scholarly journals Performance of quartz- and sapphire-based double-crystal high-resolution (∼10 meV) RIXS monochromators under varying power loads

2018 ◽  
Vol 25 (4) ◽  
pp. 1030-1035 ◽  
Author(s):  
Thomas Gog ◽  
Diego M. Casa ◽  
Jonathan Knopp ◽  
Jungho Kim ◽  
Mary H. Upton ◽  
...  
Keyword(s):  
High Resolution ◽  
Incident Beam ◽  
Resolving Power ◽  
The Novel ◽  
Double Crystal ◽  
X Ray Scattering ◽  
Instrument Resolution ◽  
Band Pass ◽  
Room Temperature Operation ◽  
Intrinsic Energy

In the context of a novel, high-resolution resonant inelastic X-ray scattering spectrometer, a flat-crystal-based quartz analyzer system has recently been demonstrated to provide an unprecedented intrinsic-energy resolution of 3.9 meV at the Ir L 3 absorption edge (11.215 keV) [Kim et al. (2018) Sci. Rep. 8, 1958]. However, the overall instrument resolution was limited to 9.7 meV because of an 8.9 meV incident band pass, generated by the available high-resolution four-bounce Si(844) monochromator. In order to better match the potent resolving power of the novel analyzer with the energy band pass of the incident beam, a quartz(309)-based double-bounce, high-resolution monochromator was designed and implemented, expected to yield an overall instrument resolution of 6.0 meV. The choice of lower-symmetry quartz is very attractive because of its wealth of suitable near-backscattering reflections. However, it was found that during room-temperature operation typical levels of incident power, barely affecting the Si monochromator, caused substantial thermal distortions in the first crystal of the quartz monochromator, rendering it practically unusable. Finite-element analyses and heat-flow analyses corroborate this finding. As a high-flux, lower resolution (15.8 meV) alternative, a two-bounce sapphire(078) version was also tested and found to be less affected than quartz, but notably more than silicon.

Scatterless hybrid metal–single-crystal slit for small-angle X-ray scattering and high-resolution X-ray diffraction

2008 ◽  
Vol 41 (6) ◽  
pp. 1134-1139 ◽  
Author(s):  
Youli Li ◽  
Roy Beck ◽  
Tuo Huang ◽  
Myung Chul Choi ◽  
Morito Divinagracia
Keyword(s):  
High Resolution ◽  
Single Crystal ◽  
Small Angle ◽  
Incident Beam ◽  
Single Crystal Substrate ◽  
X Ray Diffraction ◽  
Metal Base ◽  
X Ray ◽  
X Ray Scattering ◽  
Ray Scattering

A simple hybrid design has been developed to produce practically scatterless aperture slits for small-angle X-ray scattering and high-resolution X-ray diffraction. The hybrid slit consists of a rectangular single-crystal substrate (e.g.Si or Ge) bonded to a high-density metal base with a large taper angle (> 10°). The beam-defining single-crystal tip is oriented far from any Bragg peak position with respect to the incident beam and hence produces none of the slit scattering commonly associated with conventional metal slits. It has been demonstrated that the incorporation of the scatterless slits leads to a much simplified design in small-angle X-ray scattering instruments employing only one or two apertures, with dramatically increased intensity (a threefold increase observed in the test setup) and improved low-angle resolution.

scholarly journals Theoretical analysis of double-crystal spectrograph for high-resolution spectroscopy of laser-generated X-rays

1992 ◽  
Vol 10 (4) ◽  
pp. 841-847 ◽  
Author(s):  
O. Renner ◽  
M. Kopecký
Keyword(s):  
High Resolution ◽  
Single Crystal ◽  
Resolving Power ◽  
High Resolution Spectroscopy ◽  
High Dispersion ◽  
X Rays ◽  
Plasma Spectroscopy ◽  
Single Crystal Diffraction ◽  
Double Crystal ◽  
Quantitative Characteristics

Vertical dispersion variant of the double-crystal spectrograph is analyzed and its basic quantitative characteristics (luminosity, resolving power) are computed using ray tracing code. It is shown that geometric apparatus smearing is minimized due to high dispersion and spectral resolution may considerably exceed the single-crystal diffraction limit. Performing high-resolution spectral work, the efficiency of the double-crystal apparatus exceeds that of the flat single-crystal spectrograph. The usefulness of this method in laser plasma spectroscopy is demonstrated analyzing the detection of phosphorus He-like resonance line and its satellites.

