scholarly journals Non-equilibrium methods for synthesis and modification of gallium oxide

2021 ◽  
Vol 2103 (1) ◽  
pp. 012062
Author(s):  
A A Nikolskaya ◽  
D S Korolev ◽  
A N Mikhaylov ◽  
T D Mullagaliev ◽  
Yu I Chigirinsky ◽  
...  
Keyword(s):  
Gallium Oxide ◽  
Ion Irradiation ◽  
Subsequent Annealing ◽  
Conducting Layer ◽  
Partial Recovery ◽  
Uv Detectors ◽  
Deposition Parameters ◽  
Ion Doping ◽  
Hall Effect Measurements ◽  
Deposited Films

Abstract Synthesis and modification of gallium oxide as a wide-bandgap semiconductor is a topical task in the fields of power electronics, UV detectors, gas sensors, telecommunication. In the present work, the Ga2O3 films deposited on sapphire substrates by magnetron sputtering have been studied. The influence of deposition parameters and subsequent annealing on the structure and optical properties of the synthesized films is analyzed. Ion doping of magnetron-deposited films with silicon is carried out by the ion implantation method. It is shown by the Raman scattering and optical transmission spectroscopy that ion irradiation leads to the disordering of the crystal structure, but subsequent annealing results in a partial recovery of the structure. Hall-effect measurements for irradiated and then annealed films do not reveal the formation of a conducting layer. Apparently, this is due to the fact that the main contribution to the resistance is made by grain boundaries in the magnetron-deposited films.

scholarly journals Investigation of spray pyrolyzed cubic structured Cu doped SnS films

2021 ◽  
Author(s):  
Emrah SARICA
Keyword(s):  
Spray Pyrolysis Technique ◽  
Hole Concentration ◽  
Compressive Strain ◽  
Cubic Phase ◽  
Cu Doping ◽  
Glass Substrates ◽  
High Electrical Resistivity ◽  
Hall Effect Measurements ◽  
P Type ◽  
Deposited Films

Abstract In this work undoped and Cu doped SnS film at 4% and 8% were deposited onto glass substrates by spray pyrolysis technique in order to investigate the effect of Cu doping on their physical properties. Surface investigations showed that Cu doping reduced the surface roughness of SnS films from 36.5 nm to 8.8 nm. XRD studies revealed that all films have recently solved large cubic phase of SnS (p-SnS) with a- lattice of 11.53 Å and Cu doping led to reduction in crystallite size from 229 Å to 198 Å. Additionally, all deposited films were found to be under compressive strain. Optical band gaps of SnS:Cu varied in the range of 1.83 eV-1.90 eV. Hall-effect measurements exhibited that all film have p-type conductivity with low hole concentration (~10 11 -10 12 cm -3 ) and high electrical resistivity (~10 4 -10 5 Ωcm).

Growth of Ge1-xCx Alloys on Si by Combined Low-Energy Ion Beam and Molecular Beam Epitaxy Method

1996 ◽  
Vol 438 ◽  
Author(s):  
H. Shibata ◽  
S. Kimura ◽  
P. Fons ◽  
A. Yamada ◽  
Y. Makita ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Low Energy ◽  
Irradiation Damage ◽  
Molecular Beam Epitaxy Method ◽  
Deposited Films ◽  
Very High

AbstractA combined ion beam and molecular beam epitaxy (CIBMBE) method was applied for the deposition of a Ge1-xCx alloy on Si(100) using a low-energy ( 50 – 100 eV ) C+ ion beam and a Ge molecular beam. Metastable Ge1-xCx solid solutions were formed up to x = 0.047, and the CIBMBE method was shown to have a very high potential to grow metastable Ge1-x,Cx alloys. It was also revealed that the sticking coefficient of C+ ions into Ge was ∼28% for Ei, = 100 eV and ∼18% for Ei = 50 eV. Structural characterization suggests that the deposited films are single crystals grown epitaxially on the substrate with twins on {111} planes. Characterization of lattice dynamics using Raman spectroscopy suggested that the deposited layers have a small amount of ion irradiation damage.

