scholarly journals Selectively dry etched of p-GaN/InAlN heterostructures using BCI3-based plasma for normally-off HEMT technology

2021 ◽  
Author(s):  
Ahmet Toprak ◽  
Doğan Yılmaz ◽  
Ekmel Ozbay
Keyword(s):  
Inductively Coupled Plasma ◽  
Root Mean Square Roughness ◽  
Etching Time ◽  
Mean Square ◽  
Inductively Coupled ◽  
System A ◽  
Atomic Force ◽  
Process Pressure ◽  
Etched Surface ◽  
Roughness Measurements

Abstract In this paper, an alternative selective dry etching of p-GaN over InAlN was studied as a function of the ICP source powers, RF chuck powers and process pressure by using inductively coupled plasma reactive ion etching (ICP RIE) system. A recipe using only BCI3-based plasma with a resulting selectivity 13.5 for p-GaN in respect to InAlN was demonstrated. Surface roughness measurements depending on the etching time was performed by atomic force microscope (AFM) measurement and showed that a smooth etched surface with the root-mean-square roughness of 0.45 nm for p-GaN and 0.37 nm for InAlN were achieved. Normally-off p-GaN/InAlN HEMT device was fabricated and tested by using the BCI3-based plasma we developed.

Interplay of Defects, Microstructures, and Surface Stoichiometry during Plasma Processing of GaN

2002 ◽  
Vol 722 ◽  
Author(s):  
A. Ramam ◽  
S. Tripathy ◽  
S.J. Chua
Keyword(s):  
Plasma Etching ◽  
Photoelectron Spectroscopy ◽  
Inductively Coupled Plasma ◽  
X Ray ◽  
Force Microscopy ◽  
Inductively Coupled Plasma Etching ◽  
Inductively Coupled ◽  
Atomic Force ◽  
Etched Surface ◽  
Mg Doped

AbstractWe have investigated optical properties of dry etched GaN using photoluminescence (PL) and micro-Raman scattering. The stoichiometry of the dry etched surface has been analyzed by x-ray photoelectron spectroscopy (XPS). Atomic force microscopy (AFM) technique has been employed to investigate the microstructures resulting from dry processing. The damage introduced by inductively coupled plasma etching has been assessed and improvement of the luminescence properties is observed during post etch annealing. The observed changes in the Raman spectra of plasma etched Si- and Mg- doped GaN can be associated with electronic and vibronic scattering mechanisms of defects.

Fabrication and repair of GaN nanorods by plasma etching with self-assembled nickel nanomasks

2021 ◽  
Author(s):  
Shiying Zhang ◽  
Lei Zhang ◽  
Yueyao Zhong ◽  
Guodong Wang ◽  
Qingjun Xu
Keyword(s):  
Inductively Coupled Plasma ◽  
Average Diameter ◽  
Etching Time ◽  
X Ray Diffraction ◽  
Plasma Etch ◽  
Inductively Coupled ◽  
Icp Etching ◽  
Self Organized ◽  
Gan Film ◽  
Koh Etching

High crystal quality GaN nanorod arrays were fabricated by inductively coupled plasma (ICP) etching using self-organized nickel (Ni) nano-islands mask on GaN film and subsequent repaired process including annealing in ammonia and KOH etching. The Ni nano-islands have been formed by rapid thermal annealing, whose density, shape, and dimensions were regulated by annealing temperature and Ni layer thickness. The structural and optical properties of the nanorods obtained from GaN epitaxial layers were comparatively studied by high-resolution X-ray diffraction (HRXRD), Raman spectroscopy and photoluminescence (PL). The results indicate that damage induced by plasma can be successfully healed by annealing in NH3 at 900 °C. The average diameter of the as-etched nanorod was effectively reduced and the plasma etch damage was removed after a wet treatment process in a KOH solution. It was found that the diameter of the GaN nanorod was continuously reduced and the PL intensity first increased, then reduced and finally increased as the KOH etching time sequentially increased.

scholarly journals Physical–Chemical Exfoliation of n-Alkylamine Derivatives of Layered Perovskite-like Oxide H2K0.5Bi2.5Ti4O13 into Nanosheets