RESONANT INELASTIC SOFT X-RAY SCATTERING OF INSULATING CUPRATES

2002 ◽  
Vol 09 (02) ◽  
pp. 1103-1108 ◽  
Author(s):  
L.-C. DUDA ◽  
T. SCHMITT ◽  
J. NORDGREN ◽  
G. DHALENNE ◽  
A. REVCOLEVSCHI
Keyword(s):  
High Resolution ◽  
Energy Loss ◽  
Lower Energy ◽  
High Energy ◽  
Low Energy ◽  
The Novel ◽  
Excitation Peak ◽  
X Ray ◽  
X Ray Scattering ◽  
Large Spread

We have performed high-resolution inelastic X-ray emission scattering experiments at the Cu 3p-, Cu 3s-, and O 1s-resonances of the insulating cuprates CuGeO 3, CuO, La 2 CuO 4, and SrCuO 2. We introduce the novel low-energy s-edge Cu-RIXS which reveals a dd-excitation peak, which was previously unobserved due to insufficient resolution and intensity in high-energy (Cu 1s RIXS). Also, O 1s-RIXS of all cuprate sample is investigated. Surprisingly, there is a large spread in the energy loss values of the RIXS features for different compounds and we explain this by assigning the larger energy features to the occurrence of a Zhang–Rice singlet while the lower energy feature (only observed for CuGeO 3) is assigned to a dd-excitation.

scholarly journals Spherical analyzers and monochromators for resonant inelastic hard X-ray scattering: a compilation of crystals and reflections

2012 ◽  
Vol 20 (1) ◽  
pp. 74-79 ◽  
Author(s):  
Thomas Gog ◽  
Diego M. Casa ◽  
Ayman H. Said ◽  
Mary H. Upton ◽  
Jungho Kim ◽  
...  
Keyword(s):  
High Resolution ◽  
Lithium Niobate ◽  
Silicon Germanium ◽  
Early Stage ◽  
Double Crystal ◽  
Actual Performance ◽  
X Ray ◽  
Stage Of Development ◽  
X Ray Scattering ◽  
Ray Scattering

Resonant inelastic X-ray scattering (RIXS) experiments require special sets of near-backscattering spherical diced analyzers and high-resolution monochromators for every distinct absorption-edge energy and emission line. For the purpose of aiding the design and planning of efficient RIXS experiments, comprehensive lists of suitable analyzer reflections for silicon, germanium, α-quartz, sapphire and lithium niobate crystals were compiled for a multitude of absorption edges and emission lines. Analyzers made from lithium niobate, sapphire or α-quartz offer many choices of reflections with intrinsic resolutions currently unattainable from silicon or germanium. In some cases these materials offer higher intensities at comparable resolutions. While lithium niobate, sapphire or α-quartz analyzers are still in an early stage of development, the present compilation can serve as a computational basis for assessing expected and actual performance. With regard to high-resolution monochromators, bandpass and throughput calculations for combinations of double-crystal, high-heat-load and near-backscattering high-resolution channel-cuts were assembled. The compilation of these analyzer and monochromator data is publicly available on a website.

scholarly journals The high-resolution diffraction beamline P08 at PETRA III

2011 ◽  
Vol 19 (1) ◽  
pp. 30-38 ◽  
Author(s):  
O. H. Seeck ◽  
C. Deiter ◽  
K. Pflaum ◽  
F. Bertam ◽  
A. Beerlink ◽  
...  
Keyword(s):  
High Resolution ◽  
Synchrotron Radiation ◽  
Resolving Power ◽  
Third Generation ◽  
Solid Samples ◽  
High Quality ◽  
Optical Elements ◽  
X Ray ◽  
X Ray Scattering ◽  
Very High

The new third-generation synchrotron radiation source PETRA III located at the Deutsches Elektronen-Synchrotron DESY in Hamburg, Germany, has been operational since the second half of 2009. PETRA III is designed to deliver hard X-ray beams with very high brilliance. As one of the first beamlines of PETRA III the high-resolution diffraction beamline P08 is fully operational. P08 is specialized in X-ray scattering and diffraction experiments on solids and liquids where extreme high resolution in reciprocal space is required. The resolving power results in the high-quality PETRA III beam and unique optical elements such as a large-offset monochromator and beryllium lens changers. A high-precision six-circle diffractometer for solid samples and a specially designed liquid diffractometer are installed in the experimental hutch. Regular users have been accepted since summer 2010.

The High Resolution Scanning Transmission Electron Microscope

1974 ◽  
Vol 32 ◽  
pp. 316-317
Author(s):  
A. V. Crewe
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
High Vacuum ◽  
Scanning Transmission Electron Microscope ◽  
Ultra High Vacuum ◽  
Resolving Power ◽  
Imaging Characteristics ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
The Moment

The high resolution STEM is now a fact of life. I think that we have, in the last few years, demonstrated that this instrument is capable of the same resolving power as a CEM but is sufficiently different in its imaging characteristics to offer some real advantages.It seems possible to prove in a quite general way that only a field emission source can give adequate intensity for the highest resolution^ and at the moment this means operating at ultra high vacuum levels. Our experience, however, is that neither the source nor the vacuum are difficult to manage and indeed are simpler than many other systems and substantially trouble-free.