THE INFLUENCE OF ION IRRADIATION ON THE ABSOLUTE QUANTUM PHOTOYIELD OF DIAMOND FILMS STUDIED BY ELECTRON SPECTROSCOPY AND H+ PHOTODESORPTION

2000 ◽  
Vol 07 (04) ◽  
pp. 455-462 ◽  
Author(s):  
A. LAIKHTMAN ◽  
A. HOFFMAN
Keyword(s):  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Ion Irradiation ◽  
Hydrogen Plasma ◽  
Secondary Electron Emission ◽  
Diamond Films ◽  
Ion Bombardment ◽  
Partial Recovery ◽  
Near Surface ◽  
Absolute Quantum

In this study we report on absolute quantum photoyield (QPY) measurements from well-defined defective diamond surfaces in the 140–200 nm spectral range. The effect of defects in polycrystalline diamond films on their photoemission properties is studied by intentionally introducing damage using room temperature 30 keV Xe + ion bombardment to doses ranging from 2×1013 to 2×1015 ions/cm 2. Ion bombardment results in a drastic degradation of the QPY, to less than 1% at 140 nm, even at the lowest implantation dose compared to ~11.5% measured for the unimplanted diamond film. Analysis of the ion-damaged diamond films is performed by photon-stimulated ion desorption (PSID) measurements of H +, high resolution C(KLL) Auger electron spectroscopy and X-ray photoelectron spectroscopy. These measurements reveal that the decay in photoemission is due to the gradual formation of nondiamond carbon in the near-surface region. This damage leads to a change of the electron affinity from negative to positive, as determined by secondary electron emission measurements. PSID measurements reveal that the ion-bombarded diamond films remain hydrogen-terminated. MW hydrogen plasma treatment results in complete regeneration of the photoemission properties for diamond films implanted to Xe + doses of up to 2×1014 cm -2; only partial recovery was obtained for films irradiated with a higher ion dose.

Ion Beam Assisted Deposition of Metal Films

1988 ◽  
Vol 131 ◽  
Author(s):  
Kenji Gamo ◽  
Susumu Namba
Keyword(s):  
Substrate Temperature ◽  
Beam Energy ◽  
Ion Beam ◽  
Metal Films ◽  
Photon Beam ◽  
Ion Beam Assisted Deposition ◽  
Deposition Parameters ◽  
Enhanced Oxidation ◽  
Ion Species ◽  
Deposited Films

ABSTRACTThe chtaracteristics of ion beam assisted deposition are discussed and compared with those of photon beam assisted deposition. Effects of various deposition parameters including ion species, beam energy and substrate temperature are discussed. Deposited films usually include impurities such as C and O. Inclusion of oxygen takes place by enhanced oxidation by background oxygen and may be reduced by depositing in a clean vacuum. Promising applications of maskless ion beam assisted deposition are also discussed.

Silicide Formation in Ti-Si and Co-Si REACTIONS

1993 ◽  
Vol 311 ◽  
Author(s):  
L.L. Clevengert ◽  
Q.Q. Hong ◽  
R. Mann ◽  
J.M.E. Harpert ◽  
K. Barmake ◽  
...  
Keyword(s):  
Ion Irradiation ◽  
Three Dimensional ◽  
Titanium Silicide ◽  
High Dose ◽  
Heating Rates ◽  
Nucleation Sites ◽  
Transformation Mechanisms ◽  
Dimensional Growth ◽  
Deposited Films

ABSTRACTTitanium silicide and cobalt silicide crystallization and formation reactions are important for the processing of CMOS circuits. We demonstrate that kinetic analysis of these reactions under both high heating rates and isothermal heating conditions allows for the determination of transformation mechanisms. For Ti/Si reactions, we show that the C49 to C54-TiSi2 transformation can not be bypassed using heating rates up to 3000°C/min. For the crystallization of CoSi2 from amorphous Co-Si thin films without ion irradiation, the crystallization kinetics are characterized by three dimensional growth from quickly consumed nucleation sites. With high dose silicon ion implantation of the as-deposited films, the crystallization mechanism changes to homogeneous nucleation and two dimensional growth.

