(Al)GaInP laser with lateral confinement by epitaxial growth on nonplanar substrates

1993 ◽  
Vol 5 (10) ◽  
pp. 1125-1128 ◽  
Author(s):  
G.-L. Bona ◽  
P. Unger ◽  
N.I. Buchan ◽  
W. Heuberger ◽  
A. Jakubowicz ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Lateral Confinement

Effects of Size and Shape of Lateral Confinement on the Formation of NiSi2, CoSi2 and TiSi2 on Silicon Inside Miniature Size Oxide Openings

1996 ◽  
Vol 427 ◽  
Author(s):  
L. J. Chen ◽  
J. Y. Yew ◽  
S. L. Cheng ◽  
K. M. Chen ◽  
K. Nakamura ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Stress Level ◽  
Lateral Confinement ◽  
Size And Shape ◽  
Lower Temperature ◽  
Single Orientation

AbstractThe effects of size and shape of lateral confinement on the formation of NiSi2, CoSi2 and TiSi2 on silicon inside miniature size oxide openings have been investigated. Epitaxial growth of NiSi2 of single orientation on (111)Si was found to occur at a temperature as low as 400 °C inside both contact holes and linear openings of 0.3 μm or smaller in size. Contact holes were found to be more effective in inducing the epitaxial growth of NiSi2 of single orientation than that of linear openings of the same size. The effects of size and shape of lateral confinement on the epitaxial growth of NiSi2 on (111)Si are correlated with the stress level inside oxide openings. The faceting of CoSi2 was found to occur at a lower temperature inside oxide openings of smaller size. C49-C54 TiSi2 transformation was observed to be more difficult on both blank and BF2+ implanted (001)Si inside smaller size oxide openings.

Epitaxial Growth of NiSi2 and CoSi2 on Laterally Confined Silicon by Rapid Thermal Annealing

1989 ◽  
Vol 146 ◽  
Author(s):  
H.F. Hsu ◽  
J.J. Chu ◽  
L.J. Chen
Keyword(s):  
Electron Beam ◽  
Epitaxial Growth ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Metal Films ◽  
Electron Beam Evaporation ◽  
Two Dimensional ◽  
Geometrical Configuration ◽  
Lateral Confinement ◽  
Stress Levels

ABSTRACTEpitaxial growth of NiSi2 and CoSi2 on silicon inside miniature oxide openings by rapid thermal annealing has been studied. Effects of lateral confinement, including two-dimensional and linear oxide openings, as well as deposition methods on the growth of NiSi2 and CoSi2 on silicon were investigated. Vast difference found in the behaviors of the growth of epitaxy inside oxide openings between samples with the metal films deposited by electron beam evaporation and sputtering are attributed to the differences in the geometrical configuration of the films and stress levels as well as surface cleanliness.

Direct Observations of the Epitaxial Growth of Sputtered Ag on Si

1973 ◽  
Vol 31 ◽  
pp. 122-123
Author(s):  
J. S. Maa ◽  
Thos. E. Hutchinson
Keyword(s):  
Epitaxial Growth ◽  
Film Growth ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Microscopy Technique ◽  
Direct Observations ◽  
In Situ Electron Microscopy ◽  
Beam Sputtering ◽  
The Subject

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.

Electron Energy Analysis of Germanium and Silica Layers on Silicon Substrates

1975 ◽  
Vol 33 ◽  
pp. 96-97
Author(s):  
R. W. Ditchfield ◽  
A. G. Cullis
Keyword(s):  
Epitaxial Growth ◽  
Electron Energy ◽  
Silicon Substrates ◽  
Secondary Phases ◽  
Si Substrates ◽  
Transmission Electron ◽  
Layer Structures ◽  
Si Films ◽  
Electron Energy Loss ◽  
Growth Centres

An energy analyzing transmission electron microscope of the Möllenstedt type was used to measure the electron energy loss spectra given by various layer structures to a spatial resolution of 100Å. The technique is an important, method of microanalysis and has been used to identify secondary phases in alloys and impurity particles incorporated into epitaxial Si films.Layers Formed by the Epitaxial Growth of Ge on Si Substrates Following studies of the epitaxial growth of Ge on (111) Si substrates by vacuum evaporation, it was important to investigate the possible mixing of these two elements in the grown layers. These layers consisted of separate growth centres which were often triangular and oriented in the same sense, as shown in Fig. 1.

