High Temperature Resistant Packaging Technology for SiC Power Module by Using Ni Micro-Plating Bonding

2019 ◽  
Author(s):  
Kohei Tatsumi ◽  
Isamu Morisako ◽  
Keiko Wada ◽  
Minoru Fukuomori ◽  
Tomonori Iizuka ◽  
...  
Keyword(s):  
High Temperature ◽  
Power Module ◽  
Packaging Technology

First Demonstration of High Temperature SiC CMOS Gate Driver in Bridge Leg for Hybrid Power Module Application

2018 ◽  
Vol 924 ◽  
pp. 854-857
Author(s):  
Ming Hung Weng ◽  
Muhammad I. Idris ◽  
S. Wright ◽  
David T. Clark ◽  
R.A.R. Young ◽  
...  
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Initial Increase ◽  
Reliability Test ◽  
Power Devices ◽  
Power Module ◽  
Hybrid Power ◽  
Gate Driver ◽  
Passive Circuit

A high-temperature silicon carbide power module using CMOS gate drive technology and discrete power devices is presented. The power module was aged at 200V and 300 °C for 3,000 hours in a long-term reliability test. After the initial increase, the variation in the rise time of the module is 27% (49.63ns@1,000h compared to 63.1ns@3,000h), whilst the fall time increases by 54.3% (62.92ns@1,000h compared to 97.1ns@3,000h). The unique assembly enables the integrated circuits of CMOS logic with passive circuit elements capable of operation at temperatures of 300°C and beyond.

Thermal Resistance Evaluation of a Low-Inductance Double-Stacked SiN-AMC Substrate for a High-Temperature Operation SiC Power Module

2018 ◽  
Vol 86 (12) ◽  
pp. 107-112
Author(s):  
Fumiki Kato ◽  
Shinji Sato ◽  
Hidekazu Tanisawa ◽  
Kenichi Koui ◽  
Kinuyo Watanabe ◽  
...  
Keyword(s):  
High Temperature ◽  
Thermal Resistance ◽  
Power Module ◽  
Resistance Evaluation ◽  
High Temperature Operation

A High Temperature, Fast Switching SiC Multi-chip Power Module (MCPM) for High Frequency (> 500 kHz) Power Conversion Applications

2013 ◽  
Vol 2013 (HITEN) ◽  
pp. 000056-000060 ◽  
Author(s):  
Z. Cole ◽  
B. S. Passmore ◽  
B. Whitaker ◽  
A. Barkley ◽  
T. McNutt ◽  
...  
Keyword(s):  
High Temperature ◽  
High Frequency ◽  
Power Conversion ◽  
Three Dimensional ◽  
Boost Converter ◽  
Switching Frequency ◽  
Power Module ◽  
Element Analysis ◽  
Switching Characteristics ◽  
Three Dimensional Finite Element

In high frequency power conversion applications, the dominant mechanism attributed to power loss is the turn-on and -off transition times. To this end, a full-bridge silicon carbide (SiC) multi-chip power module (MCPM) was designed to minimize parasitics in order to reduce over-voltage/current spikes as well as resistance in the power path. The MCPM was designed and packaged using high temperature (> 200 °C) materials and processes. Using these advanced packaging materials and devices, the SiC MCPM was designed to exhibit low thermal resistance which was modeled using three-dimensional finite-element analysis and experimentally verified to be 0.18 °C/W. A good agreement between the model and experiment was achieved. MCPMs were assembled and the gate leakage, drain leakage, on-state characteristics, and on-resistance were measured over temperature. To verify low parasitic design, the SiC MCPM was inserted into a boost converter configuration and the switching characteristics were investigated. Extremely low rise and fall times of 16.1 and 7.5 ns were observed, respectively. The boost converter demonstrated an efficiency of > 98.6% at 4.8 kW operating at a switching frequency of 250 kHz. In addition, a peak efficiency of 96.5% was achieved for a switching frequency of 1.2 MHz and output power of 3 kW.

The Development and Qualification of a DC-DC Converter for 225°C (437°F) Operating Temperature

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000214-000221
Author(s):  
Bob Hunt
Keyword(s):  
High Temperature ◽  
Operating Temperature ◽  
Reliable Operation ◽  
Packaging Technology ◽  
High Temperature Electronic

This paper presents the development and qualification of high temperature electronic module packaging technology to service the requirements for extended and reliable operation at 225°C (437°F) for applications in the Oil & Gas, Automotive and Aerospace markets. It also covers the application of this technology to the first in a range of DC-DC converter modules and is based on Cissoid's ‘ETNA’ semiconductor components.

A High Current (>1500A) Power Module for High Temperature, High Performance Applications Using SiC TMOS Power Switches

2012 ◽  
Vol 2012 (HITEC) ◽  
pp. 000402-000406
Author(s):  
B. Passmore ◽  
J. Hornberger ◽  
B. McPherson ◽  
J. Bourne ◽  
R. Shaw ◽  
...  
Keyword(s):  
High Temperature ◽  
High Performance ◽  
Extreme Environment ◽  
Wide Bandgap ◽  
Power Module ◽  
Power Modules ◽  
Power Switches ◽  
Bandgap Semiconductors ◽  
Transition Times ◽  
Switch Position

A high temperature, high performance power module was developed for extreme environment systems and applications to exploit the advantages of wide bandgap semiconductors. These power modules are rated > 1200V, > 100A, > 250 °C, and are designed to house any SiC or GaN device. Characterization data of this power module housing trench MOSFETs is presented which demonstrates an on-state current of 1500 A for a full-bridge switch position. In addition, switching waveforms are presented that exhibit fast transition times.