Influence of Annealing Temperature on the Properties of SnS Thin Films Prepared by Vacuum Thermal Evaporation

2017 ◽  
Vol 890 ◽  
pp. 295-298 ◽  
Author(s):  
Ngamnit Wongcharoen ◽  
Thitinai Gaewdang
Keyword(s):  
Thin Films ◽  
Hall Effect ◽  
Annealing Temperature ◽  
Thermal Evaporation ◽  
Glass Slide ◽  
Vacuum Thermal Evaporation ◽  
Hall Effect Measurements ◽  
Xrd Patterns ◽  
Sns Thin Films ◽  
Deposited Films

SnS thin films were deposited by thermal evaporation in vacuum on glass slide substrate. The as-deposited films were thermally annealed in a controlled N2 atmosphere with annealing temperature in the range 100-500°C for 30 min. XRD, AFM, UV-VIS transmittance, FTIR and Hall effect measurements were used for characterization the as-deposited and annealed films. Based on the XRD patterns, the as-deposited and annealed films were indentified as the orthrombic structure. The band gap was found to increase from 1.15 to 1.42 eV when the annealing temperature increased from 100 to 500°C. The lowest resistivity and highest carrier concentration values were observed to be 12.95 Ω.cm and 1.98×1016 cm-3 on the films annealed at 100 and 200°C, respectively.

Visualising discrete structural transformations in germanium nanowires during ion beam irradiation and subsequent annealing

Nanoscale ◽  
2014 ◽  
Vol 6 (21) ◽  
pp. 12890-12897 ◽  
Author(s):  
Roisin A. Kelly ◽  
Justin D. Holmes ◽  
Nikolay Petkov
Keyword(s):  
Ion Irradiation ◽  
Ion Beam ◽  
Structural Transformations ◽  
Subsequent Annealing ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Germanium Nanowires

A correlative approach to observe discrete structural transformations incurring in one and the same Ge nanowire upon ion irradiation and subsequent in situ annealing.

Excimer Laser Induced Deposition of Tungsten from W(CO)6 and WF6

1989 ◽  
Vol 158 ◽  
Author(s):  
Berthold Rager ◽  
Friedrich Bachmann
Keyword(s):  
Deposition Time ◽  
Deposition Process ◽  
Layer Growth ◽  
X Ray Diffraction ◽  
Reflectivity Measurement ◽  
Model Calculations ◽  
Deposition Parameters ◽  
Initial Stage ◽  
Deposited Films

ABSTRACTArF laser induced deposition of W from W(CO)6 and WF6 on Si/SiO2 surfaces was investigated. With an in-situ reflectivity measurement the growth of the layer could be monitored during the deposition process. We find that the initial stage of layer growth as well as the reflectivity as a function of deposition time depends on the laser fluence and on other deposition parameters. Model calculations, using the optical constants of deposited films, determined by ellipsometry, have been performed to compare the measured reflectivity curves with the calculated curves. The deposited layers have been analyzed by XPS, AES, X-ray Diffraction and Raman Spectroscopy. Additionally, experiments of direct pattern transfer deposition (via contact mask) with W(CO)6 show the presence of an involved surface process, which by Fresnel diffraction caused structures smaller than 0.5μm.

Influence of Deposition Parameters on Surface Texturing of ZnO:Al Films Prepared by In-line RF Magnetron Sputtering

2009 ◽  
Vol 1210 ◽  
Author(s):  
Jun-Sik Cho ◽  
Young-Jin Kim ◽  
Jeong Chul Lee ◽  
Sang-Hyun Park ◽  
Kyung Hoon Yoon
Keyword(s):  
Magnetron Sputtering ◽  
Scattered Light ◽  
Incident Light ◽  
Rf Magnetron Sputtering ◽  
Wet Etching ◽  
Visible Range ◽  
Silicon Thin Film ◽  
Working Pressure ◽  
Deposition Parameters ◽  
Deposited Films

AbstractA systematic study on the effect of sputtering deposition parameters on material properties of Al doped ZnO (ZnO:Al) films prepared by an in-line rf magnetron sputtering and on surface morphology of the films after wet etching process was carried out. For application to silicon thin film solar cells as a front electrode, the as-deposited films were surface-textured by a dilute HCl solution to improve the light scattering properties such as haze and angle resolved distribution of scattered light on the film surfaces. The microstructure of as-deposited films is affected significantly by the working pressure and film compactness decreases with increasing working pressure from 1.5 mTorr to 10 mTorr. High quality ZnO:Al films with electrical resistivity of 4.25 × 10-4 Ω cm and optical transmittance of 80% in a visible range are obtained at low working pressure of 1.5 mTorr and substrate temperature of 100℃. Crater-like surface morphologies are observed on the textured ZnO:Al films after wet etching. The size and shape of craters are closely dependent on the microstructure and film compactness of as-deposited films. Haze values of the textured ZnO:Al films are improved in a whole wavelength of 300 – 1100 nm compared to commercial SnO2:F films (Asahi U type) and incident light on the textured films is scattered effectively with 30° angle.

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