chemical compositions during the sputtering process.

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