An Analysis of Dissociation of Molecules in a High Resolution Electron Microscope

1973 ◽  
Vol 31 ◽  
pp. 486-487
Author(s):  
Mihir Parikh
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Cross Sections ◽  
Resolving Power ◽  
Peak Intensity ◽  
Molecular Film ◽  
Resolution Electron ◽  
Dissociation Cross Section ◽  
High Resolution Electron Microscope ◽  
The Stability

It is well known that the resolution of bio-molecules in a high resolution electron microscope depends not just on the physical resolving power of the instrument, but also on the stability of these molecules under the electron beam. Experimentally, the damage to the bio-molecules is commo ly monitored by the decrease in the intensity of the diffraction pattern, or more quantitatively by the decrease in the peaks of an energy loss spectrum. In the latter case the exposure, EC, to decrease the peak intensity from IO to I’O can be related to the molecular dissociation cross-section, σD, by EC = ℓn(IO /I’O) /ℓD. Qu ntitative data on damage cross-sections are just being reported, However, the microscopist needs to know the explicit dependence of damage on: (1) the molecular properties, (2) the density and characteristics of the molecular film and that of the support film, if any, (3) the temperature of the molecular film and (4) certain characteristics of the electron microscope used

Remarks on the application of backscattered electron imaging (BEI) to the scanning electron microscopy (SEM) of biological structures

1983 ◽  
Vol 41 ◽  
pp. 484-487
Author(s):  
Etienne de Harven
Keyword(s):  
High Resolution ◽  
Incident Beam ◽  
Spot Size ◽  
Primary Electron ◽  
Critical Point Drying ◽  
Cell Shapes ◽  
High Resolution Images ◽  
Backscattered Electron ◽  
Electron Imaging ◽  
Scanning Electron

Biological ultrastructures have been extensively studied with the scanning electron microscope (SEM) for the past 12 years mainly because this instrument offers accurate and reproducible high resolution images of cell shapes, provided the cells are dried in ways which will spare them the damage which would be caused by air drying. This can be achieved by several techniques among which the critical point drying technique of T. Anderson has been, by far, the most reproducibly successful. Many biologists, however, have been interpreting SEM micrographs in terms of an exclusive secondary electron imaging (SEI) process in which the resolution is primarily limited by the spot size of the primary incident beam. in fact, this is not the case since it appears that high resolution, even on uncoated samples, is probably compromised by the emission of secondary electrons of much more complex origin.When an incident primary electron beam interacts with the surface of most biological samples, a large percentage of the electrons penetrate below the surface of the exposed cells.

Practical High Resolution Microscopy

1968 ◽  
Vol 26 ◽  
pp. 302-303
Author(s):  
P. A. Marsh ◽  
T. Mullens ◽  
D. Price
Keyword(s):  
High Resolution ◽  
Magnetic Fields ◽  
Low Frequency ◽  
Resolving Power ◽  
Careful Attention ◽  
Electron Microscopes ◽  
The Relationship ◽  
High Resolution Microscopy ◽  
New Facilities

It is possible to exceed the guaranteed resolution on most electron microscopes by careful attention to microscope parameters essential for high resolution work. While our experience is related to a Philips EM-200, we hope that some of these comments will apply to all electron microscopes.The first considerations are vibration and magnetic fields. These are usually measured at the pre-installation survey and must be within specifications. It has been our experience, however, that these factors can be greatly influenced by the new facilities and therefore must be rechecked after the installation is completed. The relationship between the resolving power of an EM-200 and the maximum tolerable low frequency interference fields in milli-Oerstedt is 10 Å - 1.9, 8 Å - 1.4, 6 Å - 0.8.

Resolution and measurement in the scanning electron microscope

1987 ◽  
Vol 45 ◽  
pp. 534-537 ◽  
Author(s):  
Michael T. Postek
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Engineering Design ◽  
Resolving Power ◽  
Practical Applications ◽  
Instrument Resolution ◽  
Accurate Definition ◽  
Definition Of ◽  
Scanning Electron ◽  
Better Than

The term ultimate resolution or resolving power is the very best performance that can be obtained from a scanning electron microscope (SEM) given the optimum instrumental conditions and sample. However, as it relates to SEM users, the conventional definitions of this figure are ambiguous. The numbers quoted for the resolution of an instrument are not only theoretically derived, but are also verified through the direct measurement of images on micrographs. However, the samples commonly used for this purpose are specifically optimized for the measurement of instrument resolution and are most often not typical of the sample used in practical applications.SEM RESOLUTION. Some instruments resolve better than others either due to engineering design or other reasons. There is no definitively accurate definition of how to quantify instrument resolution and its measurement in the SEM.

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