AEM of reaction-bonded SiC

1992 ◽  
Vol 50 (1) ◽  
pp. 344-345
Author(s):  
K Das Chowdhury ◽  
R. W. Carpenter ◽  
W. Braue
Keyword(s):  
Mechanical Properties ◽  
Phase Transformation ◽  
High Temperature ◽  
Epitaxial Growth ◽  
Liquid Silicon ◽  
Structural Ceramic ◽  
Few Data

Research on reaction-bonded SiC (RBSiC) is aimed at developing a reliable structural ceramic with improved mechanical properties. The starting materials for RBSiC were Si,C and α-SiC powder. The formation of the complex microstructure of RBSiC involves (i) solution of carbon in liquid silicon, (ii) nucleation and epitaxial growth of secondary β-SiC on the original α-SiC grains followed by (iii) β>α-SiC phase transformation of newly formed SiC. Due to their coherent nature, epitaxial SiC/SiC interfaces are considered to be segregation-free and “strong” with respect to their effect on the mechanical properties of RBSiC. But the “weak” Si/SiC interface limits its use in high temperature situations. However, few data exist on the structure and chemistry of these interfaces. Microanalytical results obtained by parallel EELS and HREM imaging are reported here.

Modeling of silicon epitaxial growth with SiHCl3 in a CVD barrel reactor at atmospheric pressure

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-221-Pr8-228
Author(s):  
E. de Paola ◽  
P. Duverneuil ◽  
A. Langlais ◽  
M. Nguyen
Keyword(s):  
Epitaxial Growth ◽  
Atmospheric Pressure ◽  
Barrel Reactor

LIQUID PHASE EPITAXIAL GROWTH OF InxGa1-xAs/ InP NEAR SOLID INSTABILITY

1982 ◽  
Vol 43 (C5) ◽  
pp. C5-3-C5-10 ◽  
Author(s):  
M. C. Joncour ◽  
J. L. Benchimol ◽  
J. Burgeat ◽  
M. Quillec
Keyword(s):  
Liquid Phase ◽  
Epitaxial Growth ◽  
Liquid Phase Epitaxial ◽  
Liquid Phase Epitaxial Growth

Epitaxial Growth of Sr0.3Ba0.7Nb2O6 Thin Films Prepared by Sol-Gel Process

1999 ◽  
Vol 606 ◽  
Author(s):  
Keishi Nishio ◽  
Jirawat Thongrueng ◽  
Yuichi Watanabe ◽  
Toshio Tsuchiya
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Epitaxial Growth ◽  
Raw Materials ◽  
Substrate Surface ◽  
Sol Gel ◽  
Tungsten Bronze ◽  
Monomethyl Ether ◽  
Tetragonal Tungsten Bronze ◽  
Sol Gel Process

AbstructWe succeeded in the preparation of strontium-barium niobate (Sr0.3Ba0.7Nb2O6 : SBN30)that have a tetragonal tungsten bronze type structure thin films on SrTiO3 (100), STO, or La doped SrTiO3 (100), LSTO, single crystal substrates by a spin coating process. LSTO substrate can be used for electrode. A homogeneous coating solution was prepared with Sr and Ba acetates and Nb(OEt)5 as raw materials, and acetic acid and diethylene glycol monomethyl ether as solvents. The coating thin films were sintered at temperature from 700 to 1000°C for 10 min in air. It was confirmed that the thin films on STO substrate sintered above 700°C were in the epitaxial growth because the 16 diffraction spots were observed on the pole figure using (121) reflection. The <130> and <310> direction of the thin film on STO were oriented with the c-axis in parallel to the substrate surface. However, the diffraction spots of thin film on LSTO substrate sintered at 700°C were corresponds to the expected pattern for (110).

Evaluation of Device Parameters for Membrane Lasers on Si Fabricated with Active-Layer Bonding Followed by Epitaxial Growth

2017 ◽  
Vol E100.C (2) ◽  
pp. 196-203 ◽  
Author(s):  
Takuro FUJII ◽  
Koji TAKEDA ◽  
Erina KANNO ◽  
Koichi HASEBE ◽  
Hidetaka NISHI ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Active Layer
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