Nanomaterials ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 2708
Author(s):  
Iana A. Minich ◽  
Oleg I. Silyukov ◽  
Sergei A. Kurnosenko ◽  
Veronika V. Gak ◽  
Vladimir D. Kalganov ◽  
...  
Keyword(s):  
Self Assembly ◽  
Inductively Coupled Plasma ◽  
Layered Perovskite ◽  
Inductively Coupled ◽  
Si Substrates ◽  
Ion Exchange Reaction ◽  
Atomic Force ◽  
Chemical Exfoliation ◽  
Coating Formation ◽  
Assembly Procedure

In the present work, we report the results on exfoliation and coating formation of inorganic–organic hybrids based on the layered perovskite-like bismuth titanate H2K0.5Bi2.5Ti4O13·H2O that could be prepared by a simple ion exchange reaction from a Ruddlesden–Popper phase K2.5Bi2.5Ti4O13. The inorganic–organic hybrids were synthesized by intercalation reactions. Exfoliation into nanosheets was performed for the starting hydrated protonated titanate and for the derivatives intercalated by n-alkylamines to study the influence of preliminary intercalation on exfoliation efficiency. The selected precursors were exfoliated in aqueous solutions of tetrabutylammonium hydroxide using facile stirring and ultrasonication. The suspensions of nanosheets obtained were characterized using UV–vis spectrophotometry, dynamic light scattering, inductively coupled plasma spectroscopy, and gravimetry. Nanosheets were coated on preliminarily polyethyleneimine-covered Si substrates using a self-assembly procedure and studied using atomic force and scanning electron microscopy.

Synthesis，Film Morphology and Performance on Fabrics of a Novel Amino Functional Polysiloxane

2011 ◽  
Vol 239-242 ◽  
pp. 2981-2985
Author(s):  
Liang Xian Huang ◽  
Xi Ya Zhang ◽  
Qiu Feng An
Keyword(s):  
Cotton Fiber ◽  
Evaluation System ◽  
Chemical Structure ◽  
Wafer Surface ◽  
Root Mean Square Roughness ◽  
Film Morphology ◽  
Mean Square ◽  
Atomic Force ◽  
And Performance ◽  
Better Than

A novel polysiloxane bearing (N,N)-dimethyl-γ-aminopropyl-γ-aminopropyl side groups(ASO-2) was synthesized by copolymerization of octamethylcyclotetrasiloxane with (N,N)-dimethyl-γ-aminopropyl-γ-aminopropyl methyl dimethoxysilane and hexamethyldisiloxane. Chemical structure, film morphology and the softening fabric property of ASO-2 were characterized and investigated by IR, 1H-NMR, SEM, atomic force microscope(AFM) and Kawabata evaluation system(KES).The experiment results indicate that ASO-2 can form a hydrophobic film on both the cotton fiber and silicon wafer surface. The ASO-2 film relatively exhibits a non-homogeneous structure and uneven morphology in its AFM images. Consequently, in 2 μm2 scanning field, the root mean square roughness of ASO-2 film reaches to 0.226 nm, which is 2.69 times rougher as compared with that of N-β-aminoethyl-γ-aminopropyl polysiloxane (ASO-1) film. Application experiments indicate though the tactile of ASO-2 imparted on 100% cotton is somewhat rougher than that of ASO-1, the whiteness and wettability of the cotton treated by ASO-2 are better than those by ASO-1.

scholarly journals Influence of diatomite microstructure on its adsorption capacity for Pb(II)

2009 ◽  
Vol 41 (3) ◽  
pp. 309-317 ◽  
Author(s):  
S. Nenadovic ◽  
M. Nenadovic ◽  
R. Kovacevic ◽  
Lj. Matovic ◽  
B. Matovic ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Atomic Emission ◽  
Emission Spectrometry ◽  
Wastewater Remediation ◽  
X Ray Diffraction ◽  
Plasma Atomic Emission Spectrometry ◽  
Force Microscopy ◽  
Inductively Coupled ◽  
Atomic Force ◽  
Treated Sample

The effect of microstructural changes caused by mechanical modification on adsorption properties of diatomite samples were investigated. The microstructure has been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM) while the degree of metal adsorption was evaluated by Inductively Coupled Plasma Atomic Emission Spectrometry (ICP AES). The results show that metal sorption capacity of diatomite is considerably improved after mechanical modification and it can be attributed to amorphysation of the material. Immobilization efficiency increased from 22% for untreated to 81% for the treated sample after 5h at BPR 4.This qualifies natural diatomite as a material for wastewater remediation.