Characterization of Silicone Gel for High Temperature Encapsulation in High Voltage WBG Power Modules

2017 ◽  
Vol 2017 (1) ◽  
pp. 000312-000317
Author(s):  
Adam Morgan ◽  
Xin Zhao ◽  
Jason Rouse ◽  
Douglas Hopkins
Keyword(s):  
High Temperature ◽  
Thermal Aging ◽  
Dielectric Strength ◽  
Material Structure ◽  
Power Module ◽  
Leakage Currents ◽  
Test Vehicle ◽  
Silicone Gel ◽  
Power Modules ◽  
Silicone Gels

Abstract One of the most important advantages of wide-bandgap (WBG) devices is high operating temperature (>200°C). Power modules have been recognized as an enabling technology for many industries, such as automotive, deep-well drilling, and on-engine aircraft controls. These applications are all required to operate under some form of extreme environmental conditions. Silicone gels are the most popular solution for the encapsulation of power modules due to mechanical stress relief enabled by a low Young's modulus, electrical isolation achieved due to high dielectric strength, and a dense material structure that protects encapsulated devices against moisture, chemicals, contaminants, etc. Currently, investigations are focused on development of silicone gels with long-term high-temperature operational capability. The target is to elevate the temperature beyond 200°C to bolster adoption of power modules in the aforementioned applications. WACKER has developed silicone gels with ultra-high purity levels of < 2ppm of total residual ions combined with > 200°C thermal stability. In this work, leakage currents through a group of WACKER Chemie encapsulant silicone gels (A, B, C) are measured and compared for an array of test modules after exposure to a 12kV voltage sweep at room temperature up to 275°C, and thermal aging at 150°C for up to more than 700 hours. High temperature encapsulants capable of producing leakage currents less than 1μA, are deemed acceptable at the given applied blocking voltage and thermal aging soak temperature. To fully characterize the high temperature encapsulants, silicone gel A, B, and C, an entire high temperature module is used as a common test vehicle. The power module test vehicle includes: 12mil/40mil/12mil Direct Bonded Copper (DBC) substrates, gel under test (GUT), power and Kelvin connected measurement terminals, thermistor thermal sensor to sense real-time temperature, and 12mil Al bonding wires to manage localized high E-Fields around wires. It was ultimately observed that silicone gels B and C were capable of maintaining low leakage current capabilities under 12kV and 275°C conditions, and thus present themselves as strong candidates for high-temperature WBG device power modules and packaging.

Sandwich Structured Power Module for High Temperature SiC Power Semiconductor Devices

2014 ◽  
Vol 2014 (1) ◽  
pp. 000757-000762 ◽  
Author(s):  
Takeshi ANZAI ◽  
Yoshinori MURAKAMI ◽  
Shinji SATO ◽  
Hidekazu TANISAWA ◽  
Kohei HIYAMA ◽  
...  
Keyword(s):  
Thermal Expansion ◽  
High Temperature ◽  
Semiconductor Devices ◽  
Ceramic Substrate ◽  
Power Module ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
High Temperature Operation

A high temperature sandwich structured power module for high temperature SiC power semiconductor devices has been accomplished. Problems were found in the high temperature building-up process of the module caused by excess warpage of the ceramic substrate. Also the high temperature operation of the power module brings an excess warpage of the structure caused by parts having different coefficients of thermal expansion (CTEs) from each other. In this paper, some countermeasures to overcome the problems are demonstrated.

Precise Chip Joint Method with Sub-micron Au Particle for High-density SiC Power Module Operating at High Temperature

2013 ◽  
Vol 2013 (HITEN) ◽  
pp. 000254-000259 ◽  
Author(s):  
Fumiki Kato ◽  
Fengqun Lang ◽  
Simanjorang Rejeki ◽  
Hiroshi Nakagawa ◽  
Hiroshi Yamaguchi ◽  
...  
Keyword(s):  
Shear Strength ◽  
High Temperature ◽  
Flip Chip ◽  
Stress Test ◽  
High Density ◽  
Cathode Side ◽  
Module Structure ◽  
Power Devices ◽  
Power Module ◽  
Joint Method

In this work, a novel precise chip joint method using sub-micron Au particle for high-density silicon carbide (SiC) power module operating at high temperature is proposed. A module structure of SiC power devices are sandwiched between two silicon nitride-active metal brazed copper (SiN-AMC) circuit boards. To make a precise position and height control of the chip bonding, the top side (gate/source or anode pad side) of SiC power devices are flip-chip bonded to circuit electrodes using sub-micron Au particle with low temperature (250°C) and pressure-less sintering. The accuracy of the bonding position of chips was less than 10 μm and the accuracy of the height after bonding chips was less than 15 μm. Mechanical shear fatigue tests for flip-chip bonded SiC Schottky barrier diode (SBD) were carried out. As a result, initial shear strength of the joint was 36 MPa. The shear strength of 43 MPa is obtained after storage life test (500 hours at 250°C), and also 35 MPa is obtained even after thermal cycle stress test (1000 cycles between −40°C and 250°C). The flip-chip bonding of SiC-JFET is successfully realizedon the substrate without short or open failure electrically. Finally we joint the backside of the SiC-JFET (drain side) and the SiC-SBD (cathode side) to each circuit electrodes at once by means of reflow process with Au-12%Ge solder. The structured sandwich SiC power module was also successfully formed.

Sign in / Sign up

Export Citation Format

Share Document