Effects of Size and Shape of Lateral Confinement on the Formation of NiSi2, CoSi2 and TiSi2 on Silicon Inside Miniature Size Oxide Openings

1996 ◽  
Vol 427 ◽  
Author(s):  
L. J. Chen ◽  
J. Y. Yew ◽  
S. L. Cheng ◽  
K. M. Chen ◽  
K. Nakamura ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Stress Level ◽  
Lateral Confinement ◽  
Size And Shape ◽  
Lower Temperature ◽  
Single Orientation

AbstractThe effects of size and shape of lateral confinement on the formation of NiSi2, CoSi2 and TiSi2 on silicon inside miniature size oxide openings have been investigated. Epitaxial growth of NiSi2 of single orientation on (111)Si was found to occur at a temperature as low as 400 °C inside both contact holes and linear openings of 0.3 μm or smaller in size. Contact holes were found to be more effective in inducing the epitaxial growth of NiSi2 of single orientation than that of linear openings of the same size. The effects of size and shape of lateral confinement on the epitaxial growth of NiSi2 on (111)Si are correlated with the stress level inside oxide openings. The faceting of CoSi2 was found to occur at a lower temperature inside oxide openings of smaller size. C49-C54 TiSi2 transformation was observed to be more difficult on both blank and BF2+ implanted (001)Si inside smaller size oxide openings.

Epitaxial Growth of NiSi2 on (111)Si Inside 0.1-0.6 μM in Size Oxide Openings Prepared by Electron Beam Lithography

1996 ◽  
Vol 427 ◽  
Author(s):  
J. Y. Yew ◽  
L. J. Chen ◽  
K. Nakamura
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
Epitaxial Growth ◽  
Electron Beam Lithography ◽  
Stress Measurement ◽  
Deep Submicron ◽  
Film Stress ◽  
Size And Shape ◽  
Thin Film Stress ◽  
Single Orientation

AbstractEpitaxial growth of NiSi2 on (111)Si inside 0.1-0.6 4m in size oxide openings prepared by electron beam lithography has been studied by field emission scanning electron microscopy, transmission electron microscopy and thin film stress measurement. Striking effects of size and shape of deep submicron oxide openings on the growth of NiSi2 epitaxy were observed. Epitaxial growth of NiSi2 of single orientation on (111)Si was found to occur at a temperature as low as 400 °C inside both contact holes and linear openings of 0.3. μm or smaller in size. Contact holes were found to be more effective in inducing the epitaxial growth of NiSi2 of single orientation than that of linear openings of the same size. The effects of size and shape of lateral confinement on the epitaxial growth of NiSi2 on (111)Si are correlated with the stress level inside oxide openings.

(Al)GaInP laser with lateral confinement by epitaxial growth on nonplanar substrates

1993 ◽  
Vol 5 (10) ◽  
pp. 1125-1128 ◽  
Author(s):  
G.-L. Bona ◽  
P. Unger ◽  
N.I. Buchan ◽  
W. Heuberger ◽  
A. Jakubowicz ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Lateral Confinement

scholarly journals Образование полуполярных III-нитридных слоев на поверхности Si(100), структурированной с помощью самоформирующейся наномаски

2021 ◽  
Vol 55 (4) ◽  
pp. 356
Author(s):  
В.Н. Бессолов ◽  
Е.В. Коненкова ◽  
С.Н. Родин ◽  
Д.С. Кибалов ◽  
В.К. Смирнов
Keyword(s):  
Epitaxial Growth ◽  
Vapor Phase ◽  
Silicon Surface ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Symmetric State ◽  
Corrugated Surface ◽  
Element Size ◽  
Initial Stage ◽  
Semipolar Gan ◽  
Single Orientation

The epitaxial growth of AlN and GaN layers was studied by Metalorganic Vapor Phase Epitaxy, on a Si(100) substrate, on the surface of which a V-shaped nanostructure with sub-100 nm element size (NP-Si(100)) was formed. It is shown that a corrugated surface is formed from semipolar AlN(10-11) planes with opposite "c"axes during the formation of a semipolar AlN layer at the initial stage of epitaxy. Then, during the growth of the GaN layer, the transition from the symmetric state of two semipolar AlN planes to an asymmetric state with a single orientation of the "c"-axis of the semipolar GaN(10-11) layer occurs, and the "c" direction in the growing semipolar layer coincides with the direction of the flow of N2+ ions to the silicon surface during the formation of a nanomask.

Time-Temperature-Stress Superposition Principle: Brief Description and Application to Polymer Creep Behavior

2012 ◽  
Vol 602-604 ◽  
pp. 681-684
Author(s):  
Yong Hua Li ◽  
Cheng Kai Jiang
Keyword(s):  
Temperature Stress ◽  
Stress Level ◽  
Creep Behavior ◽  
Physical Aging ◽  
Superposition Principle ◽  
Nonlinear Creep ◽  
Stress Superposition ◽  
Lower Temperature ◽  
Term Creep

A new accelerated characterization model for creep performances was briefly introduced first, which considers both the effects of temperature and stress level, named time-temperature- stress superposition principle (TTSSP). TTSSP assumes that the influence of stress level on the intrinsic time is similar to that of temperature for the creep behavior, as well as damage and physical aging. The creep curves at different state can be shifted into a master curve at reference state using TTSSP. Then the long-term creep behavior of viscoelastic materials at lower temperature and/or stress level can be predicted from the short-term ones. Finally, TTSSP was used to investigate the nonlinear creep behavior of high-density polyethylene (HDPE). It was shown that the long-term creep behavior of HDPE can be predicted successfully.

scholarly journals Epitaxial growth of single-orientation high-quality MoS 2 monolayers