Effect of BCl3 concentration and process pressure on the GaN mesa sidewalls in BCl3/Cl2 based inductively coupled plasma etching

Vacuum ◽  
2012 ◽  
Vol 86 (12) ◽  
pp. 1844-1849 ◽  
Author(s):  
D.S. Rawal ◽  
B.K. Sehgal ◽  
R. Muralidharan ◽  
H.K. Malik ◽  
Amitava Dasgupta
Keyword(s):  
Plasma Etching ◽  
Inductively Coupled Plasma ◽  
Inductively Coupled Plasma Etching ◽  
Inductively Coupled ◽  
Process Pressure

scholarly journals Partitioning and Surficial Segregation of Trace Elements in Iron Oxides in Hydrothermal Fluid Systems

Minerals ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 57
Author(s):  
Nikolay Smagunov ◽  
Vladimir Tauson ◽  
Sergey Lipko ◽  
Dmitriy Babkin ◽  
Taisa Pastushkova ◽  
...  
Keyword(s):  
Trace Elements ◽  
Inductively Coupled Plasma ◽  
Absorption Spectrometry ◽  
X Ray ◽  
Force Microscopy ◽  
Inductively Coupled ◽  
Atomic Force ◽  
Fluid Systems ◽  
Nonautonomous Phase ◽  
Plasma Mass Spectrometry

Partitioning experiments were done by hydrothermal synthesis of crystals containing trace elements (TEs) by internal sampling of fluid at the temperature of 450 °C and pressure of 1 kbar. The crystal phases obtained were magnetite, hematite, and Ni-spinel, which were studied using X-ray diffraction (XRD), X-ray electron probe microanalysis (EPMA), laser ablation inductively coupled plasma mass spectrometry (LA-ICP-MS), atomic absorption spectrometry (AAS), and atomic force microscopy (AFM). The solutions from the sampler’s fluid probes were analysed by AAS for TEs included elements of the iron group plus aluminium. The highest co-crystallisation coefficients of TE and Fe between mineral and fluid (DTE/Fe) in magnetite were measured for V, Al, Ni and Cr (in decreasing order of n units in value), a lower value was observed for Co (2 × 10−1), and still lower values for Ti, Zn, and Mn (n × 10−2–10−3). In hematite, DTE/Fe values were highest for Al and V (order of n units in value), while lower values characterised Ti, Cr, and Co (n × 10−1–10−3), and the lowest values were exhibited by Cu, Mn, and Zn (n × 10−5). Copper was confirmed to be the most incompatible with all minerals studied; however, Cu had a high content on crystal surfaces. This surficial segregation contributes to the average TE concentration even when a thin layer of nonautonomous phase (NAP) is enriched in the element of interest. The accumulation of TEs on the surface of crystals increased bulk content 1–2 orders of magnitude above the content of structurally-bound elements even in coarse crystals. The inverse problem—evaluation of TE/Fe ratios in fluids involved in the formation of magnetite-containing deposits—revealed that the most abundant metals in fluids were Fe followed by Mn, Zn, and Cu, which comprised 10 to 30% of the total iron content.

