Leakage Reduction of Power-Gating Sequential Circuits Based on Complementary Pass-Transistor Adiabatic Logic Circuits

2010 ◽  
Author(s):  
Weiqiang Zhang ◽  
Yu Zhang ◽  
Shi Xuhua ◽  
Jianping Hu
Keyword(s):  
Logic Circuits ◽  
Sequential Circuits ◽  
Power Gating ◽  
Leakage Reduction ◽  
Adiabatic Logic ◽  
Pass Transistor

Near-Threshold Flip-Flops Using Clocked Adiabatic Logic in Nanometer CMOS Processes

2011 ◽  
Vol 460-461 ◽  
pp. 837-842 ◽  
Author(s):  
Hai Yan Ni ◽  
Jian Ping Hu
Keyword(s):  
Single Phase ◽  
Energy Savings ◽  
Logic Circuits ◽  
Sequential Circuits ◽  
Clock Generator ◽  
Nanometer Cmos ◽  
Wide Range ◽  
Adiabatic Logic ◽  
Auxiliary Signal ◽  
Near Threshold

This paper presents adiabatic flip-flops operating on near-threshold supply voltages. The near-threshold adiabatic flip-flops and sequential circuits are realized with improved CAL (Clocked Adiabatic Logic) circuits using a single-phase power clock. An auxiliary clock generator is used to obtain the non-overlap sinusoidal auxiliary signal pair. A near-threshold mode-10 counter is implemented. All circuits are simulated using Predictive Technology Model (PTM) 45nm process. The near-threshold adiabatic circuits attain large energy savings over a wide range of frequencies, as compared with conventional static CMOS logic circuits.

Leakage Reduction of P-Type Logic Circuits Using Pass-Transistor Adiabatic Logic with PMOS Pull-up Configuration

2010 ◽  
Vol 39 ◽  
pp. 73-78 ◽  
Author(s):  
Jin Tao Jiang ◽  
Li Fang Ye ◽  
Jian Ping Hu
Keyword(s):  
Gate Oxide ◽  
Cmos Process ◽  
Oxide Materials ◽  
Gate Leakage ◽  
Leakage Reduction ◽  
Nanometer Cmos ◽  
Benchmark Circuit ◽  
Adiabatic Logic ◽  
Pass Transistor ◽  
Cmos Processes

Leakage power reduction is extremely important in the design of nano-circuits. Gate leakage has become a significant component in currently used nanometer CMOS processes with gate oxide structure. The structure and operation of the PAL-2P (pass-transistor adiabatic logic with PMOS pull-up configuration) circuits that consist mostly of PMOS transistors are complementary to PAL-2N (pass-transistor adiabatic logic with NMOS pull-down configuration) ones that consist mostly of NMOS transistors. This paper investigates gate leakage reduction of the PAL-2P circuits in nanometer CMOS processes with gate oxide materials. An s27 benchmark circuit from the ISCAS89 sequential benchmark set is verified using the PAL-2P scheme. All circuits are simulated with HSPICE using the 65nm CMOS process with gate oxide materials. Based on the power dissipation models of PAL-2P adiabatic circuits, active leakage dissipations are estimated by testing total leakage dissipations using SPICE simulations. The PAL-2P circuits consume low static power compared with traditional PAL-2N ones.

Complementary Pass-Transistor Adiabatic Logic Using Dual Threshold CMOS Techniques

2010 ◽  
Vol 39 ◽  
pp. 55-60 ◽  
Author(s):  
Bin Bin Lu ◽  
Jian Ping Hu
Keyword(s):  
Energy Dissipation ◽  
Full Adder ◽  
Logic Circuits ◽  
Cmos Circuits ◽  
Technology Scaling ◽  
Nanometer Cmos ◽  
Adiabatic Logic ◽  
Pass Transistor ◽  
Simulation Results ◽  
Scaling Down

With rapid technology scaling down, the energy dissipation of nanometer CMOS circuits is becoming a major concern, because of the increasing sub-threshold leakage in nanometer CMOS processes. This paper introduces a dual threshold CMOS (DTCMOS) technique for CPAL (complementary pass-transistor adiabatic logic) circuits to reduce sub-threshold leakage dissipations. The method to size the transistors of the dual-threshold CPAL gates is also discussed. A full adder using dual-threshold CPAL circuits is realized using 45nm BSIM4 CMOS model. HSPICE simulation results show that leakage dissipations of the CPAL full adder with DTCMOS techniques are reduced compared with the basic CPAL one.

P-Type Adiabatic Sequential Circuits for Leakage Reduction of Nanometer Circuits

2010 ◽  
Vol 159 ◽  
pp. 155-161
Author(s):  
Jin Tao Jiang ◽  
Yu Zhang ◽  
Jian Ping Hu
Keyword(s):  
Power Consumption ◽  
Leakage Power ◽  
Sequential Circuits ◽  
Technology Scaling ◽  
Nanometer Cmos ◽  
Gate Structure ◽  
Adiabatic Logic ◽  
Pass Transistor ◽  
P Type ◽  
Cmos Processes

With rapid technology scaling, the proportion of the leakage power catches up with dynamic power gradually. The leakage dissipation through the gate oxide is becoming an important component of power consumption in currently used nanometer CMOS processes without metal gate structure. This paper presents adiabatic sequential circuits using P-type complementary pass-transistor adiabatic logic circuit (P-CPAL) to reduce the gate-leakage power dissipations. A practical sequential system with a mode-10 counter is demonstrated using the P-CPAL scheme. All circuits are simulated using HSPICE under 65nm and 90nm CMOS processes. Simulations show that the mode-10 counter using P-CPAL circuits obtains significant improvement in terms of power consumption over the traditional N-type CPAL counterparts.

Power Dissipation Analysis of Adiabatic Circuits and Active Leakage Power Estimation in Nanometer CMOS Processes

2010 ◽  
Vol 121-122 ◽  
pp. 97-102 ◽  
Author(s):  
Wei Qiang Zhang ◽  
Li Su ◽  
Li Fang Ye ◽  
Jian Ping Hu
Keyword(s):  
Power Dissipation ◽  
Low Power Design ◽  
Logic Circuits ◽  
Leakage Power ◽  
Nanometer Cmos ◽  
Wide Range ◽  
Adiabatic Logic ◽  
Total Leakage ◽  
Pass Transistor ◽  
Simulation Results

The leakage dissipations of nano-circuits have become a critical concern. Estimating the leakage power of nano-circuits is very important in low-power design. This paper presents a new estimation technology for the active leakage dissipations of adiabatic logic circuits. Based on the power dissipation models of adiabatic circuits, active leakage dissipations are estimated by testing total leakage dissipations with additional capacitances on load nodes of the adiabatic circuits using HSPICE simulations. Taken as an example, the estimation for dynamic and active leakage power dissipations of CPAL (Complementary Pass-transistor Adiabatic Logic) circuits is demonstrated using the proposed estimation technology. The simulation results show that the proposed estimation technology can accurately estimate the active leakage dissipations of CPAL circuits with an accepted error over a wide range of frequencies.

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