Deep-submicron structures in YBCO: fabrication and measurements

AbstractPolysilicon is a key material widely used in MOSFET, bipolar, and BICMOS devices. As these technologies evolve into the deep submicron regime, several issues emerge in the applications of polysilicon that must be addressed. In sub-0.5µm MOSFET, fabrication and reliability of n + poly for NMOS and p + poly for PMOS should be studied. In bipolar technology, scaling limits of polysilicon emitter must be investigated. Understanding polysilicon, both in terms of its basic material and process characteristics and its characteristics in specific integrated process and/or integrated device structures, is definitely required in order to realize the full potential of ULSI technologies.

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Langevin Forces and Generalized Transfer Fields for Noise Modelling in Deep Submicron Devices

VLSI Design ◽

10.1155/2001/82542 ◽

2001 ◽

Vol 13 (1-4) ◽

pp. 85-90

Author(s):

P. Shiktorov ◽

E. Starikov ◽

V. Gruzinskis ◽

T. GonzáLez ◽

J. Mateos ◽

...

Keyword(s):

Single Scattering ◽

Field Method ◽

Deep Submicron ◽

Energy Change ◽

Voltage Noise ◽

Noise Sources ◽

Submicron Devices ◽

Hydrodynamic Calculations ◽

Submicron Structures ◽

Noise Spectra

We present a generalized transfer field method with the microscopic noise sources directly connected with the velocity and energy change during single scattering events. The advantages of this method are illustrated by hydrodynamic calculations of current and voltage noise spectra in several two-terminal submicron structures.

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dC/dV and CV Characterization of Gate Resistance Defects in eDRAM Circuits

ISTFA 2013: Conference Proceedings from the 39th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2013p0255 ◽

2013 ◽

Author(s):

Sweta Pendyala ◽

Dave Albert ◽

Katherine Hawkins ◽

Michael Tenney

Keyword(s):

Deep Submicron ◽

Work Flow ◽

Localization Technique ◽

Characterization Techniques ◽

Capacitance Voltage ◽

Gate Resistance

Abstract Resistive gate defects are unusual and difficult to detect with conventional techniques [1] especially on advanced devices manufactured with deep submicron SOI technologies. An advanced localization technique such as Scanning Capacitance Imaging is essential for localizing these defects, which can be followed by DC probing, dC/dV, CV (Capacitance-Voltage) measurements to completely characterize the defect. This paper presents a case study demonstrating this work flow of characterization techniques.

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Combine Micro-Probing and OBIRCH to Catch Non-Recognizable Fault in RF and Mixed-Mode Integrated Circuits

ISTFA 2007: Conference Proceedings from the 33rd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2007p0327 ◽

2007 ◽

Author(s):

Cha-Ming Shen ◽

Yen-Long Chang ◽

Lian-Fon Wen ◽

Tan-Chen Chuang ◽

Shi-Chen Lin ◽

...

Keyword(s):

Integrated Circuits ◽

Radio Frequency ◽

Failure Analysis ◽

Case Studies ◽

Mixed Mode ◽

Failure Mechanisms ◽

Deep Submicron ◽

Digital Logic ◽

Successful Approach ◽

Cmos Processes

Abstract Highly-integrated radio frequency and mixed-mode devices that are manufactured in deep-submicron or more advanced CMOS processes are becoming more complex to analyze. The increased complexity presents us with many eccentric failure mechanisms that are uniquely different from traditional failure mechanisms found during failure analysis on digital logic applications. This paper presents a novel methodology to overcome the difficulties and discusses two case studies which demonstrate the application of the methodology. Through the case studies, the methodology was proven to be a successful approach. It is also proved how this methodology would work for such non-recognizable failures.

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Thermal Frequency Imaging: A New Application of Laser Voltage Imaging Applied on 40nm Technology

ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2011p0018 ◽

2011 ◽

Author(s):

Guillaume Celi ◽

Sylvain Dudit ◽

Thierry Parrassin ◽

Philippe Perdu ◽

Antoine Reverdy ◽

...

Keyword(s):

Charge Carrier ◽

Laser Beam ◽

Integrated Circuit ◽

Carrier Density ◽

Deep Submicron ◽

Charge Carrier Density ◽

Voltage Imaging ◽

A New Technique ◽

Scan Chain

Abstract For Very Deep submicron Technologies, techniques based on the analysis of reflected laser beam properties are widely used. The Laser Voltage Imaging (LVI) technique, introduced in 2009, allows mapping frequencies through the backside of integrated circuit. In this paper, we propose a new technique based on the LVI technique to debug a scan chain related issue. We describe the method to use LVI, usually dedicated to frequency mapping of digital active parts, in a way that enables localization of resistive leakage. Origin of this signal is investigated on a 40nm case study. This signal can be properly understood when two different effects, charge carrier density variations (LVI) and thermo reflectance effect (Thermal Frequency Imaging, TFI), are taken into account.

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Electrical Probing and Surface Imaging of Deep Sub-Micron Integrated Circuits

ISTFA 1999: Conference Proceedings from the 25th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa1999p0039 ◽

1999 ◽

Author(s):

Kenneth Krieg ◽

Richard Qi ◽

Douglas Thomson ◽

Greg Bridges

Keyword(s):

High Resolution ◽

Integrated Circuits ◽

Real Time ◽

High Speed ◽

Time Signal ◽

Surface Imaging ◽

Atomic Force ◽

Submicron Structures ◽

High Resolution Images ◽

Capacitive Loading

Abstract A contact probing system for surface imaging and real-time signal measurement of deep sub-micron integrated circuits is discussed. The probe fits on a standard probe-station and utilizes a conductive atomic force microscope tip to rapidly measure the surface topography and acquire real-time highfrequency signals from features as small as 0.18 micron. The micromachined probe structure minimizes parasitic coupling and the probe achieves a bandwidth greater than 3 GHz, with a capacitive loading of less than 120 fF. High-resolution images of submicron structures and waveforms acquired from high-speed devices are presented.

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