2D Materials ◽  
2018 ◽  
Vol 5 (3) ◽  
pp. 035012 ◽  
Author(s):  
Harsh Bana ◽  
Elisabetta Travaglia ◽  
Luca Bignardi ◽  
Paolo Lacovig ◽  
Charlotte E Sanders ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
High Quality ◽  
Single Orientation

Epitaxial Growth of NiSi2 and CoSi2 on Laterally Confined Silicon by Rapid Thermal Annealing

1989 ◽  
Vol 146 ◽  
Author(s):  
H.F. Hsu ◽  
J.J. Chu ◽  
L.J. Chen
Keyword(s):  
Electron Beam ◽  
Epitaxial Growth ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Metal Films ◽  
Electron Beam Evaporation ◽  
Two Dimensional ◽  
Geometrical Configuration ◽  
Lateral Confinement ◽  
Stress Levels

ABSTRACTEpitaxial growth of NiSi2 and CoSi2 on silicon inside miniature oxide openings by rapid thermal annealing has been studied. Effects of lateral confinement, including two-dimensional and linear oxide openings, as well as deposition methods on the growth of NiSi2 and CoSi2 on silicon were investigated. Vast difference found in the behaviors of the growth of epitaxy inside oxide openings between samples with the metal films deposited by electron beam evaporation and sputtering are attributed to the differences in the geometrical configuration of the films and stress levels as well as surface cleanliness.

Some Aspects of the Growth of Single and Mixed Populations of Flagellates and Ciliates

1956 ◽  
Vol 33 (4) ◽  
pp. 627-644
Author(s):  
SMILJA MUČIBABIĆ
Keyword(s):  
Population Growth ◽  
Maximum Yield ◽  
Maximum Size ◽  
Multiplication Rate ◽  
Size And Shape ◽  
Different Temperatures ◽  
Temperature Ranges ◽  
Lower Temperature Range ◽  
Lower Temperature ◽  
The Relationship

Populations of Chilomonas paramecium have been maintained in a standard concentration of nutrient medium (0.1% beef-extract with 0.1% sodium acetate), at eight different temperatures, from 5 to 36° C. The temperatures 5 and 36° C. did not support the growth of a population. The rate of population growth increased with increase of temperature up to a maximum, and then decreased. The maximum yield, on the other hand, was not affected, within wide limits, by different temperatures. The relationship between temperature and maximum size of population was different when maximum size was expressed in total number of organisms from that when maximum size was expressed in terms of total volume of organisms. In the former case, the maximum size increased with the increase of temperature; while in the latter it decreased with increase of temperature. Bělehrádek's temperature coefficient, b, of the multiplication rate of Chilomonas did not show significant differences for different temperature ranges, while the coefficients Q10, and the thermal increment µ were larger for the lower temperature range. The size and shape of Chilomonas were found to depend on the temperature and on the age of the population. With increase in temperature, the size of organisms decreased to a minimum and then increased again, so that organisms were largest at extreme temperatures. In general, the organisms were more slender at lower than at higher temperatures. At all temperatures, the flagellate increased in size at the beginning of population growth and later decreased. Variation in size and shape was greatest at the beginning of growth and during transition to the maximum stationary phase.

Formation of Epitaxial NiSi2 and CoSi2 On Laterally Confined (111)Si

1987 ◽  
Vol 91 ◽  
Author(s):  
C.S. Chang ◽  
C.W. Nieh ◽  
L.J. Chen
Keyword(s):  
Epitaxial Growth ◽  
Size Effects ◽  
Formation Temperature ◽  
Si Substrate ◽  
Preliminary Results ◽  
Single Orientation

ABSTRACTEpitaxial NiSi2 of single orientation was grown on laterally confined (111)Si. Striking oxide opening size effects on the growth of NiSi2 epitaxy were observed. The formation temperature of NiSi2 on (111)Si was found to be as low as 550°C inside oxide openings 1.8 μm or smaller in size. Epitaxial NiSi2 of single orientation which is identical to that of (111)Si substrate was formed inside oxide openings of or smaller than 1.8, 1, and 0.8 μm in size in samples annealed at 550-750, 800, and 850-900°C, respectively. Preliminary results on the epitaxial growth of CoSi2 are also reported.

Selective Epitaxial Growth of 4H-SiC with SiO2 Mask by Low-Temperature Halo-Carbon Homoepitaxial Method

2007 ◽  
Vol 556-557 ◽  
pp. 149-152 ◽  
Author(s):  
Bharat Krishnan ◽  
Hrishikesh Das ◽  
Huang De Lin ◽  
Yaroslav Koshka
Keyword(s):  
Growth Rate ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Surface Defects ◽  
Growth Conditions ◽  
Lower Growth ◽  
New Device ◽  
Selective Epitaxial Growth ◽  
Device Applications ◽  
Lower Temperature

Previously reported CVD epitaxial growth of 4H-SiC at temperatures down to and below 13000C using CH3Cl precursor offered a promise of new device applications that could benefit from lower-temperature growth process. In this work, selective epitaxial growth (SEG) of 4H-SiC mesas using conventional SiO2 low temperature mask is reported. Virtually no nucleation on the mask could be observed after SEG at 13000C. The mask could be easily removed after the growth, with no degradation of the surface of SiC substrate under the mask. For the growth conditions that normally resulted in growth rate of 2 /m/hr and defect-free epilayer morphology during regular full-wafer (non-SEG) epitaxy, the epilayer morphology during SEG was significantly degraded by the appearance of oriented triangular defects, while the growth rate increased more than three times in comparison to the blanket epitaxial growth due to the loading effect. The growth at optimized growth conditions and lower growth rate resulted in significant reduction of the surface defects, making this approach promising for obtaining device-quality mesas. The crystal quality of the mesas, defects at the mesa walls, formation of facets during SEG, and other effects are reported.

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