Post-CMP Cleaning of Atom-Scale Planarization Surface of Computer Hard Disk Substrate

2010 ◽  
Vol 97-101 ◽  
pp. 1181-1185
Author(s):  
Nai Jing Bu ◽  
Hong Lei ◽  
Ru Ling Chen ◽  
Xiao Li Hu
Keyword(s):  
Inductively Coupled Plasma ◽  
Hard Disk ◽  
Atomic Emission ◽  
Force Microscopy ◽  
Inductively Coupled ◽  
Atomic Force ◽  
Cleaning Solution ◽  
Hard Disk Substrate ◽  
Cleaning Methods ◽  
Disk Substrate

At present, the surface of computer hard disk substrate has reached atom-scale planarization after chemical mechanical polishing (CMP). Post-CMP cleaning is one of the key factors influencing the CMP performances. During cleaning, cleaning solution and cleaning methods play a key role in cleaning quality and effectiveness. In the present paper, alkylpolyoxyethylene alcohol carboxylic ester (FAC) surfactant was synthesized and its cleaning performances on atom-scale planarization surface of computer hard disk substrate were investigated. Microscope analysis indicated that the prepared detergent containing FAC surfactant exhibited improved cleaning performances compared with the commercial detergent. Further, inductively coupled plasma (ICP) atomic emission spectrometer, auger electron spectrogram (AES) and atomic force microscopy (AFM) analyses after static corrosion test showed that the prepared cleaning solution had lower corrosion to hard disk substrate.

Optimizations of inductively coupled plasma etching and design for sensing window of Mach–Zehnder interferometer sensor in polymer technology

2014 ◽  
Vol 28 (06) ◽  
pp. 1450044 ◽  
Author(s):  
Tianfu Yang ◽  
Tianjiao Wang ◽  
Chuantao Zheng ◽  
Xibin Wang ◽  
Daming Zhang
Keyword(s):  
Plasma Etching ◽  
Inductively Coupled Plasma ◽  
Propagation Loss ◽  
Zehnder Interferometer ◽  
Etching Time ◽  
Stable Operation ◽  
Inductively Coupled Plasma Etching ◽  
Inductively Coupled ◽  
Etching Parameters ◽  
Mach Zehnder Interferometer

The inductively coupled plasma etching parameters for fabricating sensing windows of integrated Mach–Zehnder interferometer sensor based on polymers are systematically investigated. Under the optimum etching condition, we fabricate an improved sensing waveguide with three sensing surfaces, whose sensitivity can be enhanced by a factor of 3.5 in theory. Through precisely controlling the etching time, low propagation loss and high hydrophilicity are both achieved in the etched sensing waveguide. This optimizing approach along with rapid response and stable operation has rendered the MZI waveguide sensor more competent to practical requirements of RI sensing and biochemical sensing.

scholarly journals Fluorine-based Inductively Coupled Plasma Etching of α-Ga2O3 Epitaxy Film

2021 ◽  
Vol 59 (2) ◽  
pp. 121-126
Author(s):  
Ji Hun Um ◽  
Byoung Su Choi ◽  
Woo Sik Jang ◽  
Sungu Hwang ◽  
Dae-Woo Jeon ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Inductively Coupled Plasma ◽  
Etch Rate ◽  
Smooth Surface ◽  
Vertical Sidewall ◽  
Source Power ◽  
Inductively Coupled ◽  
Process Pressure ◽  
Coupled Plasmas ◽  
Dry Etch

α-Ga2O3 has the largest bandgap (~5.3 eV) among the five polymorphs of Ga2O3 and is a promising candidate for high power electronic and optoelectronic devices. To fabricate various device structures, it is important to establish an effective dry etch process which can provide practical etch rate, smooth surface morphology and low ion-induced damage. Here, the etch characteristics of α-Ga2O3 epitaxy film were examined in two fluorine-based (CF4/Ar and SF6/Ar) inductively coupled plasmas. Under the same source power, rf chuck power and process pressure, an Ar-rich composition of CF4/Ar and an SF6-rich composition of SF6/Ar produced the highest etch rates. Monotonic increase in the etch rate was observed as the source power and rf chuck power increased in the 2CF4/13Ar discharges, and a maximum etch rate of ~855 Å/min was obtained at a 500 W source power, 250 W rf chuck power, and 2 mTorr pressure. A smooth surface morphology with normalized roughness of less than ~1.38 was achieved in the 2CF4/13Ar and 13SF6/2Ar discharges under most of the conditions examined. The features etched into the α-Ga2O3 layer using a 2CF4/13Ar discharge with 2 mTorr pressure showed good anisotropy with a vertical sidewall profile.

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